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GATE - 2009
Answer Keys

1 D 2 A 3 4 A 5 A 6 A 7 B

8 D 9 D 10 D 11 D 12 C 13 D 14 C

15 C 16 B 17 B 18 A 19 C 20 A 21 C

22 23 C 24 B 25 26 27 C 28 D

29 30 31 D 32 33 B 34 A 35 B

36 A 37 B 38 A 39 D 40 C 41 C 42 B

43 B 44 A 45 46 C 47 48 49

50 51 D 52 B 53 A 54 C 55 A 56

57 D 58 D 59 C 60 A

1. (D)

e(
j x + jy )
= e− y + jx = e−y e jx = e−y  cos x + j sin x  = e−y

4. (A)
x y z
, , ⇒ ( x, y, z )
x +y +z
2 2 2
x +y +z
2 2 2
x + y2 + z2
2

Given r=1, ∴
6. (A) R

R
2
−
Vi Vo
+
C 1

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 sCR 
V+ =   Vi
1 + sCR 
V− = V+

sCRVi sCR
Vi − Vi − Vo Vo
1 + sCR = 1 + sCR ⇒ =
sCR-1
R R Vi sCR+1

gain = 1, Hence it is APF

7. (B)
It is an AND gate

8. (D)
PQ R 'P ' Q

RS 00 01 11 10
00 0 1 0 0

01 0 1 1 1
R ' SP
P 'RS
11 1 1 1 0

10 0 0 1 0

RPQ
9. (C)
JK Q(t + 1)
00 Q(t)
01 0
10 1
11 Q(t)

10. (C)
(1.375)10 = (1.011)2
0.375 × 2 = 0.75
0.75 × 2 = 1.5

0.5 × 2 = 1
12. (C)

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2π
For 2sin ( 2π ) , T1 = = 1s
2π
2π 2
3 sin ( 3πt ) , T2 = = s
3π 3
 2
LCM  1,  = 2 sec
 3
13. (D)
x(t)=sin t
ω =1
1 1
∠ − tan−1 ω = ∠ ( −π / 4 )
1+ ω 2 2

∴ output =
1
2
sin ( t- ( π/4) )
14. (C)
(Triangular Wave)

int egrator PM Phase

De modulator

16. (B)
+
R1 C1

Vi +

R2 C2 Vo

− −

Vi R1
K= ; C2 = C1 K − 1 ; R 2 =
Vo K −1

K = 10

R 2 = 1MΩ

45pF
C2 = 45pF; C1 = = 5pF
9
17. (B)

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Ifs = 1mA; R m = 100Ω

V = 10V

V = Im (R m + R s )

V 10
Rs = − Rm = − 100 = 10, 000 − 100 = 9.9kΩ
Ifs 1mA
21. (C)
 −3 0 
 
 0 −1
Hence eigen values are -3,-1
24. (B)
x3 = j = e jπ / 2

3 1
x = e jπ / 6 = cos 30 + j sin 30 = +j
2 2
28. (D)
RL = 2Ω, max power transfer thereon

pmax = 6.125W

31. (D)
For thermistor,
 1 1 
B  − 
T T 
R T1 = R T2 e  1 2

For P: β=3000k, At T2 = 298K, R T2 = 2kΩ

For Q, β=3000k, AT T2 = 298k, R T2 = 2kΩ

At T1 = 373k,
 1 1 
4000  − 
R T1 P = (2k ) e  373 298  ........... (1)

 1 1 
3000  − 
R T1 q = (2k ) e  373 298  ........... (2)

Eqn. 1
= 0.509
Eqn. 2
33. (B)
By KCL at V- ,

Vi 0 − Vo 0 − 3.2 − Vo 
= + ⇒ Vo = −6.6V
1k 10k 10k
34. (A)

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Vi
Input resistance =
I 2R
V − 0 Vi − Vo
I= i + KCL at node 1.
R 2R R 3R
I 2
Vi − 0 0 − Vo −Vo
= = KCL at node 2. vi 1
R 3R 3R
−
Vo = −3Vi
+ vo
V V + 3Vi 2Vi Vi 3Vi
I= i + i = + =
R 2R R R R
Vi
= R /3
I
35. (B)
It is a limited circuit
It makes a transition from +5V to -5V.

( )
∃O 1 − e−t / RC = 5 ×
4.7
9.4
= Voltage across bottom 4.7kΩ

=V+

R = 10kΩ; C=1µF; t=8.7m sec

38. (A)
XRAA
A = 00H
40. (C)
3 + 2 sin t cos2t=3+ sin ( t+2t ) + sin ( t − 2t ) 

= 3 + sin 3t − sin t
It is of a+bsinθ + c sin3θ
2 2 2 2
 b   c   1   1 
RMS value= a2 +   +  = 9+  +  = 10
 2  2  2  2
44. (A)
1 z(s) 1 R(s)
X(s)
k
−k −1 / s

Y(s) 1
1 w(s) C(s)

Z(s) = kC(s)+X(s) W(s)=C(s)-kR(s)

y (s) = W(s)
−1
C(s) = R(s)
s
R(s)=Z(s)

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∴ y(s) = c(s) − kz(s)

−1
= C(s) − kZ(s)
s
 1 + ks 
= −  Z(s) = X ( s)
 s 

 1
Z(s) = k  −  Z ( s ) + X ( s )
 s
 k
 1 +  Z ( s ) = X ( s)
 s

Y (s) − (1 + ks )
∴ =
X (s) k+s

46. (B)
Characteristic equation is
sI − F = 0

 s 0  0 1  s −1
 −  = = s(s + 2) + 4 = 0
 0 s   − 4 − 2  4 s +2

= s2 + 2s + 4 = 0; ε=0.5

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