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VSWR-Tolerant Push-Pull
Class DEodd/CMCD RF PA
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ALSO PUBLISHED ONLINE AT: SEPTEMBER2016
www.highfrequencyelectronics.com Vol. 15 No.9
22 38 16
Feature Article Feature Article Featured Products
VSWR-Tolerant Push-
Pull Class DEodd/ Advantages of Platinum
CMCD RF PA as a Barrier Metal
By David Pacholok, Paul on Thin Film Hybrid Including Spectrum
Reich, and Jim Spangler Microelectronics Elektrotechnik,
Substrates NuWaves Engineering,
The push-pull Class Marki Microwave,
DEodd PA has a rather By Joe Krasucki SRTechnology, RelComm
long and interesting Thin film coated substrates Technologies, Pulsar
history. have been used for many Microwave, Richardson
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microcircuits.
44 12 6
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The RFI invites short responses (five pages or fewer) that
explore some or all of the following technical areas for
both fully integrated systems and subsystems:
Conceptual designs and performance capabilities,
including substantiating preliminary performance
data, if available, for the concept of operation(s)
Technology maturity assessment, including data to
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system demonstration
Program outline for maturing the system to the
point where it would be ready for demonstration,
Ideas Sought for Protecting Against Small
including high-level rough order of magnitude
Unmanned Air Systems (ROM) cost and schedule
System affordability assessment
The rapid evolution of small unmanned air sys- Estimated size, weight, and power requirements
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ty, and technology maturity. Based on this review, DARPA designed to ensure that the exponentially growing
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Highly Repeatable
Electrical Performance
CMA
Mini-Circuits
VSWR-Tolerant Push-Pull
Class DEodd/CMCD RF PA
The push-pull Class DEodd (also called CMCD) PA has a rather long and interesting his-
tory, dating back to patent No. US2579374 issued to Donald V. Edwards (Figure 1)[1]. The year
was 1947, the same year as the invention of the bipolar transistor. Edwards
mainly intended his teachings to be used as a self oscillating high effi-
The push-pull Class
ciency power converter, but described an amplifier version in his drawings.
DEodd (also called
Later, his basic circuit, using the rather slow Silicon bipolar parts of the
CMCD) PA has a rather
day, saw widespread use in the early days of electronic fluorescent ballasts
long and interesting
manufactured by Triad-Utrad/Magnetic (now Universal Lighting), Philips/
history.
Advance and others. Millions of these ballasts were produced roughly from
1977 through today configured as a power oscillator. As Vertical MOSFET
technology improved, and dropped in price, the Edwards Converter slowly diminished its vol-
ume in the lighting market.
In 1975 Nathan Sokal invented the Class E Converter, and taught the world the concept of
the 100% efficient RF power amplifier in a novel, elegant single ended form [2]. Since then
many researchers have invented, or at least reinvented, many other classes and subclasses of
high efficiency PAs. The search for even more such classes continues today, mainly driven by the
continuously exploding wireless market in the GHz range.
Figure 1 Edwards Converter using vacuum tubes, copy of the front page of patent.
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100 Vdc
plastic sealing, wireless power transfer, VSWR 3:1
1.72 nF
resin curing and so forth. Such applica- 160 -J400
IRF830 ID
tions normally require output powers of IRF830 160 +J400
several 10s to many 1000s of watts. The Gate
Drive VSWR 6:1
switching devices used most in such
applications are either low-cost Duty cycle
is 50%
Switchmode Vertical MOSFETS, or very
rugged, high dissipation RF-designed
MOSFETS whose performance comes at Figure 2a. Basic Simulation Circuit without a matching trans-
a price. Both types of devices normally former and without any diodes into 500 . The VSWR is 1:1.
operate from 100 to 300 VDC to provide
high load impedance and thus lower passive component losses.
Despite the high potential efficiency, simplicity and inherent harmonic cancellation of the Current Mode Class D
(CMCD or push-pull Class DEodd) PA, it has seen little use in the power and frequency ranges above. In our work
with this amplifier class we have found that it is extremely intolerant of load Voltage Standing Wave Ratio (VSWR),
Narda-MITEQ L-3com.com
more so than most RF Switching PA topologies. Even 1.5:1 VSWR upsets commutation and reduces efficiency signifi-
cantly. Higher VSWRs such as 3:1 result in gross over dissipation of the switches, and failure of low-cost Switchmode
parts. Let us examine the causes of this power and efficiency loss:
25
CMCD RF PA
Figure 2c. This is a simulation of the basic circuit, shown in Figure 2, without any diodes, driving into
a capacitive 3:1 load. The black trace is the Vt Tank Voltage and MOSFET Drain Voltage, the blue trace
with spikes is the Id Drain Current, exceeding 45 Amps.
