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AOD409

 
AOD409  

P-Channel Enhancement Mode Field Effect Transistor

General Description

 

Features

The AOD409 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD409 is Pb-free (meets ROHS & Sony 259 specifications). AOD409L is a Green Product ordering option. AOD409 and AOD409L are electrically identical.

V DS (V) = -60V I D = -26A (V GS = -10V) R DS(ON) < 40m(V GS = -10V) @ -20A R DS(ON) < 55m(V GS = -4.5V)

 

TO-252

D-PAK

  Top View Drain Connected to Tab D G S
 

Top View Drain Connected to Tab

D G S
D
G
S

G

D

S

Absolute Maximum Ratings T A =25°C unless otherwise noted

 

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

 

V DS

-60

V

Gate-Source Voltage

 

V GS

±20

V

Continuous Drain

 

T

C =25°C

 

-26

 

Current G

T

C =100°C

I

D

-18

A

Pulsed Drain Current C

 

I DM

-60

Avalanche Current C

 

I AR

-26

A

Repetitive avalanche energy L=0.1mH C

E AR

134

mJ

 

T

C =25°C

P D

60

W

Power Dissipation B

T

C =100°C

30

 

T

A =25°C

P DSM

2.5

 

Power Dissipation A

T

A =70°C

1.6

W

Junction and Storage Temperature Range

T J , T STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient A

t

10s

R

 

16.7

25

°C/W

Maximum Junction-to-Ambient A

Steady-State

θJA

40

50

°C/W

Maximum Junction-to-Case C

Steady-State

R

θJC

1.9

2.5

°C/W

Alpha & Omega Semiconductor, Ltd.

AOD409

Electrical Characteristics (T J =25°C unless otherwise noted)

 

Symbol

Parameter

Conditions

Min

Typ

Max

Units

 

STATIC PARAMETERS

 
 

BV DSS

Drain-Source Breakdown Voltage

I D =-250µA, V GS =0V

-60

   

V

I

 

Zero Gate Voltage Drain Current

V DS =-48V, V GS =0V

 

-0.003

-1

 

DSS

 

T

J =55°C

   

-5

µA

I

GSS

Gate-Body leakage current

V DS =0V, V GS =±20V

   

±100

nA

 

V

GS(th)

Gate Threshold Voltage

V DS =V GS I D =-250µA

-1.2

-1.9

-2.4

V

I

D(ON)

On state drain current

V GS =-10V, V DS =-5V

-60

   

A

     

V GS =-10V, I D =-20A

 

32

40

 

R

DS(ON)

Static Drain-Source On-Resistance

 

T

J =125°C

 

53

 

m

 

V GS =-4.5V, I D =-20A

 

43

55

m

g

FS

Forward Transconductance

V DS =-5V, I D =-20A

 

32

 

S

 

V

SD

Diode Forward Voltage

I S =-1A,V GS =0V

 

-0.73

-1

V

I

S

Maximum Body-Diode Continuous Current

   

-30

A

 

DYNAMIC PARAMETERS

 
 

C

iss

Input Capacitance

   

2977

3600

pF

 

C

oss

Output Capacitance

V GS =0V, V DS =-30V, f=1MHz

 

241

 

pF

 

C

rss

Reverse Transfer Capacitance

 

153

 

pF

 

R

g

Gate resistance

V GS =0V, V DS =0V, f=1MHz

   

2

2.4

 

SWITCHING PARAMETERS

 
 

Q

g (10V)

Total Gate Charge (10V)

   

44

54

nC

 

Q

g (4.5V)

Total Gate Charge (4.5V)

V GS =-10V, V DS =-30V, I D =-20A

 

22.2

28

nC

 

Q

gs

Gate Source Charge

 

9

 

nC

 

Q

gd

Gate Drain Charge

   

10

 

nC

t

D(on)

Turn-On DelayTime

   

12

 

ns

t

r

Turn-On Rise Time

V GS =-10V, V DS =-30V, R L =1.5, R GEN =3

 

14.5

 

ns

t

D(off)

Turn-Off DelayTime

 

38

 

ns

t

f

Turn-Off Fall Time

   

15

 

ns

t

rr

Body Diode Reverse Recovery Time

I F =-20A, dI/dt=100A/µs

   

40

50

ns

 

