PROFET BTS 712 N1

Smart Four Channel Highside Power Switch

Product Summary
Features Overvoltage Protection Vbb(AZ) 43 V
Overload protection
Current limitation Operating voltage Vbb(on) 5.0 ... 34 V
Short-circuit protection active channels: one two parallel four parallel
Thermal shutdown On-state resistance RON 200 100 50 m
Overvoltage protection Nominal load current IL(NOM) 1.9 2.8 4.4 A
(including load dump) Current limitation IL(SCr) 4 4 4 A
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection

Application
C compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection
functions.

Pin Definitions and Functions

Pin Symbol Function
1,10, Vbb Positive power supply voltage. Design the Pin configuration (top view)
11,12, wiring for the simultaneous max. short circuit
15,16, currents from channel 1 to 4 and also for low Vbb 1 20 Vbb
19,20 thermal resistance GND1/2 2 19 Vbb
3 IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN1 3 18 OUT1
5 IN2 logic high signal ST1/2 4 17 OUT2
7 IN3
IN2 5 16 Vbb
9 IN4
GND3/4 6 15 Vbb
18 OUT1 Output 1 .. 4, protected high-side power output
IN3 7 14 OUT3
17 OUT2 of channel 1 .. 4. Design the wiring for the
ST3/4 8 13 OUT4
14 OUT3 max. short circuit current
IN4 9 12 Vbb
13 OUT4
Vbb 10 11 Vbb
4 ST1/2 Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
8 ST3/4 Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
2 GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2)
6 GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4)

1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group 1 06.96
 BTS 712 N1
Block diagram
Four Channels; Open Load detection in off state;

+ V bb
Current
Leadframe
Voltage Overvoltage Gate 1
source protection limit 1 protection
V Logic

Limit for
Channel 1 OUT1 18
Voltage Level shifter
unclamped
sensor Rectifier 1 Temperature
ind. loads 1
sensor 1
3 IN1
Charge Open load
5 IN2 pump 1 Short to Vbb
ESD Logic
4 ST1/2
detection 1
Charge Gate 2
Current
pump 2 limit 2 protection

Level shifter
Channel 2 OUT2 17
Limit for
2 GND1/2 Rectifier 2 unclamped Load
ind. loads 2 Temperature
sensor 2
Open load
Signal GND Short to Vbb
Chip 1 detection 2
Chip 1 Load GND

+ V bb Leadframe

Channel 3 OUT3 14
Logic and protection circuit of chip 2

(equivalent to chip 1)
7 IN3

9 IN4

8 ST3/4

Channel 4 OUT4 13
Load
6 GND3/4

PROFET
Signal GND
Chip 2 Chip 2 Load GND

Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20

Maximum Ratings at Tj = 25C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection Vbb 34 V
Tj,start = -40 ...+150C

Semiconductor Group 2
 BTS 712 N1
Maximum Ratings at Tj = 25C unless otherwise specified

Parameter Symbol Values Unit

Load current (Short-circuit current, see page 5) IL self-limited A

Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4) 60 V
RI3) = 2 , td = 200 ms; IN = low or high,
each channel loaded with RL = 7.1 ,
Operating temperature range Tj -40 ...+150 C
Storage temperature range Tstg -55 ...+150
Power dissipation (DC)5 Ta = 25C: Ptot 3.6 W
(all channels active) Ta = 85C: 1.9
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150C5),
IL = 1.9 A, ZL = 66 mH, 0 one channel: EAS 150 mJ
IL = 2.8 A, ZL = 66 mH, 0 two parallel channels: 320
IL = 4.4 A, ZL = 66 mH, 0 four parallel channels: 800
see diagrams on page 9
Electrostatic discharge capability (ESD) VESD 1.0 kV
(Human Body Model)
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC) IIN 2.0 mA
Current through status pin (DC) IST 5.0
see internal circuit diagram page 8

Thermal resistance
junction - soldering point5),6) each channel: Rthjs 16 K/W
junction - ambient5) one channel active: Rthja 44
all channels active: 35

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for input
protection is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
6) Soldering point: upper side of solder edge of device pin 15. See page 14
Semiconductor Group 3
 BTS 712 N1
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Load Switching Capabilities and Characteristics

On-state resistance (Vbb to OUT)
IL = 1.8 A each channel, Tj = 25C: RON -- 165 200 m
Tj = 150C: 320 400

two parallel channels, Tj = 25C: 83 100

four parallel channels, Tj = 25C: 42 50
Nominal load current one channel active: IL(NOM) 1.7 1.9 -- A
two parallel channels active: 2.6 2.8
four parallel channels active: 4.1 4.4
Device on PCB , Ta = 85C, Tj 150C
5)

