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POWER ELECTRONICS
PART A
UNIT 1:
Power Semiconductor Devices:
Introduction to semiconductors, Power Electronics, Power semiconductor devices, Control
Characteristics. Types of power electronic converters and industrial applicationsDrives,
Electrolysis, Heating, Welding, Static Compensators, SMPS, HVDC power transmission,
Thyristorized tapped changers and Circuit breakers.
7 hours
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UNIT 2:
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Power Transistors: Power BJTs switching characteristics, switching limits, base drive
control. Power MOSFETs and IGBTs characteristics, gate drive , di/dt and dv/dt
s.
limitations. Isolation of gate and base drives. Simple design of gate and base drives.
6 Hours
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UNIT 3:
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Thyristors
Introduction, Two Transistor Model, characteristicsstatic and dynamic. di/dt and dv/dt
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protection. Thyristor types. Series and parallel operation of Thyristors. Thyristor firing
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circuits. Simple design of firing circuits using UJT, opamps, and digital ICs.
7 Hours
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UNIT 4:
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PART B
UNIT 5:
Controlled Rectifiers: Introduction. Principle of phase controlled converter operation.
Single phase semiconverters. Full converters. Threephase halfwave converters. Three
phase fullwave converters. 7 Hours
UNIT 6:
Choppers: Introduction. Principle of stepdown and stepup chopper with RL load.
Performance parameters. Chopper classification. Analysis of impulse commutated thyristor
chopper (only qualitative analysis) 6 Hours
UNIT 7:
Inverters: Introduction. Principle of operation. Performance parameters. Singlephase
bridge inverters. Threephase inverters. Voltage control of singlephase inverters single
pulse width, multiple pulse width, and sinusoidal pulse width modulation. Current source
inverters. Variable D.C. link inverter. 7 Hours
1
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UNIT 8:
(a)AC Voltage Controllers: Introduction. Principle of ONOFF and phase control. Single
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phase, bidirectional controllers with resistive and inductive loads.
(b) Electromagnetic Compatibility: Introduction, effect of power electronic converters and
remedial measures.
s. 6 Hours
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Text Book:
1. Power Electronics, M.H.Rashid, , Pearson, 3rd Edition, 2006.
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2. Power Electronics, M.D. Singh and Khanchandani K.B., T.M.H., 2nd Edition,2001
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References
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2. Thyristorised Power Controllers, G.K. Dubey, S.R. Doradla, A. Joshi and R.M.K.
Sinha, New Age International Publishers.
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Undeland, and William P. Robins, Third Edition, John Wiley and Sons,2008.
4. Power Electronics: A Simplified Approach, R.S. Ananda Murthy and V. Nattarasu,
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INDEX SHEET
UNIT TOPIC PAGE NO.
UNIT 1: INTRODUCTION 01
1.1 Brief History of Power Electronics 01
1.2 Power Electronic Application 01
1.3 Power Semiconductor Devices 02
1.4 Control Characteristics Of Power Devices 06
1.5 Types of Power Converters or Types of Power Electronic Circuits 08
1.6 Peripheral Effects 13
UNIT2: POWER TRANSISTOR 19
2.1 19
Bipolar Junction Transistors
2.2 Transistor as a Switch 23
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2.3 Transient Model of BJT 28
2.4 32
Switching Limits
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2.5 39
Power MOSFETS s
2.6 44
Switching Characteristics
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2.7 IGBT 47
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3.3 61
Quantitative Analysis
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3.4 63
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3.8 75
UJT Relaxation Oscillator
3.9 Synchronized UJT Oscillator 80
84
dv
3.10 Protection
dt
87
di
3.11 Protection
dt
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5.4 Complementary Commutation 154
5.5 Impulse Commutation 158
5.6 External Pulse Commutation 165
UNIT6 AC VOLTAGE CONTROLLER
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6.1 Phase Control 168
6.2 Type of Ac Voltage Controllers 169
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6.3 Principle of OnOff Control Technique (Integral Cycle Control 170
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6.5 188
Controller with Resistive Load
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UNIT1
INTRODUCTION TO POWER ELECTRONICS
Power Electronics is a field which combines Power (electric power), Electronics and
Control systems.
Power engineering deals with the static and rotating power equipment for the generation,
transmission and distribution of electric power.
Electronics deals with the study of solid state semiconductor power devices and circuits for
Power conversion to meet the desired control objectives (to control the output voltage and
output power).
Power electronics may be defined as the subject of applications of solid state power
semiconductor devices (Thyristors) for the control and conversion of electric power.
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1.1 Brief History of Power Electronics
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The first Power Electronic Device developed was the Mercury Arc Rectifier during
s.
the year 1900. Then the other Power devices like metal tank rectifier, grid controlled vacuum
tube rectifier, ignitron, phanotron, thyratron and magnetic amplifier, were developed & used
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gradually for power control applications until 1950.
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The first SCR (silicon controlled rectifier) or Thyristor was invented and developed by Bell
Labs in 1956 which was the first PNPN triggering transistor.
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The second electronic revolution began in the year 1958 with the development of the
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commercial grade Thyristor by the General Electric Company (GE). Thus the new era of
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power electronics was born. After that many different types of power semiconductor devices
& power conversion techniques have been introduced.The power electronics revolution is
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giving us the ability to convert, shape and control large amounts of power.
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4. AEROSPACE APPLICATIONS
Space shuttle power supply systems, satellite power systems, aircraft power systems.
5. TELECOMMUNICATIONS
Battery chargers, power supplies (DC and UPS), mobile cell phone battery chargers.
6. TRANSPORTATION
Traction control of electric vehicles, battery chargers for electric vehicles, electric
locomotives, street cars, trolley buses, automobile electronics including engine controls.
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A. POWER DIODES
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Power diodes are made of silicon pn junction with two terminals, anode and cathode.
