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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

DESCRIPTION PIN CONFIGURATION (TOP VIEW)


M54583P and M54583FP are eight-circuit collector-current-
M54583P
synchronized Darlington transistor arrays. The circuits are
IN1→ 1 18 →O1
made of PNP and NPN transistors. Both the semiconductor
IN2→ 2 17 →O2
integrated circuits perform high-current driving with ex-
tremely low input-current supply. IN3→ 3 16 →O3

IN4→ 4 15 →O4
INPUT OUTPUT
IN5→ 5 14 →O5

IN6→ 6 13 →O6
FEATURES
IN7→ 7 12 →O7
● High breakdown voltage (BVCEO ≥ 50V)
IN8→ 8 11 →O8
● High-current driving (Ic(max) = 400mA)

● Active L-level input GND 9 10 VCC

● With input clamping diodes Outline 18P4G


● Wide operating temperature range (Ta = –20 to +75°C)

M54583FP
NC 1 20 NC
APPLICATION
IN1→ 2 19 →O1
Interfaces between microcomputers and high-voltage, high-
IN2→ 3 18 →O2
current drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces IN3→ 4 17 →O3

IN4→ 5 16 →O4
INPUT OUTPUT
IN5→ 6 15 →O5

IN6→ 7 14 →O6
FUNCTION
IN7→ 8 13 →O7
The M54583 is produced by adding PNP transistors to
IN8→ 9 12 →O8
M54523 inputs. Eight circuits having active L-level inputs are
GND→ 10 11 VCC
provided.
Resistance of 7kΩ and diode are provided in series between Outline 20P2N-A
each input and PNP transistor base. The input diode is in- NC : No connection
tended to prevent the flow of current from the input to the
V CC. Without this diode, the current flow from “H” input to the
V CC and the “L” input circuits is activated, in such case where
CIRCUIT DIAGRAM (EACH CIRCUIT)
one of the inputs of the 8 circuits is “H” and the others are “L”
to save power consumption. The diode is inserted to prevent VCC
such misoperation.
7k
This device is most suitable for a driver using NMOS IC out-
INPUT 2.7k OUTPUT
put especially for the driver of current sink. 7k

Collector current is 400mA maximum. Collector-emitter sup-


7.2k
ply voltage is 50V.
The 54583FP is enclosed in a molded small flat package, GND
3k
enabling space saving design.

The eight circuits share the VCC and GND.


The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω

Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol Parameter Conditions Ratings Unit


VCC Supply voltage 10 V
VCEO Collector-emitter voltage Output, H –0.5 ~ +50 V
VI Input voltage –0.5 ~ VCC V
IC Collector current Current per circuit output, L 400 mA
Pd Power dissipation Ta = 25°C, when mounted on board 1.79/1.1 W
Topr Operating temperature –20 ~ +75 °C
Tstg Storage temperature –55 ~ +125 °C

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)


Limits
Symbol Parameter Unit
min typ max
VCC Supply voltage 4 5 8 V
VCC = 5V, Duty Cycle
P : no more than 10% 0 — 350
Collector current FP : no more than 5% mA
IC
Per channel VCC = 5V, Duty Cycle
P : no more than 34% 0 — 200
FP : no more than 15%
VIH “H” input voltage VCC –0.7 — VCC V
VIL “L” input voltage 0 — VCC–3.6 V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Limits
Symbol Parameter Test conditions Unit
min typ+ max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA, V CC = 8V 50 — — V
IC = 350mA — 1.1 2.2
VCE (sat) Collector-emitter saturation voltage VI = VCC–3.6V V
IC = 200mA — 0.98 1.6
II Input current VI = VCC–3.6V — –320 –600 µA
ICC Supply current (one circuit coming on) VCC = 5V, VI = VCC–3.6V — — 3 mA
h FE DC amplification factor VCE = 4V, VCC = 5V, I C = 350mA, Ta = 25°C 2000 10000 — —
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)


