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12/12/2016 CompetitiveExams:ElectronicsMCQs(PracticeTest11of13)Examrace

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CompetitiveExams:ElectronicsMCQs(PracticeTest11of13)
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1.Whichofthefollowingstatementsarecorrect?

a.Thyristoriscurrentdrivendevice

b.GTOiscurrentdrivendevice

c.GTRiscurrentdrivendevice

d.SCRisapulsetriggereddevice

Correctchoiceis

a.1and2

b.1,2,3

c.All

d.4only

Answer:c

2.Whichofthefollowingstatementsarecorrect?

a.GTOisapulsetriggereddevice

b.MOSFETisunipolardevice

c.SCRisabipolardevice

d.ContinuousgatesignalisnotrequiredtomaintaintheSCRtobeinONstate

Correctchoiceis

a.1,2,4only

b.1,2only

c.4only

d.All

Answer:d

3.Whichofthefollowingisnotafullycontrolledsemiconductordevice?

a.MOSFET

b.IGBT

c.IGCT

d.SCR

Answer:d

4.Whichofthefollowingisnotassociatedwithpnjunction

a.junctioncapacitance

b.chargestoragecapacitance

c.depletioncapacitance

d.channellengthmodulation

Answer:d

5.Inapnjunctiondiodeunderreversebias,themagnitudeofelectricfieldismaximumat

a.theedgeofthedepletionregiononthepside

b.theedgeofthedepletionregiononthenside
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12/12/2016 CompetitiveExams:ElectronicsMCQs(PracticeTest11of13)Examrace
c.thepnjunction

d.thecenterofthedepletionregiononthenside

Answer:c

6.AnnchannelJFEThasIDSS=2mA,andVp=4V.Itstransconductancegm=(inmA/V)foranappliedgatetosourcevoltageVGS=2Vis

a.0.25

b.0.5

c.0.75

d.1

Answer:b

7.MOSFETswitchinitsonstatemaybeconsideredequivalentto

a.resistor

b.inductor

c.capacitor

d.battery

Answer:c

8.TheeffectivechannellengthofaMOSFETinasaturationdecreaseswithincreasein

a.gatevoltage

b.drainvoltage

c.sourcevoltage

d.bodyvoltage

Answer:b

9.Theearlyeffectinabipolarjunctiontransistoriscausedby

a.Fastturnon

b.Fastturnoff

c.Largecollectorbasereversebias

d.Largeemmiterbaseforwardbias

Answer:c

10.MOSFETcanbeusedasa

a.Currentcontrolledcapacitor

b.Voltagecontrolledcapacitor

c.Currentcontrolledinductor

d.Voltagecontrolledinductors

Answer:b

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