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Diode is forward biased when anode is made positive with respect to the cathode. Diode
conducts fully when the diode voltage is more than the cutin voltage (0.7 V for Si).
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Diode is reverse biased when cathode is made positive with respect to anode. When reverse
biased, a small reverse current known as leakage current flows. This leakage current
increases with increase in magnitude of reverse voltage until avalanche voltage is reached
(breakdown voltage).
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General purpose diodes.
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High speed (fast recovery) diodes.
Schottky diode. s.
General Purpose Diodes
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The diodes have high reverse recovery time of about 25 microsecs (sec). They are
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used in low speed (frequency) applications. e.g., line commutated converters, diode rectifiers
and converters for a low input frequency upto 1 KHz. Diode ratings cover a very wide range
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with current ratings less than 1 A to several thousand amps (2000 A) and with voltage ratings
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from 50 V to 5 KV. These diodes are generally manufactured by diffusion process. Alloyed
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type rectifier diodes are used in welding power supplies. They are most cost effective and
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The diodes have low recovery time, generally less than 5 s. The major field of
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applications is in electrical power conversion i.e., in freewheeling acdc and dcac converter
circuits. Their current ratings is from less than 1 A to hundreds of amperes with voltage
ratings from 50 V to about 3 KV. Use of fast recovery diodes are preferable for freewheeling
in SCR circuits because of low recovery loss, lower junction temperature and reduced di dt .
For high voltage ratings greater than 400 V they are manufactured by diffusion process and
the recovery time is controlled by platinum or gold diffusion. For less than 400 V rating
epitaxial diodes provide faster switching speeds than diffused diodes. Epitaxial diodes have a
very narrow base width resulting in a fast recovery time of about 50 ns.
Schottky Diodes
A Schottky diode has metal (aluminium) and semiconductor junction. A layer of
metal is deposited on a thin epitaxial layer of the ntype silicon. In Schottky diode there is a
larger barrier for electron flow from metal to semiconductor. Figure shows the schotty diode.
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When Schottky diode is forward biased free electrons on nside gain enough energy to flow
into the metal causing forward current. Since the metal does not have any holes there is no
charge storage, decreasing the recovery time. Therefore a Schottky diode can switchoff
faster than an ordinary pn junction diode. A Schottky diode has a relatively low forward
voltage drop and reverse recovery losses. The leakage current is higher than a pn junction
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diode. The maximum allowable voltage is about 100 V. Current ratings vary from about 1 to
300 A. They are mostly used in low voltage and high current dc power supplies. The
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operating frequency may be as high 100300 kHz as the device is suitable for high frequency
application.
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Comparison Between Different Types Of Diodes
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Turn off time  High Turn off time  Low Turn off time Extremely
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low
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B. Thyristors
Silicon Controlled Rectifiers (SCR):
The SCR has 3 terminals namely:
Anode (A), Cathode (k) and Gate(G).
Internally it is having 4layers pnpn as shown in figure (b).
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Forcedcommutated Thyristors (Inverter grade Thyristors)
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Linecommutated Thyristors (convertergrade Thyristors)
Gateturn off Thyristors (GTO). s.
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Reverse conducting Thyristors (RCTs).
Static Induction Thyristors (SITH).
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C. POWER TRANSISTORS
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Transistors which have high voltage and high current rating are called power
transistors. Power transistors used as switching elements, are operated in saturation region
resulting in a low  on state voltage drop. Switching speed of transistors is much higher than
the thyristors. And they are extensively used in dcdc and dcac converters with inverse
parallel connected diodes to provide bidirectional current flow. However, voltage and
current ratings of power transistor are much lower than the thyristors. Transistors are used in
low to medium power applications. Transistors are current controlled device and to keep it in
the conducting state, a continuous base current is required.
Power transistors are classified as follows
BiPolar Junction Transistors (BJTs)
MetalOxide SemiConductor Field Effect Transistors (MOSFETs)
Insulated Gate BiPolar Transistors (IGBTs)
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Uncontrolled turn on and turn off (e.g.: diode).
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Controlled turn on and uncontrolled turn off (e.g. SCR)
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Controlled turn on and off characteristics (e.g. BJT, MOSFET, GTO, SITH,
IGBT, SIT, MCT).
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MCT).
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For the control of electric power supplied to the load or the equipment/machinery or
for power conditioning the conversion of electric power from one form to other is necessary
and the switching characteristic of power semiconductor devices (Thyristors) facilitate these
conversions.
The thyristorised power converters are referred to as the static power converters and
they perform the function of power conversion by converting the available input power
supply in to output power of desired form.
The different types of thyristor power converters are
Diode rectifiers (uncontrolled rectifiers).
Line commutated converters or AC to DC converters (controlled rectifiers)
AC voltage (RMS voltage) controllers (AC to AC converters).
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Cyclo converters (AC to AC converters at low output frequency).
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DC choppers (DC to DC converters).
Inverters (DC to AC converters).
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1. AC TO DC Converters (Rectifiers)
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AC Line DC Output
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Input Commutated
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V0(QC)
Voltage Converter
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converters. These are also referred to as controlled rectifiers. The line commutated converters
(controlled rectifiers) are used to convert a fixed voltage, fixed frequency AC power supply
to obtain a variable DC output voltage. They use natural or AC line commutation of the
Thyristors.
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Fig1.4: A Single Phase Full Wave Uncontrolled Rectifier Circuit (Diode Full Wave Rectifier) using a
Center Tapped Transformer
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Fig: 1.5 A Single Phase Full Wave Controlled Rectifier Circuit (using SCRs) using a Center Tapped
Transformer
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UPS.
HVDC transmission.
Battery Chargers.
2. a. AC TO AC Converters or AC regulators.
