A TECHINICAL SEMINAR

on

NANO RANDOM ACCESS MEMORY

Submitted in partial fulfillment of

the requirements for the award of the degree of

BACHELOR OF TECHNOLOGY
in

Electronics and Communication Engineering

by

Ms.P.ANUSHA (136C1A0473)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

MEDHA INSTITUTE OF SCIENCE AND TECHNOLOGY FOR WOMEN

(Affiliated to JNTUH, Hyderabad)

Khammam-507003(T.S)

(2015 2016)

Medha Institute of Science and Technology for Women

(Affiliated to JNTUH, Hyderabad)

 Khammam-507003(T.S)

CERTIFICATE

This is to certify that mini project NANO RANDOM ACCESS MEMORY is being
submitted for the partial fulfillment of Bachelor of Technology in Electronics and Communication
Engineering from Medha Institute of Science & Technology for Women affiliated to Jawaharlal
Nehru Technological University Hyderabad, is bonafied work done by Ms. P.ANUSHA
(136C1A0473) during the academic year 2015-2016 under our guidance and supervision, and it has
been found worthy of acceptance according to the requirement of the university.

Incharge Head of the

Department

Sri.B.Kantha Rao

External Examiner
 DECLARATION

We hereby submit that the mini project entitled NANO RANDOM ACCESS
MEMORY, in partial fulfillment of requirement for the award of Degree of Bachelor of
Technology in Electronics and Communication Engineering, and this is a record of bonafied work
carried out by us and the results embodied in this Project Report have not been submitted to any other
University or Institute for the award of any other degree.

By

P.ANUSHA
(136C1A0473)
 ACKNOWLEDGEMENT

We would like to express our heartfelt gratitude to our parents without whom we would not
have been privileged to achieve and fulfill our dreams. I am grateful to our principal Dr.M.Murali
who most ably run the institution and has had the major hand in enabling us to do the project.

We profoundly thank Mr.B.Kantha Rao, Head of the Department, Electronics and

Communication Engineering, who have been an excellent guide and also a great source of inspiration
to our work.

We would like to thank our guide Department of Electronics And Communication

Engineering, Medha Institute Of Science and Technology for Women , for her technical guidance,
constant encouragement and support for carrying our project in college.

We would like to express our gratitude to all the people behind the screen who helped us to
transform an idea into a real application.

By

P.ANUSHA (136C1A0473)
 CONTENTS

Page no

Acknowledgement i

List of Figures ii

Abstract iii

CHAPTER 1 INTRODUCTION 1
1.1.RAM(Random Access Memory) 2
1.2 .Types of RAM 2
1.2.1 DRAM 2
1.2.2 SRAM 3
1.3 There are some other types of RAM 3
1.3.1 FPM RAM 3
1.3.2 EDORAM 4
1.3.3 SDRAM 4
1.3.4 DDRRAM 4
1.4 Difference between DDR1,DDR2 & DDR3 types of RAM 5
CHAPTER 2 NANOTECHNOIOGY 6
2.1 Histroy of Nanotechnology 6
2.2 The Motivation 8
2.3 Theory 8
CHAPTER 3 CARBON NANOTUBES 10
3.1 Structure of Carbon nanotubes 11
3.2 Basic Structure 13
3.3 Classification of Carbon nanotubes 14
3.3.1 Single-walled carbon nanotubes(swnts) 15
3.3.2 multi-walled carbon nanotubes(mwnts) 15
3.4 Two major problems have far thwarted attempt shrink metal further 16
CHAPTER 4 NANO RAM 16
4.1 Technology(operation & fabrication) 16
4.2 Design, structure &Description 17
4.3 Fabrication of NRAM 19
CHAPTER 5 ADVANTAGES OF NANO RAM 21
APPLICATIONS 22
CHAPTER 6 CONCLUSION 23
FUTURE SCOPE 24
REFERENCES 25
 LIST OF FIGURES

Figure Name Page.No

1.1 NANO RAM 1

1.2 FPM RAM 3
1.3 EDO RAM 4
1.4 SDRAM 4
1.5 DDRRAM 5
3.1 Structure of CNT 12
3.2 Basic Structure 13
3.3 Classification of CNT 14
4.1 Simple Construction of NRAM Showing its various components 18
4.2 Suspended nanotube switched connection 18
4.3 when reading an OFF state no current flows from the ribbon nanotube
to the electrode 19
4.4 when reading an ON state a current passes from the carbon nanotube
to the electrode 19
4.5 Array of nanotubes 20