Maha George Zia

Assistant Professor
Electrical Engineering department
Outlines
Transistor Types: BJT, JFET, and MOSFET
Structures and types of BJT
BJT currents and gains.
DC biasing and operating point of BJT
BJT Circuit Analysis
Transistor saturation
Transistor Types: BJT, JFET, and MOSFET
Bipolar Junction Transistor (BJT)
NPN and PNP
Junction Field Effect Transistor (JFET)
N-channel and P-channel
Metal Oxide Semiconductor FET (MOSFET)
Depletion type (n- and p-channel) and enhancement type (n-
and p-channel)
Structures and types of BJT
The BJT Bipolar transistors consist of two anti-serially
connected pn diodes that have a common p or n region

N P N P N P

Junctions

Mode Emitter base junction Collector base junction Use

Forward active Forward biased Reverse biased Normal Amplifier

Cut off Reverse biased Reverse biased Open switch
Saturation Forward biased Forward biased Closed switch
Reverse active Reverse biased Forward biased Low gain amplifier
 The bipolar transistor is used to amplify and to switch signals
and is usually operated in normal mode (forward region),
meaning that the emitter diode junction (BE diode) is biased in
the forward direction and the collector diode junction (BC
diode) is reverse-biased. Graphical symbols and equivalent
diode circuits are shown below
BJT currents and gains
Applying Kirchhoffs current law to the transistor of following
figure.
IE = IC + IB
Where:
IE is the emitter current
IC is the collector current
IB is the base current
VBE = 0.7 V

The dc current gain of a transistor is the ratio of the dc collector

current (IC) to the dc base current (IB) and is designated dc beta
(DC).

= , and

 Typical values of (DC) range from less than 20 to 200 or
higher.
The ratio of the dc collector current (IC) to the dc emitter
current (IE) is the dc alpha (DC).

=

Typically, values of DC range from 0.95 to 0.99 or greater, but
DC is always less than 1.The reason is that IC is always slightly
less than IE by the amount of IB.

H.W. Determine the dc current gain DC and the emitter

current IE for a transistor where IB = 50 A and IC =3.65
mA.
DC biasing and operating point of BJT
For transistor amplifiers the resulting dc current and voltage
establish an operating point on the characteristics that define
the region that will be employed for amplification of the applied
signal.
Figure below shows a general output device characteristic with
four operating points indicated. The biasing circuit can be
designed to set the device operation at any of these points or
others within the active region

The cutoff region, defined by IB 0 , and the saturation region,

defined by VCE VCEsat.
Various operating
points within the
limits of operation
of a transistor
maximum power
constraint
 If no bias were used, the device would initially be
completely off, resulting in a Q-point at Anamely, zero
current through the device (and zero voltage across it)
For point B, if a signal is applied to the circuit, the device
will vary in current and voltage from operating point,
allowing the device to react to (and possibly amplify) both
the positive and negative excursions of the input signal.
Point C would allow some positive and negative variation
of the output signal, but the peak to- peak value would be
limited by the proximity of VCE
Point D sets the device operating point near the maximum
voltage and power level.
 BJT Circuit Analysis
When a transistor is connected to dc bias voltages, as shown
below for both npn and pnp types, VBB forward-biases the base-
emitter junction, and VCC reverse-biases the base-collector
junction.
Three transistor dc currents and three dc voltages can be
identified.
IB: dc base current
IE: dc emitter current
IC: dc collector current
VBE: dc voltage at base with respect to emitter
VCB: dc voltage at collector with respect to base
VCE: dc voltage at collector with respect to emitter
 VBE = 0.7 V
the voltage across RB is:
VRB = VBB VBE
VRB = IBRB
IBRB = VBB VBE
IB = (VBB VBE) / RB
VCE = VCC VRC
The drop across RC is:
VRC = IC RC
the collector with respect to the emitter:
VCE = VCC - IC RC where IC= DC / IB.
The voltage across the reverse-biased collector-base junction is:
VCB= VCE - VBE

 Q1. Determine IB, IC, IE, VBE, VCE, and VCB in the circuit shown below. The
transistor has a DC = 150
 Q2.Determine the following for the fixed-bias configuration of Fig. (a) IBQ
and ICQ. (b) VCEQ. (c) VB and VC. (d) VBC.

and

with the negative sign revealing that the junction is reversed-

biased, as it should be for linear amplification.
Transistor saturation
For a transistor operating in the saturation region, the
current is a maximum value for the particular design.
Saturation conditions are normally avoided because the
basecollector junction is no longer reverse-biased and the
output amplified signal will be distorted
The current is relatively high and the voltage VCE is
assumed to be zero volts, where:

and