V0(RMS)
AC Vs AC Variable AC
Input Voltage RMSO/P Voltage
Voltage fs Controller
fs fS
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The AC voltage controllers convert the constant frequency, fixed voltage AC supply into
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variable AC voltage at the same frequency using line commutation.
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AC regulators (RMS voltage controllers) are mainly used for
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Speed control of AC motor.
Speed control of fans (domestic and industrial fans).
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AC pumps.
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Fig.1.6: A Single Phase AC voltage Controller Circuit (ACAC Converter using a TRIAC)
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V0 , f0
AC Vs Variable Frequency
Input Cyclo
Converters AC Output
Voltage fs
f0< fS
The cyclo converters convert power from a fixed voltage fixed frequency AC supply to a
variable frequency and variable AC voltage at the output.
The cyclo converters generally produce output AC voltage at a lower output frequency. That
is output frequency of the AC output is less than input AC supply frequency.
Applications of cyclo converters are traction vehicles and gearless rotary kilns.
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3. CHOPPERS or DC TO DC Converters
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+ V0(dc )
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+
DC Variable DC
Vs
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The choppers are power circuits which obtain power from a fixed voltage DC supply and
convert it into a variable DC voltage. They are also called as DC choppers or DC to DC
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converters. Choppers employ forced commutation to turn off the Thyristors. DC choppers are
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further classified into several types depending on the direction of power flow and the type of
commutation. DC choppers are widely used in
Speed control of DC motors from a DC supply.
DC drives for suburban traction.
Switching power supplies.
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4. INVERTERS or DC TO AC Converters
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DC Inverter AC
Supply (Forced Output Voltage
 Commutation)
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The inverters are used for converting DC power from a fixed voltage DC supply into an AC
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output voltage of variable frequency and fixed or variable output AC voltage. The inverters
also employ force commutation method to turn off the Thyristors.
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Uninterrupted power supplies (UPS system) used for computers, computer labs.
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1.6 Peripheral Effects
s.
The power converter operations are based mainly on the switching of power
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semiconductor devices and as a result the power converters introduce current and voltage
harmonics (unwanted AC signal components) into the supply system and on the output of the
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converters.
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These induced harmonics can cause problems of distortion of the output voltage, harmonic
generation into the supply system, and interference with the communication and signaling
circuits. It is normally necessary to introduce filters on the input side and output side of a
power converter system so as to reduce the harmonic level to an acceptable magnitude. The
figure below shows the block diagram of a generalized power converter with filters added.
The application of power electronics to supply the sensitive electronic loads poses a
challenge on the power quality issues and raises the problems and concerns to be resolved by
the researchers. The input and output quantities of power converters could be either AC or
DC. Factors such as total harmonic distortion (THD), displacement factor or harmonic factor
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(HF), and input power factor (IPF), are measures of the quality of the waveforms. To
determine these factors it is required to find the harmonic content of the waveforms. To
evaluate the performance of a converter, the input and output voltages/currents of a converter
are expressed in Fourier series. The quality of a power converter is judged by the quality of
its voltage and current waveforms.
The control strategy for the power converters plays an important part on the harmonic
generation and the output waveform distortion and can be aimed to minimize or reduce these
problems. The power converters can cause radio frequency interference due to
electromagnetic radiation and the gating circuits may generate erroneous signals. This
interference can be avoided by proper grounding and shielding.
Recommended questions:
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1. State important applications of power electronics
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2. What is a static power converter? Name the different types of power converters and
mention their functions.
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3. Give the list of power electronic circuits of different input / output requirements.
4. What are the peripheral effects of power electronic equipments? What are the remedies
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for them?
5. What are the peripheral effects of power electronic equipments? What are the remedies
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for them?
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UNIT2
POWER TRANSISTORS
Power transistors are devices that have controlled turnon and turnoff characteristics.
These devices are used a switching devices and are operated in the saturation region resulting
in low onstate voltage drop. They are turned on when a current signal is given to base or
control terminal. The transistor remains on so long as the control signal is present. The
switching speed of modern transistors is much higher than that of Thyristors and are used
extensively in dcdc and dcac converters. However their voltage and current ratings are
lower than those of thyristors and are therefore used in low to medium power applications.
Power transistors are classified as follows
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Bipolar junction transistors(BJTs)
Metaloxide semiconductor filedeffect transistors(MOSFETs)
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Static Induction transistors(SITs)
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Insulatedgate bipolar transistors(IGBTs)
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The need for a large blocking voltage in the off state and a high current carrying
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capability in the on state means that a power BJT must have substantially different structure
than its small signal equivalent. The modified structure leads to significant differences in the
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IV characteristics and switching behavior between power transistors and its logic level
counterpart.
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Collector Collector
Emitter Emitter
Base Emitter
10 m n
+
10
19
cm
3
Base 520m 16 3
Thickness p 10 cm
50200m n
10
14
cm
3
(Collector drift
region)
+ 19 3
250m n 10 cm
Collector
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A power transistor is a vertically oriented four layer structure of alternating ptype and n
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type. The vertical structure is preferred because it maximizes the cross sectional area and
through which the current in the device is flowing. This also minimizes onstate resistance
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and thus power dissipation in the transistor.
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The doping of emitter layer and collector layer is quite large typically 1019 cm3. A special
layer called the collector drift region (n) has a light doping level of 1014.
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The thickness of the drift region determines the breakdown voltage of the transistor. The base
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however if the base thickness is small the breakdown voltage capability of the transistor is
compromised.
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Figure 3(a) shows the circuit to obtain the steady state characteristics. Fig 3(b) shows
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the input characteristics of the transistor which is a plot of I B versus VBE . Fig 3(c) shows the
output characteristics of the transistor which is a plot I C versus VCE . The characteristics
shown are that for a signal level transistor.
The power transistor has steady state characteristics almost similar to signal level transistors
except that the VI characteristics has a region of quasi saturation as shown by figure 4.
