5.1.

7 The p-Channel MOSFET

- The p-Channel MOSFET is

fabricated on an n-type substrate with
p+ regions for the drain and source.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 ! In an n-channel MOSFET, the channel is
made of n-type semiconductor, so the
charges free to move along the channel are
negatively charged (electrons).
! In a p-channel device the free charges which
move from end-to-end are positively charged
(holes).
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.1.7 The p-Channel MOSFET
- The p-Channel MOSFET is fabricated on an n-type substrate
with p+ regions for the drain and source.

- vGS, vDS, and Vt are negative. The current flows from the source to the drain.

- PMOS technology originally dominated MOS manufacturing.

- NMOS has virtually replaced because it is smaller, faster, and needs lower
supply voltage.

- But you have to be familiar with PMOS because:

there are many discrete PMOSFETs and
there are complementary MOS, CMOS!!

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.1.8 Complementary MOS or CMOS

body terminal
for the p-
channel
p-type body device

Figure 5.10 Cross-section of a CMOS integrated circuit. Note that the

PMOS transistor is formed in a separate n-type region, known as an n
well. Another arrangement is also possible in which an n-type body is
used and the n device is formed in a p well. Not shown are the
connections made to the p-type body and to the n well; the latter
functions as the body terminal for the p-channel device.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.2.5 Characteristics of the p-channel MOSFET

Figure 5.19 (a) Circuit symbol for the p-channel

enhancement-type MOSFET. (b) Modified symbol with an
arrowhead on the source lead. (c) Simplified circuit symbol
for the case where the source is connected to the body.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Table 5.2
Regions of Operation of the Enhancement PMOS Transistor

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
MOSFET canale p ad arricchimento

tensione di soglia Vt < 0

k = (1/2) p Cox (W/L)

Transistor ON se VGS < Vt (ovvero VSG > | Vt |)

vDS < 0 (ovvero vSD > 0 ) iD > 0 (uscente dal drain)

In regione di triodo vDS vGS Vt

iD = k [2(vGS Vt) vDS -vDS2]

In regione di saturazione vDS vGS Vt

iD = k (vGS Vt)2 (1+vDS)

Per il punto di lavoro, spesso si approssima:

ID = k (VGS Vt) 2
= 1/VA , VA<0

Per piccolo segnale: ro=VA/ ID gm = 2 k |(vGS Vt)|

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Figure 5.20 The relative levels of the terminal voltages of
the enhancement-type PMOS transistor for operation in
the triode region and in the saturation region.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 ATTENZIONE: Il circuito equivalente per piccolo
segnale lo stesso per n-Mos e p-MOS
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Figure E5.7

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Figure 5.25 Circuit for Example 5.7 p.388
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Example 5.7 p.388
5.25

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Example 5.7 p.388

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Figure E5.14 Circuit for Exercise D5.14 p. 389

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.9.1 The Role of the Substrate-The Body Effect
- Usually, the source terminal is connected to the substrate (or body) terminal.
- In integrated circuit, many MOS transistors are fabricated on a single substrate.

- In order to maintain the cutoff condition for all the substrate-to-channel junctions,
the substrate is usually connected to the most negative power supply in an NMOS
circuit (the positive in a PMOS circuit).
- The reverse bias will widen the depletion region.

- The channel depth is reduced.

- To return the channel to its former status, vGS

has to be increased.

The body effect can cause considerable

degradation in circuit performance
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.9.2 MODELING the Body Effect gmb
For small signal

Figure 5.62 Small-signal, equivalent-circuit model of a

MOSFET in which the source is not connected to the body.
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Per stabilire se un circuito soffre delleffetto di substrato:

Si considera prima il circuito in DC e si valuta se il

Source di un NMOS connesso alla tensione continua
pi bassa del circuito. Se cos, allora il transistor
NMOS considerato non soffre delleffetto di substrato in
DC poich VSB=0.
Si valuta inoltre se il Source di un PMOS connesso alla
tensione continua pi alta del circuito. Se cos, allora il
transistor PMOS considerato non soffre delleffetto di
substrato in DC poich VSB=0.

Si considera il circuito in AC e si valuta se i terminali di

Source dei MOSFET sono a massa per il segnale. Se si,
il MOSFET considerato non soffre delleffetto di substrato
in AC poich vbs=0.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.8.2 The Common-Source (CS) amplifier

Soffre delleffetto di substrato in DC

Non soffre delleffetto di substrato in AC

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.8.3 The Common-Source Amplifier with a Source Resistance

Soffre delleffetto di substrato in DC

Soffre delleffetto di substrato in AC

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Body Effect in the Common-Source Amplifier with a
Source Resistance (1)

i= gmvgs + g v =(gm + g )vgs

mb bs mb
g = gm = gm(1+ )vgs
mb
gm R gm CS = R +r

Rout S o1+ g (1+ )R

vs = S vg io = v

m S

g

1+ g m (1+ )R 1+ g m (1+ )R
S S
gm + g = gm 1+
mb
v o -i o RL g m RL

= =
vg vg 1+ g m (1+ )R (ro=, RD=. Sarebbe in // a RL)
S

 Body effect in the Common-Source Amplifier with a
Source Resistance (2) (schema con RD, Rsig)
Per tenere conto delleffetto di substrato (body):
1) Al denominatore del guadagno metto gm + gmb al posto di gm
2) Nella resistenza di uscita metto gm + gmb al posto di gm
gm + g = gm 1+
mb