The 2nd loss mechanism is due to the FET switches conducting the tank current for the 19.3 degrees. The Off FET
conducts via its Body diode, the On FET through its enhanced channel, with both in series.
The Z of our tank is:
Z = SQRT(L/C) (eqn.4)
Substituting our values, SQRT(8uH/1.725nF) = 68 ohms.
Vpeak = * Vcc (eqn. 5)
At Vcc = 100V, tank peak voltage is x Vcc = 314 volts, resulting in a peak current of 4.62 amps. At the 160.7
degree switch-over, tank current is
4.62 * Cos(160.7) = 4.36 Amps (eqn. 6)
This 4.36 Amps is added to the 1.0 amp 50% square wave that would normally flow through the FET at 1:1 VSWR
causing extra dissipation. This dissipation by
P = I2R * duty cycle (eqn. 7)
is about (5.4^2 x 1.5 ohm) x 19.3degrees / 360degrees = 2.4 Watts per FET. This does not include the forward body
diode drop of the opposite FET.
Taken together, the FETs see about 30 extra watts of dissipation. Similar commutation and loss issues occur at
other load phase angles, such as when the Push-pull Class DEodd is exposed to an inductive VSWR.
A word of caution about the body diode of Vertical MOSFETS is in order here: This diode is really a parasitic
NPN transistor with its B-E junction more or less shorted by the manufacturing process. If current is sent through
this or any PN junction diode it accumulates minority carriers which persist until natural recombination takes place.
This takes typically between several hundreds of nSec and several uSec. If the FET is turned off into high dV/dT
before recovery is complete, the body diode is subject to forced recovery, current crowding, high dissipation and pos-
sible failure.
In the late 1990s Server power supplies began dying mysteriously under low load in the middle of the night in a
circuit known as the phase-shifted ZVS converter due to this cause. The semiconductor manufacturers responded with
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CMCD RF PA
90 Turns 16
Clamp
200 uH
100 Vdc
(4)
Clamp Xrmr
VSWR 6:1
L L= 7 uH
30 Turns
k ~0.93 VD
IRF830
Gate
ID
Drive
IRF830
Figure 3 Functional new circuit with test points added, Clamp Diodes, and Drain Diodes, and the 50
impedance matching transformer for measurements. (VT =Tank Circuit Voltage, VD = MOSFET Drain
Voltage. And ID = Drain Current.)
FETs having Body Diode Trr (Reverse Recovery Time) times reduced by a factor of 5 or more compared to standard
devices.(ref 3). While these designer FETS solved the Server problem at 250KHz, allowing body diode conduction in
the MHz region remains a potential FET killer.
Solutions Explored
Our first attempt was to take a lesson from D.V. Edwards and realize that tubes do not have a body diode or anti-
parallel diode of any sort. A Cree Zero Recovery 1.7 A 600 V SiC Schottky diode was connected in series with each
drain to prevent reverse current flow. This improved the drain current waveforms under capacitive and inductive
VSWRs, but efficiency dropped from to 91% to 82% at 1:1 VSWR. Given the 1.7 volt drop of the SiC diode, an effi-
ciency drop under 2% was expected.
Waveform investigation of the drain terminals showed the cause: the diode caused the CDS of the FETs to peak
charge to nearly the Pi x Vcc = 314 V peak, and the energy thus stored was dissipated at FET turn-on:
Dissipation is:
Pwatts = *Cds(Vds2) * Frequency (eqn. 8)
= 0.5 x 60pF x 314^2 x 1.356E6 = 4.02 Watts/ FET, OR ~8 Watts for the converter.
We reasoned that connecting an inductance between the drain terminals to resonate out ONLY the Cds might be
a solution, the main tank being diode isolated from the FET drain from 90 to 180 degrees of the off-time. The induc-
tance was calculated from the equation:
L=1/(4 2F 2CDS)= 138uH (eqn. 9)
This was tested in simulation and on the bench. The simulation showed very near ZVS at 1:1 VSWR with our
simplified FET model. At Vcc=25V, commutation as tested was ZVS but higher voltages drove the varactor-like Cds
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VT 30 40
100 Vdc
down, and we settled on 200 uH being a good empirical choice. The 1:1 VSWR efficiency increased to 89%, near that
expected. Capacitive and Inductive VSWRs at 3:1 provided low stress current waveforms, as did purely resistive
VSWR.
