07 SChao

Mirror
Coatings for Next Generation Detector
Prof. Shiuh Chao

Member of LSC
Institute of Photonics Technologies (IPT)
National Tsing Hua University (NTHU)
Hsinchu, Taiwan,
R.O.C.
Workshop on Gravitational Wave activities in Taiwan (GWTW)

January 15, 2017 Academia Sinica, Institute of Physics
1
Workshop on Gravitational Wave activities in Taiwan (GWTW) January 15, 2017 Academia Sinica, Institute of Physics
Noise Spectrum
GW150914
Dominant noise sources: Coating and suspension Brownian thermal noise

Quantum noise shot noise
-- radiation pressure noise
Snipview.com
Currently for a-LIGO: Ta2O5-TiO2 mixed film for high index layer, SiO2 film for low
index layer, and Feud silica substrate (34 cm in diameter 20 cm in thickness and 40 Kg )
Ion Beam Sputter (IBS) for a-LIGO Mirror Coatings
http://www.reoinc.com/
Production type IBS at LMA

Two aLIGO mirrors are coated simutaneously with planetary rotation and masking to ensure the
thickness uniformity (all Zernike poly terms <0.5nm was achieved for a-LIGO)
But, need to scale-up to larger area coatings for future detector.

Thermal Noise
Fluctuation-Dissipation Theorem says:
Fluctuation of a system is proportional to its dissipation
Example: Brownian motion, Johnson noise
S ( ) : power spectral density of mirror surface fluctuation

x
! : mechanical susceptibility (strain-stress ratio)
( ) : mechanical loss angle
T : temperature of the system (K)
Thermal noise for mirror:
Reducing thermal noise of the mirrors is therefore to reduce its mechanical loss,
to operate at cryogenic and go for larger beam (i.e. larger mirror) .
Optically, the mirror needs to have excessively low absorption and low scattering
loss to avoid effects such as thermal-lensing and phase disturbance
Mirror Substrate
[1] [1] [1] [1] [1] [2] [3] [3]
aLIGO A+ Voyager CE(pess) CE KAGRA ET-D-HF ET-D-LF
Arm Length [km] 4 4 4 40 40 3 10 10
Mirror Mass [kg] 40 80 160 320 320 30 200 211
Mirror materials Silica Silica Silicon Silica Silicon Sapphire fused silica silicon
Mirror Temp [k] 295 295 123 295 123 20 290 10
Sus Fiber 60cm SiO2 60cm SiO2 60cm Si 1.2m SiO2 1.2m Si Sapphire fused silica silicon
Fiber Type Fiber Fiber Ribbon Fiber Ribbon Fiber Fiber Fiber
Input Power [w] 125 125 300 150 220 75 500 3
Arm Power [kW] 710 1150 3000 1400 2000 810 3M 18k
wavelength [nm] 1064 1064 1550 1064 1550 1064 1064 1550
NN suppresion 1 1 10 10 10 -- -- --
Beam size [cm] 5.5/6.2 5.5/6.2 6.7/7.5 12/12 14/14 -- 7.25 9
SQZ Factor [dB] 0 6 8 10 10 -- -- --
F. C. Length [m] none 16 4000 4000 4000 -- -- --
[1]LIGO
LIGO document LIGO-T15TBI-v1
[2]KAGRA
Study report on KAGRA interferometer observation band, 8th Sep. 2009
http://gwcenter.icrr.u-tokyo.ac.jp/en/researcher/parameter
[3]ET
The Einstein Telescope design study (FP7-Capacities, Grant Agreement 211743) P.243 http://www.et-gw.eu/
Cryogenic loss leak for IBS SiO2 films at different annealing
temperatures.
R. Robie et al., Brief update of crygoenic coating mechanical loss measurements at the University of
Glasgow, LIGO document:LIGO-G1601854 (2016)
Cryogenic loss peak of Ta2O5 and Ta2O5-TiO2 films
I W Martin et al., Comparison of the temperature dependence of the mechanical dissipation in thin films of
Ta2O5 and Ta2O5 doped with TiO2, Class. Quantum Grav. 26 155012 (2009)
Some potential improvement for future coatings
Crystalline coatings -- AlGaAs

