SiHW33N60E

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Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
Low figure-of-merit (FOM): Ron x Qg
VDS (V) at TJ max. 650
RDS(on) max. () at 25 C VGS = 10 V 0.099 Low input capacitance (Ciss)
Qg max. (nC) 150 Reduced switching and conduction losses
Qgs (nC) 24 Ultra low gate charge (Qg)
Qgd (nC) 42 Avalanche energy rated (UIS)
Configuration Single Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
TO-247AD APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
G Power factor correction power supplies (PFC)
Lighting
G - High-intensity discharge (HID)
D
S S - Fluorescent ballast lighting
N-Channel MOSFET Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)

ORDERING INFORMATION
Package TO-247AD
Lead (Pb)-free and Halogen-free SiHW33N60E-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600
V
Gate-Source Voltage VGS 30
TC = 25 C 33
Continuous Drain Current (TJ = 150 C) VGS at 10 V ID
TC = 100 C 21 A
Pulsed Drain Current a IDM 88
Linear Derating Factor 2.2 W/C
Single Pulse Avalanche Energy b EAS 793 mJ
Maximum Power Dissipation PD 278 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 C
Drain-Source Voltage Slope VDS = 0 V to 80 % VDS 70
dV/dt V/ns
Reverse Diode dV/dt d 12
Soldering Recommendations (Peak temperature) c for 10 s 300 C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 C, L = 28.2 mH, Rg = 25 , IAS = 7.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/s, starting TJ = 25 C.

S16-0799-Rev. E, 02-May-16 1 Document Number: 91527

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 40
C/W
Maximum Junction-to-Case (Drain) RthJC - 0.45

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 600 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA - 0.71 - V/C
Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V
VGS = 20 V - - 100 nA
Gate-Source Leakage IGSS
VGS = 30 V - - 1 A
VDS = 600 V, VGS = 0 V - - 1
Zero Gate Voltage Drain Current IDSS A
VDS = 480 V, VGS = 0 V, TJ = 125 C - - 10
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 16.5 A - 0.083 0.099
Forward Transconductance a gfs VDS = 30 V, ID = 16.5 A - 11 - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 3508 -
Output Capacitance Coss VDS = 100 V, - 156 -
Reverse Transfer Capacitance Crss f = 1 MHz - 6 -
Effective Output Capacitance, Energy pF
Co(er) - 136 -
Related b
VGS = 0 V, VDS = 0 V to 480 V
Effective Output Capacitance, Time
Co(tr) - 468 -
Related c
Total Gate Charge Qg - 100 150
Gate-Source Charge Qgs VGS = 10 V ID = 16.5 A, VDS = 480 V - 24 - nC
Gate-Drain Charge Qgd - 42 -
Turn-On Delay Time td(on) - 28 56
Rise Time tr VDD = 480 V, ID = 16.5 A - 60 90
ns
Turn-Off Delay Time td(off) Rg = 9.1 , VGS = 10 V - 99 150
Fall Time tf - 54 80
Gate Input Resistance Rg f = 1 MHz, open drain 0.2 0.7 1.0
Drain-Source Body Diode Characteristics
MOSFET symbol D
Continuous Source-Drain Diode Current IS - - 33
showing the
G A
integral reverse
Pulsed Diode Forward Current ISM S - - 88
p - n junction diode
Diode Forward Voltage VSD TJ = 25 C, IS = 16.5 A, VGS = 0 V - 0.9 1.2 V
Reverse Recovery Time trr - 503 1006 ns
TJ = 25 C, IF = IS,
Reverse Recovery Charge Qrr - 8.5 17 C
dI/dt = 100 A/s, VR = 20 V
Reverse Recovery Current IRRM - 26 - A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
c. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

S16-0799-Rev. E, 02-May-16 2 Document Number: 91527

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
120 3.0
TOP 15 V
14 V
ID = 16.5 A
TJ = 25 C
13 V
100 12 V 2.5
11 V
10 V

RDS(on) - On-Resistance
ID - Drain Current (A)

9.0 V 2.0
80 8.0 V

(Normalized)
7.0 V
BOTTOM 6.0 V
60 1.5

40 1.0

20 0.5
VGS = 10 V
5.0 V
0 0.0

0 5 10 15 20 25 30 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (C)

Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature

70 100 000
TOP 15 V VGS = 0 V, f = 1 MHz
14 V TJ = 150 C Ciss = Cgs + Cgd x Cds shorted
13 V
60 Crss = Cgd
12 V
11 V 10 000 Ciss Coss = Cds + Cgd
ID - Drain Current (A)

10 V
C - Capacitance (pF)

50
9.0 V
8.0 V
1000
40 7.0 V
BOTTOM 6.0 V

Coss
30 100

20
10
10 Crss

5.0 V
1
0
0 5 10 15 20 25 30 0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

120 25

5000
100
20
ID, Drain-to-Source Current (A)

80
15
Coss (pF)

Eoss (J)

Coss Eoss
60
500
10
40
TJ = 150 C
5
20
TJ = 25 C

0 50 0
0 5 10 15 20 25 0 100 200 300 400 500 600
VDS
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - COSS and EOSS vs. VDS

S16-0799-Rev. E, 02-May-16 3 Document Number: 91527

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SiHW33N60E
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Vishay Siliconix

24 35

VDS = 300 V
20 30
VGS - Gate-to-Source Voltage (V)

VDS = 120 V
25

ID, Drain Current (A)

16

VDS = 480 V 20
12
15

8
10

4
5

0 0
0 40 80 120 160 200 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TC - Temperature (C)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature

1000 750

VDS , Drain -to -Source Breakdown

725
100 TJ = 150 C
700
IS - Source Current (A)

10
Voltage (V)

675
TJ = 25 C

650
1

625
0.1
600

VGS = 0 V
0.01 575
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160
VSD - Source-to-Drain Voltage (V) TJ,Temperature (C)

Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature

1000

Operation in this area limited

by RDS(on)* IDM Limited
100
ID, Drain Current (A)

10 Limited by RD (on) * 100 s

1 ms
1
TC = 25 C 10 ms
TJ = 150 C
Single Pulse
BVDSS Limited
0.1
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area

S16-0799-Rev. E, 02-May-16 4 Document Number: 91527

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 0.1

0.05

0.02

Single Pulse
0.01
0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case

RD VDS
VDS
tp
VGS VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width 1 s
Duty factor 0.1 %
IAS

Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms

VDS
QG
90 % 10 V

QGS QGD

10 % VG
VGS
td(on) tr td(off) tf

Charge
Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform

Current regulator
Same type as D.U.T.
L
VDS
50 k
Vary tp to obtain
required IAS 12 V 0.2 F
0.3 F

RG D.U.T + +
V DD VDS
D.U.T. -
-
IAS
VGS
10 V
tp 0.01 3 mA

IG ID
Current sampling resistors
Fig. 15 - Unclamped Inductive Test Circuit Fig. 18 - Gate Charge Test Circuit

S16-0799-Rev. E, 02-May-16 5 Document Number: 91527

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SiHW33N60E
www.vishay.com
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-

- +
-

Rg dV/dt controlled by Rg +
Driver same type as D.U.T. VDD
-
ISD controlled by duty factor D
D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 19 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91527.

S16-0799-Rev. E, 02-May-16 6 Document Number: 91527

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-247AD (High Voltage)

A
E A2

D
D1
p

A1
b2
L1 1

L 2
b4
3

(e) c b

MILLIMETERS INCHES
DIM.
MIN. MAX. MIN. MAX.
A 4.70 5.31 0.185 0.209
A1 2.21 2.59 0.087 0.102
A2 1.50 2.49 0.059 0.098
b 0.99 1.40 0.039 0.055
b2 1.65 2.41 0.065 0.095
b4 2.59 3.43 0.102 0.135
c 0.61 BSC 0.024 BSC
D 20.80 21.46 0.819 0.845
D1 3.68 5.49 0.145 0.216
(e) 5.46 BSC 0.215 BSC
E 15.49 16.26 0.610 0.640
L 19.81 20.32 0.780 0.800
L1 4.06 4.50 0.160 0.177
p 3.51 3.66 0.138 0.144
ECN: S17-0178-Rev. B, 06-Feb-17
DWG: 6010

Revision: 06-Feb-17 1 Document Number: 91528

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17 1 Document Number: 91000