Then a major issue with reactive VSWR was then found: The drain voltage waveforms no longer obeyed the Vpeak
= x Vcc equation. (eqn. 5) Peak voltages in excess of 5 x Vcc were observed. The reason for this is that the Classic
(No series Diodes) push-pull CMCD is a bidirectional converter wherein the body-source diodes recycle excess tank
circuit energy resulting from the reactive portion of the load. [4]
Final Circuit
Our final solution is a bit brute force as shown in Fig 3. A secondary winding was added to the 200 uH commu-
tating tank inductor that formed a 3:1 step-down transformer. By rectifying this and feeding the DC back to Vcc, a 3:1
energy recycling drain voltage clamp was formed. The 200uH commutating tank inductor consisted of 90 turns # 30
AWG on a Ferroxcube 4F1 I-core solenoid, 30 turns of #21 were overwrapped with a layer of Teflon tape as insulation.
This secondary was connected to a diode full bridge consisting of 1.7 amp 600 V SiC diodes. This held the drain
voltage below 350 Vpeak for any point on the 3:1 VSWR circle. Due to the 7.1 uH leakage inductance between pri-
mary and secondary, the clamping action is soft. Higher reactive VSWRs create higher drain voltages and more cur-
rent through the clamp winding.
As purely resistive VSWR does not cause tank detuning and commutation mistiming, these waveforms are not
presented. Practical implementations of the CMCD often include an inductor in series with the load to limit power
with low load resistances or shorts. In such cases purely resistive VSWR will cause mistuning and commutation issues
as presented above.
Efficiency
The efficiency was measured for each of the four non-resistive loadings. The Efficiency Table is a summary of the
results.
EFFICIENCY TABLE
Circuit Loading New circuit with diodes(Fig. 3) Old circuit without diodes (Fig. 4)
Capacitive VSWR 3:1 82 % 50 %
Inductive VSWR 3:1 75 % 71 %
Capacitive VSWR 6:1 71 % 42 %
Inductive VSWR 6:1 62 % 51%
Figure 4a New circuit shown in Figure 3, with an Figure 4b Inductive Load with a VSWR 3:1 using
inductive load and a VSWR 3:1. the circuit shown in Figure 4. Please note the
ringing since there are no drain diodes.
31
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CMCD RF PA
Figure 6a. This shows the voltage and current Figure 6b. Inductive load with a VSWR 6:1 using
waveforms for an inductive load with a VSRW 6:1 the Classic CMCD shown in Figure 4. Please note
using new circuit shown in Figure 3. the ringing since there are no steering or clamp-
ing diodes.
Diode Notes
This diode isolation is only as good as the diodes capacitance under reverse voltage; in the case of the CMCD1.760
SiC diodes this is about 10 pF at Vr = 100V. These diodes are true Shottky diodes, their reverse current is due only to
charging the non-linear junction C under reverse bias, they have no Ta where a diode is essentially ON in reverse,
and no Tb wherein energy is lost by the diode going through a dissipative forced recovery period as happens with PN
junction devices. Panasonic and Transphorm both announced ultra-low capacitance 600V GaN diodes having only 0.8
V forward drop in the 2012-2013 time frame, but these devices seem to not be commercially available. [5, 6]
Circuit Limitations
It should be understood that at inductive and capacitive VSWR the final circuit does not achieve true ZVS at both
turn-on and turn-off as it does with a non-reactive load. In the capacitive 3:1 VSWR example, the Cds remains charged
to about 100 volts, and this energy is dissipated as heat. In the example circuit the power dissipation due to Cds (about
60 pF) was 0.432 Watts/FET. In contrast, the Classic CMCD swallows the ENTIRE stored tank energy in the 1725 pF
tank capacitor for a loss of 12.4 W per FET.
The implication of this is that this new circuit provides real benefits in a non-Cds-limited situation. Cds limitation
occurs when most or all of the tank capacitance is the switch Cds, not in an external tank capacitor. This limits its use
to below 30 MHz with current semiconductor technology. A more obvious limitation is supply voltage. At Vcc= 300V,
the efficiency losses in the diode drops, Vf, are about 0.6%, rising to about 2% in our Vcc=100V example. Using this
circuit at progressively lower Vcc levels incurs progressively higher losses.
