TCST1103/1202/1300/2103/2202/2300

Vishay Semiconductors

Transmissive Optical Sensor with Phototransistor Output

B) A)
Description
The TCST1103/1202/1300/2103/2202/2300 are
transmissive sensors that include an infrared emitter
and phototransistor, located face-to-face on the opti-
cal axes in a leaded package which blocks visible
Top view
light. These part numbers include options for aperture
+ D
width and mounting flanges.

E +

Features 19180
7.6
0.3
Package type: Leaded
Detector type: Phototransistor
Dimensions package A: e4 Daylight blocking filter
L 11.9 mm x W 6.3 mm x H 10.8 mm Emitter wavelength 950 nm
Dimensions package B: Lead (Pb)-free soldering released
L 24.5 mm x W 6.3 mm x H 10.8 mm Lead (Pb)-free component in accordance to RoHS
Gap: 3.1 mm 2002/95/EC and WEEE 2002/96/EC
Typical output current under test: IC = 4 mA
(TCST1103/2103) Applications
Typical output current under test: IC = 2 mA Optical switch
(TCST1202/2202)
Photo interrupter
Typical output current under test: IC = 0.5 mA
Counter
(TCST1300/2300)
Encoder

Order Instructions
Part Number Remarks Resolution, Aperture Minimum Order Quantity
TCST1103 Without mounting flangeA) 0.6 mm, 1 mm 1020 pcs, 85 pcs/tube

TCST1202 A) 0.4 mm, 0.5 mm 1020 pcs, 85 pcs/tube

Without mounting flange
TCST1300 Without mounting flangeA) 0.2 mm, 0.25 mm 1020 pcs, 85 pcs/tube

TCST2103 With mounting flangeB) 0.6 mm, 1 mm 1020 pcs, 85 pcs/tube

TCST2202 With mounting flangeB) 0.4 mm, 0.5 mm 1020 pcs, 85 pcs/tube

TCST2300 With mounting flangeB) 0.2 mm, 0.25 mm 1020 pcs, 85 pcs/tube

Absolute Maximum Ratings

Tamb = 25 C, unless otherwise specified

Coupler
Parameter Test condition Symbol Value Unit
Total power dissipation Tamb 25 C Ptot 250 mW
Operating temperature range Tamb - 55 to + 85 C
Storage temperature range Tstg - 55 to + 100 C
Soldering temperature Distance to package: 2 mm; t 5 s Tsd 260 C

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Vishay Semiconductors

Input (Emitter)
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp 10 s IFSM 3 A
Power dissipation Tamb 25C PV 100 mW
Junction temperature Tj 100 C

Output (Detector)
Parameter Test condition Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 100 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 200 mA
Power dissipation Tamb 25C PV 150 mW
Junction temperature Tj 100 C

Electrical Characteristics
Tamb = 25 C, unless otherwise specified

Coupler
Parameter Test condition Part Symbol Min Typ. Max Unit
Current Transfer Ratio VCE = 5 V, IF = 20 mA TCST1103, CTR 10 20 %
TCST2103
TCST1202, CTR 5 10 %
TCST2202
TCST1300, CTR 1.25 2.5 %
TCST2300
Collector current VCE = 5 V, IF = 20 mA TCST1103, IC 2 4 mA
TCST2103
TCST1202, IC 1 2 mA
TCST2202
TCST1300, IC 0.25 0.5 mA
TCST2300
Collector emitter saturation IF = 20 mA, IC = 1 mA TCST1103, VCEsat 0.4 V
voltage TCST2103
IF = 20 mA, IC = 0.5 mA TCST1202, VCEsat 0.4 V
TCST2202
IF = 20 mA, IC = 0.1 mA TCST1300, VCEsat 0.4 V
TCST2300
Resolution, path of the shutter ICrel = 10 to 90 % TCST1103, s 0.6 mm
crossing the radiant sensitive TCST2103
zone
TCST1202, s 0.4 mm
TCST2202
TCST1300, s 0.2 mm
TCST2300

Input (Emitter)
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 60 mA VF 1.25 1.6 V
Junction capacitance VR = 0, f = 1 MHz Cj 50 pF

