M. Tech.

2016-17

Subject: - Memory Technologies

Sub Code: - MTVL043

Time: 03 Hours M.M.: 70

Section: A
Q1: Note: Attempt All parts. All parts having equal marks. 7x2=14

a. Draw the typical structure of Six Transistor SRAM Cell.

b. Write four major Differences between NAND and NOR based Flash memories.
c. What SOI technology? Why it is preferred for fabrication of memories?
d. Sketch the cross section of FAMOS? Why it is used in EPROMs?
e. Write Advantages and disadvantage of FRAM.
f. Write any four applications of EPROM /EEPROM.
g. A memory system of size 26K bytes is required to be designed using memory chips
we have 12 address lines and 4 data lines each. How many such chips are required
to design the system?

Section: B
Q2: Note: Attempt any Three parts 7x3=21

a. What are basic circuit elements of BiCMOS technology for SRAM design? How
it is better than bipolar technology also discuss its advantages.
b. What is Masked ROM? Explain a typical mask ROM development flowchart.
c. What is RAM fault modeling? Explain single-stuck fault model in detail.
d. Explain Scan Path testing in detail. What are its advantages?
e. What are general reliability issues in memories? Discuss different Failures
occurred in semiconductor memories.

Section: C
Q3: Note: Attempt All parts 5x7=35

a. What are different types Application-Specific SRAM? Explain architecture of a

dual-port RAM cell in detail.
Or
Discuss the Error Failure in DRAM in detail

b. What is PROM? Explain architecture of NVSRAM Cell in detail.

Or
Discuss the Flash memory architecture using NAND an NOR gate in detail.
c. What is IDDQ Fault Modeling and Testing? Explain in detail.
Or
 Discuss Reliability modelling and failure rate prediction in detail.
d. Discuss the Nonvolatile Memory Reliability issues in detail.

Or

Discuss radiation hardness assurance and testing of memories in detail.

e. What is Magneto resistive Random Access Memory (MRAM) ? Discuss its
architecture and working in detail
Or

Discuss Hybrid 2D and 3D memory architecture.