Max Eff = (Vcc-Vf) x 100% (eqn. 10)
Another limitation is circuit complexity; we had hoped for a simpler solution. 6 SiC diodes are needed as well as a
commutating inductor/transformer with tightly coupled windings. The distributed capacitance and leakage induc-
tance limit maximum frequency. As to cost, it should be pointed out that the SiC diodes used in this circuit are usable
with a Vcc up to 300V at 2 amps drain current, i.e. a 600 watt RF power supply. These diodes are $0.50 each in 5000
quantity, so we feel our goal of low BOM cost is met. In comparison, automatic load matching systems normally
required are EXPENSIVE. In some applications we hope that our work may eliminate them entirely, or at least reduce
their requirements and cost.
Conclusion
We designed, analyzed, and tested a CMCD RF amplifier, using diode networks and an added commutating tank
circuit to increase transistor tolerance to load mismatch. We noted that peak current and dissipation due to impedance
mismatches were reduced with this configuration. We hope that our work will inspire others to investigate this topol-
ogy as an inexpensive means to achieve greater VSWR tolerance with low cost semiconductors.
www.ophirrf.com
310.306.5556
Get info at www.HFeLink.com
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Advantages of Platinum as a
Barrier Metal on Thin Film
Hybrid Microelectronics
Substrates
By Joe Krasucki
Thin film coated
substrates have been
Thin film coated substrates have been used for many years to fabricate
used for many years to
hybrid microcircuits for DC to millimeter frequency applications. These
fabricate hybrid
generally passive microcircuit substrates are used for interconnecting
microcircuits.
various chip components to make a complete electronic circuit in a small
and reliable package similar to printed wiring boards, but smaller.
Thin film metallization systems or stackups used generally consists of gold/barrier
layer/gluon layers on a hybrid substrate. The chosen metal stackup must meet several crite-
ria:
A. Conduct DC to Millimeter frequencies with little or no loss
B. Be compatible to normally assembly methods (wire bond, solder etc.)
C. Be metallurgically & chemically stable with long term reliability
D. No deleterious migration of metal up/down through the metal system.
Gold is the conductor of choice followed by a barrier metal between the gold and underly-
ing gluon metal which attaches the whole system to the substrate. The two main functions of
the barrier layer material are:
A. Prevent inter-diffusion of metals up or down through the metal system and the under-
lying substrate.
B. Prevent solder leaching of a eutectic or soldered component from the substrate.
C. To prevent wire bond problems and promote long term circuit reliability.
Choosing a Barrier
The choice of a suitable barrier material is necessary. Fortunately there are two reliable
barrier materials available: palladium and platinum. Both prevent metal diffusion or migration
of between metal layers and underlying substrates. Also both are solderable and compatible
with almost all currently available solders. Neither palladium nor platinum form oxides or
migrate easily. Though extreme, palladium may, under long term high temperature exposure
alloy with the top gold conductor metal. This is rarely encountered but can happen.
Platinum, however, is a well-known barrier to metal migration and is eminently solderable
with all normal solders encountered in the microelectronics technology industry. Significantly,
it only alloys with gold at extreme temperatures not found in hybrid and passive component
fabrication technology. The thickness of platinum normally used as a barrier layer is very
robust 1250 2000 Angstroms (5-8 microinches). Platinum may be described euphemistically
as the Platinum Standard of barrier materials. Platinum layers of 1250 2000 Angstroms
thickness are generally used. It is easily vacuum sputter coated onto substrates and due to the
thin-ness. Platinum is economical, at only ~$0.04 per 2 x 2 substrate. (Based on $1250 per
Tr. Oz. fab cost.)
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voltages and signals as well as a standard USB mini-b
It is a true multiport
vector network analyzer
and can drive all ports
in parallel without the
Rohde & Schwarz has expanded the frequency range
of the R&S ZNBT multiport vector network analyzer up
to 20 GHz. The R&S ZNBT20, with a starting frequency
of 100 kHz and up to 16 integrated test ports, offers fast
sweep times and excellent RF performance. It is a true
multiport vector network analyzer and can drive all ports
in parallel without the need for internal switching.