Output current while GND disconnected or pulled IL(GNDhigh) -- -- 10 mA

up; Vbb = 30 V, VIN = 0, see diagram page 9
Turn-on time to 90% VOUT: ton 80 200 400 s
Turn-off time to 10% VOUT: toff 80 200 400
RL = 12 , Tj =-40...+150C
Slew rate on dV/dton 0.1 -- 1 V/s
10 to 30% VOUT, RL = 12 , Tj =-40...+150C:
Slew rate off -dV/dtoff 0.1 -- 1 V/s
70 to 40% VOUT, RL = 12 , Tj =-40...+150C:

Operating Parameters
Operating voltage7) Tj =-40...+150C: Vbb(on) 5.0 -- 34 V
Undervoltage shutdown Tj =-40...+150C: Vbb(under) 3.5 -- 5.0 V
Undervoltage restart Tj =-40...+25C: Vbb(u rst) -- -- 5.0 V
Tj =+150C: 7.0
Undervoltage restart of charge pump Vbb(ucp) -- 5.6 7.0 V
see diagram page 13 Tj =-40...+150C:
Undervoltage hysteresis Vbb(under) -- 0.2 -- V
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150C: Vbb(over) 34 -- 43 V
Overvoltage restart Tj =-40...+150C: Vbb(o rst) 33 -- -- V
Overvoltage hysteresis Tj =-40...+150C: Vbb(over) -- 0.5 -- V
Overvoltage protection 8) Tj =-40...+150C: Vbb(AZ) 42 47 -- V
I bb = 40 mA

7) At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT Vbb - 2 V
8) see also VON(CL) in circuit diagram on page 8.
Semiconductor Group 4
 BTS 712 N1
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max
Standby current, all channels off Tj =25C: Ibb(off) -- 180 300 A
VIN = 0 Tj =150C: -- 160 300
Operating current , VIN = 5V, Tj =-40...+150C
9)

IGND = IGND1/2 + IGND3/4, one channel on: IGND -- 0.35 0.8 mA

four channels on: -- 1.2 2.8

Protection Functions
Initial peak short circuit current limit, (see timing
diagrams, page 11)
each channel, Tj =-40C: IL(SCp) 5.5 9.5 13 A
Tj =25C: 4.5 7.5 11
Tj =+150C: 2.5 4.5 7
two parallel channels twice the current of one channel
four parallel channels four times the current of one channel
Repetitive short circuit current limit,
Tj = Tjt each channel IL(SCr) -- 4 -- A
two parallel channels -- 4 --
four parallel channels -- 4 --
(see timing diagrams, page 11)
Initial short circuit shutdown time Tj,start =-40C: toff(SC) -- 5.5 -- ms
Tj,start = 25C: -- 4 --
(see page 10 and timing diagrams on page 11)
Output clamp (inductive load switch off)10) VON(CL) -- 47 -- V
at VON(CL) = Vbb - VOUT
Thermal overload trip temperature Tjt 150 -- -- C
Thermal hysteresis Tjt -- 10 -- K

Reverse Battery
Reverse battery voltage 11) -Vbb -- -- 32 V
Drain-source diode voltage (Vout > Vbb) -VON -- 610 -- mV
IL = - 1.9 A, Tj = +150C

Diagnostic Characteristics
Open load detection current IL(off) -- 30 -- A
Open load detection voltage Tj =-40..+150C: VOUT(OL) 2 3 4 V

9) Add IST, if IST > 0

10) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
VON(CL)
11) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
Semiconductor Group 5
 BTS 712 N1
Parameter and Conditions, each of the four channels Symbol Values Unit
at Tj = 25 C, Vbb = 12 V unless otherwise specified min typ max

Input and Status Feedback12)

Input resistance RI 2.5 3.5 6 k
(see circuit page 8) Tj =-40..+150C:
Input turn-on threshold voltage VIN(T+) 1.7 -- 3.5 V
Tj =-40..+150C:
Input turn-off threshold voltage VIN(T-) 1.5 -- -- V
Tj =-40..+150C:
Input threshold hysteresis VIN(T) -- 0.5 -- V
Off state input current VIN = 0.4 V: IIN(off) 1 -- 50 A
Tj =-40..+150C:
On state input current VIN = 5 V: IIN(on) 20 50 90 A
Tj =-40..+150C:
Delay time for status with open load td(ST OL3) -- 220 -- s
(see timing diagrams, page 12)
Status output (open drain)
Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) 5.4 6.1 -- V
ST low voltage Tj =-40...+25C, IST = +1.6 mA: VST(low) -- -- 0.4
Tj = +150C, IST = +1.6 mA: -- -- 0.6

12) If ground resistors RGND are used, add the voltage drop across these resistors.