AV =
vo

Rin (
g m ro RD RL
)
v sig Rsig + Rin
ro
1+ g m (1+ ) RS
r
o + ( R D R )
L

Rout = RD R R = ro + RS [1+ g m (1 + ) ro ]
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.8.4 The Common-Gate (CG) Amplifier

Soffre delleffetto di substrato in DC

Soffre delleffetto di substrato in AC

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Common-Gate Amplifier with Body Effect (1) v0

G
B RD RL

Rsig
Rin
vsig

The body terminal is not connected to the source terminal, but rather is connected
to the lowest voltage in the circuit (ground). Because the gate and body are both
grounded, then Vgs=Vbs
Per tenere conto delleffetto di substrato
(body), nel guadagno, nella resistenza
di ingresso e nella resistenza di uscita
metto gm + gmb al posto di gm
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Common-Gate Amplifier with Body Effect (2)

vo
=+gm(1+ )R
vs L (ro=; RD=, sarebbe in // a RL)
CG = 1
Rin
g m (1+ )

RCG = r 1+ g (1+ )(R R )
out o m I S

5.8.5 The Common-Drain (CD) Amplifier or Source Follower

Soffre delleffetto di substrato in DC

Soffre delleffetto di substrato in AC

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Common-Drain Amplifier with Body Effect

gm
io = vg
1+ g m (1+ )R
L 1
CD
Rout =
v o +i o RL L
gm R g m (1+ )
= =
(ro=)

vg vg 1+ g m (1+ )R
L
Per tenere conto delleffetto di substrato

(body):
1) Al denominatore del guadagno metto gm + gmb al posto di gm
2) Nella resistenza di uscita metto gm + gmb al posto di gm
 Results of Body Effect

Gain of source follower is degraded.

Input resistance of C-G and output resistance of C-D amplifier is
lowered.
Output resistance of both C-S and C-G amplifiers is raised.
Body effect increases input signal range.
 CHAPTER 6

Building Blocks of Integrated-Circuit Amplifiers

Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
6.2 The basic gain cells of IC amplifiers:
active-loaded common-source amplifier
The current source
as active load

Bias must ensure saturation for Q1

Intrinsic gain= max gain

ID VA VA
A0 = g m rO = =
VOV / 2 ID VOV / 2

Figure 6.1 The basic gain cells of IC amplifiers: (a) current-source- or active-
loaded common-source amplifier; (c) small-signal equivalent circuit of (a)
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 Good Example of Current Source

" As long as a MOS transistor is in saturation region and =0, the

current is independent of the drain voltage and it behaves as an
ideal current source seen from the drain terminal.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Bad Example of Current Source

" Since the variation of the source voltage directly affects the
current of a MOS transistor, it does not operate as a good
current source if seen from the source terminal

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Common-source amplifier with CMOS
active load
large-signal model

no body effect

small-signal
equivalent
circuit

Figure 6.3 (a) The CS amplifier with the current-source load implemented
with a p-channel MOSFET Q2 ; (b) the circuit with Q2 replaced with its large-
signal model; and (c) small-signal equivalent circuit of the amplifier.
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 CS Stage (nMOS) with Current Source Load (pMOS)

Av = g m1 ( rO1 || rO2 )
Rout = rO1 || rO 2

no body effect

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
From the Common-source amplifier with CMOS
to CMOS inverter/amplifier
VDD

G S
PMOS
D

VIN VOUT
D
NMOS
G
S

Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
EXAMPLE 5.8
Vt= 1 V, k(W/L) 1 mA/V2 for NMOS and PMOS
- Find iDN, iDP, O, for I =0 V, +2.5 V, and -2.5 V.

For I =0 V,

- QN and QP are perfectly matched

- Equal |VGS| (2.5 V)
-The circuit is symmetrical.
(upper and lower part)

- Thus |VDG| = 0 V.
- Thus in saturation region !

Figure 5.26 Circuits for Example 5.8.

Non scorre corrente in R

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Vt= 1 V, k(W/L) 1 mA/V2 for NMOS and PMOS

For I =+2.5 V - for QP, VGS = 0 V, cutoff !

O should be negative for IDN.

GD will be greater than Vt.

for QN, triode !

For I = -2.5 V

- Exact complement of +2.5 V

- QN will be off.

for Qp, triode !

Figure 5.26 Circuits for Example 5.8.

