Advantages and disadvantages of BJTs and MOSFETs

[Radiation Hardness of 4H-SiC Devices and Circuits]

2.3.1 Effects on BJT
Bipolar devices are attractive components in the design of analog and mixed-
signal integrated circuits [44]. Generally, compared to other device types, BJTs
are considered to be radiation hard and they are used in many space
applications [45]. One Figure of merit to define the performance of a BJT is the
forward current gain (= IC/ IB), defined as the ratio of collector current (IC) to
base current (IB). When the BJTs are exposed to radiation they primarily suffer
from the reduction in due to the degradation of IC and IB. The degradation of
the bipolar currents is a resultant of the reduction in the bulk lifetime due to the
creation of the recombination centers associated with displacement damage
and/or increase in the surface recombination along the emitter base mesa due
to the increase in interface traps as a result of the ionization.
In addition to the above mentioned effects, irradiation of BJTs with neutrons and
ions will result in doping compensation, degradation of the mobility and
increase of leakage currents. Such effects are more pronounced in lowly doped
regions, i.e. the collector and the base regions of a BJT. Generally bipolar
integrated circuits (IC) designed using emitter couple logic (ECL) are considered
to be radiation tolerant among different design types. Bipolar IC designed using
low Schottky power are known to tolerate 1 Mrad(Si) while the ICs designed
using ECL have been reported to tolerate radiation levels reaching 10 Mrad(Si)
[46]
2.3.2 Effects on MOS
Metal oxide semiconductor (MOS) structures are sensitive to ionizing radiation
in a different way than pure semiconductor material, since ionization can induce
static or transient variations in device performance due to degradation in the
insulating dielectric layer and at the dielectric-semiconductor interface.
Typically, when MOS devices are exposed to ionizing radiation they can
generate electron-hole pairs in the dielectric. These effects lead to the creation
of excess traps in the oxide and/or at the interface of dielectric-semiconductor
thereby increasing the surface recombination [47]. Several studies have been
reported on MOSFET threshold voltage shifts, mobility degradation, increase in
gate leakage and gate oxide breakdown instabilities due to radiation induced
increase in the oxide charges and interface traps [48][51]. In this thesis,
radiation effects on MOSFETs are not discussed. Rather the radiation testing has
been confined to MOS capacitor test structures, to investigate the gate oxide
where the predominant degradation happens in the MOSFETs.
[Silicon Carbide Power Devices and Sensors]
The SiC bipolar junction transistor (BJT) is another candidate for a power
switching device. BJTs are gaining more and more interest because of the low
on-state resistance and because they rely on the bipolar pn junction for the
device control resulting in good potential for high temperature operation [3, 4].
However, the bipolar transistor is dependent on a good quality emitter junction
passivation and is vulnerable to degradation of the current gain due to surface
recombination as well as radiation or temperature enhanced charge injection
and trapping in the passivating insulator. It has also temperature dependent
turn-off losses due to the bipolar conductivity modulation and the stored
charge. The SiC BJT is, furthermore, vulnerable to the on-state voltage
degradation caused by crystal basal plane dislocations induced stacking faults.
The degradation process is driven by recombination and thus related entirely to
the bipolar operation [5, 6]. In addition, voltage-controlled devices are often
preferred in applications due to more simple gate driver configuration and
possible integration with IC-based circuitry.

SiC metal oxide semiconductor field effect transistors (MOSFETs) are attractive
as power switches equivalent to Si MOSFETs or insulated gate bipolar transistors
(IGBTs), but suffer from relatively poor channel mobility, gate threshold voltage
instability, and oxide reliability at temperatures over 200 C [2].

[Reliability and Radiation Effects in Compound Semiconductors]

SiC MOSFETs have also been evaluated, using cobalt-60 gamma rays, which is appropriate for those
structures because they use SiO2 as a gate insulator. Figure 10-9 shows how the gate threshold
volateges of p- and n-channel SiC MOSFETs are effected by ionization damage [12]. The gates were
formed using pyrogenic oxdes, with a gate oxide thickness of 33 nm. Initial gate leakage currents
were 0.1 pA or less.
Much larger changes in threshold voltage occured for p-channel devices because of the negatively
charge interface states that are created by the radiation. The interface states partially compensate
the oxide trapped charge for NMOS devices, which is the reason for reduced radiation sensitivity for
that structure. Both types of MOSFETs have smaller radiation-induced changes than conventional
silicon MOSFETs. However, the radiation tests were done with the gates floating, an unusal
condition that will likely reduce hole trapping compared to the case where the gate is biased in a
manner that enhances charge transport towards the SiC/SiO2 interface region.

[GaN and Related Materials II] Google Book

Silicon power MOSFETs unfortunately have a high on-resistance which causes large power loss at
low frequency in high-voltage device operation. The high on-state resistance of SiC MOSFETs limits
their application to below 1000 V at 1 A.
High on-state resistance also limits the operation of the devices at high frequency, say another
word, it reduce the switching frequency of the devices.

The quality of the interface between SiC and the surface passivation layer has a
significant impact on the device performance of 4H-SiC BJTs, especially on the
current gain. This is because the recombination current caused by interface
traps at the extrinsic base surface and along the base-emitter junction sidewall
can be a main component of the base current. Due to the remaining carbon
cluster at the SiO2/SiC interface during the oxidation process, serious
degradation of the dielectric layer quality is observed.
Two possible mechanisms, which may be simultaneously present in the
device, are thought to be responsible: (a) increase in the surface
recombination particularly in the region between the emitter and the base
implant, and (b) bulk recombination in the base due to the generation and
growth of stacking faults. [Degradation of Current Gain in SiC BJTs, 2006]

Current gain degradation has been attributed to increased interface traps or reduced lifetime

in the base-emitter region or small stacking faults in the base-emitter region, while

fluctuations of the knee current might be due to stacking faults in the collector region.

[Current Gain Degradation in 4H-SiC Power BJTs, Materials Science

Forum (Volumes 679-680), 2010, pp. 702-705]