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Key Features
600 V 15 A / 20 A / 30 A 3-Phase IGBT Inverter Including Control ICs for Gate
Driving and Protections
Very Low Thermal Resistance by Adopting DBC Substrate
Easy PCB Layout due to Built-in Bootstrap Diodes
Divided Negative DC-Link Terminals for Inverter Three-Leg Current Sensing
Single-Grounded Power Supply due to Built-in HVICs and Bootstrap Operations
Built-in Temperature Sensing Unit of IC
Isolation Rating of 2500 VRMS/min
Schematic
CDCS
HVIC
CBS CBSC DBSZD3 VB
Master
U
Board 3
U
Temp 3
VS V V
Fan Motor
U VDC
2
VIN(H) LPF W
Figure 1.
3 CFOD W
VDD
BLDC Tsu V
Controller 3
VIN(L)
/ MCU 3 5V LVIC
VIN(L)
VSP
RPF
VFO Hall IC
3
3 Signal
Fault
VCCL
NU NV NW
COM CSC
CP15 CP15 DP15
RF
N
www.fairchildsemi.com
2. Schematic
(19) VB(W) P (27)
VB
(18) VCC
VCC
CBS CBSC OUT
COM
(17) IN(WH)
Gating WH IN VS W (26)
(20) VS(W)
(15) VB(V)
VB
(14) VCC
VCC
CBS CBSC OUT
COM
(13) IN(VH)
Gating VH IN VS V (25)
(16) VS(V) Motor
15V line
(11) VB(U)
VB
(10) VCC
VCC CDCS
CBS CBSC OUT
(9) IN(UH) COM
Gating UH IN VS U (24)
(12) VS(U)
5V line RF
(5) IN(WL)
Gating WL IN(WL) OUT(VL)
CBPF CPF (4) IN(VL)
Gating VL IN(VL) NV (22)
(3) IN(UL)
Gating UL IN(UL)
(2) COM
COM
(1) VCC OUT(UL)
VCC Rshunt
VSL NU (21)
CSP15 CSPC15
Figure 2. Schematic of Reference Design for 3-Phase Inverter Part (One Shunt Solution)
POUT =
where:
MI = Modulation Index;
VDC_Link = DC Link Voltage;
IRMS = Maximum load current of inverter; and
PF = Power Factor
Average DC Current
IDC_AVG = VDC_Link / (Pout Eff)
where:
Eff = Inverter Efficiency
The power rating of shunt resistor is calculated by the following equation:
PSHUNT = (I2DC_AVG RSHUNT Margin) / Derating Ratio
where:
Figure 4. Curve of Thermal Sensing Unit (TSU) in 600 V SPM3 ver.5 Series
-
+
be placed to SPM as
NW and shunt resistor close as possible
Z24V +
1.0W
should be as short as - VIN(UH)
possible N VIN(VH)
4. PCB Layout Guidance
VIN(WH)
101
VIN(UL)
101
Connect CSC filters VIN(VL)
CFOD
Figure 5.
101 101
VIN(WL)
capacitor to control
472 101 VFO
GND(not to power GND) TSU
202 101 101
8
+ 5V
U 0 Isolation distance
F
Place sunbber Option +15V
XXX
capacitor between P GND between high voltage
block and low voltage
1.0W
Z24V
and N, and closely to 35V D1
20R
33F
V
terminals BR1 block should be kept
.
EXX
FSBB30CH60D
1.0W
Z24V
20R
33F
W
BR2
diode should be locate
FAIRCHILD
D3
35V
20R
33F
BR3
P
Option resistor (This TB can use all SPM3)
V2 : Open & have to use all component
RE2
RE3
V4 : Open& remove RE1~3, ZD1~3, BR1~3
V5 : O Ohm & remove RE1~3, ZD1~3, BR1~3
& CFOD cap change 1nF(102)
600V SPM3 Design for PCB Layout
5. Related Resources
FSBB30CH60D 600V SPM 3 - Product Folder
AN-9085 600V Motion SPM3 ver.5 Series Application notes
AN-9086 - SPM 3 Series Mounting Guidance
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