Advance Power Electronics

To : Er. Raju Wagle

Department of Electrical Engineering
IOE-WRC, TU

By: Mahesh Kumar Bhatta

073/MSDG/210

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Power Electronics

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 1. Introduction

1.1 Application of Power Electronics.

The demand for control of electric power for electric motor drive
systems and industrial control existed for many years, and this
led to early development of the Ward-Leonard System to obtain
a variable dc voltage for the control of dc motor drives. Power
electronics have revolutionized the concept of power control.

Power electronics combine: control, power, and electronics.

Control deals with the steady state and dynamic

characteristics of the closed loop systems.

Power deals with the static and rotating power equipment for
generation, transmission and distribution of electric energy.

Electronics deal with the solid state devices and circuits for
signal processing to meet the desired control objectives.

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 1. Introduction

1.1 Application of Power Electronics.

Power Electronics may be
defined as the application Figure 1.1
of solid-state electronics for
the control and conversion
of electric power.

The relationship of power

electronics with: power,
electronics and control is
shown in Figure 1.1

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1. Introduction

1.1 Application of Power Electronics.

Power Electronics are based primarily on the
switching of the power semiconductors devices. With
the development of power semiconductor technology, the
power handling capabilities and switching speeds of the
power devices have improved tremendously.
The development of microprocessors and microcomputer
technology has a great impact on the control and synthesizing
the control strategy for the power semiconductor devices.
Modern power electronics equipment uses:
Power semiconductors that can be regarded as
muscle, and
Microelectronics (that have the power and
intelligence) as brain.

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1. Introduction

1.1 Application of Power Electronics.

Power Electronics are used in a great variety of high-power
products, including: heat control, light controls, motor
controls, power supplies, vehicle propulsion systems, and high
voltage direct current (HVDC) systems.

It is difficult to draw the flexible ac transmission (FACTs)

boundaries for the application of power electronics, especially
with the present trends in the development of power devices
and microprocessors. That means, it is also use for FACTs.

Table 1.1 (next slide) shows some applications of power

electronics.

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 Examples of Some
Applications

Part of Table 1.1

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1. Introduction

1.1.1 History of Power Electronics.

Mercury arc rectifier (year 1900)
Metal tank rectifier.
Grid controlled vacuum tube rectifier.
Ignitron, Phanatron, Thyratron
SCR (Silicon Controlled Rectifier)
The 1st Thyristor developed by Bell labs in 1956.
1st Commercial grade SCR developed by
General Electric Co. in 1958.

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 1. Introduction

1.1.1 History of Power Electronics

The break through and evolution of power electronic devices is the 9

thread of the power electronics history.
1. Introduction

1.1.1 History of Power Electronics

Semiconductor rectifier
Mercury arc
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rectifier
1. Introduction

1.1.1 History of Power Electronics

Thyristor (SCR), GTO,

Triac
Thyratron 11
1. Introduction

1.1.1 History of Power Electronics

Power MOSFET, IGBT

Vacuum tube 12
1. Introduction

1.1.1 History of Power Electronics

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1. Introduction

1.1.1 History of Power Electronics

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1. Introduction

1.1.1 History of Power Electronics

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 1. Introduction

1.2 Power Semiconductor Devices.

First thyristor SCR (Silicon Controlled Rectifier) was developed in late
1957. Until 1970 the conventional thyristors had been exclusively used
for power control in industrial applications.
Since 1970, various types of power semiconductor were developed and
became available. See figure 1.3 (next slide) for classification of power
devices, which are either made of Silicon or Silicon-Carbide. Majority of
the devices are made from the Silicon (not Silicon-Carbide).
These can be divided broadly into following five types: Power Diodes,
thyristors, power bi-polar junction transistors (BJTs), power metal-
oxide semiconductor field effect transitors (MOSFETs), and Insulated-
gate bipolar transistors (IGBTs) and static induction transitors (SITs).

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 Figure 1.3

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Types of Power Devices

 1. Introduction

1.2 Power Semiconductor Devices

1.2.1 Power Diode. A diode has two terminals: a cathode and an
anode. Power diodes are of three types:
General Purpose; available upto 6000 V, 4500 A.