Parallel measurements increase the throughput tremen-
need for internal dously, which is particularly important for production
applications.
switching. The high number of ports is relevant for the produc-
tion of both active and passive multiport components
such as frontend modules for multiband mobile phones or
high-speed data cables. In addition, signal integrity tests
The new R&S ZNBT20 from Rohde & Schwarz is the can be performed for high-speed transmission standards,
first true multiport vector network analyzer in the micro- especially when combined with the R&S ZNBT-K20
wave range with up to 16 integrated test ports. The option for extended time domain analysis, which allows
unique hardware architecture from the R&S ZNBT8 has eye diagrams, rise time and skew to be displayed on the
been extended to 20 GHz. This allows users to character- R&S ZNBT.
ize multiple devices under test in parallel and thus
Rohde & Schwarz
increase throughput tremendously. The R&S ZNBT offers rohde-schwarz.com
the high measurement performance of a two-port network
analyzer at each of its test ports.
Harmonic Mixer
OML offers a WR-03 (220-325
GHz) harmonic mixer with stan-
dard gain horn antenna (+24 dBi).
The M03HWD Series will expand
your existing spectrum analyzer
capabilities in order to conduct
millimeter wave measurements.
This solution is compatible with
most spectrum analyzers offering
optional external mixer capabili-
ties. An option for test data in elec-
tronic CSV format is also avail-
able.
OML
omlinc.com
49
Highlights Product Showcase
Attenuator
Mini-Circuits RUDAT-13G-90
is a general purpose programma-
ble RF attenuator supporting fre-
quencies from 10 to 13000 MHz
with attenuation from 0 to 90 dB
in 0.5 dB steps. Its unique design
maintains linear attenuation
change per dB, even at the high-
est attenuation and frequency
settings. The attenuator is con-
trolled via USB, RS232 or SPI. It
comes housed in a compact, High Performance Adhesives
shielded metal case. for Electronic Assembly
Mini-Circuits
minicircuits.com
Measure 3.74
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Circuit Boards 3.72
Laminates 3.70
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! <I-M!-IFJ('!J+'J4!'I-M!*0!G-'4!EI-*!:!+'J'I*IH('!F'I-G+'F'%*4!IG*0FI*'1!F'I-G+'F'%*!
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Product Focus
ible sensors along with the only SPI & I2C sensor avail-
LadyBug manufactures a able.
With our patented NoZero NoCal feature, it is not
broad line of high quality, necessary to zero or calibrate before making measure-
first-tier NIST-traceable USB ments, even for low-level measurements requiring high
accuracy. Simply connect and measure. The sensors are
power sensors. housed in a robust metal enclosure for durability and
offer a variety of connectors including N, SMA, 3.5mm
and 2.92mm. We include limit-free, flexible applications
Power sensors are relied upon for calibration of high for use with our products at no additional cost.
accuracy equipment such as spectrum analyzers, network LadyBug covers the RF and microwave market with
analyzers, sources and other RF and microwave test three sensor types:
equipment. Each cable or adaptor that is inserted in Our True RMS sensors make highly accurate mea-
between a DUT (Device Under Test) and a power sensor surements on signals with any modulation format or
adds more uncertainty that must be considered when a bandwidth.
high accuracy measurement is required. We offer pulse sensors that will provide statistical
LadyBug offers a wide variety of connectors for its pulse information such as peak and pulse power, duty
power sensors. Order your sensor with a 2.92mm, Type-N, cycle and crest factor on pulse modulated signals as well
or SMA male or female, and place the sensor directly on as average CW power.
your DUT for a high accuracy measurement. Our Pulse Profiling sensors provide time domain
LadyBug manufactures a broad line of high quality, trace visibility of modulation information in addition to
first-tier NIST-traceable USB power sensors. Our prod- the measurements made by our pulse sensors
ucts are compatible with Windows XP, Win 7, Win 8, and
LadyBug Technologies LLC
Win 10; in 32 and 64 bit systems. We offer LINUX compat- ladybug-tech.com
MMICs
One of AMCOMs specialties is custom designing AMCOM has a dedicated customer support team and
MMICs and modules for our customers specific needs. takes pride in its tradition of identifying cost-effective
The custom products include all front-end components solutions for its customers. Please contact us with your
such as low-noise amplifiers, power amplifiers, switches, microwave component needs.
attenuators, phase shifters, and up/down converters. We
AMCOM
make every effort to meet our customers performance amcomusa.com
requirements including size and weight.
amcomusa.com
301-353-8400
The RF Power House
Wideband Power
Amplifiers (And More!)