37
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Guadagno di piccolo segnale
Vt= 1 V, k(W/L) 1 mA/V2 for NMOS and PMOS
- Find small signal gain

For I small signal with 0 DC component

NO BODY EFFECT
Draw equivalent circuit

R resistenza di carico

gm2vgs2

vgs2= R

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 CMOS common-source amplifier
with current mirror as active load

current mirror
with pMOS

Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 current mirror current mirror
with nMOS With pMOS

Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
6.4 IC Biasing

current mirror
with nMOS

IP: Q2 operates in saturation

Figure 6.22 Circuit for a basic MOSFET constant-

current source. For proper operation, the output
terminal, that is, the drain of Q2, must be connected to
a circuit that ensures that Q2 operates in saturation.
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 Figure 6.23 Basic MOSFET current mirror (current sink).
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 Figure 6.24 Output characteristic of the current
source in Fig. 6.22 and the current mirror of Fig. 6.23
for the case of Q2 matched to Q1.
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 Example 6.5, p. 505: R?
Iref = 100A, VDD = 3 V, Vt = 0.7 V, kn(W/L) = 2 mA/V2

Figure 6.22
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 Example 6.5, p. 505: R?
Iref = 100A, VDD = 3 V, Vt = 0.7 V, kn(W/L) = (200 A/V2)(10)

Figure 6.22
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
Figure 6.25 A current-steering circuit.
 Figure 6.26 Application of the constant currents I2 and
I5 generated in the current-steering circuit of Fig. 6.25.
Constant-current I2 is the bias current for the source
follower Q6, and constant-current I5 is the load current
for the common-source amplifier Q7.
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 A current source

Common drain or
source follower

common-source

A current sink

Figure 6.25 & Figure 6.26

Sedra/Smith Copyright 2011 by Oxford University Press, Inc.

Figure 6.27 (a) A current source; and (b) a current sink.
Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 Esercizio

Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 CMOS common-source amplifier
with current mirror as active load (1)
Load curve

active load

Figure 6.4 The CMOS common-source amplifier

Microelectronic Circuits, International Sixth Edition Sedra/Smith Copyright 2011 by Oxford University Press, Inc.
 CMOS common-source amplifier
with current mirror as active load (1)
Voltage transfer characteristic
VTC

active load

no body effect

Figure 6.4 The CMOS

common-source amplifier
(a) circuit; (d) transfer
characteristic.
 CMOS common-source amplifier
with current mirror as active load (2)

Pendenza p=Av
Se trascuro effetto
Early in Q p=-

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 CMOS common-source amplifier
with current mirror as active load (3)
Small-Signal Equivalent Circuit in Q point
Region III

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 CMOS common-gate amplifier
with current mirror as active load
(serve in combinazione con altri stadi)
small-signal equivalent circuit
MOS in saturation

active load

pb: body effect of Q1

The CMOS CG amplifier:(a) circuit;(b) small-signal equivalent circuit

 CMOS common-gate amplifier
with current mirror as active load
(serve in combinazione con altri stadi)

pb: body effect of Q1

active load vo
( g m1 + g mb1 ) (ro1 ro2 ) =
vi
= g m1(1+ ) (ro1 ro2 )
The CMOS common-gate amplifier: (a) circuit; (b) small-signal
equivalent circuit; and (c) simplified version of the circuit in (b).

 Source Follower (Common drain)
with Current Source as active load (1)
IF MOS in saturation

pb: body effect of M1

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Source Follower (Common drain) with Current Source (2)
Current mirror as active load

small-signal equivalent circuit

MOS in saturation

active load

pb: body effect of Q1

The source follower: (a) circuit; (b) small-signal equivalent circuit;

Appendix D:
D.3 Source-Absorption Theorem

Figure D.4 The source-absorption theorem.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Source Follower (Common drain) with Current Source (2)
Current mirror as active load

pb: body effect of Q1

Use source-absorption theorem

vo
=
( g m1) (ro1 ro2 )
active load
v i 1+ ( g m1 + g mb1 ) (ro1 ro2 )

The source follower: (a) circuit; (b) small-signal equivalent
circuit; and (c) simplified version of the equivalent circuit.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
5.9.6 The n-channel Depletion-Type MOSFET

Figure 5.63 The n-channel Depletion-Type MOSFET (a) transistor with current and
voltage polarities indicated; (b) the iDvGS characteristic in saturation.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
Figure 5.63 The current-voltage characteristics of a depletion-type n-channel
MOSFET for which Vt = 4 V and kn(W/L) = 2 mA/V2: (b) the iDvDS
characteristics; (c) the iDvGS characteristic in saturation.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
The relative levels of terminal voltages of a depletion-type
NMOS transistor for operation in the triode and the
saturation regions. The case shown is for operation in the
enhancement mode (vGS is positive).
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
nMOS amplifier with depletion load
Voltage transfer characteristic
VTC
 Small-signal equivalent circuit of the
depletion-load amplifier
(if Q1 and Q2 in saturation region III of VTC)

With the body effect of Q2

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.
 Small-signal equivalent circuit of the
depletion-load amplifier
(if Q1 and Q2 in saturation region III of VTC)

With the body effect of Q2

Use source-absorption theorem: 1/gmb2

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright 2010 by Oxford University Press, Inc.