High Speed (or fast recovery); available upto 6000 V, 1100

A. The reverse recovery time varies between 0.1 to 5

Seconds. The fast-recovery diodes are essential for high
frequency switching of power convertors.
Schottky. Schottky diodes have low On-state voltage and very

small recovery time; typically in nanoseconds. The leakage

current increases with voltage ratings and hence their
ratings are limited to 100 V, 300 A.
A diode conducts when its anode voltage is higher than that of the
cathode; forward voltage drop of a power diode is from 0.5 to 1.2 18
volts.
 1. Introduction

1.2 Power Semiconductor Devices

1.2.1 Power Diode
A diode conducts when its anode voltage is higher than that of the
cathode. Forward voltage drop of a power diode is from 0.5 to 1.2
volts.
Blocking Mode. If cathode voltage is higher than its anode voltage,
the diode is said to be in a Blocking Mode.

Figure 1.4 (next slide) shows various packing-configurations of

general-purpose diodes: two types;
Stud or Stud-mounted type and
Disk, press pak, or hockey puck type
In a stud mounted type either the anode or cathode could be the stud.
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 General Purposes Diodes

Figure 1.4
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 1. Introduction

1.2 Power Semiconductor Devices

1.2.2 Thyristors. A thyristor has three terminals: an anode, a
cathode, and a gate.
Operation of a Thyristor.
When a small current passes through the gate terminal to cathode, the
thyristor conducts, provided the anode terminal is at a higher potential
than the cathode. Or in our version:
A thyristor conducts when following two conditions are met:
Its anode terminal is at a higher potential than its cathode, and
then
A small current passes through the gate terminal to cathode

Thyristors can be subdivided into approximately eleven types.

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 1. Introduction
1.2 Power Semiconductor Devices
1.2.2 Thyristors Thyristors may be subdivided into following
eleven types:
A. Forced-commutated Thyristor G. Light-activated silicon-controlled
B. Line-commutated Thyristor rectifier (LASCR)
C. Gate-turn-off Thyristor (GTO) H. MOS turn-off (MTO) Thyristor
D. Reverse-conducting Thyristor I. Emitter turn-off (ETO) Thyristor
(RCT) J. Integrated gate-commutated
E. Static induction Thyristor (SITH) thyristor (IGCT)
F. Gate-assisted turn-off Thyristor K. MOS Controlled Thyristors (MCTs)
(GATT)

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 1. Introduction

1.2 Power Semiconductor Devices

1.2.2 Thyristors... Once a thyristor is in a conduction mode the gate
circuit has no control and the thyristor continues to conduct.
When a thyristor is in conduction mode, the forward voltage drop is very
small; typically 0.5 to 2 Volts (between anode and cathode terminals).
A conducting thyristor can be turned off by making the potential of the
anode equal to or less than the cathode potential.
The line-commutated thyristors are turned off due to the sinusoidal nature
of the input voltage.
Forced-commutated thyristors are turned off by an extra circuit called
commutation circuitry.
Figure 1.5 (next slide) shows various packing-configurations of phase-
control (line-commutated) thyristors; stud, hockey puck, flat and pin type.
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Thyristors

Figure 1.5
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 1. Introduction

1.2 Power Semiconductor Devices

1.2.2 Thyristors... Natural or line-commutated thyristors are available
with ratings up to 6000 volts. 4500 Amps.
The turn-off time of high-speed reverse-blocking thyristors has been
improved substantially and it is possible to have 10 to 20 sec in a 3000
V, 3600 A thyristor.
The turn-off time is defined as the time interval between the instant when
the principal current has decreased to zero after external switching of the
principal voltage circuit, and the instant when the thyristor is capable of
supporting a specified principal voltage without turning on.

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 1. Introduction

1.2 Power Semiconductor Devices

1.2.2 Thyristors...
RCTs and GATTs are widely used for high-speed switching, especially in
traction applications.
An RCT can be considered as a thyristor with an inverse-parallel
diode. RCTs are available up to 4000 v, 2000 A (and 800 A in reverse
conduction) with a switching speed of 40 Sec.
GATTs are available up to 1200 v, 400 A with a switching speed of
8 Sec.
LASCRs, which are available up to 6000 v, 1500 A, with a switching speed
of 200 to 400 Sec, are suitable for high voltage power systems, specially
in HVDC.

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 1. Introduction

1.2 Power Semiconductor Devices

1.2.2 Thyristors...
For low power ac applications, TRIACs are widely used in all types of
simple heat controls, light controls, motor controls and ac switches.
The characteristics of TRIACs are similar to two thyristors connected in
inverse parallel and having only one gate terminal. The current flow
through a TRIAC can be controlled in either direction.