Q

rr

Body Diode Reverse Recovery Charge

I F =-20A, dI/dt=100A/µs

   

59

 

nC

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

Rev 3: June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 -10V -4.5V -4V 25 -6V -5V 20 15 -3.5V 10 5 V GS =-3V
30
-10V
-4.5V
-4V
25
-6V
-5V
20
15
-3.5V
10
5
V
GS =-3V
0
-I D (A)
30 V DS =-5V 25 20 15 125°C 10 25°C 5 0 -I D (A)
30
V
DS =-5V
25
20
15
125°C
10
25°C
5
0
-I D (A)

012345 012345

-V DS (Volts) Fig 1: On-Region Characteristics

-V GS (Volts) Figure 2: Transfer Characteristics

50 40 V GS =-4.5V 30 V GS =-10V 20 10 0 0 5 10
50
40
V
GS =-4.5V
30
V
GS =-10V
20
10
0
0
5
10
15
20
25
R DS(ON) (m
)Ω
2 V GS =-10V 1.8 I D =-20A 1.6 V GS =-4.5V 1.4 I D
2
V
GS =-10V
1.8
I
D =-20A
1.6
V
GS =-4.5V
1.4
I
D =-20A
1.2
1
0.8
0
25
50
75
100
125
150
175
Normalized On-Resistance
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2

-V SD (Volts) Figure 6: Body-Diode Characteristics

-I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

80 I D =-20A 125°C 60 25°C 40 20 2 4 6 8 10 )Ω
80
I
D =-20A
125°C
60
25°C
40
20
2
4
6
8
10
)Ω
R DS(ON) (m
-I S (A)

-V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 V DS =-30V 8 I D =-20A 6 4 2 0 0 5 10
10
V
DS =-30V
8
I
D =-20A
6
4
2
0
0
5
10
15
20
25
30
35
40
45
50
-V GS (Volts)
4000 3600 C iss 3200 2800 2400 2000 1600 1200 C C oss rss 800
4000
3600
C
iss
3200
2800
2400
2000
1600
1200
C
C
oss
rss
800
400
0
0
5
10
15
20
25
30
Capacitance (pF)

-Q g (nC) Figure 7: Gate-Charge Characteristics

100.0 10µs 100µs R 1ms 10.0 DS(ON) limited 10ms DC 1.0 T J(Max) =175°C, T
100.0
10µs
100µs
R
1ms
10.0
DS(ON)
limited
10ms
DC
1.0
T
J(Max) =175°C,
T
A =25°C
0.1
0.1
1
10
100
-I D (Amps)
Power (W)
-V DS (Volts) Figure 8: Capacitance Characteristics 1000 800 T =175°C J(Max) T A =25°C
-V DS (Volts)
Figure 8: Capacitance Characteristics
1000
800
T
=175°C
J(Max)
T
A =25°C
600
400
200
0
0.0001
0.001
0.01
0.1
1
10

-V DS (Volts)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Case (Note F)

10 D=T on /T In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
D=T on /T
In descending
order
D=0.5, 0.3,
0.1, 0.05,
0.02, 0.01, single
pulse
T
J,PK =T C +P DM .Z θJC .R θJC
R
θJC =2.5°C/W
1
0.1
P
D
T
on
Single
Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Z JCθ
Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 L ⋅ I D t = A BV − V DD 25 20 15
30
L ⋅
I
D
t
=
A
BV − V
DD
25
20
15
T
A =25°C
10
0.00001
0.0001
0.001
-I D (A), Peak Avalanche Current

Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability

30 25 20 15 10 5 0 0 25 50 75 100 125 150 175
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
Current rating -I D (A)

T CASE (°C) Figure 14: Current De-rating (Note B)

70 60 50 40 30 20 10 0 0 25 50 75 100 125 150
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Power Dissipation (W)

T CASE (°C) Figure 13: Power De-rating (Note B)

60 T A =25°C 50 40 30 20 10 0 0.001 0.01 0.1 1 10
60
T
A =25°C
50
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
Power (W)

Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to- Ambient (Note H)

10 D=T on /T In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
D=T on /T
In descending
order
D=0.5, 0.3,
0.1,
0.05, 0.02,
0.01, single
pulse
T
J,PK =T A +P DM .Z θJA .R θJA
R
θJA =50°C/W
1
0.1
P
D
0.01
Single Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Z JAθ
Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.