IPB200N15N3 G IPD200N15N3 G

IPI200N15N3 G IPP200N15N3 G

OptiMOS3 Power-Transistor Product Summary

Features VDS 150 V
N-channel, normal level RDS(on),max 20 mW
Excellent gate charge x R DS(on) product (FOM) ID 50 A
Very low on-resistance R DS(on)

175 C operating temperature

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC1) for target application

Ideal for high-frequency switching and synchronous rectification

Halogen-free according to IEC61249-2-21

Type IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G

Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3

Marking 200N15N 200N15N 200N15N 200N15N

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 C 50 A

T C=100 C 40

Pulsed drain current2) I D,pulse T C=25 C 200

Avalanche energy, single pulse E AS I D=50 A, R GS=25 W 170 mJ

I D=50 A, V DS=120 V,
Reverse diode dv /dt dv /dt di /dt =100 A/s, 6 kV/s
T j,max=175 C

Gate source voltage V GS 20 V

Power dissipation P tot T C=25 C 150 W

Operating and storage temperature T j, T stg -55 ... 175 C

IEC climatic category; DIN IEC 68-1 55/175/56

1)
J-STD20 and JESD22
2)
See figure 3

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Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 1 K/W

Thermal resistance, junction - R thJA minimal footprint - - 75

ambient
6 cm2 cooling area3) - - 50

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 150 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=90 A 2 3 4

V DS=120 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 A
T j=25 C

V DS=120 V, V GS=0 V,
- 10 100
T j=125 C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA

Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 16 20 mW

V GS=8 V, I D=25 A - 16 20

Gate resistance RG - 2.4 - W

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 29 57 - S
I D=50 A

3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.

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Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 1820 - pF

V GS=0 V, V DS=75 V,
Output capacitance C oss - 214 -
f =1 MHz
Reverse transfer capacitance C rss - 5 -

Turn-on delay time t d(on) - 14 21 ns

Rise time tr V DD=75 V, V GS=10 V, - 11 17

Turn-off delay time t d(off) I D=50 A, R G,ext=1.6 W - 23 35

Fall time tf - 6 9

Gate Charge Characteristics4)

Gate to source charge Q gs - 10 14 nC

Gate to drain charge Q gd - 4 6

V DD=75 V, I D=50 A,
Switching charge Q sw - 9 13
V GS=0 to 10 V
Gate charge total Qg - 23 31

Gate plateau voltage V plateau - 5.7 - V

Output charge Q oss V DD=75 V, V GS=0 V - 60 79 nC

Reverse Diode

Diode continous forward current IS - - 50 A

T C=25 C
Diode pulse current I S,pulse - - 220

V GS=0 V, I F=50 A,
Diode forward voltage V SD - 1 1.2 V
T j=25 C

Reverse recovery time t rr V R=75 V, I F=I S, - 106 - ns

Q rr di F/dt =100 A/s

Reverse recovery charge - 332 - nC

4)
See figure 16 for gate charge parameter definition

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1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS10 V

160 60

120

40
Ptot [W]

ID [A]
80

20

40

0 0
0 50 100 150 200 0 50 100 150 200

TC [C] TC [C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 101

1 s

10 s
102
100 s
100
0.5
1 ms
ZthJC [K/W]
ID [A]

101 0.2

10 ms
0.1

DC 10-1 0.05

100 0.02
0.01

single pulse

10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]

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5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C
parameter: V GS parameter: V GS

100 40
7V 6.5 V
10 V
5V 5.5 V 6V
35
8V
80
30

6V 25

RDS(on) [mW]
60
ID [A]

20
8V

40
15 10 V
5.5 V

10
20
5V
5

4.5 V
0 0
0 1 2 3 4 5 0 20 40 60 80
VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C
parameter: T j

100 100

80 80

60 60
gfs [S]
ID [A]

40 40

20 20
175 C

25 C

0 0
0 2 4 6 8 0 40 80 120 160
VGS [V] ID [A]

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9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
parameter: I D

50 4

45
3.5
40
900 A
3
35
90 A
2.5
RDS(on) [mW]

30

VGS(th) [V]
25 98% 2

20 typ
1.5
15
1
10

0.5
5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj [C] Tj [C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 103

Ciss

103

102
25 C
C [pF]

IF [A]

Coss 175 C
102

25C, 98%

101

101
Crss
175C, 98%

100
0 20 40 60 80 100 0 0.5 1 1.5 2

VDS [V] VSD [V]

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13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50A pulsed
parameter: T j(start) parameter: V DD

100 10

120 V
8
75 V
25 C
30 V
100 C
6

VGS [V]
IAS [A]

125 C
10

1 0
1 10 100 1000 0 10 20 30
tAV [s] Qgate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

170
V GS

165 Qg

160
VBR(DSS) [V]

155

150
V gs(th)

145

140 Q g(th) Q sw Q gate

135 Q gs Q gd
-60 -20 20 60 100 140 180

Tj [C]

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PG-TO263-3 Outline

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PG-TO252-3 Outline

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PG-TO262-3 Outline

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PG-TO220-3 Outline

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Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.

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