Adapters
Models SWC-15VF-E1 and SWC-15VM-E1 are end
Power Device MMIC PA
(GaAs FET, GaAs PHEMT,
launch (180) V-Band waveguide to coax adapters that GaN/SiC)
cover the frequency range of 50 to 70 GHz. They are
designed and manufactured for instrumentation grade
quality but offered at a commercial grade price, allow-
PA Module
ing for an efficient transition between the rectangular Bias T
waveguide and 1.85 mm (V) coax connector. The right T/R Switch
angle (90) versions are offered under model numbers Attenuator
SWC-15VF-R1 and SWC-15VM-R1. Phase Shifter
SAGE Millimeter
sagemillimeter.com
401 Professional Drive | Suite 140 | Gaithersburg, MD 20879
Get info at www.HFeLink.com
53
Product Highlights
Capacitors, Inductors, and More
ATC designs, develops, manufactures and markets Multilayer Capacitors,
Single Layer Capacitors, Resistive Products, Inductors and Custom Thin Film
Products for RF, microwave and millimeter-wave applications. Our products are
primarily focused on the wireless communications infrastructure, fiber optic,
medical electronics, semiconductor manufacturing equipment, defense, aero-
space, and satellite communications markets. For over fifty years, ATCs family
of superior component and custom integrated packaging solutions has been
represented by THE ENGINEERS CHOICETM brand.
American Technical Ceramics
atceramics.com
Harmonic Mixer
OML offers a WR-10 (75-110
GHz) harmonic mixer with stan-
dard gain horn antenna (+24 dBi).
The M10HWD Series will expand
your existing spectrum analyzer
capabilities in order to conduct mil-
limeter wave measurements. This
solution is compatible with most
spectrum analyzers offering option-
al external mixer capabilities. An
option for test data in electronic
CSV format is also available.
OML
omlinc.com
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Building on over 50 years experience in MLC performance, ATC offers 100 Series P90 Superchips
and 700 Series NPO MLCs with Q greater than 10,000.
Typical Applications: High Reliability
High RF Power Ampliers Transceiver Modules Qualied to MIL-PRF-55681
High RF Power Switching Medical MRI Imaging S-Level Reliability*
Impedance Matching Coils QPL Approved (CDR Availability)
Induction Heating Low Noise Ampliers Supported by COTS
Filter Networks Synthesizers *ATC Capacitors are Qualied to S-Level
Mixers Failure Rate =0.001%/1000Hrs.@ 125C
Antenna Matching with 2X Rated Voltage Applied
Delay Lines
100B 700B .110 X .110 (2.79 X 2.79) 0.1 to 1000 0.1 to 5100 Up to 1500
100C 700C .250 X .250 (6.35 X 6.35) 1 to 2700 1 to 2700 100C: Up to 3600 / 700C: Up to 2500
inches (mm)
RF Amp
Exodus introduced the AMP1071 - a Solid-State RF requiring high power and ultra-wide band coverage. It
amplifier module covering the entire ultra-wide 2.0- has built-in protection circuits, high reliability and rug-
20.0GHz frequency range instantaneously at 20W CW gedness. Typical applications include High Power Testing,
minimum. Using State of the Art GaN devices, the EMI/RFI, EW and Communications and Jamming.
AMP1071 operates from a 32VDC source at less than 10A
Exodus Advanced Communications
consumption. This module is suitable for use with all exoduscomm.com
single channel modulation standards and applications
Harmonic Mixer
OML offers a WR-15 (50-75 GHz) harmonic mixer
with standard gain horn antenna (+24 dBi). The M15HWD
Series will expand your existing spectrum analyzer capa-
bilities in order to conduct millimeter wave measure-
ments. This solution is compatible with most spectrum
analyzers offering optional external mixer capabilities.
An option for test data in electronic CSV format is also
available.