Semiconductor Group 6
 BTS 712 N1

Truth Table
Channel 1 and 2 Chip 1 IN1 IN2 OUT1 OUT2 ST1/2 ST1/2
Channel 3 and 4 Chip 2 IN3 IN4 OUT3 OUT4 ST3/4 ST3/4
(equivalent to channel 1 and 2)
BTS 711L1 BTS 712N1
Normal operation L L L L H H
L H L H H H
H L H L H H
H H H H H H
Open load Channel 1 (3) L L Z L H(L13)) L
L H Z H H H
H X H X L H
Channel 2 (4) L L L Z H(L13)) L
H L H Z H H
X H X H L H
Short circuit to Vbb Channel 1 (3) L L H L L14) L14)
L H H H H H
H X H X H(L15)) H
Channel 2 (4) L L L H L14) L14)
H L H H H H
X H X H H(L15)) H
Overtemperature both channel L L L L H H
X H L L L L
H X L L L L
Channel 1 (3) L X L X H H
H X L X L L
Channel 2 (4) X L X L H H
X H X L L L
Undervoltage/ Overvoltage X X L L H H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal valid after the time delay shown in the timing diagrams

Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4
have to be configured as a 'Wired OR' function with a single pull-up resistor.

Terms

Ibb
V VON3
V Leadframe ON1 Leadframe
bb V V
I IN1 ON2 I IN3 ON4
Vbb Vbb
3 I L1 7 I L3
IN1 18 IN3 14
I IN2 OUT1 I IN4 OUT3
5 9
IN2 PROFET IN4 PROFET
Chip 1 I L2 Chip 2 I L4
I ST1/2 17 I ST3/4 13
OUT2 OUT4
4 8
V ST1/2 GND1/2 V ST3/4 GND3/4
IN1 VIN2 VST1/2 V IN3 VIN4 VST3/4 V
OUT1 OUT3
2 6
I VOUT2 IGND3/4 VOUT4
GND1/2
R R
GND1/2 GND3/4

Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20

External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 or a single resistor RGND = 75 for
reverse battery protection up to the max. operating voltage.

13) With additional external pull up resistor

14) An external short of output to Vbb in the off state causes an internal current from output to ground. If R GND is
used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
15) Low resistance to V may be detected by no-load-detection
bb
Semiconductor Group 7
 BTS 712 N1
Input circuit (ESD protection), IN1...4 Overvoltage protection of logic part
GND1/2 or GND3/4
R + V bb
I
IN

V
RI Z2
ESD-ZD I IN
I
I IN
Logic
GND
ST
R ST

V
ESD zener diodes are not to be used as voltage clamp at Z1

DC conditions. Operation in this mode may result in a drift of GND

the zener voltage (increase of up to 1 V).
R GND

Signal GND
Status output, ST1/2 or ST3/4
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 k typ.,
+5V RGND = 150

R ST(ON)
ST Reverse battery protection
+ 5V - Vbb

ESD-
ZD
GND R ST
RI
IN
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 OUT
ST
at 1.6 mA, ESD zener diodes are not to be used as voltage Power
clamp at DC conditions. Operation in this mode may result in Logic
Inverse
Diode
a drift of the zener voltage (increase of up to 1 V).
GND

RGND RL
Inductive and overvoltage output clamp,
OUT1...4 Signal GND Power GND

+Vbb
RGND = 150 , RI = 3.5 k typ,
Temperature protection is not active during inverse current
VZ
operation.

V ON
Open-load detection, OUT1...4
OUT
OFF-state diagnostic condition:
VOUT > 3 V typ.; IN low
PROFET

Power GND

VON clamped to VON(CL) = 47 V typ.

OFF
I V
L(OL) OUT

Logic Open load

unit detection

Signal GND

Semiconductor Group 8
 BTS 712 N1
GND disconnect Inductive load switch-off energy
(channel 1/2 or 3/4) dissipation
E bb

Ibb E AS
V
bb
Vbb ELoad
IN1 Vbb
OUT1 IN
IN2 PROFET
PROFET OUT
OUT2
ST = L
GND ST EL

V V V
IN1 IN2 ST
V
GND
GND
ZL
{ ER
R
L
Any kind of load. In case of IN = high is VOUT VIN - VIN(T+).
Energy stored in load inductance:
Due to VGND > 0, no VST = low signal available.
2
EL = 1/2LI L
GND disconnect with GND pull up While demagnetizing load inductance, the energy
(channel 1/2 or 3/4) dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)iL(t) dt,
Vbb
IN1 with an approximate solution for RL > 0 :
V OUT1
IN1
PROFET IL L ILRL
IN2 EAS= (V + |VOUT(CL)|)
2RL bb
ln (1+ |V )
V OUT2 OUT(CL)|
IN2
ST GND

