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BSC093N04LS G

OptiMOS3 Power-Transistor Product Summary


Features VDS 40 V
Fast switching MOSFET for SMPS RDS(on),max 9.3 mW
Optimized technology for DC/DC converters ID 49 A

Qualified according to JEDEC1) for target applications PG-TDSON-8


N-channel; Logic level
Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Superior thermal resistance

100% Avalanche tested

Pb-free plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Type Package Marking

BSC093N04LS G PG-TDSON-8 093N04LS

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID V GS=10 V, T C=25 C 49 A

V GS=10 V, T C=100 C 31

V GS=4.5 V, T C=25 C 40

V GS=4.5 V,
26
T C=100 C

V GS=10 V, T A=25 C,
13
R thJA=50 K/W 2)

Pulsed drain current3) I D,pulse T C=25 C 196

Avalanche current, single pulse4) I AS T C=25 C 40

Avalanche energy, single pulse E AS I D=40 A, R GS=25 W 10 mJ

Gate source voltage V GS 20 V


1)
J-STD20 and JESD22

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BSC093N04LS G

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Power dissipation P tot T C=25 C 35 W

T A=25 C,
2.5
R thJA=50 K/W 2)

Operating and storage temperature T j, T stg -55 ... 150 C

IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC bottom - - 3.6 K/W

top 20

Device on PCB R thJA 6 cm2 cooling area2) - - 50

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=14 A 1.2 - 2

V DS=40 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 A
T j=25 C

V DS=40 V, V GS=0 V,
- 10 100
T j=125 C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA

Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 11.0 13.7 mW

V GS=10 V, I D=40 A - 7.8 9.3

Gate resistance RG - 1 - W

|V DS|>2|I D|R DS(on)max,


Transconductance g fs 34 67 - S
I D=40 A

2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information

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BSC093N04LS G

Parameter Symbol Conditions Values Unit


min. typ. max.

Dynamic characteristics

Input capacitance C iss - 1400 1900 pF


V GS=0 V, V DS=20 V,
Output capacitance C oss - 340 450
f =1 MHz
Reverse transfer capacitance Crss - 16 -

Turn-on delay time t d(on) - 3.6 - ns

Rise time tr V DD=20 V, V GS=10 V, - 2.4 -

Turn-off delay time t d(off) I D=30 A, R G,ext=1.6 W - 16 -

Fall time tf - 2.8 -

Gate Charge Characteristics5)

Gate to source charge Q gs - 4.9 - nC

Gate charge at threshold Q g(th) - 2.3 -

Gate to drain charge Q gd V DD=20 V, I D=30 A, - 2.0 -

Q sw V GS=0 to 10 V
Switching charge - 4.6 -

Gate charge total Qg - 18 24

Gate plateau voltage V plateau - 3.5 - V

V DD=20 V, I D=30 A,
Gate charge total Qg - 8.6 11.4 nC
V GS=0 to 4.5 V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 17 -
V GS=0 to 10 V

Output charge Q oss V DD=20 V, V GS=0 V - 13 -

Reverse Diode

Diode continuous forward current IS - - 29 A


T C=25 C
Diode pulse current I S,pulse - - 196

V GS=0 V, I F=40 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 C

V R=20 V, I F=I S,
Reverse recovery charge Q rr - 15 - nC
di F/dt =400 A/s

5)
See figure 16 for gate charge parameter definition

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BSC093N04LS G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS10 V

40 50

35

40
30

25
30
Ptot [W]

ID [A]
20

20
15

10
10

0 0
0 40 80 120 160 0 40 80 120 160

TC [C] TC [C]

3 Safe operating area 4 Max. transient thermal impedance


I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 10
limited by on-state
resistance

1 s
0.5
102
10 s

1
0.2
100 s
ZthJC [K/W]

0.1
DC
ID [A]

101 0.05

0.02
1 ms
0.01
0.1
10 ms
single pulse
100

10-1 0.01 0 0 0 0 0 0 1

10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]

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BSC093N04LS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C
parameter: V GS parameter: V GS

120 20
3.5 V
5V
4.5 V
100 10 V
16
4V

80

RDS(on) [mW]
12 4.5 V
4V
ID [A]

60 5V

10 V
8

40

3.5 V
4
20
3.2 V

3V
2.8 V
0 0
0 1 2 3 0 10 20 30 40 50

VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance


I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C
parameter: T j

120 120

100 100

80 80
gfs [S]
ID [A]

60 60

40 40

20 20
150 C
25 C

0 0
0 1 2 3 4 5 0 40 80 120 160
VGS [V] ID [A]

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BSC093N04LS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=14 A

16 2.5

2
12

98 %
RDS(on) [mW]

1.5

VGS(th) [V]
8 typ

4
0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj [C] Tj [C]

11 Typ. capacitances 12 Forward characteristics of reverse diode


C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 1000

103 Ciss

Coss 150 C, 98%


100
25 C
C [pF]

IF [A]

102
150 C

25 C, 98%
Crss 10

101

100 1
0 10 20 30 40 0.0 0.5 1.0 1.5 2.0
VDS [V] VSD [V]

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BSC093N04LS G
13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start) parameter: V DD

100 12

20 V
10 8V

32 V

8
25 C

VGS [V]
IAV [A]

100 C
10 6
125 C

1 0
0.1 1 10 100 1000 0 4 8 12 16 20
tAV [s] Qgate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms


V BR(DSS)=f(T j); I D=1 mA

45
V GS

Qg
40

35
VBR(DSS) [V]

30 V gs(th)

25
Q g(th) Q sw Q gate

20 Q gs Q gd
-60 -20 20 60 100 140 180

Tj [C]

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BSC093N04LS G

Package Outline PG-TDSON-8

PG-TDSON-8: Outline

Footprint

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BSC093N04LS G

Package Outline

PG-TDSON-8: Tape

Dimensions in mm

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BSC093N04LS G

Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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(www.infineon.com).

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on the types in question, please contact the nearest Infineon Technologies Office.
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Rev. 2.1 page 10 2013-05-21