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Electronic Devices and Circuits (Formula Notes)

Thermal Voltage: VT (Voltage Equivalent of Temperature)
T
VT volt
11600

Leakage Current (I o )
Also called minority carrier current or thermally generated current.
In silicon it is in nano ampere range and in germanium 10is in micro ampere
it

range.
Io doubles for every 10C. For 1C, Io increases by 7%.
Io is proportional to the area of the device.
Advantages of smaller Io:
(i) Suitable for high temperature applications
(ii) Good Thermal stability
(iii) No false triggering

Energy Gap: Difference between the lower energy level of conduction band (CB)
E C and upper energy level of valance band (VB) E v is called as energy gap.

p
Metals: VB and CB are overlap to each other.
This overlapping increases with temperature.

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e is both in CB and VB.
Insulators: Conduction band is always empty. Hence no current passes.
Band gap: 5 eV 15 eV.
Semiconductor: Energy gap is small and it is in range of 1 eV.
At room temperature current can pass through a semi conductor.
Ge
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Energy Gap Si Ga As
Eg T 0 7.85 eV 1.21 eV XX
Eg T 300 K 0.72 eV 1.1 eV 1.47 eV
Energy gap at temperature T
For Ge Eg(T) 0.785 7.2 104 T
gr

For Si Eg(T) 1.21 3.6104 T

Energy gap decreases with temperature.
dv volt
Electric Field Intensity
dx meter
drift velocity v m2
Mobility of charge carriers
electric field intensity sec

Mobility Vs curve
< 10 3
constant
10 3 10 4 1/ 2
1
10 4

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So drift velocity: V d Vd 1/ 2 Vd constant

Mobility indicates how quick is the e or hole moving from one place to
another.
Electron mobility > hole mobility
Mobility of charge carriers decreases with the temperature.
T m
Mass Action Law: In a semi conductor under thermal equilibrium (at constant
temperature) the product of electrons and holes in a semiconductor is always
constant and equal to the square of intrinsic concentration.
[no po ni2 ]
no Concentration of e in conduction band
Po Concentration of holes in valance band
ni Intrinsic concentration at given temperature
ni2
Majority carrier concentration =
Minority carrier concentration
Eg

p
Intrinsic concentration ni2 AoT 3e 2 KT

ni is a function of temperature and energy gap.

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Einsteins Equation: Relation between diffusion constant, mobility and thermal
voltage.
Dn D P
VT KT
n P
D n e diffusion constant
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D
The unit of is volts. Where,
D p Hole diffusion constant
Diffusion and Drift Current:
Diffusion Current: It is defined as migration of charge carriers from higher
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concentration to lower concentration due to concentration gradient.

Drift Current: It is flow of current through the material or device under the
influence of voltage or electric field intensity.
Total current density in a semi conductor

J Jn Jp


(Total current) (Current carried by e ) (Current carried by holes)
Jn Jn Jn

current due to e
e drift current density
e diffusion current density
dn
For e J n nqn qDn A / cm 2
dx
dp
For holes J p pq p qDp A / cm2
dx
e diffusion length Ln Dn cm

Hole diffusion length LP DP cm

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Conductivity
In Metals: Metals are uni-polar, so current is carried only by e
nqn
In metal, conductivity decreases with temperature.
In Semi Conductors nqn pq P
n Concentration of e in CB
e Concentration of holes in VB
n , p Mobility of holes and electrons
Conductivity of pure semi-conductor increases with temperature

In Extrinsic Semi-conductor
For n type N D qn ND = donor concentration
For p type N A q p NA = acceptor concentration
In extrinsic semiconductor (SC) below the room temperature, conductivity
increases. But above the room temperature their conductivity decreases.

Periodic Table:

p
III IV V
B C N

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Al Si P

Ga Ge As
In Sn Sb
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e = 1.602 1019 C, m = 9.11031 kg , F force on electron in uniform electric field E

eE
F=eE; acceleration a =
m
gr

If electron with velocity ' v ' moves in field ' E ' making an angle ' ' can be
resolved to v sin , v cos .
Effect of Magnetic Field B on Electron.
mv 2 m
When B & Q are perpendicular path is circular r = ; Period ' t ' =
Be Be
When slant with ' ' path is # Helical.
EQUATIONS OF CRT
lL
ELECTROSTATIC DEFLECTION SENSITIVITY Se =
2dVa
e
MAGNETIC DEFLECTION SENSITIVITY S m = lL
2mVa
2eV
Velocity due to voltage V, v =
m

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When E and B are perpendicular and initial velocity of electron is zero, the path is
u
Cycloidal in plane perpendicular to B & E. Diameter of Cycloid=2Q, where Q= ,

E Be
u= , = .
B m

Si , Ge have 4 electrons in covalent bands. Valency of 4. Doping with trivalent

elements makes ' p ' , Pentavalent elements makes ' n ' semiconductor.