Maximum allowable load inductance for

V
ST
V
GND
a single switch off (one channel)5)
V
bb L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0

Any kind of load. If VGND > VIN - VIN(T+) device stays off
L [mH]
Due to VGND > 0, no VST = low signal available. 1000

Vbb disconnect with energized inductive

load

100
Vbb
IN1
OUT1
high
IN2 PROFET
OUT2
ST GND

10

V
bb

For an inductive load current up to the limit defined by EAS

(max. ratings see page 3 and diagram on page 9) each
switch is protected against loss of Vbb. 1
Consider at your PCB layout that in the case of Vbb dis- 1 1.5 2 2.5 3
connection with energized inductive load the whole load
current flows through the GND connection. IL [A]

Semiconductor Group 9
 BTS 712 N1
Typ. on-state resistance Typ. ground pin operating current
RON = f (Vbb,Tj ); IL = 1.8 A, IN = high IGND = f (Vbb,Tj ); VIN = high (one channel on)

RON [mOhm] IGND [mA]

500 1.5

450
1.25
400

350 Tj = 150C
1
300

250 85C 0.75

Tj = -40C
200
25C 25C
0.5
150 85C
-40C 150C
100 0.25

50

0
0
0 10 20 30 40 0 10 20 30 40 50

Vbb [V] Vbb [V]

Typ. standby current Typ. initial short circuit shutdown time

Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1...4 = low toff(SC) = f (Tj,start ); Vbb =12 V

Ibb(off) [A] toff(SC) [msec]

6
250

5
200

150
3

100
2

50
1

0 0
-50 0 50 100 150 200 -50 0 50 100 150 200
Tj [C] Tj,start [C]
Ibb(off) includes four times the current I L(off) of the open
load detection current sources.

Semiconductor Group 10
 BTS 712 N1
Timing diagrams
Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams
are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently
the diagrams are valid for each channel as well as for permuted channels
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load,
IN1

IN
IN2

V bb
ST

V
OUT1 V
OUT

V
OUT2

I
L
ST open drain
t t

Figure 3a: Turn on into short circuit:

Figure 2a: Switching a lamp: shut down by overtemperature, restart by cooling

IN1 other channel: normal operation

IN

ST
I
L1

I
L(SCp)
V
OUT I
L(SCr)

I t
L off(SC)
ST

t t

The initial peak current should be limited by the lamp and not by Heating up of the chip may require several milliseconds, depending
the initial short circuit current IL(SCp) = 7.5 A typ. of the device. on external conditions (toff(SC) vs. Tj,start see page 10)

Semiconductor Group 11
 BTS 712 N1
Figure 3b: Turn on into short circuit: Figure 5a: Open load: detection in OFF-state, turn
shut down by overtemperature, restart by cooling on/off to open load
(two parallel switched channels 1 and 2)

IN1/2 IN1

IN2 channel 2: normal operation

I +I
L1 L2
I L(SCp)

VOUT1

I L(SCr)

I L1

channel 1: open load

t
off(SC)
ST1/2 t
d(ST OL3) t d(ST OL3)
ST
t t

td(ST,OL3) depends on external circuitry because of high

impedance
*) IL = 30 A typ

Figure 4a: Overtemperature:

Reset if Tj <Tjt Figure 6a: Undervoltage:

IN
IN

ST V bb

V Vbb(u cp)
bb(under)
Vbb(u rst)
V
OUT

V OUT

T
J

ST open drain
t

Semiconductor Group 12
 BTS 712 N1
Figure 6b: Undervoltage restart of charge pump

V on VON(CL)
off-state

on-state

off-state
V
bb(over)

V V
bb(u rst) bb(o rst)

V
bb(u cp)

V bb(under)

V bb

IN = high, normal load conditions.

Charge pump starts at Vbb(ucp) = 5.6 V typ.

Figure 7a: Overvoltage:

IN

Vbb V ON(CL) Vbb(over) V bb(o rst)

V
OUT

ST

Semiconductor Group 13
 BTS 712 N1
Package and Ordering Code
Standard P-DSO-20-9 Ordering Code
BTS712N1 Q67060-S7001-A2

All dimensions in millimetres

1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side

Definition of soldering point with temperature Ts:

upper side of solder edge of device pin 15.

Pin 15

Printed circuit board (FR4, 1.5mm thick, one layer

70m, 6cm2 active heatsink area) as a reference for
max. power dissipation Ptot, nominal load current
IL(NOM) and thermal resistance Rthja

Semiconductor Group 14