2SK3797

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)

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2SK3797
Switching Regulator Applications
Unit: mm

Low drain-source ON resistance: RDS (ON) = 0.32 (typ.)

High forward transfer admittance: |Yfs| = 7.5 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 600 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristic Symbol Rating Unit

Drain-source voltage VDSS 600 V

Drain-gate voltage (RGS = 20 k) VDGR 600 V
Gate-source voltage VGSS 30 V
DC (Note 1) ID 13
1: Gate
Drain current Pulse (t = 1 ms) A 2: Drain
IDP 52 3: Source
(Note 1)
Drain power dissipation (Tc = 25C) PD 50 W
Single pulse avalanche energy
EAS 1033 mJ JEDEC
(Note 2)
Avalanche current IAR 13 A JEITA SC-67
Repetitive avalanche energy (Note 3) EAR 5.0 mJ TOSHIBA 2-10U1B
Channel temperature Tch 150 C Weight: 1.7 g (typ.)
Storage temperature range Tstg -55~150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2
Thermal Characteristics

Characteristic Symbol Max Unit

Thermal resistance, channel to case Rth (ch-c) 2.5 C/W

1
Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W

Note 1: Ensure that the channel temperature does not exceed 150C during use of the device.

Note 2: VDD = 90 V, Tch = 25C (initial), L = 10.7 mH, IAR = 13 A, RG = 25

3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

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Electrical Characteristics (Ta = 25C)
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Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 25 V, VDS = 0 V 10 A

Gate-source breakdown voltage V (BR) GSS IG = 10 A, VDS = 0 V 30 V
Drain cutoff current IDSS VDS = 600 V, VGS = 0 V 100 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 600 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6.5 A 0.32 0.43
Forward transfer admittance Yfs VDS = 10 V, ID = 7.0 A 2.1 7.5 S
Input capacitance Ciss 3100
Reverse transfer capacitance Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 20 pF

Output capacitance Coss 270

Rise time tr 10 V ID = 6.5 A VOUT 60

VGS
0V
Turn-on time ton RL = 110
Switching time 50 30 ns
Fall time tf 50
VDD
200 V

Turn-off time toff Duty <

= 1%, tw = 10 s 215

Total gate charge Qg 62

Gate-source charge Qgs VDD
400 V, VGS = 10 V, ID = 13 A 40 nC

Gate-drain charge Qgd 22

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR 13 A
(Note 1)
Pulse drain reverse current (Note 1) IDRP 52 A
Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V 1.7 V
Reverse recovery time trr IDR = 13 A, VGS = 0 V, 1050 ns
Reverse recovery charge Qrr dIDR/dt = 100 A/s 15 C

Marking

K3797 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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ID VDS ID VDS
14 30
COMMON SOURCE 10V 8V COMMON SOURCE
10V
Tc = 25C Tc = 25C
12 PULSE TEST
7V 25 PULSE TEST

(A)
(A)

8V
7V
6.6V 6.2V
10

DRAIN CURRENT ID
DRAIN CURRENT ID

20
6.6V
8
5.8V 15
6 6.2V

5.4V 10
4
5.8V
5V 5 5.4V
2
5V
VGS = 4V
VGS = 4 V
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30

DRAINSOURCE VOLTAGE VDS (V) DRAINSOURCE VOLTAGE VDS (V)

ID VGS VDS VGS

30 10
COMMON SOURCE
COMMON SOURCE
Tc = 25
25 VDS = 20 V
DRAINSOURCE VOLTAGE
(A)

8 PULSE TEST
PULSE TEST
DRAIN CURRENT ID

20
6
VDS (V)

15
ID = 13 A
Tc = 100C Tc = 25C 4
10

ID = 6.5 A
2
5
ID = 3 A
Tc = 55C
0 0
0 2 4 6 8 10 0 4 8 12 16 20

GATESOURCE VOLTAGE VGS (V) GATESOURCE VOLTAGE VGS (V)

Yfs ID RDS (ON) ID

100 1
FORWARD TRANSIENT ADMITTANCE

COMMON SOURCE
DRAINSOURCE ON RESISTANCE

COMMON SOURCE Tc = 25C

VDS = 20 V PULSE TEST
PULSE TEST
RDS (ON) ()

Tc = 55C
Yfs (S)

VGS = 10 V
10 0.3
25
100 VGS = 15 V

0.1 0.1
0.1 10 100 0.1 1 10 100

DRAIN CURRENT ID (A) DRAIN CURRENT ID (A)

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RDS (ON) Tc IDR VDS
1 100
COMMON SOURCE COMMON SOURCE
DRAINSOURCE ON RESISTANCE

VGS = 10 V Tc = 25C

DRAIN REVERSE CURRENT

0.8 PULSE TEST PULSE TEST

10
RDS (ON) ( )

0.6

IDR (A)
ID = 13A
6.5

0.4 3 10
1
5
0.2 3 1 VGS = 0, 1 V

0 0.1
80 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1 1.2

CASE TEMPERATURE Tc (C) DRAINSOURCE VOLTAGE VDS (V)

Capacitance VDS Vth Tc

10000 5

Ciss
GATE THRESHOLD VOLTAGE

4
(pF)

1000
C

3
CAPACITANCE

Vth (V)

Coss
2
100
COMMON SOURCE
COMMON SOURCE VDS = 10 V
1
VGS = 0 V ID = 1 mA
f = 1 MHz Crss
PULSE TEST
10 Tc = 25C
0
0.1 1 10 100 80 40 0 40 80 120 160

DRAINSOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (C)

DYNAMIC INPUT/OUTPUT
PD Tc CHARACTERISTICS
80 500 20
(V)
VGS
DRAIN POWER DISSIPATION

DRAINSOURCE VOLTAGE

400 VDS 16
60
GATESOURCE VOLTAGE

VDD = 100 V
300 12
VDS (V)
PD (W)

40 200V

200 400V 8

COMMON SOURCE
VGS
20
ID = 13 A 4
100
Tc = 25C
PULSE TEST
0 0 0
0 40 80 120 160 0 20 40 60 80 100

CASE TEMPERATURE Tc (C) TOTAL GATE CHARGE Qg (nC)

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NORMALIZED TRANSIENT THERMAL rth tw

10
IMPEDANCE rth (t)/Rth (ch-c)

1
Duty=0.5

0.2
0.1
0.1
0.05
PDM
0.02
t
0.01 0.01
SINGLE PULSE T

Duty = t/T
Rth (ch-c) = 2.5C/W
0.001
10 100 1 10 100 1 10

PULSE WIDTH tw (s)

SAFE OPERATING AREA EAS Tch

100
ID max (PULSED) * 1200
(mJ)

100 s *
1000
ID max (CONTINOUS)
AVALANCHE ENERGY EAS

10 800
(A)

1 ms *
DRAIN CURRENT ID

600

DC OPERATION
Tc = 25C 400
1

200

*SINGLE NONREPETITIVE
0
0.1 PULSE Tc = 25C 25 50 75 100 125 150
CURVES MUST BE
CHANNEL TEMPERATURE (INITIAL)
DERATED LINEARLY WITH Tch (C)
INCREASE IN TEMPERATURE
VDSS max
0.01 BVDSS
1 10 100 1000 15 V
DRAINSOURCE VOLTAGE VDS (V) 15 V IAR

VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 10.7mH 2 B V
VDSS DD

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RESTRICTIONS ON PRODUCT USE 20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.

The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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