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July 1999

FDG6301N
Dual N-Channel, Digital FET

General Description Features


These dual N-Channel logic level enhancement mode 25 V, 0.22 A continuous, 0.65 A peak.
field effect transistors are produced using Fairchild's RDS(ON) = 4 @ VGS= 4.5 V,
proprietary, high cell density, DMOS technology. This RDS(ON) = 5 @ VGS= 2.7 V.
very high density process is especially tailored to
minimize on-state resistance. This device has been Very low level gate drive requirements allowing direct
designed especially for low voltage applications as a operation in 3 V circuits (VGS(th) < 1.5 V).
replacement for bipolar digital transistors and small
Gate-Source Zener for ESD ruggedness
signal MOSFETs. (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.

SC70-6 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223

S2
G2 1 or 4 *
6 or 3

D1 .01
2 or 5 5 or 2

D2
G1
S1
SC70-6 3 or 6 4 or 1 *

*The pinouts are symmetrical; pin 1 and 4 are interchangeable.


Units inside the carrier can be of either orientation and will not affect the functionality of the device.

Absolute Maximum Ratings TA = 25C unless otherwise noted


Symbol Parameter FDG6301N Units
VDSS Drain-Source Voltage 25 V
VGSS Gate-Source Voltage 8 V
ID Drain/Output Current - Continuous 0.22 A
- Pulsed 0.65
PD Maximum Power Dissipation (Note 1) 0.3 W
TJ,TSTG Operating and Storage Temperature Range -55 to 150 C
ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV
Human Body Model(100 pF / 1500 )
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient 415 C/W

FDG6301N Rev.E1
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 25 V
BVDSS/TJ Breakdown Voltage Temp. Coefficient ID = 250 A, Referenced to 25 o C 25 mV / oC
IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 A
TJ = 55C 10 A
IGSS Gate - Body Leakage Current VGS = 8 V, VDS = 0 V 100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 0.65 0.85 1.5 V
VGS(th)/TJ Gate Threshold Voltage Temp.Coefficient ID = 250 A, Referenced to 25 o C -2.1 mV / oC
RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.22 A 2.6 4
TJ =125C 5.3 7
VGS = 2.7 V, ID = 0.19 A 3.7 5
ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V 0.22 A
gFS Forward Transconductance VDS = 5 V, ID= 0.22 A 0.2 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, 9.5 pF
f = 1.0 MHz
Coss Output Capacitance 6 pF
Crss Reverse Transfer Capacitance 1.3 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time VDD = 5 V, ID = 0.5 A, 5 10 ns
tr Turn - On Rise Time VGS = 4.5 V, RGEN = 50 4.5 10 ns
tD(off) Turn - Off Delay Time 4 8 ns
tf Turn - Off Fall Time 3.2 7 ns
Qg Total Gate Charge VDS = 5 V, ID = 0.22 A, 0.29 0.4 nC
VGS = 4.5 V
Qgs Gate-Source Charge 0.12 nC
Qgd Gate-Drain Charge 0.03 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Source Current 0.25 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.25 A (Note 2) 0.8 1.2 V
Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed
by design while RCA is determined by the user's board design. RJA = 415OC/W on minimum pad mounting on FR-4 board in still air.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

FDG6301N Rev.E1
Typical Electrical Characteristics

0.5 5
VGS =4.5V

DRAIN-SOURCE ON-RESISTANCE
I D, DRAIN-SOURCE CURRENT (A)

3.5V 4.5
0.4 VGS = 2.5V

R DS(ON), NORMALIZED
3.0V
4 2.7V
0.3 2.7V 3.0V
3.5
2.5V
0.2 3.5V
3 4.0V
2.0V 4.5V
0.1 5.0V
2.5

0 2
0 1 2 3 4 5 0 0.1 0.2 0.3 0.4
VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with


Drain Current and Gate Voltage .

1.8 20
I D = 0.22A ID = 0.10A
DRAIN-SOURCE ON-RESISTANCE

RDS(ON), ON-RESISTANCE(OHM)
1.6 V GS = 4.5V
RDS(ON) , NORMALIZED

16

1.4
12
1.2

8
1
TA =125C
0.8 4

25C
0.6
-50 -25 0 25 50 75 100 125 150 0
1 2 3 4 5
T , JUNCTION TEMPERATURE (C)
J VGS ,GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with


with Temperature. Gate-to-Source Voltage.

0.4
0.2
VGS = 0V
I S , REVERSE DRAIN CURRENT (A)

V DS = 5V TJ = -55C
25C 0.1
I D , DRAIN CURRENT (A)

0.15
125C
TJ = 125C
0.01
0.1 25C

-55C
0.001
0.05

0.0001
0 0 0.2 0.4 0.6 0.8 1 1.2
0.5 1 1.5 2 2.5 3
VSD , BODY DIODE FORWARD VOLTAGE (V)
VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage


Variation with Source Current
and Temperature.

