Академический Документы
Профессиональный Документы
Культура Документы
VCC1 ANT_A
50 Ohm
Match
50 Ohm OMN
TXIN Filter
Match LPF
Switch
PD_OUT Power
Control
Detector 50 Ohm
Match
C1
RXOUT 50 Ohm
C2
Match
C3
C4
ANT_B
ANT_A
ANT_B
GND
GND
GND
GND
GND
24 23 22 21 20 19 18
GND 1 17 C4
VCC1 2 16 C3
VCC1 3 15 C2
GND 4 14 C1
GND 5 13 PD_OUT
6 7 8 9 10 11 12
RX_OUT
TXEN
TX_IN
GND
GND
GND
N/C
1 GND Ground
2 VCC1 +3.3 V DC
3 VCC1 +3.3 V DC
4,5 GND Ground
6 TX_IN Transmit Input
7,8,9 GND Ground
10 RX_OUT Receive Output
11 N/C No Connect
12 TXEN Transmit Enable
13 PD_OUT Power Detector
14 C1 Control 1 Input
15 C2 Control 2 Input
16 C3 Control 3 Input
17 C4 Control 4 Input
18 ANT_B Antenna B (50 ohm)
19,20 GND Ground
21 ANT_A Antenna A (50 ohm)
22,23,24 GND Ground
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected
workstations.
DC Electrical Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A60-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max. Unit
Logic Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A60-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
Switch Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A60-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
Control Voltage
VCTL_ON - 3.0 - 3.6 V
(On State)
Control Voltage
VCTL_OFF - 0.0 - 0.2 V
(OFF State)
Low Loss Switch High State = VCTL_ON -
SWON 2.8 - VCC V
Control Voltage VCTL_OFF
High Loss Switch Low State = VCTL_OFF -
SWOFF 0 - 0.3 V
Control Voltage VCTL_OFF
On pin (C1,C2,C3,C4)
Switch Control Bias
ICTL_ON being driven high. RF - - 100 μA
Current (RF Applied)
Applied
Switch Control Bias On pin (C1,C2,C3,C4)
ICTL_ON - - 30 μA
Current (No RF) being driven high. No RF
Control Input
CCTL - - - 100 pF
Capacitance
AC Electrical Characteristics
802.11g Transmit Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A60-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Condition Min. Typ. Max. Unit
Receive Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A60-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Condition Min. Typ. Max. Unit
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A60-EV1 evaluation
board (de-embedded to device), unless otherwise noted.
Symbol Parameter Condition Min. Typ. Max. Unit
0.7
0.6
VDET (V)
0.5
0.4
0.3
0.2
0.1
0
0 2 4 6 8 10 12 14 16 18 20 22
Output Power (dBm)
2400 MHz 2450 MHz 2500 MHz 2.7 V 3.0 V 3.3 V 3.6 V
5
5
4.5
4.5
4 4
3.5 3.5
EVM (%)
3 3
EVM (%)
2.5 2.5
2 2
1.5 1.5
1
1
0.5
0.5
0
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
Output Pow er (dBm ) Output Pow er (dBm )
Figure 4: 802.11g Typical EVM Performance: (a) Over Frequency, (b) Over Voltage
802.11g OFDM ICC vs. Output Pow er over Frequency (25 C, 3.3 V)
2400 MHz 2450 MHz 2500 MHz
220
200
180
ICC (mA)
160
140
120
100
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Output Pow er (dBm )
802.11B ACPR-Adj vs. Output Pow er over Voltage 802.11B ACPR-Alt vs. Output Pow er over Voltage
(25 C, 2450 MHz, 802.11b 11 Mbps Signal) (25 C, 2450 MHz, 802.11b 11Mbps Signal)
2.7 V 3.0 V 3.3 V 3.6 V 2.7 V 3.0 V 3.3 V 3.6 V
-26 -40
-28 -45
-30
-50
ACPR (dBc)
ACPR (dBc)
-32
