Low frequency transistor (20V,5A)

2SB1412

zFeatures zDimensions (Unit : mm)

1) Low VCE(sat).
VCE(sat) = 0.35V (Typ.) 2SB1412
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2118.

zStructure
Epitaxial planar type
PNP silicon transistor

(1) Base
ROHM : CPT3 (2) Collector
EIAJ : SC-63 (3) Emitter

Denotes h FE

zAbsolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 30 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 6 V
5 A(DC)
Collector current IC
10 A(Pulse) 1
Collector power 1 W
2SB1412 PC
dissipation 10 W(Tc=25C)
Junction temperature Tj 150 C
Storage temperature Tstg 55 to 150 C
1 Single pulse, Pw=10ms

zElectrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 30 V IC= 50A
Collector-emitter breakdown voltage BVCEO 20 V IC= 1mA
Emitter-base breakdown voltage BVEBO 6 V IE= 50A
Collector cutoff current ICBO 0.5 A VCB= 20V
Emitter cutoff current IEBO 0.5 A VEB= 5V
Collector-emitter saturation voltage VCE(sat) 0.35 1.0 V IC/IB= 4A/ 0.1A
DC current transfer ratio hFE 82 390 VCE= 2V, IC= 0.5A
Transition frequency fT 120 MHz VCE= 6V, IE=50mA, f=100MHz
Output capacitance Cob 60 pF VCB= 20V, IE=0A, f=1MHz
Measured using pulse current.

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1/3 2009.12 - Rev.C

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 2SB1412 Data Sheet

zPackaging specifications and hFE

Package Taping
Code TL
Basic ordering
2500
Type hFE unit (pieces)
2SB1412 PQR

hFE values are classified as follows :

Item P Q R
hFE 82 to 180 120 to 270 180 to 390

zElectrical characteristic curves

10 5 50mA 5k
VCE= 2V mA Ta=25C Ta=25C
5 45mA 30
A
COLLECTOR CURRENT : IC (A)

40mA 25m 2k
COLLECTOR CURRENT : IC (A)

2 4 35mA 20mA
Ta=100C

DC CURRENT GAIN : hFE

1 1k
25C
500m 25C 15mA 500
3 VCE= 5V
200m
10mA 200
100m
50m 100 2V
2
1V
20m 5mA 50
10m
1 20
5m
10
2m IB=0A
1m 0 5
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.4 0.8 1.2 1.6 2.0 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs.
characteristics characteristics collector current ( )

5k 5k 5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

VCE= 1V VCE= 2V Ta=25C

2k 2k 2
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

1k 1k
1
500 500
0.5
200 200
0.2
100 Ta=100C 100 Ta=100C IC/IB=50/1
25C 25C 40/1
/1
25C 0.1 30/1
50 50 25C 10/1
0.05
20 20
10 10 0.02
5 5 0.01
1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 1m 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 2m 5m 0.0 -0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation
collector current ( ) collector current ( ) voltage vs. collector current ( )

5 5 5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

lC/lB=10 lC/lB=30 lC/lB=40

2 2 2 25C
1 1 1 25C
Ta=100C
25C
0.5 0.5 0.5

0.2 0.2 0.2

0.1 0.1 0.1

Ta=100C 25C Ta=100C
0.05 0.05 0.05
25C
25C
0.02 0.02 0.02
0.01 0.01 0.01
2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 2m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)

Fig.7 Collector-emitter saturation Fig.8 Collector-emitter saturation Fig.9 Collector-emitter saturation

voltage vs. collector current ( ) voltage vs. collector current ( ) voltage vs. collector current ( )

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2/3 2009.12 - Rev.C

c 2009 ROHM Co., Ltd. All rights reserved.

2SB1412 Data Sheet

5 1 000 1000

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

lC/lB=50 Ta=25C Ta=25C

TRANSEITION FREQUENCY : fT (MHz)

500 VCE= 6V f=1MHz
2 25C 500 IE=0A
25C
1 Ta=100C 200

100 200
0.5
50
0.2 100
20
0.1 50
10
0.05
5
20
0.02 2
0.01 1 10
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 1 2 5 10 20 50 100 200 500 1000 0.1 0.2 0.5 1 2 5 10 20 50
COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.10 Collector-emitter saturation Fig.11 Gain bandwidth product Fig.12 Collector output capacitance
voltage vs. collector current ( ) vs. emitter current vs. collector-base voltage

1000 100
Ta=25C
EMITTER INTPUT CAPACITANCE : Cib (pF)

Ta=25C
f=1MHz 50 Single
nonrepetitive
IC=0A
COLLECTOR CURRENT : IC (A)

500 20 pulse
10 Pw
5
Pw

200
=1
=

0m
10

2 DC
0m

100 1
s

500m
50
200m
100m
20 50m
20m
10 10m
0.1 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 20 50 100 200 500
EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.13 Emitter input capacitance

Fig.14 Safe operation area
vs. emitter-base voltage
F(2SB1412)

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3/3 2009.12 - Rev.C

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