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FQP30N06

QFET TM

FQP30N06
60V N-Channel MOSFET

General Description Features


These N-Channel enhancement mode power field effect 30A, 60V, RDS(on) = 0.04 @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)
planar stripe, DMOS technology. Low Crss ( typical 40 pF)
This advanced technology has been especially tailored to Fast switching
minimize on-state resistance, provide superior switching 100% avalanche tested
performance, and withstand high energy pulse in the Improved dv/dt capability
avalanche and commutation mode. These devices are well 175C maximum junction temperature rating
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.

D
!

"

! " "
G! "

TO-220
G DS !
FQP Series
S

Absolute Maximum Ratings TC = 25C unless otherwise noted

Symbol Parameter FQP30N06 Units


VDSS Drain-Source Voltage 60 V
ID Drain Current - Continuous (TC = 25C) 30 A
- Continuous (TC = 100C) 21.3 A
IDM Drain Current - Pulsed (Note 1) 120 A
VGSS Gate-Source Voltage 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 280 mJ
IAR Avalanche Current (Note 1) 30 A
EAR Repetitive Avalanche Energy (Note 1) 7.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD Power Dissipation (TC = 25C) 79 W
- Derate above 25C 0.53 W/C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 C
Maximum lead temperature for soldering purposes,
TL 300 C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Units
RJC Thermal Resistance, Junction-to-Case -- 1.90 C/W
RCS Thermal Resistance, Case-to-Sink 0.5 -- C/W
RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W

2003 Fairchild Semiconductor Corporation Rev. A2, March 2003


FQP30N06
Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25C -- 0.06 -- V/C
/ TJ Coefficient
IDSS VDS = 60 V, VGS = 0 V -- -- 1 A
Zero Gate Voltage Drain Current
VDS = 48 V, TC = 150C -- -- 10 A
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 15 A -- 0.031 0.04
On-Resistance
gFS Forward Transconductance VDS = 25 V, ID = 15 A (Note 4) -- 16 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 725 945 pF
Coss Output Capacitance f = 1.0 MHz -- 270 350 pF
Crss Reverse Transfer Capacitance -- 40 52 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 10 30 ns
VDD = 30 V, ID = 15 A,
tr Turn-On Rise Time -- 85 180 ns
RG = 25
td(off) Turn-Off Delay Time -- 35 80 ns
tf Turn-Off Fall Time (Note 4, 5) -- 40 90 ns
Qg Total Gate Charge VDS = 48 V, ID = 30 A, -- 19 25 nC
Qgs Gate-Source Charge VGS = 10 V -- 5.4 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 8.5 -- nC

Drain-Source Diode Characteristics and Maximum Ratings


IS Maximum Continuous Drain-Source Diode Forward Current -- -- 30 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 120 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 30 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 30 A, -- 45 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s (Note 4) -- 65 -- nC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 360H, IAS = 30A, VDD = 25V, RG = 25 , Starting TJ = 25C
3. ISD 30A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2003 Fairchild Semiconductor Corporation Rev. A2, March 2003


FQP30N06
Typical Characteristics

2 VGS 2
10 10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]

ID, Drain Current [A]


1 1
10 10

175

25
Notes :
Notes : 1. VDS = 25V
1. 250 s Pulse Test -55 2. 250 s Pulse Test
2. TC = 25
0 0
10 10
10
-1
10
0
10
1 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100 2
10

80
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]


R DS(ON) [m ],

60 VGS = 10V

1
VGS = 20V 10
40

20
Notes :
175 25 1. VGS = 0V
Note : TJ = 25
2. 250 s Pulse Test
0
0 20 40 60 80 100 120 10
0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6


ID, Drain Current [A]
VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage


Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
VDS = 30V
VDS = 48V
1500
V GS , Gate-Source Voltage [V]

8
Coss
Capacitance [pF]

Notes :
Ciss 1. VGS = 0 V
2. f = 1 MHz 6
1000

500
Crss 2

Note : ID = 30A

0
0 0 4 8 12 16 20
-1 0 1
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2003 Fairchild Semiconductor Corporation Rev. A2, March 2003


FQP30N06
Typical Characteristics (Continued)

1.2
2.5

2.0
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
BV DSS , (Normalized)

RDS(ON) , (Normalized)
1.5

1.0

1.0

0.9 Notes :
1. VGS = 0 V
2. ID = 250 A 0.5 Notes :
1. VGS = 10 V
2. ID = 15 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation


vs. Temperature vs. Temperature

3
10 35

Operation in This Area


is Limited by R DS(on) 30

2
10
100 s 25
ID , Drain Current [A]
ID , Drain Current [A]

1 ms
10 ms 20
1
10 DC
15

10
0
10
Notes :
o
1. TC = 25 C 5
o
2. TJ = 175 C
3. Single Pulse
-1
10 0
10
-1
10
0
10
1 2
10 25 50 75 100 125 150 175

VDS, Drain-Source Voltage [V] TC, Case Temperature []

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
(t), T h e rm a l R e s p o n s e

0
10 D = 0 .5

0 .2
N otes :
1 . Z J C( t ) = 1 . 9 0 /W M a x .
0 .1 2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
-1
0 .0 5
10
0 .0 2 PDM
0 .0 1
t1
JC

s in g le p u ls e
t2

Z

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

2003 Fairchild Semiconductor Corporation Rev. A2, March 2003


FQP30N06
Gate Charge Test Circuit & Waveform

VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)


tp
tp Time

2003 Fairchild Semiconductor Corporation Rev. A2, March 2003


FQP30N06
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG


ISD controlled by pulse period

Gate Pulse Width


VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current


I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current


VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

2003 Fairchild Semiconductor Corporation Rev. A2, March 2003


FQP30N06
Package Dimensions

TO-220
9.90 0.20 4.50 0.20
1.30 0.10

(8.70)

2.80 0.10
(1.70)

+0.10
3.60 0.10 1.30 0.05

18.95MAX.
(3.70)

15.90 0.20
9.20 0.20

(1.46)

(3.00)
(45
)
(1.00)
13.08 0.20

10.08 0.30

1.27 0.10 1.52 0.10

0.80 0.10 +0.10


0.50 0.05 2.40 0.20
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20]

10.00 0.20

Dimensions in Millimeters

2003 Fairchild Semiconductor Corporation Rev. A2, March 2003


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PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2003 Fairchild Semiconductor Corporation Rev. I2