Multi-material coatings amorphous silicon
Chemical Vapor Deposition (CVD) Silicon nitride
10
AlGaAs Crystalline Coatings
Need to transfer the coatings to large

area substrate. Currently 100-mm
diameter GaAs on silica
G. D. Cole, W. Zhang, M. J. Martin, J. Ye, and M. Aspelmeyer, Nature Photonics (2013)
G. D. Cole LIGO-G1401152 (2015) 11
Multi-materials coatings
Conventional Ta2O5/SiO2 QW stack

has lower optical loss but higher
mechanical loss than the
amorphous silicon/SiO2 QW stack
Multi-materials QW stack : lower optical loss but higher mechanical loss materials in
the front layers and higher optical loss but lower mechanical loss in the back layers
Jessica Steinlechner, Iain Matin, LIGO-P1500256 12

Chemical Vapor Deposition (CVD) for multi-layer
dielectric mirror coatings
The CVD processes for these
amorphous thin film materials are
well established in IC industry :
a-Si n= 3.56 (= 1550 nm)
absorption range < 700 nm
SiO 2 n= 1.45 (= 1550 nm)

SiNx n= 1.77 ~ 2.28 (= 1550 nm)

QW high and low index
films deposited SiC n= 2.58 (= 1064nm) [1]
alternately in two absorption range < 380 nm
reaction compartments (Eg=3.26 eV) [2]
National Nano Device Lab (NDL) of Taiwan
[1] Singh et al. 1971 - -SiC; n(o) 0.488-1.064 m
LPCVD system [2] TAKU HAMAGUCHIROHM Semiconductor, Santa Clara, CA.
18 silicon wafer process

in IC industry.
Larger than LIGO mirrors.
Large area uniform coating on silicon wafer up to 18 (450mm)
by Chemical Vapor Deposition (CVD) is a common practice in
Taiwans silicon-IC industry
At National Tsing Hua University (NTHU), we are exploring

mirror deposition for GW detector by using CVD method
14
Candidate Silicon IC-Compatible CVD Thin Films
for Optical Application
a-Si SiC SiNx SiO2

Refractive index
3.5[1] 3.2-2.6[11,12] 2.6-1.8[16][30] 1.45[19,20]
@ 1550 nm
Absorption range <700 nm[2] <380 nm [13] <510 nm[17] <200 nm[21]
Youngs modulus
100 ~ 150[3-5] 392 ~ 694[14] 85~210[16] 72~83[20,22-25]
(GPa)
Stress# (MPa) -400 ~ -900[6,7] -160 ~ -510[15] +600 ~ 1200 [16] +60 ~ -257[25]
3.3x10-4 e beam[8] ~2x10-6 high stress [18]

5x10-4 sputter[8] ~3x10-4 stress relief [18] 1.49x10-4
Loss angle at RT --
4x10-4 IBS [31] 7.5x10-5 SiN0.40 @107Hz 1x10-4 IBS [26-28]
9x10-5 IBS [10] 1.4x10-5 SiN0.87 @107Hz[30]
Depends on N-
Depends on H+- concentration
Cryogenic loss
concentration and -- ( Preliminary results will be 5x10-4 @20K[29]
peak
heat treatment[8-10] presented in poster session by
Mr. Kuo)
# - : compressive +: tensile
15
Fabrication of SiN film on Silicon by PECVD
Plasma
Ref : Donald L. Smith, et al. mechanism of SiNx Hy Deposition
from NH3-SiH4 plasma. J.Electrochem. Soc. 137, 614-623(1990)
SiNx Ref : J. N. Chiang, et al Mechanistic Considerations in the

Plasma Deposition of silicon nitride film J. Electrochem.
Soc. 137, 2222-2226.(1990)
Adjusting the ratio of the gas flow rate, the

Deposit on polished surface composition of the SiN film can be changed
With fixed N2 gas flow at 980 sccm, we used 5 recipes with different gas flow rate :
Gas flow rate Composition thickness * Refractive index Youngs Stress Uncoated Coated
SiH4 /NH3(sccm) (nm) @1550nm modulus (GPa) (MPa) cantilever cantilever
frequency frequency
45/15 SiN0.40 159.12.7 2.3000.006 103.75.6 120.215.5 103.42 103.47
38/22 SiN0.49 179.21.4 2.1380.005 107.010.8 143.813.2 107.32 107.38
25/30 SiN0.65 198.50.8 1.9300.002 131.64.8 256.76.6 104.88 105.02
15/45 SiN0.79 204.41.5 1.8160.001 137.79.7 382.221.3 107.37 107.53
8/48 SiN0.87 211.80.1 1.7830.001 137.09.2 412.720.0 106.93 107.5
* Means QW thckness of 1550nm