Conductivity = e ( n n + p p ) where n, p are concentrations of Dopants.

n & p are mobilitys of electron and hole respectively.

Diode equation
Vd
I d = I s e nVT 1

p VT =
kT
; K= Boltzman Constant
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q
ad

Vd VT kT N A N P
rd = = ; Vo = ln
I d I q ni 2
gr

T = 00 C + 273; q = 1.602 1019 C

0 0
Diode drop changes @ 2.2mv / C , Leakage current I s doubles on 10 C

dq
Diffusion capacitance is cd = of forward biased diode it is I
dv
n
Transition capacitance CT is capacitance of reverse biased diode V n = 1 to 1
2 3

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ZENER DIODE FWD Bias Normal

si Diode 0.7 V Drop
Reverse Bias
Zener drop = Vz forV > Vz
-3-

ZENER REGULATOR

Vi Vz
Is = ;Vi >> Vz
Rs

Vz
rz =
I z

TUNNEL DIODE

p
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Conducts in
f , r , Quantum mechanical tunneling in region a-0-b-c.
b b
-ve resistance b-c, normal diode c-d.
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I p = peak current, I v = valley current; v p =peak voltage 65 mV, vv =valley voltage

0.35 V. Heavy Doping, Narrow Junction , Used for switching & HF oscillators.

VARACTOR DIODE
gr

Used in reverse bias & as tuning variable capacitance.

K Co
CT = ; n=0.3 for diffusion, n=0.5 for alloy junction, CT =
(VT + VR )
n n
1 + VR
VT

CB 1
is figure of merit, Self resonance f o =
C25 2 LS CT

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PHOTO DIODES

-4-

Diode used in reverse bias for light detection.

Different materials have individual peak response to a range of wave lengths.

p
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BJT, Bipolar Junction Transistor has 2 Junctions: BE, BC
I nE I
Components of current are I nE , I pE at EB junction where = = nE
I nE + I pE I E
I nc
= Emitter efficiency, * = transportation factor.
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I nE

BE = f / b; BC = r / b
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Ie = Ib + Ic
Ic I
= ; = c
Ie Ib
Doping Emitter Highest
Base Lowest
Ie > I c > Ib

Leakage currents : I CBO , I CEO , I EBO

I CEO = (1 + ) I CBO

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3 Configurations are used on BJT, CE, CB & CC

Common Emitter, VI characteristics

IC
= VCE
IB

VBE V
Ri = hie = = re ; rce = r0 = ce
I B I c

p AMPLIFIER COMPARISON
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COMPARISON
CB CE CF

BE BC
Ri LOW MED HIGH
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SATURATION f/b f/b

AI AI +1
ACTIVE f/b r/b
AV High High <1
gr

CUT OFF r/b r/b

Ro High High low

FIELD EFFECT TRANSISTOR, FET is Unipolar Device

Construction n-Channel p-Channel

S=Source, G=Gate, D=Drain

GS Junction in Reverse Bias Always
Vgs Controls Gate Width

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MOSFET: Metal Oxide Semiconductor FET, IGFET

Depletion Type Mosfet Symbols Enhancement Mosfet

Depletion Type MOSFET can work width Vgs > 0 and Vgs < 0

MOSFET JPET

High Ri = 10 108
10

R0 = 50 k 1m

Depletion Depletion
Enhancement Mode Mode
Transfer Forward
Delicate Rugged

p
Characteristics Characteristics
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Enhancement MOSFET operates with, Vgs > Vt , Vt = Threshold Voltage
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gr

Forward Characteristics Transfer Characteristics

VDS ( sat ) = VGS VT , I ds (ON ) = K (VGS VT )

2

JFET I D Table COMPARISIONS

Vgs ID BJT FET

0 I DSS Current controlled Voltage controlled

0.3 VP I DSS High gain Med gain

2
Bipolar Unipolar
0.5 VP I DSS
4 Temp sensitive Little effect of T
VP 0 High GBWP Low GBWP

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