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There are four regions clearly shown: Cutoff region, Active region, quasi saturation
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and hard saturation. The cutoff region is the area where base current is almost zero. Hence no
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collector current flows and transistor is off. In the quasi saturation and hard saturation, the
base drive is applied and transistor is said to be on. Hence collector current flows depending
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Quasisaturation
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Hard  1/Rd
Saturation
Second breakdown
iC
IB5>IB4,etc.
IB5
IB4
IB2
IB1
I B<0
IB=0
IB=0
0
BVCEO vCE
BVSUS BVCBO
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The power BJT is never operated in the active region (i.e. as an amplifier) it is always
operated between cutoff and saturation. The B V SU S is the maximum collector to emitter
voltage that can be sustained when BJT is carrying substantial collector current. The BVCEO is
the maximum collector to emitter breakdown voltage that can be sustained when base current
is zero and BVCBO is the collector base breakdown voltage when the emitter is open circuited.
The primary breakdown shown takes place because of avalanche breakdown of collector base
junction. Large power dissipation normally leads to primary breakdown.
The second breakdown shown is due to localized thermal runaway.
Transfer Characteristics
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I E = IC + I B
IC
= h fE =
IB
I C = I B + I CEO
=
+1
=
1
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V B V BE
IB =
RB
VC = VCE = VCC I C RC
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VC = VCC
RC (V B V BE )
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RB
VCE = VCB + V BE
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Equation (1) shows that as long as VCE > VBE the CBJ is reverse biased and transistor is in
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active region, The maximum collector current in the active region, which can be obtained by
setting VCB = 0 and VBE = VCE is given as
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VCC VCE I CM
I CM = I BM =
F
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RC
If the base current is increased above I BM , VBE increases, the collector current increases and
VCE falls below VBE . This continues until the CBJ is forward biased with VBC of about 0.4 to
0.5V, the transistor than goes into saturation. The transistor saturation may be defined as the
point above which any increase in the base current does not increase the collector current
significantly.
In saturation, the collector current remains almost constant. If the collector emitter voltage is
VCE ( sat ) the collector current is
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VCC VCESAT
I CS =
RC
I CS
I BS =
Normally the circuit is designed so that I B is higher that I BS . The ratio of I B to I BS is called
to overdrive factor ODF.
IB
ODF =
I BS
I CS
forced =
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IB
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The total power loss in the two functions is
PT = VBE I B + VCE I C
s.
A high value of ODF cannot reduce the CE voltage significantly. However VBE increases due
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to increased base current resulting in increased power loss. Once the transistor is saturated,
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the CE voltage is not reduced in relation to increase in base current. However the power is
increased at a high value of ODF, the transistor may be damaged due to thermal runaway. On
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the other hand if the transistor is under driven ( I B < I BS ) it may operate in active region,
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Problems
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1. The BJT is specified to have a range of 8 to 40. The load resistance in Re = 11 . The
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dc supply voltage is VCC=200V and the input voltage to the base circuit is VB=10V. If
VCE(sat)=1.0V and VBE(sat)=1.5V. Find
a. The value of RB that results in saturation with a overdrive factor of 5.
b. The forced f .
c. The power loss PT in the transistor.
Solution
VCC VCE ( sat ) 200 1.0
(a) I CS = = = 18.1A
RC 11
I CS 18.1
Therefore I BS = = = 2.2625 A
min 8
Therefore I B = ODF I BS = 11.3125 A
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VB VBE ( sat )
IB =
RB
VB VBE ( sat ) 10 1.5
Therefore RB = = = 0.715
IB 11.3125
I CS 18.1
(b) Therefore f = = = 1.6
I B 11.3125
PT = VBE I B + VCE I C
(c) PT = 1.5 11.3125 + 1.0 18.1
PT = 16.97 + 18.1 = 35.07W
2. The of a bipolar transistor varies from 12 to 75. The load resistance is RC = 1.5 .
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The dc supply voltage is VCC=40V and the input voltage base circuit is VB=6V. If
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VCE(sat)=1.2V, VBE(sat)=1.6V and RB=0.7 determine
a. The overdrive factor ODF.
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b. The forced f.
c. Power loss in transistor PT
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Solution
VCC VCE ( sat )
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40 1.2
I CS = = = 25.86 A
RC 1.5
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I CS 25.86
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I BS = = = 2.15 A
min 12
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Also
RB 0.7
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I B 6.28
(a) Therefore ODF = = = 2.92
I BS 2.15
I CS 25.86
Forced f = = = 4.11
IB 6.28
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VB = 10V , RB = 0.75,
VBE ( sat ) = 1.5V , RC = 11,
VCE ( sat ) = 1V , VCC = 200V
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Solution
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VB VBE ( sat ) 10 1.5
(i) IB = = = 11.33 A
s.
RB 0.75
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VCC VCE ( sat ) 200 1.0
I CS = = = 18.09 A
RC 11
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I CS 18.09
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Therefore I BS = = = 2.26 A
min 8
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I CS 18.09
f = = = 1.6
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I B 11.33
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I B 11.33
(ii) ODF = = = 5.01
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I BS 2.26
4. A simple transistor switch is used to connect a 24V DC supply across a relay coil,
which has a DC resistance of 200. An input pulse of 0 to 5V amplitude is applied
through series base resistor RB at the base so as to turn on the transistor switch.
Sketch the device current waveform with reference to the input pulse.
Calculate
a. I CS .
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c. Total power dissipation in the transistor that occurs during the saturation state.
+ VCC=24V
200
D
Relay
Coil
RB
I/P =25 to 100
5V VCE(sat)=0.2V
VBE(sat)=0.7V
0
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vB
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0 t
b
iC
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ICS
=L/RL
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t
iL
=L/RL+Rf
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=L/RL
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Solution
To sketch the device current waveforms; current through the device cannot
rise fast to the saturating level of I CS since the inductive nature of the coil opposes any
change in current through it. Rate of rise of collector current can be determined by the
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time constant 1 = . Where L is inductive in Henry of coil and R is resistance of coil.
