PD -91896E

IRF1404
HEXFET Power MOSFET
l Advanced Process Technology
D
l Ultra Low On-Resistance VDSS = 40V
l Dynamic dv/dt Rating
l 175C Operating Temperature
RDS(on) = 0.004
l Fast Switching G
l Fully Avalanche Rated
ID = 162A
S
Description
Seventh Generation HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal TO-220AB
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 162
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 115 A
IDM Pulsed Drain Current 650
PD @TC = 25C Power Dissipation 200 W
Linear Derating Factor 1.3 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 519 mJ
IAR Avalanche Current 95 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range -55 to + 175 C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.75
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

www.irf.com 1
10/20/00
IRF1404
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.036 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.0035 0.004 VGS = 10V, ID = 95A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = 10V, ID = 250A
gfs Forward Transconductance 106 S VDS = 25V, ID = 60A
20 VDS = 40V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 32V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 200 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -200 VGS = -20V
Qg Total Gate Charge 160 200 ID = 95A
Qgs Gate-to-Source Charge 35 nC VDS = 32V
Qgd Gate-to-Drain ("Miller") Charge 42 60 VGS = 10V
td(on) Turn-On Delay Time 17 VDD = 20V
tr Rise Time 140 ID = 95A
ns
td(off) Turn-Off Delay Time 72 RG = 2.5
tf Fall Time 26 RD = 0.21
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 7360 VGS = 0V

Coss Output Capacitance 1680 pF VDS = 25V
Crss Reverse Transfer Capacitance 240 = 1.0MHz, See Fig. 5
Coss Output Capacitance 6630 VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss Output Capacitance 1490 VGS = 0V, VDS = 32V, = 1.0MHz
Coss eff. Effective Output Capacitance 1540 VGS = 0V, VDS = 0V to 32V

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
162
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

650
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 95A, VGS = 0V

trr Reverse Recovery Time 71 110 ns TJ = 25C, IF = 95A
Qrr Reverse RecoveryCharge 180 270 nC di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%.
max. junction temperature. (See fig. 11)
Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25C, L = 0.12mH as Coss while VDS is rising from 0 to 80% VDSS
RG = 25, I AS = 95A. (See Figure 12)
Calculated continuous current based on maximum allowable
ISD 95A, di/dt 150A/s, VDD V(BR)DSS, junction temperature. Package limitation current is 75A
TJ 175C

2 www.irf.com
 IRF1404

1000 1000 VGS

VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100 4.5V
100
4.5V

20s PULSE WIDTH 20s PULSE WIDTH

TJ = 25 C TJ = 175 C
10 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
ID = 159A
RDS(on) , Drain-to-Source On Resistance

TJ = 25 C
I D , Drain-to-Source Current (A)

TJ = 175 C 2.0
(Normalized)

1.5

100

1.0

0.5

V DS = 25V
20s PULSE WIDTH VGS = 10V
10 0.0
4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
www.irf.com 3
 IRF1404

12000 20
VGS = 0V, f = 1MHz ID = 95A
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd

VGS , Gate-to-Source Voltage (V)

VDS = 32V
10000 Coss = Cds + Cgd 16 VDS = 20V
C, Capacitance (pF)

8000 Ciss
12

6000

8
4000
Coss

4
2000

Crss FOR TEST CIRCUIT

SEE FIGURE 13
0 0
1 10 100 0 40 80 120 160 200 240
VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 175 C
1000
I D , Drain Current (A)

100 10us

100 100us

TJ = 25 C
1ms
10

10 10ms

TC = 25 C
TJ = 175 C
V GS = 0 V Single Pulse
1 1
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRF1404

200 RD
VDS
LIMITED BY PACKAGE
VGS
160
D.U.T.
RG
+
I D , Drain Current (A)

-VDD

120 10V
Pulse Width 1 s
Duty Factor 0.1 %

80
Fig 10a. Switching Time Test Circuit

40 VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
Thermal Response (Z thJC )

D = 0.50

0.20

0.1 0.10

P DM
0.05
t1
0.02 t2
SINGLE PULSE
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRF1404

EAS , Single Pulse Avalanche Energy (mJ)

1200
1 5V ID
TOP 39A
1000 67A
VDS L D R IV E R BOTTOM 95A

800
RG D .U .T +
V
- DD
IA S A
600
20V
tp 0 .0 1

400
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp 200

0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature( C)

IAS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 50
V DSav , Avalanche Voltage ( V )

VG 48

Charge 46

Fig 13a. Basic Gate Charge Waveform

Current Regulator 44
Same Type as D.U.T.

50K
.2F
42
12V
.3F

+
V
D.U.T. - DS 40
0 20 40 60 80 100
VGS

3mA
IAV , Avalanche Current ( A)

IG ID
Current Sampling Resistors Fig 12d. Typical Drain-to-Source Voltage
Fig 13b. Gate Charge Test Circuit Vs. Avalanche Current
6 www.irf.com
 IRF1404

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-channel HEXFET Power MOSFETs

www.irf.com 7
IRF1404
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

10 .54 (.4 15) 3 .7 8 (.149 ) -B -

2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

TO-220AB Part Marking Information

E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y A
LOT C ODE 9B1M IN TE R N A TIO N A L PART NU MBER
R E C TIF IE R
IR F 10 1 0
LOGO 9246
9B 1M D A TE C O D E
ASSEMBLY
(Y Y W W )
LOT CO DE
YY = YEAR
W W = W EEK

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
8 www.irf.com