MTP33N10E

Preferred Device

Power MOSFET
33 Amps, 100 Volts
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
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offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly 33 AMPERES
well suited for bridge circuits where diode speed and commutating 100 VOLTS
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
RDS(on) = 60 m
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a NChannel
Discrete Fast Recovery Diode D
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
G
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol Value Unit
S
DrainSource Voltage VDSS 100 Vdc
DrainGate Voltage (RGS = 1.0 M) VDGR 100 Vdc MARKING DIAGRAM
GateSource Voltage & PIN ASSIGNMENT
Continuous VGS 20 Vdc 4
NonRepetitive (tp 10 ms) VGSM 40 Vpk 4 Drain
Drain Current Continuous ID 33 Adc
Drain Current Continuous @ 100C ID 20
Drain Current Single Pulse (tp 10 s) IDM 99 Apk TO220AB
Total Power Dissipation PD 125 Watts CASE 221A
Derate above 25C 1.0 W/C STYLE 5 MTP33N10E
LLYWW
Operating and Storage Temperature Range TJ, Tstg 55 to C
150 1
2 1 3
3
Single Pulse DraintoSource Avalanche EAS 545 mJ Gate Source
Energy Starting TJ = 25C
(VDD = 25 Vdc, VGS = 10 Vdc, 2
IL = 33 Apk, L = 1.000 mH, RG = 25 ) Drain
Thermal Resistance C/W MTP33N10E = Device Code
Junction to Case RJC 1.0 LL = Location Code
Junction to Ambient RJA 62.5 Y = Year
Maximum Lead Temperature for Soldering TL 260 C WW = Work Week
Purposes, 1/8 from case for 10 sec.
ORDERING INFORMATION

Device Package Shipping

MTP33N10E TO220AB 50 Units/Rail

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2004 1 Publication Order Number:

March, 2004 Rev. 4 MTP33N10E/D
 MTP33N10E

ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage V(BR)DSS
(VGS = 0 Vdc, ID = 250 Adc) 100 Vdc
Temperature Coefficient (Positive) 118 mV/C
Zero Gate Voltage Drain Current IDSS Adc
(VDS = 100 Vdc, VGS = 0 Vdc) 10
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 25C) 100
GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS 100 nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage VGS(th)
(VDS = VGS, ID = 250 Adc) 2.0 4.0 Vdc
Temperature Coefficient (Negative) 7.0 mV/C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 16.5 Adc) RDS(on) 0.04 0.06 Ohm
DrainSource OnVoltage (VGS = 10 Vdc) VDS(on) Vdc
(ID = 33 Adc) 1.6 2.4
(ID = 16.5 Adc, TJ = 25C) 2.1
Forward Transconductance (VDS = 8.0 Vdc, ID = 16.5 Adc) gFS 8.0 mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss 1830 2500 pF
Output Capacitance (VDS = 25 Vdc,
Vd VGS = 0 Vdc,
Vd
Coss 678 1200
f = 1.0 MHz)
Reverse Transfer Capacitance Crss 559 1100

SWITCHING CHARACTERISTICS (Note 2.)

TurnOn Delay Time td(on) 18 40 ns
Rise Time (VDD = 50 Vdc, ID = 33 Adc, tr 164 330
VGS = 10 Vdc,
Vdc
TurnOff Delay Time RG = 9.1 ) td(off) 48 100
Fall Time tf 83 170
Gate Charge QT 52 110 nC
(S Figure
(See Fi 8)
(VDS = 80 Vdc, ID = 33 Adc, Q1 12
VGS = 10 Vdc) Q2 32
Q3 24
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1.) (IS = 33 Adc, VGS = 0 Vdc) VSD 1.0 2.0 Vdc
(IS = 33 Adc, VGS = 0 Vdc, TJ = 125C) 0.98
Reverse Recovery Time trr 144 ns
(S Figure
(See Fi 14)
(IS = 33 Adc, VGS = 0 Vdc, ta 108
dIS/dt = 100 A/s) tb 36
Reverse Recovery Stored Charge QRR 0.93 C

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance LD nH
(Measured from contact screw on tab to center of die) 3.5
(Measured from the drain lead 0.25 from package to center of die) 4.5
Internal Source Inductance LS 7.5 nH
(Measured from the source lead 0.25 from package to source bond pad)
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.

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 MTP33N10E

TYPICAL ELECTRICAL CHARACTERISTICS

90 90
TJ = 25C VGS = 10 V VDS 10 V
80 80 TJ = 55C
I D , DRAIN CURRENT (AMPS)

I D , DRAIN CURRENT (AMPS)

70 9V 70
60 60 25C
8V
50 50
100C
40 40
7V
30 30

20 6V 20

10 5V 10
0 0
0 1 2 3 4 5 6 7 8 9 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS, GATETOSOURCE VOLTAGE (VOLTS)

Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics

RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)

RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)

0.09 0.053
VGS = 10 V TJ = 25C
0.08 0.051
TJ = 100C
0.049
0.07
0.047
0.06
0.045 VGS = 10 V
0.05 25C
0.043
0.04
0.041
55C 15 V
0.03 0.039