R
Once steady state value of I CS is reached the coil acts as a short circuit. The collector
current stays put at I CS till the base pulse is present.
Similarly once input pulse drops to zero, the current I C does not fall to zero
immediately since inductor will now act as a current source. This current will now
decay at the fall to zero. Also the current has an alternate path and now can flow
through the diode.
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(ii) Value of RB
I CS 0.119
I BS = = = 4.76mA
min 25
I B = ODF I BS = 2 4.76 = 9.52mA
VB VBE ( sat ) 5 0.7
RB = = = 450
IB 9.52
om
(iii) PT = VBE ( sat ) I B + VCE ( sat ) I CS = 0.7 9.52 + 0.2 0.119 = 6.68W
c
Switching Characteristics s.
A forward biased pn junction exhibits two parallel capacitances; a depletion layer
bu
capacitance and a diffusion capacitance. On the other hand, a reverse biased pn junction has
only depletion capacitance. Under steady state the capacitances do not play any role.
la
However under transient conditions, they influence turnon and turnoff behavior of the
yl
transistor.
l ls
.a
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m
co
Fig. 2.7: Switching Times of BJT
s.
Due to internal capacitances, the transistor does not turn on instantly. As the voltage
VB rises from zero to V1 and the base current rises to IB1, the collector current does not
bu
respond immediately. There is a delay known as delay time td, before any collector current
flows. The delay is due to the time required to charge up the BEJ to the forward bias voltage
la
VBE(0.7V). The collector current rises to the steady value of ICS and this time is called rise
yl
time tr.
lls
The base current is normally more than that required to saturate the transistor. As a result
excess minority carrier charge is stored in the base region. The higher the ODF, the greater is
.a
the amount of extra charge stored in the base. This extra charge which is called the saturating
w
This extra charge which is called the saturating charge is proportional to the excess base
drive and the corresponding current Ie.
w
I CS
Ie = I B = ODF .I BS I BS = I BS ( ODF 1)
Saturating charge QS = s I e = s I BS (ODF 1) where s is known as the storage time constant.
When the input voltage is reversed from V1 to V2, the reverse current IB2 helps to discharge
the base. Without IB2 the saturating charge has to be removed entirely due to recombination
and the storage time ts would be longer.
Once the extra charge is removed, BEJ charges to the input voltage V2 and the base current
falls to zero. tf depends on the time constant which is determined by the reverse biased BEJ
capacitance.
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ton = td + tr
toff = ts + t f
Problems
1. For a power transistor, typical switching waveforms are shown. The various
parameters of the transistor circuit are as under Vcc = 220V , VCE ( sat ) = 2V , I CS = 80 A ,
td = 0.4 s , tr = 1 s , tn = 50 s , t s = 3 s , t f = 2 s , t0 = 40 s , f = 5 Khz ,
I CEO = 2mA . Determine average power loss due to collector current during ton and tn.
Find also the peak instantaneous power loss, due to collector current during turnon
time.
m
Solution
co
During delay time, the time limits are 0 t td . Figure shows that in this time
ic ( t ) = ICEO and VCE ( t ) = VCC . Therefore instantaneous power loss during delay time is
s.
Pd ( t ) = iCVCE = ICEOVCC = 2 x103 x 220 = 0.44W
bu
Average power loss during delay time 0 t td is given by
la
td
1
Pd = ic ( t ) vCE ( t ) dt
yl
T 0
lls
td
1
T 0
Pd = I CEOVCC dt
.a
Pd = f .I CEOVCC td
w
V V
vCE ( t ) = VCC CC CE ( sat ) t
tr
t
vCE ( t ) = VCC + VCE ( sat ) VCC
t r
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t
t
Pr =
1 r I CS
T 0 tr
(
t VCC + VCE ( sat ) VCC dt
tr
)
V V V
Pr = f .I CS tr CC CC CES
2 3
220 220 2
Pr = 5 x103 80 1106 = 14.933W
2 3
Instantaneous power loss during rise time is
I CS V V ( sat )
Pr ( t ) = t VCC CC CE t
tr tr
I CS I 2
Pr ( t ) = tVCC CSt2 VCC VCE ( sat )
tr tr
m
Differentiating the above equation and equating it to zero will give the time tm at
co
which instantaneous power loss during tr would be maximum.
dPr ( t ) I CSVCC I CS 2t
s.
2 [VCC VCEsat ]
bu
Therefore =
dt tr tr
la
dPr ( t )
At t = tm , =0
yl
dt
lls
I CS 2I t
Therefore 0= VCC CS2 m VCC VCE ( sat )
tr tr
.a
I CS 2I t
Vcc = CS2 m VCC VCE ( sat )
w
tr tr
w
trVCC
= tm VCC VCE ( sat )
w
2
trVCC
Therefore tm =
2 VCC VCE ( sat )
Peak instantaneous power loss Prm during rise time is obtained by substituting the
value of t=tm in equation (1) we get
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80 220 2
Prm = = 4440.4W
4 [ 220 2]
m
Pn ( t ) = iC vCE = I CSVCE ( sat ) = 80 x 2 = 160W
co
Average power loss during conduction period is
t
1 n s.
Pn = iC vCE dt = fI CSVCES tn = 5 103 80 2 50 106 = 40W
T 0
bu
la
1. Second Breakdown
lls
It is a destructive phenomenon that results from the current flow to a small portion of
the base, producing localized hot spots. If the energy in these hot spots is sufficient the
.a
excessive localized heating may damage the transistor. Thus secondary breakdown is caused
w
phenomenon.
w
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The dc FBSOA is shown as shaded area and the expansion of the area for pulsed
m
operation of the BJT with shorter switching times which leads to larger FBSOA. The second
co
break down boundary represents the maximum permissible combinations of voltage and
current without getting into the region of ic vce plane where second breakdown may occur.
s.