OML
omlinc.com
57
Product Highlights
Attenuator
DS Instruments introduced the DAT64H, a compact panel user interface displaying current attenuation value
but full featured RF Step Attenuator that covers 100MHz and confirming device settings. The USB port is config-
to 12GHz. The minimum step size is 0.5dB. Attenuation ured as power source and industry standard COM port
can be manually via front panel controls, or remotely pro- requiring no additional drivers.
gramed from a PC over the range of 0 to 31.5dB with USB
DS Instruments
SCPI commands. Typical insertion loss at 10GHz is 10dB. dsinstruments.com
Maximum input power is +23dBm. It has a complete front
Mutiplexers
RLC Electronics multiplexers are available in two, distributed coaxial structures are employed to realize the
three of four channel versions. Adjacent passbands may lowest possible loss. RLC Electronics can supply multi-
be designed for a contiguous or non-contiguous response. plexers for most applications, including commercial, tele-
For passband frequencies below 2 GHz, lumped element com, and defense.
designs will often achieve the desired response in the
RLC Electronics
smallest package. At higher frequencies (up to 40 GHz), rlcelectronics.com
IQ Modulator
The SC5413A is a 400 MHz to 6 GHz direct IQ modu-
lator, up converting analog Inphase and Quadrature IF or
IQ baseband directly to RF. The frequency range of the
baseband/ IF is from DC to 160 MHz. It can also be oper-
ated as a single stage upconverter. The DC coupled dif-
ferential IQ pair may be driven by any dual channel Adapter
baseband source such as a dual channel arbitrary wave- Mini-Circuits KFFL-KF50+ is a coaxial K-Fem to
form generator. The local oscillator (LO) is supplied by an K-Fem adapter supporting a wide range of applications
external source such as the SignalCore SC5506A, and its from DC to 40 GHz. This model provides excellent VSWR,
replica may be used to drive another direct IQ upcon- low insertion loss, and flat response versus frequency. The
verter for coherent transmission. KFFL-KF50+ features a four-hole flange ideal for mount-
SignalCore ing connectors through panels in contained assemblies.
signalcore.com Mini-Circuits
minicircuits.com
Military Commercial
SSPA
The TTRM1010 is a Bi-Directional SSPA for small to
medium size UAS applications. In addition to its broad
frequency range, it also contains internal DC conversion
circuitry that allows it to be powered by an input voltage
range of 9-36VDC.
Visit us at EDICON USA 2016
Triad RF Systems Booth #707
triadrf.com
Frequency 100 kHz to 6 GHz Bandwidth up to 320 MHz
Low phase noise Tuning resolution 1 Hz
High dynamic range USB, SPI, RS-232 & PXIe
www.signalcore.com
Get info at www.HFeLink.com
59
Product Highlights
Hybrid Coupler
VidaRF offers a new high performance hybrid coupler with SMA connectors, operating temp -55 to 85 C. If
Model: VHC-10124A operating frequency 1-12.4GHz. required we could seal and paint to meet IP65 standards.
Type VSWR 1.30:1, Insertion Loss 1.0dB and Isolation
VidaRF
20dB min. Power handling Average 50Watt ; Peak 1KW vidarf.com
SuperMini Board-to-Board
DC to 67 GHz blind-mate
1.0 mm (W) Connectors connectors assure interconnect
1.0 mm (W) DC to 110 GHz high-frequency connectors from Southwest performance for PCBs stacked
Microwave include field replaceable 2- and 4-hole Flange-mount and stan- as tightly as 3 mm.
dard or metric Thread-in Connectors, Direct-solder Cable Connectors, and
clamp-on End Launch Connectors, including low profile and reduced-size
low-profile versions. These 1.0 mm (W) precision connectors are rugged and
durable, with operational temperature rating of -55C to 165C. 1.0 mm con-
nectors provide mode-free operation through 110 GHz, offering well-matched
impedance, excellent repeatability, and the industrys lowest VSWR (1.28:1),
insertion loss (< 0.5 dB) and RF leakage ( -100 dB).
Southwest Microwave
southwestmicrowave.com Size 8, 12, 16 and 20
Coax Contacts for Standard,
Multi-Cavity Connectors
to 110 GHz save space and
reduce panel weight and size.
W!
NETHE WIDEST BANDWIDTH IN THE INDUSTRY
IN A SINGLE MODEL!
EP2K1+ 2 to 26.5 GHz
EP2W1+ 0.5 to 9.5 GHz
EP2C+ 1.8 to 12.5 GHz
RoHS Compliant
o S
Product availability is listed on our website.
COMPLIANT
Mini-Circuits
High Frequency Electronics (USPS 024-316) is published monthly by Summit Technical Media, LLC, 3 Hawk Dr., Bedford, NH 03110.
Vol. 15 No. 9 September 2016. Periodicals Postage Paid at Manchester, NH and at additional mailing offices.
POSTMASTER: Send address corrections to High Frequency Electronics, PO Box 10621, Bedford, NH 03110-0621.
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systems at high frequencies. Copyright 2016 Summit Technical Media, LLC
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