Basic Electronics -15ELN15

Prof. Dr. Noorullah Shariff C.

Semiconductor Diode & Applications, BJT(Unit-1)
S No Question and Answer Marks Mon
th-
year
1 Q. Explain the process of formation of depletion region in
pn junction
A.
To pure semiconductor if trivalent impurity is added it
becomes P-type semiconductor & on the other hand if
pentavalent impurity is added, it becomes a N-type
semiconductor. P-type and N-type are joined to form a PN
junction.
When PN junction is formed majority carriers (holes) from
P-region diffuse into N-region & majority carriers
(electrons) from N- region diffuse into P- region.
This leads to recombination of electrons & holes in
a narrow region on both sides of the junction
resulting in a region devoid of free charge carriers
known as depletion region.
Depletion region leads to uncovered fixed positive
ions on N side & uncovered fixed negative ions on
P side setting up electric field (barrier potential) as
shown in the fig below.
2 Q. Explain the operation of PN junction under forward &
reverse bias
OR
Draw & Explain the V-I characteristic of SI & Ge PN
junction diode
OR
Discuss the behavior of p-n junction under, no bias,
forward bias & reverse bias

A. NO BIAS:
Majority carriers (holes) from P-region diffuse into N-
region & majority carriers (electrons) from N- region
diffuse into P- region.
This leads to recombination of electrons & holes in
a narrow region on both sides of the junction
resulting in a region devoid of free charge carriers
known as depletion region.
Depletion region leads to uncovered fixed positive
ions on N side & uncovered fixed negative ions on
P side setting up electric field (barrier potential) as
shown in the fig below.

FORWARD BIAS:

REVERSE BIAS:

3 Q. Define following diode parameters Knee Voltage,

Maximum forward current, Peak Inverse Voltage( PIV),
Reverse breakdown voltage, Maximum power rating,
dynamic resistance
A.
4 Q. Explain the effect of temperature on diode
charecterstic & power rating of diode
A.

5 Q. Draw the DC Load Line on diode characteristic &

explain
A.

6 Q. For the Circuit Shown in Fig draw the load line & locate
Q pt

A.

7 Q. The incremental change in voltage & current is 0.19V

& 37.6 mA respectively from the forward characteristic of
a diode. Determine the ac resistance of the junction
A.

8 Q. Calculate the reverse saturation current for Si diode

which passes a current of 10 mA at 270C for a forward
bias diode
A.

9 Q. If a Diode with 700mW max power dissipation at 25 0 C

has a 5mW/0C deviating factor. If forward voltage drop
remains constant at 0.7V, calculate the max forward
current at temp 250 C & 650 C.
A.

10 Q. Explain the working of a Half Wave Rectifier

A.
11 Q. What is the need for capacitor filter? For a Half wave rectifier
explain the operation of C filter

12 Q Explain the operation of a Center Tapped Full Wave Rectifier

A.

13 Q. Explain the operation of a Full Wave Bridge Rectifier