-55
-34
-60
-36
-38 -65
-40 -70
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27
Output Pow er (dBm ) Output Pow er (dBm )
(a) (b)
Figure 6: 802.11b Typical ACPR Performance (11 Mbps, CCK, BT = 0.45) (a) 802.11b ACPR-ADJ vs. POUT
over Voltage and (b) 802.11b ACPR-ALT vs. POUT over Voltage
-50
-55
-60
-65
-70
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Pow er (dBm )
IMD3, IMD5 vs. Output Pow er (25 C, 2450 MHz, CW) P1dB vs. Frequency (25 C, 3.3 V, CW)
IMD3 IMD5 P1dB Gain
-30 27 33
32
-40 26.5
31
26
P1dB (dBm)
30
Gain (dB)
-50
IMD (dBc)
25.5 29
-60
28
25
27
-70
24.5
26
-80 24 25
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 2400 2420 2440 2460 2480 2500
Output Pow er (dBm ) Frequency (MHz)
(a) (b)
Figure 8: Typical CW Performance (a) IMD3, IMD5 vs. Output Power, (b) P1dB, Gain vs. Frequency
Detector Performance
VDET vs. Output Pow er over Frequency (25 C, 3.3 V, CW) VDET vs. Output Pow er over Voltage (25 C, 2450 MHz, CW)
2400 MHz 2450 MHz 2500 MHz 2.7 V 3.0 V 3.3 V 3.6 V
1 1
0.9
0.9
0.8
0.8
0.7
VDET (V)
0.6 0.7
VDET (V)
0.5 0.6
0.4
0.5
0.3
0.4
0.2
0.3
0.1
0 0.2
2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22
Output Pow er (dBm ) Output Pow er (dBm )
(a) (b)
Figure 9: Typical Power Detector Response: (a) Over Frequency, (b) Over Voltage
4.5 4.5
4 4
EVM (%)
3.5 3.5
EVM (%)
3 3
2.5 2.5
2 2
1.5 1.5
1 1
0.5 0.5
0 0
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
Output Pow er (dBm ) Output Pow er (dBm )
Figure 10: 802.11g Typical EVM Performance: (a) Over Frequency and Temperature, (b) Over Voltage and
Temperature
802.11g OFDM ICC vs. Output Pow er over Frequency, Term perature
(3.3 V)
-40 C, 2400 MHz -40 C, 2450 MHz -40 C, 2500 MHz
25 C, 2400 MHz 25 C, 2450 MHz 25 C, 2500 MHz
85 C, 2400 MHz 85 C, 2450 MHz 85 C, 2500 MHz
220
200
ICC (mA)
180
160
140
120
100
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Output Pow er (dBm )
Figure 11: 802.11g Typical Current Consumption (ICC) Performance over Frequency and Temperature
802.11B ACPR-Adj vs. Output Pow er over Voltage, Tem perature 802.11B ACPR-Alt vs. Output Pow er over Voltage, Tem perature
(2450 MHz, 802.11b 11 Mbps Signal) (2450 MHz, 802.11b 11Mbps Signal)
-40 C, 2.7 V -40 C, 3.0 V -40 C, 3.3 V -40 C, 3.6 V -40 C, 2.7 V -40 C, 3.0 V -40 C, 3.3 V -40 C, 3.6 V
25 C, 2.7 V 25 C, 3.0 V 25 C, 3.3 V 25 C, 3.6 V 25 C, 2.7 V 25 C, 3.0 V 25 C, 3.3 V 25 C, 3.6 V
85 C, 2.7 V 85 C, 3.0 V 85 C, 3.3 V 85 C, 3.6 V 85 C, 2.7 V 85 C, 3.0 V 85 C, 3.3 V 85 C, 3.6 V
-26 -40
-28
-45
ACPR (dBc)
-30
ACPR (dBc)
-50
-32
-55
-34
-60
-36
-38 -65
-40 -70
15 16 17 18 19 20 21 22 23 24 25 15 16 17 18 19 20 21 22 23 24 25
Output Pow er (dBm ) Output Pow er (dBm )
(a) (b)
Figure 12: 802.11b Typical ACPR Performance over Voltage and Temperature (11 Mbps, CCK, BT = 0.45) (a)
802.11b ACPR-ADJ vs. POUT and (b) 802.11b ACPR-ALT vs. POUT
2nd Harm onic vs. Output Pow er over Tem perature 3rd Harm onic vs. Output Pow er over Tem perature
(3.3 V, 2450 MHz, 802.11b 1Mbps CCK Signal) (3.3 V, 2450 MHz, 802.11b 1Mbps CCK Signal)
-40 C 25 C 85 C -40 C 25 C 85 C
-40 -30
-35
Harmonic Power (dBm/1MHz)