FDG6301N Rev.E1
Typical Electrical Characteristics ( continued)

6 30
I D = 0.22A VDS = 5V
V GS , GATE-SOURCE VOLTAGE (V)

10V
5
15

CAPACITANCE (pF)
4
Ciss
8
3
Coss
5
2 Crss

1 3 f = 1 MHz
VGS = 0 V
2
0 0.1 0.3 1 3 10 25
0 0.1 0.2 0.3 0.4 0.5 0.6
V DS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

1 50
10m
s SINGLE PULSE
IT 40 R JA=415C/W
I D , DRAIN CURRENT (A)

L IM 10
0.3
O N) 0m TA= 25C
S( s
RD
POWER (W)

30
1s
0.1
10 20
s
V GS = 4.5V DC
0.03 SINGLE PULSE
10
RJA = 415 C/W
T A = 25C
0.01 0
0.4 0.8 2 5 10 25 40 0.0001 0.001 0.01 0.1 1 10 200
VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

R JA (t) = r(t) * R JA
0.2 0.2 R JA =415 C/W
0.1
0.1
0.05 P(pk)
0.05
0.02 t1
t2
0.02 0.01
Single Pulse TJ - TA = P * R JA (t)
0.01
Duty Cycle, D = t 1/ t 2
0.005

0.002
0.0001 0.001 0.01 0.1 1 10 100 200
t 1, TIME (sec)

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in note 1.
Transient thermal response will change depending on the circuit board design.

FDG6301N Rev.E1
SC70-6 Tape and Reel Data and Package Dimensions

SC70-6 Packaging
Configuration: Figure 1.0

Customized Label Packaging Description:


SC70-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
Antistatic Cover Tape These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
F63TNR Static Dissipative
Label Embossed Carrier Tape

21
21 21 21 21
SC70-6 Packaging Information
Standard Pin 1
Packaging Option D87Z
(no flow code)
Packaging type TNR TNR SC70-6 Unit Orientation
Qty per Reel/Tube/Bag 3,000 10,000
Reel Size 7" Dia 13"
Box Dimension (mm) 184x187x47 343x343x64
Max qty per Box 9,000 30,000
Weight per unit (gm) 0.0055 0.0055 343mm x 342mm x 64mm F63TNR Barcode Label
Weight per Reel (kg) 0.1140 0.3960 Intermediate box for D87Z Option
Note/Comments

F63TNR
Label

F63TNR Label sample


F63TNR
184mm x 187mm x 47mm Label LOT: CBVK741B019 QTY: 3000

Pizza Box for Standard Option FSID: FDG6302P SPEC:

D/C1: D9842 QTY1: SPEC REV:


D/C2: QTY2: CPN:
N/F: F (F63TNR)3

SC70-6 Tape Leader and Trailer


Configuration: Figure 2.0

Carrier Tape

Cover Tape
Components
Trailer Tape Leader Tape
300mm minimum or 500mm minimum or
75 empty pockets 125 empty pockets

August 1999, Rev. C


SC70-6 Tape and Reel Data and Package Dimensions, continued

SC70-6 Embossed Carrier Tape


Configuration: Figure 3.0 P0 D0
T
E1

K0 W
E2
Wc B0

Tc
A0 P1 D1

User Direction of Feed

Dimensions are in millimeter

Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SC70-6 2.24 2.34 8.0 1.55 1.125 1.75 6.25 3.50 4.0 4.0 1.20 0.255 5.2 0.06
(8mm) +/-0.10 +/-0.10 +/-0.3 +/-0.05 +/-0.125 +/-0.10 min +/-0.05 +/-0.1 +/-0.1 +/-0.10 +/-0.150 +/-0.3 +/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C). 0.5mm
20 deg maximum maximum

Typical
component
cavity 0.5mm
B0 center line maximum

20 deg maximum component rotation

Typical
Sketch A (Side or Front Sectional View) component Sketch C (Top View)
A0 center line
Component Rotation Component lateral movement
Sketch B (Top View)
SC70-6 Reel Configuration: Figure 4.0 Component Rotation

W1 Measured at Hub

Dim A
Max

Dim A See detail AA


max Dim N

7" Diameter Option


B Min

Dim C

See detail AA
Dim D
W3 min

13" Diameter Option W2 max Measured at Hub

DETAIL AA

Dimensions are in inches and millimeters

Reel
Tape Size Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
Option
7.00 0.059 0.512 +0.020/-0.008 0.795 2.165 0.331 +0.059/-0.000 0.567 0.311 0.429
8mm 7" Dia
177.8 1.5 13 +0.5/-0.2 20.2 55 8.4 +1.5/0 14.4 7.9 10.9

13.00 0.059 0.512 +0.020/-0.008 0.795 4.00 0.331 +0.059/-0.000 0.567 0.311 0.429
8mm 13" Dia
330 1.5 13 +0.5/-0.2 20.2 100 8.4 +1.5/0 14.4 7.9 10.9

July 1999, Rev. C


SC70-6 Tape and Reel Data and Package Dimensions, continued

SC70-6 (FS PKG Code 76)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]

Part Weight per unit (gram): 0.0055

September 1998, Rev. A1


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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER


NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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