The final portion of the boundary of the FBSOA is breakdown voltage limit BVCEO .
bu
3. Reverse Biased Safe Operating Area RBSOA
la
During turnoff, a high current and high voltage must be sustained by the transistor, in
most cases with the baseemitter junction reverse biased. The collector emitter voltage must
yl
be held to a safe level at or below a specified value of collector current. The manufacturer
ls
provide I c Vce limits during reversebiased turn off as reverse biased safe area (RBSOA).
l
.a
iC
w
ICM
w
w
VBE(off)<0
VBE(off)=0
vCE
BVCEO
BVCBO
Fig.2.8: RBSOA of a Power BJT
The area encompassed by the RBSOA is somewhat larger than FBSOA because of the
extension of the area of higher voltages than BVCEO upto BVCBO at low collector currents.
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This operation of the transistor upto higher voltage is possible because the combination of
low collector current and reverse base current has made the beta so small that break down
voltage rises towards BVCBO .
4. Power Derating
The thermal equivalent is shown. If the total average power loss is PT ,
The case temperature is Tc = T j PT T jc .
om
0
RSA : Thermal resistance from sink to ambient C
.
c
The maximum power dissipation in PT is specified at TC = 250 C .
s.
bu
la
yl
l ls
5. Breakdown Voltages
w
A break down voltage is defined as the absolute maximum voltage between two
w
terminals with the third terminal open, shorted or biased in either forward or reverse
direction.
BVSUS : The maximum voltage between the collector and emitter that can be sustained across
the transistor when it is carrying substantial collector current.
BVCEO : The maximum voltage between the collector and emitter terminal with base open
circuited.
BVCBO : This is the collector to base break down voltage when emitter is open circuited.
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I
on, F = CS [ forced ] resulting in low forces at the beginning. After turn on, F can
IB
be increased to a sufficiently high value to maintain the transistor in quasisaturation region.
toff can be reduced by reversing base current and allowing base current peaking during turn
off since increasing I B 2 decreases storage time.
IBS
0 t
m
IB2
co
Fig.2.10: Base Drive Current Waveform
Some common types of optimizing base drive of transistor are
s.
Turnon Control.
bu
Turnoff Control.
la
Antisaturation Control
lls
TurnOn Control
.a
w
w
w
When input voltage is turned on, the base current is limited by resistor R1 and
V1 VBE V V
therefore initial value of base current is I BO = , I BF = 1 BE .
R1 R1 + R2
R2
Capacitor voltage VC = V1 .
R1 + R2
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R1 R2
Therefore 1 = C1
R1 + R2
Once input voltage vB becomes zero, the baseemitter junction is reverse biased and C1
discharges through R2. The discharging time constant is 2 = R2C1 . To allow sufficient
charging and discharging time, the width of base pulse must be t1 5 1 and off period of the
1 1 0.2
pulse must be t2 5 2 .The maximum switching frequency is f s = = = .
T t1 + t2 1 + 2
TurnOff Control
If the input voltage is changed to during turnoff the capacitor voltage VC is added to
V2 as reverse voltage across the transistor. There will be base current peaking during turn off.
om
As the capacitor C1 discharges, the reverse voltage will be reduced to a steady state value,
V2 . If different turnon and turnoff characteristics are required, a turnoff circuit using
c
( C2 , R3 & R4 ) may be added. The diode D1 isolates the forward base drive circuit from the
reverse base drive circuit during turn off.
s.
bu
la
yl
l ls
.a
w
w
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and additional arrangement is necessary to discharge capacitor C1 and reset the transformer
core during turnoff of the power transistor.
Antisaturation Control
m
co
s.
bu
la
yl
lls
.a
If a transistor is driven hard, the storage time which is proportional to the base current
increases and the switching speed is reduced. The storage time can be reduced by operating
w
the transistor in soft saturation rather than hard saturation. This can be accomplished by
clamping CE voltage to a predetermined level and the collector current is given by
V VCM
I C = CC .
RC
Where VCM is the clamping voltage and VCM > VCE ( sat ) .
The base current which is adequate to drive the transistor hard, can be found from
V VD1 VBE
I B = I1 = B and the corresponding collector current is I C = I L = I B .
RB
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This means that the CE voltage is raised above saturation level and there are no excess
carriers in the base and storage time is reduced.
For clamping, VD1 > VD2 and this can be accomplished by connecting two or more
m
diodes in place of D1 . The load resistance RC should satisfy the condition I B > I L ,
co
I B RC > (VCC VBE VD + VD ) .
1 2
s.
The clamping action thus results a reduced collector current and almost elimination of
bu
the storage time. At the same time, a fast turnon is accomplished.
la
However, due to increased VCE , the onstate power dissipation in the transistor is
increased, whereas the switching power loss is decreased.
yl
ADVANTAGES OF BJTS
lls
BJTs have high switching frequencies since their turnon and turnoff time is low.
.a
BJT has controlled turnon and turnoff characteristics since base drive control is
w
possible.
w
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Construction
m
co
s.
Fig.2.15 Symbol of nchannel depletion type MOSFET
bu
It consists of a highly doped ptype substrate into which two blocks of heavily doped
ntype material are diffused to form a source and drain. A nchannel is formed by diffusing
la
between source and drain. A thin layer of SiO2 is grown over the entire surface and holes are
yl
cut in SiO2 to make contact with ntype blocks. The gate is also connected to a metal contact
lls
surface but remains insulated from the nchannel by the SiO2 layer. SiO2 layer results in an
extremely high input impedance of the order of 1010 to 1015 for this area.