Extinction coefficient <10 -4@1550nm for all
16
Workshop on Gravitational Wave activities in Taiwan (GWTW) January 15, 2017
LIGO-Gxxxxxx LVC meeting, Stanford University, Aug. 25,2014 Academia Sinica, Institute of Physics
Plasma Enhanced Chemical Vapor Deposition (PECVD)
for multi-layer dielectric mirror coating
Process chamber 1SiNx
Process chamber 2 SiO2
Silicon substrate side view

17
Plasma Enhanced Chemical Vapor Deposition (PECVD)
for multi-layer dielectric mirror coating
Process chamber 1SiNx
Process chamber 2 SiO2
Silicon substrate side view

18
Silicon nitride
500 200
180
400
Young's modulus (GPa)

160
300
stress (MPa)
140
200
120
100
100
0 80
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
SiNx composition x
Refractive index and extinction coefficient Stress and Youngs modulus
10-3
SiO2 (n=1.45)
Coating loss *
10-4 SiN0.40 (n=2.28)

SiN0.87 (n=1.78)
-5
10
room temperature
10-6
0 1000 2000 3000 4000 5000 6000 7000
Frequency (Hz) 19
Cryogenic loss of SiN0.4
4.0x10-4
Bending mode: 671.1 Hz
1874.7 Hz
3.5x10-4 Torsional mode: 1275.8 Hz
3872.3 Hz
3.0x10-4
-4
2.5x10
Coating loss
2.0x10-4
1.5x10-4
1.0x10-4
5.0x10-5
No Cryogenic loss Peak !!
0.0
0 25 50 75 100
Temperature(K)
20
Coating Loss of SiN0.40/SiO2 QW Stacks
Deposited by PECVD
10-3
1 pair
2 pair
3 pair
Coating loss* 4 pair
10-4
Ys t s
coating = (coated substrate )
3Y f t f
10-5
0 1000 2000 3000 4000 5000 6000 7000
Frequency (Hz)
SiN0.40/SiO2 QW pairs deposited by all-CVD process showed room temperature

mechanical loss in 10-5 at 100 Hz, lower than Ta2O5-TiO2/SiO2 in current GW detector.
The coating loss of SiN0.40/SiO2 QW stack does not increase with pair number, indicating
that there is no significant loss in SiN0.40/SiO2 interface.
21
Conclusion
Challenges for coatings of the future detector

