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V GS=4.5 V,
100
T C=100 C
V GS=4.5 V, T A=25 C,
25
R thJA=50 K/W 2)
T A=25 C,
2.5
R thJA=50 K/W 2)
Thermal characteristics
Static characteristics
V DS=30 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 A
T j=25 C
V DS=30 V, V GS=0 V,
- 10 100
T j=125 C
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Dynamic characteristics
Fall time tf - 14 -
Q sw V GS=0 to 4.5 V
Switching charge - 17 26
V DD=15 V, I D=30 A,
Gate charge total Qg - 93 124
V GS=0 to 10 V
V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 39 52 nC
V GS=0 to 4.5 V
Reverse Diode
V GS=0 V, I F=30 A,
Diode forward voltage V SD - 0.81 1.1 V
T j=25 C
V R=15 V, I F=I S,
Reverse recovery charge Q rr - - 20 nC
di F/dt =400 A/s
4)
See figure 13 for more detailed information
5)
See figure 16 for gate charge parameter definition
100 120
100
80
4.5 V 10 V
80
60
P tot [W]
I D [A]
60
40
40
20
20
0 0
0 40 80 120 160 0 40 80 120 160
T C [C] T C [C]
103 10
limited by on-state
resistance 1 s
10 s
102 100 s
DC 1
0.5
Z thJC [K/W]
I D [A]
1 ms
101
0.2
10 ms
0.1
0.1
0.05
100
0.02
0.01
single pulse
10-1 0.01 0 0 0 0 0 0 1
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]
300 4
4.5 V
5V
250 3V
4V 3.2 V
10 V
3
3.5 V
3.5 V
200
R DS(on) [m]
4V
I D [A]
4.5 V
150 2
5V
6V
3.2 V
10 V
100
3V
1
50 2.8 V
0 0
0 1 2 3 0 10 20 30 40 50
V DS [V] I D [A]
200 280
240
160
200
120
160
g fs [S]
I D [A]
120
80
80
150 C
40
25 C
40
0 0
0 1 2 3 4 5 0 40 80 120 160
V GS [V] I D [A]
4 2.5
2
3
R DS(on) [m]
1.5
V GS(th) [V]
98 %
2
typ
1
0.5
0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [C] T j [C]
104 10000
1000
Ciss
25 C 150 C, 98%
Coss
103 1000
100
150 C
C [pF]
I F [A]
25 C, 98%
Crss
102 100
10
101 10
1
0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0
V DS [V] V SD [V]
100 12
15 V
25 C 10
100 C 6V
24 V
8
125 C
V GS [V]
I AV [A]
10 6
1 0
1 10 100 1000 0 25 50 75 100
t AV [s] Q gate [nC]
34
V GS
32 Qg
30
V BR(DSS) [V]
28
26
V g s(th)
24
22 Q g(th) Q sw Q g ate
Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [C]
PG-TDSON-8: Outline
Footprint
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
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