0.02 0.037
0 6 12 18 24 30 36 42 48 54 60 66 5 11 17 23 29 35 41 47 53 59 65
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 3. OnResistance versus Drain Current Figure 4. OnResistance versus Drain Current
and Temperature and Gate Voltage

2.0 10000
RDS(on) , DRAINTOSOURCE RESISTANCE

VGS = 10 V VGS = 0 V
1.8 ID = 16.5 A

1.6
I DSS , LEAKAGE (nA)

1000 TJ = 125C
(NORMALIZED)

1.4

1.2 100C

100
1.0
25C
0.8

0.6 10
50 25 0 25 50 75 100 125 150 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (C) VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 5. OnResistance Variation with Figure 6. DrainToSource Leakage

Temperature Current versus Voltage

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Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because draingate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
5000
4500
4000
C, CAPACITANCE (pF)
3500
3000
2500
2000
1500
1000
500
0
10
MTP33N10E
POWER MOSFET SWITCHING
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the offstate condition when
calculating td(on) and is read at a voltage corresponding to the
onstate when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
VDS = 0 V VGS = 0 V TJ = 25C
Ciss
Crss
Ciss
Coss
Crss
5 0 5 10 15 20 25
VGS VDS
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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 MTP33N10E

14 140 1000
VGS, GATETOSOURCE VOLTAGE (VOLTS)

VDS , DRAINTOSOURCE VOLTAGE (VOLTS)

VGS VDD = 50 V
12 120 ID = 33 A
QT VGS = 10 V
10 100 TJ = 25C
Q2

t, TIME (ns)
tr
8 Q1 80
100
6 60 tf
ID = 33 A
4 TJ = 25C 40 td(off)

2 Q3 20
VDS td(on)
0 0 10
0 10 20 30 40 50 60 1 10 100
QG, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS)

Figure 8. GateToSource and DrainToSource Figure 9. Resistive Switching Time

Voltage versus Total Charge Variation versus Gate Resistance

DRAINTOSOURCE DIODE CHARACTERISTICS

33
30 VGS = 0 V
27 TJ = 25C
I S , SOURCE CURRENT (AMPS)

24
21
18
15
12
9
6
3
0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1.0 1.05
VSD, SOURCETODRAIN VOLTAGE (VOLTS)

Figure 10. Diode Forward Voltage versus Current

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves define reliable operation, the stored energy from circuit inductance
the maximum simultaneous draintosource voltage and dissipated in the transistor while in avalanche must be less
drain current that a transistor can handle safely when it is than the rated limit and adjusted for operating conditions
forward biased. Curves are based upon maximum peak differing from those specified. Although industry practice is
junction temperature and a case temperature (TC) of 25C. to rate in terms of energy, avalanche energy capability is not
Peak repetitive pulsed power limits are determined by using a constant. The energy rating decreases nonlinearly with an
the thermal response data in conjunction with the procedures increase of peak current in avalanche and peak junction
discussed in AN569, Transient Thermal temperature.
ResistanceGeneral Data and Its Use. Although many EFETs can withstand the stress of
Switching between the offstate and the onstate may draintosource avalanche at currents up to rated pulsed
traverse any load line provided neither rated peak current current (IDM), the energy rating is specified at rated
(IDM) nor rated voltage (VDSS) is exceeded and the continuous current (ID), in accordance with industry
transition time (tr,tf) do not exceed 10 s. In addition the total custom. The energy rating must be derated for temperature
power averaged over a complete switching cycle must not as shown in the accompanying graph (Figure 12). Maximum
exceed (TJ(MAX) TC)/(RJC). energy at currents below rated continuous ID can safely be
A Power MOSFET designated EFET can be safely used assumed to equal the values indicated.
in switching circuits with unclamped inductive loads. For

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 MTP33N10E

SAFE OPERATING AREA

1000 550
VGS = 20 V

EAS, SINGLE PULSE DRAINTOSOURCE

500 ID = 33 A
SINGLE PULSE
450
I D , DRAIN CURRENT (AMPS)

100 TC = 25C

AVALANCHE ENERGY (mJ)

400
350
10 100
s
300
1
ms
250
1.0 10
ms
dc 200
RDS(on) LIMIT 150
0.1 THERMAL LIMIT 100
PACKAGE LIMIT
50
0.01 0
0.1 1.0 10 100 25 50 75 100 125 150
VDS, DRAINTOSOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature

1.0
D = 0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.2

0.1
0.1 P(pk)
RJC(t) = r(t) RJC
D CURVES APPLY FOR POWER
0.05
PULSE TRAIN SHOWN
0.02 t1 READ TIME AT t1
0.01 t2 TJ(pk) TC = P(pk) RJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
1.0E05 1.0E04 1.0E03 1.0E02 1.0E01 1.0E+00 1.0E+01
t, TIME (ms)

Figure 13. Thermal Response

di/dt
IS
trr
ta tb
TIME

tp 0.25 IS

IS

Figure 14. Diode Reverse Recovery Waveform

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 MTP33N10E

PACKAGE DIMENSIONS

TO220 THREELEAD
TO220AB
CASE 221A09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
T PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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 MTP33N10E

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