low mechanical loss in room temp.
Low mechanical loss in cryogenics
Low optical absorption and scattering
Larger area uniform coatings
22
Thank You For Your Attention
23
References for the table in page 3
[1]B. J. Frey, et al, Temperature-dependent refractive index of silicon and germanium, SPIE Conference Series, vol. 6273, p. 2, June 2006.
[2] G. D. Cody,et al, Disorder and the optical-Absorption Edge of Hydrogenated Amorphous Silicon ,Vol. 47 No.20 PHYS REV. LETT. 16 NOVEMBER (1981)
[3] H.W. Pan, et al, Stress effect on mechanical loss of SiNX and -Si film deposited by PECVD method on silicon cantilever, LVC meeting, Pasadena USA, ,
Mar.17 th ,2015, LIGO- G1500195,
[4] R. Kuschnereit, et al, Mechanical and elastic properties of amorphous hydrogenated silicon films studied by broadband surface acoustic wave spectroscopy Appl. Phys.
A 61,269-276 (1995)
[5] R. B. Wehrspohn et al, Relative importance of the SiSi bond and SiH bond for the stability of amorphous silicon thin film transistors, J. APPLIED PHYSICS VOL 87,
No11, JANUARY (2000)
[6] C. K. Chung, et al Fabrication and characterization of amorphous Si films by PECVD for MEMS, J. Micromech. Microeng. 15 (2005) .
[7] P Danesh, et al, Mechanical stress in thin a-Si:Hfilms, Semicond. Sci. Technol. 15 (2000) 971974.
[8] X. Liu et al, low energy excitations in amorphous films of silicon and germanium, Phys. Rev. B 58, 9067 (1998).
[9] X. Liu, et al, Internal friction of amorphous and nanocrystalline silicon at lowtemperatures, Mater. Sci. Eng. 442, 307 (2006).
[10]P. G. Murray, et al, Ion-beam sputtered amorphous silicon films for cryogenic precision measurementsystems, Phys. Rev. D 92, 062001 (2015)
[11] J Cardenas,et al, Optical nonlinearities in high-confinement silicon carbide waveguides, Optics Letters Vol. 40, No. 17, 2015.
[12] M. A. Nigro et al. Measurement of the IR absorption induced by visible radiation in amorphous silicon and silicon carbide thin films by an in-guide technique, Optical
Materials 30 (2008) 12401243
[13] J. B. CASADY, STATUS OF SILICON CARBIDE (SIC) AS A WlDE-BANDGAP SEMICONDUCTOR FOR HIGH-TEMPERATURE APPLICATIONS: A
REVIEW, Solid-State Electronics Vol. 39, No. I0, pp. 1409-1422, 1996
[14] L. Jiang, et al A review of silicon carbide development in MEMS applications, Int. J. Computational Materials Science and Surface Engineering, Vol. 2, Nos. 3/4, 2009 .
[15] C. K. Chung et al, Global and local residual stress in silicon carbide films produced by plasma-enhanced chemical vapor deposition, Surface & Coatings Technology
200 (2006) 4825 4834
[16] A Stoffel, et al, LPCVDagainst PECVD for micromechanical applications, J. Micromech. Microeng. 6 (1996) 113.
[17] S. V. Deshpande, et al, Opticalproperties of silicon nltride films deposited by hot filamentchemical vapor deposition, J, Appl. Phys. 77 (12), 15 June (1995)
[18] D. R. Southworth , et al. Stress and Silicon Nitride A Crack in the Universal Dissipation of Glasses, PhysRevLett.102.225503(2009)
[19] V.B. Braginsky, et al, Thermodynamical fluctuations in optical mirror coatings, Physics Letters A 312 (2003) 244255
[20]H.W. Pan, et al, Mechanical loss of silica film on silicon cantilever deposited by PECVDmethod, LVC meeting, Pasadena, USA, Mar.17th ,2015, LIGO-G1500194
[21] Y. N. Xu, et al, Electronic structure and optical properties of a and P phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxide, PHYS. REV. B
VOL 51, No. 24 15 JUNE (1995) .
[22] J. Thum,et al, Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films, J. Appli. Phys. 91, 2002,
[23] Z. Cao , Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers, J. Appli. Phys.97, 2005
[24] Y.G. Jung , Evaluation of elastic modulus and hardness of thin films by nanoindentation, J. Mater. Res. 19, 2004,
[25] J. K. Choia ,et al, Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane,Surface and
Coatings Technology 131 2000.
[26]D. R.Crooks, et al, Experimental measurements of mechanical dissipation associated with dielectric coatings formed using SiO2, Ta2O5 and Al2O3Class. Quan. Grav.
23 (2006)4953-4965
[27]S. Penn, Exploring Coating Thermal Noise via Loss in Fused Silica CoatingsProc.Amaldi 2009,LIGO -G0900600
[28]I. Martin, Studies of materials for use in future interferometric gravitational wave detectors,PhDthesis, University of Glasgow, (2009)
[29] M. Principe, Reflective coating optimization for interferometric detectors of gravitational waves,Vol. 23, No. 9 OPTICS EXPRESS, 4 May 2015 p.10938
[30] S. Chao, et al, Room temperature mechanicalloss of high stress silicon nitride film measured by cantilever ring-down method on double-side coated cantilever LVC
meeting, Budapest, Hungary,Sep. 1 st ,2015, LIGO-G1501068
[31] J. Steinlechner, et al, Thermal noise reduction and absorption optimization via multimaterialcoatings, PHYSICAL REVIEW D 91, 042001 (2015)
24
Thermal noise for the mirror
d The thickness of coating

Laser beam waist
The Poisson's ratio of substrate
The Poisson's ratio of coating
Y The Young's modulus of substrate
Y The Young's modulus of coating
Mechanical loss for the coating for strains parallel to the coating surface
Mechanical loss for the coating for strains perpendicular to the coating surface
f Frequency
% Boltzmann constant
T Temperature
Assume Y = Y , = and =
Assume = =0
G M Harryet al., Thermal noise in interferometric gravitational wave detectors due to dielectric optical coatings, Class. Quantum Grav. 19 897917 (2002)
Coating Loss for PECVD SiO2, SiN0.40 and SiN0.87
10-3
SiO2 (n=1.45)
SiN0.40 (n=2.28)
Coating loss *
10-4
SiN0.87 (n=1.78)
-5
10
10-6
0 1000 2000 3000 4000 5000 6000 7000
Frequency (Hz)
We chose SiO2 as the low index layer and SiN0.40 as the high
index layer for quarter-wave (QW) stacks.
* First two modes are bending modes and others are torsional modes. Higher order bending modes are not
shown due to high fluctuation in the clamp loss. 26
SiN0.4/SiO2 QW Stacks
SiN0.40 (n= 2.28)

Stresses are compensated
tensile stress +120MPa

1-pair SiN0.40/SiO2 QW stack 4-pair SiN0.40/SiO2 QW stack
SiO2 (n=1.45)
compressive stress -150MPa
material* Refractive index# Youngs modulus Stress Loss angle ~100Hz @ RT

