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Features
VDSS RDS(on)
Type ID
(@TJmax) max
STW55NM60ND 650 V < 0.060 51 A
Application
Switching applications Figure 1. Internal schematic diagram
Description
This FDmesh II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1 Electrical ratings
2 Electrical characteristics
Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 600 V
breakdown voltage
VDD=480 V, ID= 51 A,
dv/dt (1) Drain source voltage slope 30 V/ns
VGS =10 V
Zero gate voltage VDS = 600 V 10 A
IDSS
drain current (VGS = 0) VDS = 600 V, TC= 125 C 100 A
Gate-body leakage
IGSS VGS = 20 V 100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 3 4 5 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 25.5 A 0.047 0.060
resistance
1. Characteristic value at turn off on inductive load.
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Input capacitance pF
Ciss 5800
Output capacitance VDS = 50 V, f = 1 MHz, pF
Coss 300
Reverse transfer VGS = 0 pF
Crss 30
capacitance
Equivalent output
Coss eq.(2) VGS = 0, VDS = 0 to 480 V 900 pF
capacitance
td(on) Turn-on delay time VDD = 300 V, ID = 25.5 A 33 ns
tr Rise time RG = 4.7 , VGS = 10 V 68 ns
td(off) Turn-off delay time (see Figure 19), 188 ns
tf Fall time (see Figure 14) 96 ns
Qg Total gate charge VDD = 480 V, ID = 51 A, 190 nC
Qgs Gate-source charge VGS = 10 V, 30 nC
Qgd Gate-drain charge (see Figure 15) 90 nC
f=1 MHz Gate DC Bias = 0
Rg Gate input resistance Test signal level = 20 mV 2.5
Open drain
1. Pulsed: pulse duration= 300 s, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
Figure 12. Source-drain diode forward Figure 13. Normalized BVDSS vs temperature
characteristics
3 Test circuits
Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test
switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
P 3.55 3.65
R 4.50 5.50
S 5.30 5.50 5.70
0075325_G
5 Revision history
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