DOC/LP/01/28.02.

02

LESSON PLAN LP EC1403

LP Rev. No: 01
Sub Code & Name: EC1403- MICROWAVE ENGINEERING Date: 22//06//2010
Page 01 of 06
Unit : I Branch : EC Semester :VII

UNIT I S PARAMETERS 9

Microwave Frequencies, Microwave Devices, Microwave Systems, Microwave Units of

Measure, Microwave Hybrid Circuits, Waveguide Tees, Magic Tees (Hybrid Trees), Hybrid
Rings (Rat-Race Circuits), Waveguide Corners, Bends and Twists, Directional Couplers,
Two-Hole Directional Couplers, Z & ABCD Parameters- Introduction to S parameters, S
Matrix of a Directional Coupler, Hybrid Couplers, Circulators and Isolators, Microwave
Circulators, Microwave Isolators.

Objective: To study passive microwave components and their S- Parameters

Session Topics to be covered Time Ref P.No Teaching

No. Method
1. Microwave Frequencies, Microwave Devices, 50m 1,3 1-5,1-3 BB
Microwave Systems, Microwave Units of
Measure
2. Microwave Hybrid Circuits, Waveguide Tees 50m 1,2,5 141-146, BB
(E plane tee, H plane tee) 175-178,
354-358
3. Magic Tees (Hybrid Trees), Hybrid Rings 50m 1,2,3,4, 146-148, BB
(Rat-Race Circuits) 5 178-183,
435-441,
402-407,
358-360
4. Waveguide Corners, Bends and Twists 50m 1,2 148-149, BB
166-167
5. Directional Couplers, Two-Hole Directional 50m 1,2,5 149-151, BB
Couplers 190-194,
367-369
6. Z & ABCD Parameters- Introduction to S 50m 2,4,5 151-152, BB
parameters 196-206,
154-157
7. S Matrix of a Directional Coupler 50m 1 151-154 BB
8. Hybrid Couplers 50m 1 154-156 BB
9. Microwave Circulators, Microwave Isolators, 50m 1,2 156-161, BB
Problems 183-188
 DOC/LP/01/28.02.02

LESSON PLAN LP EC1403

LP Rev. No: 01
Sub Code & Name: EC1403 -MICROWAVE ENGINEERING Date: 22//06//2010
Page 02 of 06
Unit : II Branch : EC Semester :VII
UNIT II TRANSFERRED ELECTRON DEVICES (TEDs) and AVALANCHE
TRANSIT-TIME DEVICES 9

Session Topics to be covered Time Ref P.No Teaching

No. Method
10. Transit time limitations in transistors, Microwave 50m 1,2,4 166-185, BB
bipolar transistors(Physical 404-408,
structure,Configuration,Principles of operation) 604-605
power frequency limitations
11. Microwave field effect transistors(Physical 50m 1,2,4 209-214- BB
structure,Principles of operation), High electron 230-235,
mobility transistor (HEMT)(Physical 409-411,
structure,operation,applications) 601-603
12. Gunn-Effect Diodes - GaAs Diode, Background, 50m 1,2 269-274, BB
Gunn Effect, Ridely-Watkins-Hilsun (RWH) 378-380
Theory, Differential Negative Resistance
13. Two-Valley Model Theory, High-Field Domain 50m 1 274-284 BB
14. Modes of Operation(criteria,Gunn oscillation 50m 1,2 284-290, BB
modes, Limited space charge accumulation mode) 380-382
15. LSA Diodes, InP Diodes, CdTe Diodes, 50m 1 291-296 BB
16. Microwave Generation, Microwave Amplification 50m 1 296-299 BB
17. Avalanche transit-time devices -Read Diode, 50m 1,2 303-308, BB
Physical Description, Avalanche Multiplication, 383-384
Carrier Current Io(t) and External Current Ie(t)
18. Output Power and Quality Factor, IMPATT Diodes, 50m 1,2,4 308-313, BB
Physical Structures, Negative Resistance, Power 384-388,
Output and Efficiency 589-591
19. TRAPATT Diodes, Physical Structures, Principles 50m 1,2 314-317, BB
of Operation, Power Output and Efficiency 390-391
20. BARITT Diodes, Physical Description, Principles 50m 1,2 317-320, BB
of Operation, Microwave Performance 391-392
21. Parametric Devices, Physical Structures, Nonlinear 50m 1,2 320-323, BB
Reactance(Small signal method) 397-498
 22. Cont. (Large signal method),Manley rowe power 50m 1,2 323-330, BB
Relations,Parametric Amplifiers(Parametric up & 398-403
down converter), Applications.
23. CAT-I 75m - - -
Transit time limitations in transistors, Microwave bipolar transistors, power frequency
limitations, Microwave field effect transistors, HEMT,Introduction, Gunn-Effect Diodes -
GaAs Diode, Background, Gunn Effect, Ridely-Watkins-Hilsun (RWH) Theory, Differential
Negative Resistance, Two-Valley Model Theory, High-Field Domain, Modes of Operation,
LSA Diodes, InP Diodes, CdTe Diodes, Microwave Generation and Amplification,
Microwave Generation, Microwave Amplification, AVALANCHE TRANSIT-TIME DEVICES,
Introduction, Read Diode, Physical Description, Avalanche Multiplication, Carrier Current
Io(t) and External Current Ie(t), Output Power and Quality Factor, IMPATT Diodes, Physical
Structures, Negative Resistance, Power Output and Efficiency, TRAPATT Diodes, Physical
Structures, Principles of Operation, Power Output and Efficiency, BARITT Diodes, Physical
Description, Principles of Operation, Microwave Performance, Parametric Devices, Physical
Structures, Nonlinear Reactance and Manley - Rowe Power Relations, Parametric Amplifiers,
Applications
Objective: To study Microwave semiconductor devices & applications.