Limits
Symbol Parameter Test conditions Unit
min typ max
ton Turn-on time — 130 — ns
CL = 15pF (note 1)
toff Turn-off time — 3200 — ns

NOTE 1 TEST CIRCUIT TIMING DIAGRAM

INPUT VCC VO
INPUT
Measured
50% 50%
device
RL

PG OUTPUT
OUTPUT
50Ω CL 50% 50%

ton toff

(1) Pulse generator (PG) characteristics : PRR = 1kHz,


tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0.4 to 4V
(2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes

Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

TYPICAL CHARACTERISTICS

Output Saturation Voltage


Thermal Derating Factor Characteristics Collector Current Characteristics
2.0 500
M54583P
Power dissipation Pd (W)

400

Collector current Ic (mA)


1.5

M54583FP 300
1.0
200
VI = 1.4V
VCC= 5V
0.5 Ta = 75°C
100 Ta = 25°C
Ta = –20°C

0 0
0 25 50 75 100 0 0.5 1.0 1.5 2.0

Ambient temperature Ta (°C) Output saturation voltage VCE (sat) (V)

Duty-Cycle-Collector Characteristics Duty-Cycle-Collector Characteristics


(M54583P) (M54583P)
500 500

400 1 400 1
Collector current Ic (mA)

Collector current Ic (mA)

300 3 300
2
4
5 3
200 6 200
•The collector current values 7 4
represent the current per circuit. 8 •The collector current values 5
•Repeated frequency ≥ 10Hz represent the current per circuit. 76
100 •The value in the circle represents the 100 •Repeated frequency ≥ 10Hz 8
value of the simultaneously-operated circuit. •The value in the circle represents the
•VCC = 5V value of the simultaneously-operated circuit.
•Ta = 25°C •VCC = 5V •Ta = 75°C
0 0
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Duty-Cycle-Collector Characteristics Duty-Cycle-Collector Characteristics


(M54583FP) (M54583FP)
500 500

400 1 400
Collector current Ic (mA)

Collector current Ic (mA)

300 300 1
2

200 3 200 2
4
•The collector current values 5 3
100 represent the current per circuit. 6 100 •The collector current values 4
•Repeated frequency ≥ 10Hz represent the current per circuit. 5
•The value in the circle represents the 7 •Repeated frequency ≥ 10Hz 6
value of the simultaneously-operated circuit. 8 •The value in the circle represents the •Vcc =5.0V
7
•VCC = 5V •Ta = 25°C value of the simultaneously-operated circuit. •Ta = 75°C
0 0 8
0 20 40 60 80 100 0 20 40 60 80 100

Duty cycle (%) Duty cycle (%)

Aug.1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54583P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

DC Amplification Factor
Input Characteristics Collector Current Characteristics
–1.0 104
7
5

DC amplification factor hFE


–0.8
Input current II (mA)

VCC = 5V 3
Ta = 75°C
Ta = 25°C 2
–0.6 Ta = –20°C
103
–0.4 7 VCC = 4V
5 VCE = 4V
Ta = 75°C
3 Ta = 25°C
–0.2 Ta = –20°C
2

0 102 1
0 1 2 3 4 5 10 2 3 5 7 102 2 3 5 7 103

Supply voltage-Input voltage VCC–VI (V) Collector current Ic (mA)

Grounded Emitter Transfer Characteristics Supply Current Characteristics


400 5
VCC = 4V
VI = 0V
VCE = 4V Ta = 75°C
4
Collector current Ic (mA)

Ta = 75°C
Supply current Icc (mA)

Ta = 25°C
300 Ta = 25°C
Ta = –20°C
Ta = –20°C

3
200
2

100
1

0 0
0 1.0 2.0 3.0 4.0 0 2 4 6 8 10

Supply voltage-Input voltage VCC–VI (V) Supply voltage VCC (V)

Aug.1999