Reading Assignment: Please study carefully, explanation for the

remaining types of Thyristors ( from page 8 to 9 of the text book).

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 1. Introduction

1.2 Power Semiconductor Devices

1.2.3 Power Transistors. Power Transistors are four types:
BJTs, Power MOSFETs, IGBTs, and SITs.

BJTs. A bipolar transistor has three terminals: base, emitter and

collector. It is normally operated as a switch in common-emitter
configuration.

As long as the base of an NPN-transistor is at a higher potential

than the emitter and the base current is sufficiently large to drive
the transistor in the saturation region, the transistor remains On
, provided the collector-to-emitter junction is properly biased.

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 1. Introduction

1.2 Power Semiconductor Devices

1.2.3 Power Transistors... Power Transistors are four
types: BJTs, Power MOSFETs, IGBTs, and SITs.

BJTs High power bipolar junction transistors are commonly

used in power converters at a frequency below 10 K Hz and are
effectively applied in the power ratings up to 1200 V, 400 A.

Forward voltage drop of a conducting transistor is in the range

of 0.5 to 1.5 V. If the base drive voltage is withdrawn, the
transistor goes-to / remains in the non-conduction (or off)
mode. Various packing configurations are shown at Figure 4.2 in
the text book.
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 1. Introduction

1.2 Power Semiconductor Devices

1.2.3 Power Transistors... Power Transistors are four types: BJTs,
Power MOSFETs, IGBTs, and SITs.
Power MOSFETs. Power MOSFETs are used in high-speed power
converters and are available at a relatively low power ratings in the range
of 1000 V, 100 A at a frequency range of several tens of kilohertz. The
various power MOSFETs of different sizes are shown in Figure 4.24 in the
text book.

IGBTs. IGBTs are voltage controlled power transistors. They are

inherently faster than BJTs, but still not quite as fast as MOSFETs.
However, they offer far superior drive and output characteristics to those
of BJTs. IGBTs are suitable for high voltage high current, and frequency up
to 20 kHz. IGBTs are available up to 1700 V, 2400 A.
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 1. Introduction

1.2 Power Semiconductor Devices

1.2.3 Power Transistors Power Transistors are four types: BJTs,
Power MOSFETs, IGBTs, and SITs.
COOLMOS. COOLMOS is a new technology for high-voltage power
MOSFETs, and it implements a compensation structure in the vertical drift
region of a MOSFET to improve the on-state resistance.
It has a lower on-state resistance for the same package compared with
that of other MOSFETs. The conduction losses are at least 5 times less as
compared with those of the conventional MOSFET technology.
COOLMOS is capable of handling two to three times more output power as
compared to the conventional MOSFET in the same package. The active
chip area of COOLMOS is approximately 5 times smaller than that of a
standard MOSFET The on-state resistance of a 600 V, 47 A COOLMOS is
70 m .
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 1. Introduction

1.2 Power Semiconductor Devices

1.2.3 Power Transistors Power Transistors are four types: BJTs,
Power MOSFETs, IGBTs, and SITs.
SIT. A SIT is a high-power, high-frequency device. It is essentially the
solid-state version of the triode vacuum tube, and is similar to a junction
field-effect transistor (JFET). It has a low-noise, low-distortion, high-audio-
frequency power capability.
The turn-on and turn-off times are very short, typically 0.25 S. The
normally on-characteristic and the high on-state drop, limit its applications
for general power conversions.
The current rating of SITs can be up to 1200 V, 300 A, and the switching
speed can be as high as 100 kHz. SITs are most suitable for high-power,
high-frequency applications (e.g. audio, VHF/ ultrahigh frequency [UHF],
and microwave amplifiers).
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 1. Introduction

1.2 Power Semiconductor Devices

Power Range of Available Semiconductors.
Figure 1.7 (on the next slide) shows the power range of commercially
available power semiconductors.

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Figure 1.7
 1. Introduction

1.2 Power Semiconductor Devices

Power Range of Available Semiconductors.
The ratings of commercially available power semiconductor devices are
shown in Table 1.2 (next slide)
Where the on-voltage is the on-state voltage drop of the device at the
specified current.

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Part of
Table 1.2
Reference

Muhammad H Rashid, Power Electronics Circuits,

Devices, and Applications, 3rd Edition, Prentice-
Hall Inc, 2004.

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