DOC/LP/01/28.02.02

LESSON PLAN LP EC1403

LP Rev. No: 01
Sub Code & Name: EC1403 - MICROWAVE ENGINEERING Date: 22//06//2010
Page 03 of 06
Unit : III Branch : EC Semester :VII

Unit III MICROWAVE LINEAR-BEAM TUBES (O TYPE) and MICROWAVE

CROSSED FIELD TUBES (M TYPE) 9
Klystrons, Reentrant Cavities, Velocity-Modulation Process, Bunching Process, Output
Power and Beam Loading, State of the Art, Multicavity Klystron Amplifiers, Beam-Current
Density, Output Current Output Power of Two-Cavity Klystron, Output Power of Four-Cavity
Klystron, Reflex Klystrons, Velocity Modulation, Power Output and Efficiency, Electronic
Admittance, Helix Traveling-Wave Tubes (TWTs), Slow-Wave structures, Amplification
Process, Convection Current, Axial Electric Field, Wave Modes, Gain Consideration,
MICROWAVE CROSSED-FIELD TUBES , Magnetron Oscillators, Cylindrical
Magnetron, Coaxial Magnetron, Tunable Magnetron, Ricke diagram.
.

Objective: To study Microwave sources and amplifiers

Session Topics to be covered Time Ref P.No Teaching

No. Method
24. Klystrons, Reentrant Cavities, Velocity- 50m 1,2 341-347, BB
Modulation Process 322-324
25. Bunching Process, Output Power and Beam 50m 1,2 348-354, BB
Loading(Efficiency) 324-328
26. Cont. Power, State of the Art(Extended 50m 1 355-362 BB
 interaction, High efficiency and power)
27. Multi-cavity Klystron Amplifiers, Beam-Current 50m 1,2 362-368, BB
Density 345
28. Output Current Output Power of Two-Cavity 50m 1,2 369-373, BB
Klystron, Four-Cavity Klystron 334-340
29. Reflex Klystrons, Velocity Modulation, Power 50m 1,2 373-378, BB
Output and Efficiency 332-334
30. Electronic Admittance, Helix Traveling-Wave 50m 1,2 379-383, BB
Tubes (TWTs) 346-350
31. Slow-Wave structures, Amplification Process 50m 1 384-390 BB
32. Convection Current, Axial Electric Field, Wave 50m 1 391-397 BB
Modes, Gain Consideration
33. Microwave crossed-field tubes , Magnetron 50m 1,2 425-429, BB
Oscillators, Cylindrical Magnetron(Angular 351-358
frequency,Output power and efficiency)
34. Coaxial Magnetron, Tunable Magnetron, Ricke 50m 1 442-447 BB
diagram, Problems

DOC/LP/01/28.02.02

LESSON PLAN LP EC1403

LP Rev. No: 01
Sub Code & Name: EC1403 -MICROWAVE ENGINEERING Date: 22//06//2010
Page 04 of 06
Unit : IV Branch : EC Semester :VII

UNIT IV STRIP LINES and MONOLITHIC MICROWAVE INTEGRATED

CIRCUITS 9

Introduction, Microstrip Lines, Characteristic Impedance of Microstrip Lines, Losses in

Microstrip Lines, Quality Factor Q of Microstrip Lines, Parallel Strip Lines, Distributed
Lines, Characteristic Impedance, Attenuation Losses, Coplanar Strip Lines, Shielded Strip
Lines, References, Problems, MONOLITHIC MICROWAVE INTEGRATED
CIRCUITS, Introduction, Materials, Substrate Materials, Conductor Materials, Dielectric
Materials, Resistive Materials, Monolithic Microwave Integrated-Circuit Growth, MMIC
Fabrication Techniques, Fabrication Example.