@1550nm (GPa) (MPa)
SiO2 1.450.01 83.81.3 -158.26.0 (1.490.12) x10-4
SiN0.40 2.280.01 103.75.6 120.215.5 (7.490.72) x10-5
*All films are amorphous structure as deposited
We have deposited samples with 1, 2, 3 and 4 pairs QW stacks.
27
Conventional dielectric multi-layer high reflector coatings
Reflectance of the mirror increases with increasing number of HL pairs

Higher index contrast ---> less number of pairs ---> lower losses
Historical:
Request of mirrors with very low optical loss for high precision ring-laser
gyroscope and high energy lasers back in late 70s led to invention of
applying ion beam sputter to deposit laser mirror at Litton Systems (1979)
Ion beam sputter

nLSiO2 nHTa2O5
with post-deposition annealing
large area coatings for mirrors of laser interference gravitational wave detector in
2000s with low optical loss + low mechanical loss
Ion beam sputter deposition (PVD)
Research IBS at NTHU
Ion source:
-Kaufman type (hot filament)
-RF ion source
-Electron cyclotron resonance (ECR) clean process but expensive
Production type IBS at LMA

Two aLIGO mirrors be coated
simutaneously with planetary
rotation and masking to
ensure the thickness
uniformity (all Zernike poly
terms <0.5nm) (L. Pinard and LMA team, LVC meeting, Pasadena 2015)
Mechanical loss of tantala(un-doped) with heat
treated at 600oC at several frequencies.
I W Martin et al., Effect of heat treatment on mechanical dissipation in Ta2O5 coatings, Class. Quantum
Grav. 27 225020 (2010)
Conventional dielectric multi-layer high reflector coatings
Ion beam sputter

nLSiO2 nHTa2O5
with post-deposition annealing
Higher index contrast->less number

of pairs->lower mechanical loss
Historical:
Request of mirrors with very low optical loss for high precision ring-laser gyroscope back in late 70s
invention of applying ion beam to sputter deposition laser mirror at Litton Systems (1979) very large
area for mirrors of laser gravitational wave detector in 2000s with low optical loss + low mechanical loss
Low optical loss
Low mechanical loss
http://www.aerospaceweb.org/question/weapons/q0187.shtml
http://www.defence-industries.com/company/army/precision-optics-optomechanical-assemblies/wzw-optic
http://www.batop.de/information/r_Bragg.html
http://www.ligo.caltech.edu/LIGO_web/9901news/9901han.html

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Mirror

Coatings for Next Generation Detector

Prof. Shiuh Chao

Workshop on Gravitational Wave activities in Taiwan (GWTW)

Dominant noise sources: Coating and suspension Brownian thermal noise

Production type IBS at LMA

But, need to scale-up to larger area coatings for future detector.

S ( ) : power spectral density of mirror surface fluctuation

Thermal noise for mirror:

Crystalline coatings -- AlGaAs

Need to transfer the coatings to large

Conventional Ta2O5/SiO2 QW stack

Jessica Steinlechner, Iain Matin, LIGO-P1500256 12

SiO 2 n= 1.45 (= 1550 nm)

SiNx n= 1.77 ~ 2.28 (= 1550 nm)

18 silicon wafer process

At National Tsing Hua University (NTHU), we are exploring

a-Si SiC SiNx SiO2

3.3x10-4 e beam[8] ~2x10-6 high stress [18]

SiNx Ref : J. N. Chiang, et al Mechanistic Considerations in the

Adjusting the ratio of the gas flow rate, the

* Means QW thckness of 1550nm

Process chamber 1SiNx

Process chamber 2 SiO2

Silicon substrate side view

Process chamber 1SiNx

Process chamber 2 SiO2

Silicon substrate side view

Young's modulus (GPa)

Refractive index and extinction coefficient Stress and Youngs modulus

10-4 SiN0.40 (n=2.28)

SiN0.40/SiO2 QW pairs deposited by all-CVD process showed room temperature

Challenges for coatings of the future detector

d The thickness of coating

SiN0.40 (n= 2.28)

material* Refractive index# Youngs modulus Stress Loss angle ~100Hz @ RT

*All films are amorphous structure as deposited

We have deposited samples with 1, 2, 3 and 4 pairs QW stacks.

Reflectance of the mirror increases with increasing number of HL pairs

Ion beam sputter

Production type IBS at LMA

Ion beam sputter

Higher index contrast->less number

Low optical loss

Low mechanical loss

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