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Vishay Semiconductors

Output (Detector)
Parameter Test condition Symbol Min Typ. Max Unit
Collector emitter voltage IC = 1 mA VCEO 70 V
Emitter collector voltage IE = 10 A VECO 7 V
Collector dark current VCE = 25 V, IF = 0, E = 0 ICEO 100 nA

Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Turn-on time VS = 5 V, IC = 2 mA, RL = 100 ton 10.0 s
(see figure 1)
Turn-off time VS = 5 V, IC = 2 mA, RL = 100 toff 8.0 s
(see figure 1)

IF IF +5V 400
0
IC = 2 mA; adjusted by I F

P - Power Dissipation (mW)

RG = 50 300
Coupled device
tp
=0.01
T
200
t p = 50 s
Phototransistor
Channel I IR - diode
Oscilloscope 100

Channel II R L 1 M
50 100 CL 20 pF
0
95 10890 0 30 60 90 120 150
95 11088 Tamb - Ambient Temperature (C)

Figure 1. Test circuit for ton and toff Figure 3. Power Dissipation Limit vs. Ambient Temperature

IF 96 11698

0
tp t
IC
100 %
90 %

10 %
0
tr
td t
ts tf
ton toff
tp pulse duration ts storage time
td delay time tf fall time
tr rise time toff (= ts + tf) turn-off time
ton (=td+ t r ) turn-on time

Figure 2. Switching Times

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Vishay Semiconductors

Typical Characteristics
Tamb = 25 C, unless otherwise specified

1000 10
VCE = 5 V

I C - Collector Current (mA)

I F - Forward Current (mA)

100 1

10 0.1

1 0.01

0.1 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 V F - Forward Voltage (V) 96 12066 I F - Forward Current (mA)

Figure 4. Forward Current vs. Forward Voltage Figure 7. Collector Current vs. Forward Current

2.0 10
CTR rel - Relative Current Transfer Ratio

I F = 50 mA
VCE = 5 V
I F = 20 mA 20 mA
I C - Collector Current (mA)

1.5
10 mA
1
5 mA
1.0
2 mA
0.1
0.5 1 mA

0 0.01
- 25 0 25 50 75 100 0.1 1 10 100
95 11089 Tamb - Ambient Temperature (C) 96 12067 VCE - Collector Emitter Voltage (V)

Figure 5. Relative Current Transfer Ratio vs. Ambient Figure 8. Collector Current vs. Collector Emitter Voltage
Temperature

10000 100
CTR - Current Transfer Ratio (%)
ICEO - Collector Dark Current (nA)

VCE = 25 V VCE = 5 V
IF = 0
1000
10

100

1
10

1 0.1
0 25 50 75 100 0.1 1 10 100
95 11090 Tamb - Ambient Temperature (C) 96 12068 I F - Forward Current (mA)
Figure 6. Collector Dark Current vs. Ambient Temperature Figure 9. Current Transfer Ratio vs. Forward Current

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Vishay Semiconductors

20 110
0
ton / t off - Turn on/Turn off Time (s)

Non saturated

I Crel - Relative Collector Current

100 A = 0.5 mm
operation 90
15 VS = 5 V
R L = 100 80
70 s
60
10
50

t on 40

5 30
t off 20
10
0 0
0 2 4 6 8 10 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5

95 11086 I C - Collector Current (mA) 96 12006 s - Displacement (mm)

Figure 10. Turn on/off Time vs. Collector Current Figure 12. Relative Collector Current vs. Displacement

110 110
100 0 0
I Crel - Relative Collector Current

A = 1 mm 100

I Crel - Relative Collector Current

A = 0.25 mm
90 90
80 80
70 s 70 s
60 60
50 50
40 40
30 30
20 20
10 10
0 0
- 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5
96 12005 s - Displacement (mm) 96 12007 s - Displacement (mm)

Figure 11. Relative Collector Current vs. Displacement Figure 13. Relative Collector Current vs. Displacement

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Vishay Semiconductors

Package Dimensions in mm

96 12094

96 12095

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Vishay Semiconductors

Tube Dimensions

20252

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Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Vishay

Notice
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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
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Revision: 08-Apr-05 1