Technique for growing Cd-Zn-Te crystal

CN 100412239 C
ABSTRACT translated from Chinese
The present invention pertains to a method of crystal growth technology, mainly used for the
crystal growth CdZnTe ingot. The main technical programs are: the advantages cited by the
selected Jingjing to prepare a certain size range of seed blocks or rods, the seed into the bottom
chamber in a quartz tube, quartz tube into the upper portion of cadmium zinc telluride alloy
ingots , cadmium zinctelluride crystals were grown. The present invention uses proven: the
advantagesof using preset Jingjing lead to the seed to grow
crystals of cadmium zinctelluride single crystal ingot into a crystal rate from an average of 40% to
65%, and the yield from 10% to 20%. Effectively reduce the production cost.
CLAIMS(3) translated from Chinese
A CdZnTe crystal growth method, comprising the step of vacuum packaging, loading
crystal growth furnace, the mobile feed pipe crystal growth, crystal taken out, cut crystal
orientation, test, characterized in that: in accordance with the selected & lt; 110 & gt ;, & lt; 211 &
gt;, & lt; 100 & gt; advantages cited Jingjing to prepare a certain size range of seed blocks or
rods, the seed into the upper portion of the quartz tube bottom chamber (1), a quartz tube
(3) of the loadcadmium zinc telluride alloy ingots (5), cadmium zinc telluride crystals were grown.
2. The cadmium zinc telluride crystal growth method according to claim 1, characterized in that: A
process for preparing a seed is, A, on a size to meet the
requirements of cadmium zinc telluride single crystal, cut a plane, B , grinding and polishing to
light planes, C, X-ray diffraction plane orientation, and identify <110>, <211>, <100>
crystallographic orientation and the desired folder lack plane positional relationships between ^ ,
D, in accordance with the positional relationship between the directional cut the desired
size of the seed blocks, E, depending on the size and tolerance of the quartz tube seed cavity
requirements, milled seed block, F, according to the technical requirements of testing.
3. The cadmium zinc telluride crystal growth method according to claim 1, characterized in that:
The pre-seed cadmium zinc telluride crystalgrowth process for concrete is: G, clean seed pieces,
chemical cleaning agents corrosion, cleaning off the surface of the metal particles seed and other
contaminants, H, the seed (2) into the quartz tube bottom chamber (1), the seed
crystal growth advantage to (4) upwards, seed (2) - about half in a quartz tube bottom chamber
(1) and the other half around the quartz tube (3), I, in a quartz tube (3) insert the ingredients and
synthesize cadmium zinc telluride alloy ingots (5) well, J, for quartz tube (3) vacuum packaging,
K, will be loaded into the crystal growth furnace quartz tube and heated to 110O ~ 1150 C
temperature, L, moving the growing crystal quartz tube, and then cooled to room temperature, M,
remove the crystal, N, directional cut crystal, O, according to the technical requirements for
testing.
DESCRIPTION translated from Chinese
A new cadmium zinc telluride crystal growth technology I. The present invention pertains to a
process for growing crystals. Mainly used for cadmium zinc telluridecrystal ingot growth can also
be used for similar crystal growth. Second, the method Background
Art cadmium zinc telluride crystal growth, the use ofBridgman melt growth technique which is
generally the process (see Figure 1): 1.cadmium zinc telluride ingredients, 2, vacuum packaging,
3, loading the synthesis furnace, and heating, 4, were compounded reaction, 5, after cooling the
reaction generated cadmium zinc telluride alloy, 6, into the crystal growth furnace and heated, 7,
mobile feeding tube grow into crystals, 8, were Remove the crystal after cooling, 9, directional cut
crystal, 10, for testing. However, due to cadmiumzinc telluride inherent physical, chemical and
metallurgical properties, to make the alloy ingot is grown as an entire single crystal is very
difficult, and often consisting of several large single crystal, even in the size would not be
available single crystal block, resulting in lower rates of single crystal to crystal, only about 40%, a
direct impact on the level of yield, the yield is only about 10%, and increases the cost of research
and production. This method of growing a single crystal as the main cause of the low
rate of crystal :( a) is unable to effectively control the nucleation initial crystal growth phase. (Ii) in
many nuclei, it is likely there are several advantages and disadvantages of growing nuclei, with
the growthcontinues, they go hand in hand, resulting in a single crystal composed of a
plurality of sizes, large single crystal to crystal rate. Third, the main task of the present invention
are: based on the growth of cadmium zinc telluride crystal defects, on the basis of existing
Bridgman growth method, make improvements.To find a new growth method to
prepare cadmium zinc telluride crystals, improving the rate of large single crystals of a crystal and
crystal yield fundamentally, effectively reduce production costs. The main aspect of the present
invention is; in accordance with the selected <110>, <211>, <100> or <111> advantages cited