.a
w
w
w
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Operation
When VGS = 0V and VDS is applied and current flows from drain to source similar to
JFET. When VGS = 1V , the negative potential will tend to pressure electrons towards the p
type substrate and attracts hole from ptype substrate. Therefore recombination occurs and
will reduce the number of free electrons in the nchannel for conduction. Therefore with
increased negative gate voltage I D reduces.
For positive values, Vgs , additional electrons from psubstrate will flow into the channel and
establish new carriers which will result in an increase in drain current with positive gate
voltage.
Drain Characteristics
m
co
s.
bu
la
yl
l ls
.a
w
w
Transfer Characteristics
w
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Basic Construction
A slab of ptype material is formed and two nregions are formed in the substrate. The source
and drain terminals are connected through metallic contacts to ndoped regions, but the
absence of a channel between the doped nregions. The SiO2 layer is still present to isolate
the gate metallic platform from the region between drain and source, but now it is separated
by a section of ptype material.
m
co
s.
bu
la
yl
ls
Operation
w
If VGS = 0V and a voltage is applied between the drain and source, the absence of a
w
nchannel will result in a current of effectively zero amperes. With VDS set at some positive
voltage and VGS set at 0V, there are two reverse biased pn junction between the ndoped
regions and p substrate to oppose any significant flow between drain and source.
If both VDS and VGS have been set at some positive voltage, then positive potential at the gate
will pressure the holes in the psubstrate along the edge of SiO2 layer to leave the area and
enter deeper region of psubstrate. However the electrons in the psubstrate will be attracted
to the positive gate and accumulate in the region near the surface of the SiO2 layer. The
negative carriers will not be absorbed due to insulating SiO2 layer, forming an inversion
layer which results in current flow from drain to source.
The level of VGS that result in significant increase in drain current is called threshold
voltage VT . As VGS increases the density of free carriers will increase resulting in increased
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level of drain current. If VGS is constant VDS is increased; the drain current will eventually
reach a saturation level as occurred in JFET.
Drain Characteristics
m
co
s.
bu
Transfer Characteristics
la
yl
lls
.a
w
w
w
Power MOSFETS
Power MOSFETs are generally of enhancement type only. This MOSFET is turned
ON when a voltage is applied between gate and source. The MOSFET can be turned OFF
by removing the gate to source voltage. Thus gate has control over the conduction of the
MOSFET. The turnon and turnoff times of MOSFETs are very small. Hence they operate
at very high frequencies; hence MOSFETs are preferred in applications such as choppers
and inverters. Since only voltage drive (gatesource) is required, the drive circuits of
MOSFET are very simple. The paralleling of MOSFETs is easier due to their positive
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temperature coefficient. But MOSFTSs have high onstate resistance hence for higher
currents; losses in the MOSFETs are substantially increased. Hence MOSFETs are used for
low power applications.
V GS
Load
 +
+  +
 +
 +
 +
 +

+     +
n + + n
n n J3
 
p p
VDD  
n n
+ +
n
m
n substrate
co
Current path Metal layer
Drain
Construction
s.
bu
Power MOSFETs have additional features to handle larger powers. On the
la
determines the voltage blocking capability of the device. On the other side of n + substrate, a
yl
metal layer is deposited to form the drain terminal. Now p regions are diffused in the
lls
epitaxially grown n layer. Further n + regions are diffused in the p regions as shown.
.a
SiO2 layer is added, which is then etched so as to fit metallic source and gate terminals.
w
When gate circuit voltage is zero and VDD is present, n + p junctions are reverse biased and
no current flows from drain to source. When gate terminal is made positive with respect to
source, an electric field is established and electrons from n channel in the p regions.
Therefore a current from drain to source is established.
Power MOSFET conduction is due to majority carriers therefore time delays caused by
removal of recombination of minority carriers is removed.
Because of the drift region the ON state drop of MOSFET increases. The thickness of the
drift region determines the breakdown voltage of MOSFET. As seen a parasitic BJT is
formed, since emitter base is shorted to source it does not conduct.
2.6 Switching Characteristics
The switching model of MOSFETs is as shown in the figure 6(a). The various inter
electrode capacitance of the MOSFET which cannot be ignored during high frequency
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switching are represented by C gs , C gd & Cds . The switching waveforms are as shown in figure
7. The turn on time t d is the time that is required to charge the input capacitance to the
threshold voltage level. The rise time tr is the gate charging time from this threshold level to
the full gate voltage Vgsp . The turn off delay time tdoff is the time required for the input
capacitance to discharge from overdriving the voltage V1 to the pinch off region. The fall
time is the time required for the input capacitance to discharge from pinch off region to the
threshold voltage. Thus basically switching ON and OFF depend on the charging time of the
input gate capacitance.
m
co
s.
bu
la
yl
l ls
.a
w
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The turnon time can be reduced by connecting a RC circuit as shown to charge the
capacitance faster. When the gate voltage is turned on, the initial charging current of the
capacitance is
VG
IG = .
RS
The steady state value of gate voltage is
RGVG
VGS = .
RS + R1 + RG
Where RS is the internal resistance of gate drive force.
ID
m
RD
C1
co
Gate Signal
+
RS VDD
+ s. 
