12/12/2016 CompetitiveExams:ElectronicsMCQs(PracticeTest9of13)Examrace

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CompetitiveExams:ElectronicsMCQs(PracticeTest9of13)
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1.WhichofthefollowingstatementsaretrueaboutVIcharacteristicofSCR?

a.HoldingcurrentismorethanLatchingcurrent

b.SCRwilltriggeriftheappliedvoltageexceedsforwardbreakovervoltage

c.SCRcanbetriggeredwithoutgatecurrent

d.WhentheSCRisinreversebiased,smallleakagecurrentwillflow

Correctchoiceis:

a.A,BandC

b.Allaretrue

c.B,C,D

d.C,D

Answer:c

2.whichofthefollowingstatementsaretrueaboutBJT?

a.IthasmorepowerhandlingcapabilitythanMOSFET

b.HashigherswitchingspeedthanIGBTandMOSFET

c.Haslowonstateconductionresistance

d.Hassecondbreakdownvoltageproblem

Correctchoiceis:

a.Allaretrue

b.1,2,3,4

c.1,3,4

d.2,3,4

Answer:c

3.ForaJFET,whenVDSisincreasedbeyondthepinchoffvoltage,thedraincurrent

a.Increases

b.Decreases

c.Remainsconstant

d.Firstdecreasesandthenincreases

Answer:c

4.nchannelFETsaresuperiortoPchannelFETs,because

a.Theyhavehigherinputimpedance

b.Theyhavehighswitchingtime

c.Theyconsumelesspower

d.Mobilityofelectronsisgreaterthanthatofholes

Answer:d

5.Whichofthefollowingistrueaboutthediodes

a.Duringforwardbiasedsmallamountofvoltagedropwillappearacrossanodeandcathode

b.IfthereversevoltageexceedVRRMthediodewilldestroy
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c.trrisdependsonsoftnessfactor

d.schottkydiodeshavelowtrr

Correctchoiceis:

a.Allaretrue

b.1,24

c.1,2,3

d.2,3,4

Answer:c

6.TheMOSFEThas

a.HigherPowerhandlingcapabilitythanBJT

b.FasterswitchingspeedthanBJT

c.Highonstateresistance

d.Secondarybreakdownvoltageproblem

whichoftheabovestatementsareincorrect?

Options:

a.1,2,4

b.2,3

c.Alloftheabove

d.2,3,4

Answer:a

7.Whichofthefollowingiscalledasuncontrolledsemiconductordevice?

a.Diode

b.Thyristor

c.GTO

d.MOSFET

Answer:a

8.Whichofthefollowingisahalfcontrolledsemiconductordevice?

a.MOSFET

b.GTO

c.MCT

d.SCR

Answer:d

9.Whichofthefollowingabbreviationisnotapowersemiconductordevice?

a.SIT:StaticInductionTransistor

b.SITH:StaticInductionThyristor

c.MCT:MOSControlledThyristor

d.IGCT:IntegratedGateCommutatedThyristor

Options:

a.1and4

b.1only

c.1,2,4

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d.Allarepowersemiconductordevice

Answer:d

10.Whichofthefollowingstatementsarecorrect?

a.IGBTiscurrentdrivendevice

b.IGCTisvoltagedrivendevice

c.MOSFETisvoltagedrivendevice

d.GTOisminoritycarrierdevice

Options:

a.1,2,3

b.2,3,4

c.Allarecorrect

d.Nonearecorrect

Answer:b

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