Академический Документы
Профессиональный Документы
Культура Документы
IRFP250N
HEXFET Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 200V
l 175C Operating Temperature
l Fast Switching RDS(on) = 0.075
l Fully Avalanche Rated G
l Ease of Paralleling ID = 30A
l Simple Drive Requirements S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.7
RCS Case-to-Sink, Flat, Greased Surface 0.24 C/W
RJA Junction-to-Ambient 40
www.irf.com 1
10/09/00
IRFP250N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.075 VGS = 10V, ID = 18A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 17 S VDS = 50V, ID = 18A
25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 160V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 123 ID = 18A
Qgs Gate-to-Source Charge 21 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge 57 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 14 VDD = 100V
tr Rise Time 43 ID = 18A
ns
td(off) Turn-Off Delay Time 41 RG = 3.9
tf Fall Time 33 RD = 5.5, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S
120
(Body Diode) p-n junction diode. S
Notes:
Repetitive rating; pulse width limited by ISD 18A, di/dt 374A/s, VDD V(BR)DSS,
max. junction temperature. (See Fig. 11) TJ 175C
Starting TJ = 25C, L = 1.9mH Pulse width 300s; duty cycle 2%.
RG = 25, IAS = 18A. (See Figure 12)
2 www.irf.com
IRFP250N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
100 5.5V
5.5V
5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V
10
10
4.5V
1 4.5V
1
0.1
3.5
RDS(on) , Drain-to-Source On Resistance
1000 ID = 30A
I D , Drain-to-Source Current (A)
3.0
100
2.5
TJ = 175 C
(Normalized)
2.0
10
1.5
TJ = 25 C
1.0
1
0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C)
www.irf.com 3
IRFP250N
5000 16
VGS = 0V, f = 1 MHZ ID = 18A
V DS= 160V
Ciss = Cgs + Cgd, Cds SHORTED
3000
Ciss
8
2000
Coss
4
1000
Crss
0 0
0 20 40 60 80 100
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
100
TJ = 175 C 100
10us
10
100us
TJ = 25 C
10
1
1ms
TC = 25 C
TJ = 175 C 10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
4 www.irf.com
IRFP250N
RD
35 VDS
35
VGS
30 D.U.T.
30 RG
+
V DD
ID , Drain Current (A)
-
25
ID , Drain Current (A)
25
10V
20 Pulse Width 1 s
20 Duty Factor 0.1 %
15
15 Fig 10a. Switching Time Test Circuit
10
10 VDS
90%
5
5
0
0 25 50 75 100 125 150 175
25 50
TC 75
, Case100 125
Temperature (150
C) 175 10%
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
1
Thermal Response(Z thJC )
D = 0.50
0.20
0.1 0.10
PDM
0.05
t1
0.02 SINGLE PULSE
(THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
www.irf.com 5
IRFP250N
800
RG D .U .T +
- VD D 400
IA S A
20V
tp 0 .0 1
V (B R )D S S
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
50K
12V .2F
QG .3F
10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
6 www.irf.com
IRFP250N
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple 5% ISD
2 0 .30 (.80 0)
1 9 .70 (.77 5) 5.50 (.2 1 7) NOTES:
2X
4.50 (.1 7 7) 1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
1 2 3 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
-C - T O -247-A C .
1 4.8 0 (.5 83 )
4 .3 0 (.1 70 )
1 4.2 0 (.5 59 )
3 .7 0 (.1 45 )
2 .40 (.09 4) LE A D A S S IG N M E N TS
1 .4 0 (.0 56 ) 0 .80 (.03 1)
2 .00 (.07 9) 3 X 1 .0 0 (.0 39 ) 3X 0 .40 (.01 6) 1 - G A TE
2X 2 - D R A IN
0 .2 5 (.0 10 ) M C A S 2.60 (.1 0 2) 3 - SOURCE
5.45 (.2 1 5) 2.20 (.0 8 7) 4 - D R A IN
3 .4 0 (.1 33 )
2X 3 .0 0 (.1 18 )
E XAM P L E : TH IS IS A N IR F P E3 0 A
W ITH A SS E M B L Y P A R T N U M B ER
LOT CODE 3A1Q IN TER N A TIO N A L
R E C T IF IE R IR F P E 3 0
LOGO
3 A 1 Q 9 3 02
A S SE M B L Y D A TE C O D E
LOT CODE (YYW W )
YY = YE A R
W W W EE K
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
8 www.irf.com
This datasheet has been download from:
www.datasheetcatalog.com