Jingjing to prepare a certain size range of seed blocks or rods, the seed load quartz tube bottom
chamber, the upper portion of the quartz tube into the alloy
ingot cadmium zinc telluride, cadmium zinc telluride crystals were grown. The present invention,
by the use of proven: With pre advantage Jingjing lead to seed technology to grow
crystals of cadmium zinc telluride,cadmium zinc telluride alloy makes monocrystalline ingot into a
crystal rate from 40% to now more than 65%, the yield increased from 10% increased by 20%,
fell dramatically reduce the production cost. Fourth, the drawings illustrating l, the prior art is a
process flow diagram of the present invention. Figure 2 is a pre-prepared seed flow chart of the
present invention. Figure 3 is a flow chart of the present invention. Figure 4 is a schematic
diagram of a preset seed and install quartz tube of the present invention. V. DETAILED
DESCRIPTION OF THE DRAWINGS and embodiments of the present invention will be described
in detail. According to the test analysis showed that cadmiumzinc telluride alloy to improve
monocrystalline ingot into a crystal rate and yield must solve two problems, one must control the
nucleation initial crystal growth phase. 2, you must choose the direction of the lead body having
a growth advantage Jingjing reference to FIG. 4, the main aspect of the present invention is:
according to the selected <110>, <211>, <100> or <111> advantages cited Jingjing to prepare a
certain size range of seed blocks or rods, the seed into the bottom chamber ofthe quartz tube 1,
the upper portion of the quartz tube 3 loaded cadmium zinc telluride alloy ingot
5, cadmium zinc telluridecrystals were grown. Program in the crystal orientation, is a widely
recognized internationally crystal orientation, if a crystal has a direction in which the <110>,
<211>, <100> or <111> is represented by the present invention more The selected trials, the most
effective crystal growth process to the advantage of the growth of crystals. Referring to Figure 2,
the present invention is a process for the preparation of the seed is: A, on a size to meet the
requirements of cadmium zinc telluridesingle crystal, cut a plane. B, grinding and polishing to a
mirror plane ^ fi 'light. C, set the users crystal X-ray diffractometer plane orientation, and identify
the required <110>, <211>, <100> or <111> direction and the angle between the plane positional
relationships. D, in accordance with the positional relationship between the directional cut the
desired size of the seed block. E, according to the dimensions and tolerances quartz tube seed
cavity requirements, milled seed block. F, press the technical requirements for the seed block
comprehensive test. Step A, cut planes, the general inner circle slicer or brushed cutter. Step B,
E, grinding and polishing and grinding the seed block plane, generally with different grit silicon
carbide and diamond grinding wheels. 3, 4, with pre-cited advantages of the invention Jingjing to
seed the growth of crystals ofcadmium zinc telluride specific process approach: G, clean seed
pieces, chemical cleaning agents corrosion, cleansed the seed surface metal particles and other
contaminants. H, the seed block 2 into the quartz tube bottom chamber 1, the seed
crystal growth advantage to 4 up, seed 2 - about half in the bottom chamber of the quartz tube 1,
and the other half around the quartz tube 3. I, loaded in a quartz tube 3 has good ingredients and
synthesize cadmium zinc telluride alloy ingot 5. J, quartz tube vacuum packaging. K, the quartz
tube into the crystal growth furnace and heated to 1100-1150 C temperature.L, moving the
quartz tube to generate crystals, and then cooled to room temperature. M, remove the crystals. N,
directional cut crystal. 0, according to the technical requirements for testing. Step G, clean seed
block, the required materials: pure water, clean fine, toluene, acetone, ethanol and bromine. Step
J, vacuum packaging, the necessary equipment: vacuum unit.Referring to FIG. 3, 4, Step K, L, a
quartz tube into the crystal growth furnace is generated crystals, the crystal growth starts before,
we must ensure that the seed melting section 2, the lower section can not be melted. Referring to
Figure 3, two additional embodiments of the present invention will be described. 1, other
processes and conditions remain unchanged, only the step K, L, and heated to 110 (TC, the
crystal growth, a single crystal grain ratio of 65%, yield 20% .2, other processes and conditions
are not change, only in step K, L, and heated to 1150 C, the growth of crystals, single crystals
into crystal ratio of 66%, the yield of 20% with reference to FIG. 4, the main working
principles of the invention: the use of pre- The advantages cited Jingjing to seed, so that the
crystal growth start to seed the nucleation and crystal growth along the seed to 4 advantage and
eventually grow into a major large single crystal, thereby improving the single crystal a crystal
rate and yield. The present invention is the use of pre-seed Jingjing advantage to lead to
the growth of cadmium zinc telluride crystals. Those who like the technology for growing crystals,
are protected in the column.