-45
Harmonic Power (dBm/1MHz)
-40
-45
-50
-50
-55 -55
-60
-60
-65
-65 -70
-75
-70 -80
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Output Pow er (dBm ) Output Pow er (dBm )
nd
Figure 13: 802.11b Typical Harmonic Performance over Temperature (1 Mbps, CCK) (a) 2 Harmonic (b) 3rd
Harmonic
CW Typical Performance
P1dB vs. Frequency over Tem perature (3.3 V, CW) Sm all Signal Gain vs. Frequency over Tem perature (3.3 V, CW)
-40 C 25 C 85 C -40 C 25 C 85 C
27 33
32
26.5
31
26
P1dB (dBm)
Gain (dBm)
30
25.5 29
28
25
27
24.5
26
24 25
2400 2420 2440 2460 2480 2500 2400 2420 2440 2460 2480 2500
Frequency (MHz) Frequency (MHz)
(a) (b)
Figure 14: Typical CW Performance over Temperature (a) P1dB vs. Frequency, (b) Gain vs. Frequency
IMD3 vs. Output Pow er over Tem perature (2450 MHz, 3.3 V, CW) IMD5 vs. Output Pow er over Tem perature (2450 MHz, 3.3 V, CW)
-40 C, IMD3 25 C, IMD3 85 C, IMD3 -40 C, IMD5 25 C, IMD5 85 C, IMD5
-30 -30
-40 -40
IMD3 (dBc)
IMD (dBc)
-50 -50
-60 -60
-70 -70
-80 -80
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
Output Pow er (dBm ) Output Pow er (dBm )
(a) (b)
Figure 15: Typical CW Performance over Temperature (a) IMD3 vs. Output Power, (b) P1dB vs. Frequency
SE2521A60 Power Detector Response over Temperature and Frequency Pow er Detector Response over Tem perature, Voltage (2450 MHz)
-40C, 2400 MHz -40C, 2450 MHz -40C, 2500 MHz -40 C, 2.7 V -40 C, 3.0 V -40 C, 3.3 V -40 C, 3.6 V
25C, 2400 MHz 25C, 2450 MHz 25C, 2500 MHz 25 C, 2.7 V 25 C, 3.0 V 25 C, 3.3 V 25 C, 3.6 V
85C, 2400 MHz 85C, 2450 MHz 85C, 2500 MHz 85 C, 2.7 V 85 C, 3.0 V 85 C, 3.3 V 85 C, 3.6 V
1
1
0.9
0.9
0.8
0.8
VDET (V)
0.7 0.7
VDET (V)
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
Output Pow er (dBm ) Output Pow er (dBm )
(a) (b)
Figure 16: Typical Power Detector Response: (a) Over Frequency and Temperature, (b) Over Voltage and
Temperature
Package Information
Figure 17 shows the detailed device package diagram. The pads on the SiGe RF modules are plated with gold over
nickel, with a gold thickness of approx. 0.75 to 1.0 um. The modules can be reflowed onto FR4 based material using
eutectic Pb based or common tin based Pb free solder pastes.
5 4 3 2 1
1 2 3 4 5
6 24 24 6
8 22 22 8
GND GND
GND GND
21 9
9 21
GND GND
GND GND
10 20 20 10
GND GND
GND GND
GND GND
11 19 19 11
GND GND GND GND GND
GND GND GND GND GND
12 18 18 12
17 16 15 14 13
13 14 15 16 17
TOP SIDE
GROUND PAD
SIGNAL PAD DETAIL
DETAIL
NOTES :
BOTTOM SIDE
GROUND SIGNAL
PAD DETAIL LAND DETAIL
VIA IN SIGNAL LAND TABLE
PIN NAME DESCRIPTION RECOMMENDED
NOTES :
RECOMMENDED FOOTPRINT
LGA100P800X700-24-610X505
PASTE SCREEN PATTERN
01
Branding Information
The device branding is shown in Figure 19.
Pin 1 Identifier
Terminal Finish
Pin 1
Part Number e4
SiGe
Lot Code
2521A60
Lot Code
Parameter Value
Devices Per Reel 2500
Reel Diameter 13 inches
http://www.sige.com
Email: sales@sige.com
United Kingdom
Phone: +44 1279 464217
Fax: +44 1279 464201
Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Preliminary Information
The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor, Inc.