Objective: To study microwave integrated ciruits

Session Topics to be covered Time Ref P.No Teaching

No. Method
35. Microstrip Lines- Introduction, Characteristic 50m 1,3 472-477, BB
Impedance 130-136
36. Losses(Dielectric, Ohmic ,Radiation losses) 50m 1 477-484 BB
37. Quality Factor Q of Microstrip Lines, Parallel 50m 1 484-486 BB
Strip Lines
38. Distributed Lines, Characteristic Impedance, 50m 1,3 486-488, BB
 Attenuation Losses 153-157
39. Coplanar Strip Lines, Shielded Strip Lines, 50m 1,3,4 488-481- BB
Monolithic microwave integrated circuits, 495-497,
175-178,
584-588
40. Materials, Substrate Materials, Conductor 50m 1 497-500 BB
Materials
41. Dielectric Materials, Resistive Materials, 50m 1 500-502 BB
Monolithic Microwave Integrated-Circuit
Growth
42. Monolithic Microwave Integrated circuits 50m 1 502-503 BB
Fabrication Techniques
43. Cont. Epitaxial growth,lithography, Fabrication 50m 1 503-504 BB
Example
44. CAT-II 75m - -

DOC/LP/01/28.02.02

LESSON PLAN LP EC1403

LP Rev. No: 01
Sub Code & Name: EC1403 -MICROWAVE ENGINEERING Date: 22//06//2010
Page 05 of 06
Unit : V Branch : EC Semester :VII

UNIT V MICROWAVE MEASUREMENTS: 9

Slotted line VSWR measurement, VSWR through return loss measurements, power
measurement, impedance measurement insertion loss and attenuation measurements-
measurement of scattering parameters - Measurement of 1 dB, dielectric constant
measurement of a solid using waveguide

Objective: To study microwave measurements.

Session Topics to be covered Time Ref P.No Teaching

No. Method
45. Slotted line VSWR measurement 50m 2 466-471 BB
VSWR through return loss
measurements
46. Power measurement (Schottky Barrier 50m 2 459-462 BB
 Diode sensor,Bolometer sensor,Power
meter)
47. Cont. Thermocouple 50m 2 463-464- BB
sensor,Calorimetric method, 473-474
Impedance measurement(Slotted line
method)
48. Cont. Reactive discontinuity 50m 2 474-478 BB
method,Reflectometer method
49. Insertion loss measurements 50m 2 464 BB
50. Atteuation measuremet 50m 2 465-466 BB
51. Measurement of scattering parameters 50m 2 497-501 BB
52. Measurement of dielectric constant 50m 2 491-494 BB
(Waveguide method,Cavity
perturbation method)
53. Measurement of a solid using 50m 2 495-497 BB
waveguide
54. CAT-III 75m

DOC/LP/01/28.02.02

LESSON PLAN LP EC1403

LP Rev. No: 01
Sub Code & Name: EC1403 - MICROWAVE ENGINEERING Date: 22//06//2010
Page 06 of 06
Branch : EC Semester :VII

Course Delivery Plan:

1 2 3 4 5 6 7 8 9 10 11 12 13 14
Week
I II I II I II I II I II I II I II I II I II I II I II I II I II I
Units
1 2 3 4 5

CAT-I CAT-II CAT-III

TEXT BOOKS
1. Samuel Y.LIAO : Microwave Devices and Circuits - Prentice Hall of India - 3 rd Edition
(2003)
2. Annapurna Das and Sisir K.Das: Microwave Engineering - Tata McGraw-Hill (2000)
(UNIT V)

REFERENCES
3. R.E. Collin : Foundations for Microwave Engg. - IEEE Press Second Edition (2002)
4. David M.POZAR : Microwave Engg. - John Wiley & Sons - 2nd Edition (2003)
5. P.A.RIZZI - Microwave Engg. (Passive ckts) - PH1

Prepared by Approved by
Signature

Name Dr M J S Rangachar / Prof.E.G.Govindan

Ms.S.Reethi
Designation Professor / Lecturer HOD-EC
Date 29.06.2010 29.06.2010