R1
bu
VG RG

la
C +VCC
w
ID
RD
w
NPN
M1
w
VDD +
+
VDS(on) 
 VD
Vin
PNP
VS
VD = VDD I D RD , VS = VD VDS b on g , VS VD
Fig.2.21: Fast turn on gate drive circuit 2
The above circuit is used in order to achieve switching speeds of the order of 100nsec or
less. The above circuit as low output impedance and the ability to sink and source large
currents. A totem poll arrangement that is capable of sourcing and sinking a large current is
achieved by the PNP and NPN transistors. These transistors act as emitter followers and offer
a low output impedance. These transistors operate in the linear region therefore minimize the
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delay time. The gate signal of the power MOSFET may be generated by an opamp. Let Vin
be a negative voltage and initially assume that the MOSFET is off therefore the noninverting
terminal of the opamp is at zero potential. The opamp output is high therefore the NPN
transistor is on and is a source of a large current since it is an emitter follower. This enables
the gatesource capacitance Cgs to quickly charge upto the gate voltage required to turnon the
power MOSFET. Thus high speeds are achieved. When Vin becomes positive the output of
opamp becomes negative the PNP transistor turnson and the gatesource capacitor quickly
discharges through the PNP transistor. Thus the PNP transistor acts as a current sink and the
MOSFET is quickly turnedoff. The capacitor C helps in regulating the rate of rise and fall of
the gate voltage thereby controlling the rate of rise and fall of MOSFET drain current. This
can be explained as follows
The drainsource voltage VDS = VDD I D RD .
If ID increases VDS reduces. Therefore the positive terminal of opamp which is tied
to the source terminal of the MOSFET feels this reduction and this reduction is
m
transmitted to gate through the capacitor C and the gate voltage reduces and the
co
drain current is regulated by this reduction.
Comparison of MOSFET with BJT s.
Power MOSFETS have lower switching losses but its onresistance and conduction
bu
losses are more. A BJT has higher switching loss bit lower conduction loss. So at high
frequency applications power MOSFET is the obvious choice. But at lower operating
la
MOSFET has positive temperature coefficient for resistance. This makes parallel
operation of MOSFETs easy. If a MOSFET shares increased current initially, it heats
lls
up faster, its resistance increases and this increased resistance causes this current to
shift to other devices in parallel. A BJT is a negative temperature coefficient, so
.a
2.7 IGBT
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The metal oxide semiconductor insulated gate transistor or IGBT combines the advantages of
BJTs and MOSFETs. Therefore an IGBT has high input impedance like a MOSFET and
lowon state power loss as in a BJT. Further IGBT is free from second breakdown problem
present in BJT.
m
co
VG
E G
Emitter
s. Gate Emitter
bu
Metal
Load Silicon
      
+++++++
    dioxide
la
+ +
n + + n
n n J3
yl
p p
lls
VCC 
J2

n n
J1
.a
+ +
p substrate p
w
It is constructed virtually in the same manner as a power MOSFET. However, the substrate is
now a p + layer called the collector.
When gate is positive with respect to positive with respect to emitter and with gate emitter
voltage greater than VGSTH , an n channel is formed as in case of power MOSFET. This
n channel short circuits the n region with n + emitter regions.
An electron movement in the n channel in turn causes substantial hole injection from
p + substrate layer into the epitaxially n layer. Eventually a forward current is established.
The three layers p + , n and p constitute a pnp transistor with p + as emitter, n as base and
p as collector. Also n , p and n + layers constitute a npn transistor. The MOSFET is formed
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with input gate, emitter as source and n region as drain. Equivalent circuit is as shown
below.
E G
+ + + +
G
n n S n n
D
J3
npn
p
 J2
pnp n
J1
+
p substrate
m
C
co
s.
bu
la
yl
l ls
.a
w
w
w
Also p serves as collector for pnp device and also as base for npn transistor. The two pnp and
npn is formed as shown.
When gate is applied (VGS > VGSth ) MOSFET turns on. This gives the base drive to T1 .
Therefore T1 starts conducting. The collector of T1 is base of T2 . Therefore regenerative
action takes place and large number of carriers are injected into the n drift region. This
reduces the ONstate loss of IGBT just like BJT.
When gate drive is removed IGBT is turnoff. When gate is removed the induced channel
will vanish and internal MOSFET will turnoff. Therefore T1 will turnoff it T2 turns off.
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Structure of IGBT is such that R1 is very small. If R1 small T1 will not conduct therefore
IGBTs are different from MOSFETs since resistance of drift region reduces when gate
drive is applied due to p + injecting region. Therefore ON state IGBT is very small.
m
co
Fig.2.22: IGBT bias circuit
s.
bu
Static VI characteristics ( I C versus VCE )
Same as in BJT except control is by VGE . Therefore IGBT is a voltage controlled
la
device.
yl
Applications
Widely used in medium power applications such as DC and AC motor drives, UPS systems,
Power supplies for solenoids, relays and contractors.
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Though IGBTs are more expensive than BJTs, they have lower gate drive requirements,
lower switching losses. The ratings up to 1200V, 500A.
m
co
s.
bu
During turnon, the collector rise and the di dt is
la
yl
di I L I cs
= = ...(1)
lls
dt tr tr
During turn off, the collector emitter voltage must rise in relation to the fall of the
.a
dv Vs Vcc
= =
w
...(2)
dt t f tf
The conditions di dt and dv dt in equation (1) and (2) are set by the transistor
switching characteristics and must be satisfied during turn on and turn off. Protection circuits
are normally required to keep the operating di dt and dv dt within the allowable limits of
transistor. A typical switch with di dt and dv dt protection is shown in figure (a), with
operating wave forms in figure (b). The RC network across the transistor is known as the
snubber circuit or snubber and limits the dv dt . The inductor LS , which limits the di dt , is
sometimes called series snubber.
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m
Let us assume that under steady state conditions the load current I L is freewheeling through
co
diode Dm , which has negligible reverse reco`very time. When transistor Q1 is turned on, the
collector current rises and current of diode Dm falls, because Dm will behave as short
s.
circuited. The equivalent circuit during turn on is shown in figure below
bu
la
yl
lls
.a
w
w
w
The turn on di dt is
di Vs
= ...(3)
dt Ls
Equating equations (1) and (3) gives the value of Ls
Vs tr
Ls = ...(4)
IL
During turn off, the capacitor Cs will charge by the load current and the equivalent
circuit is shown in figure. The capacitor voltage will appear across the transistor and the
dv dt is
dv I L
= ...(5)
dt Cs
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Equating equation (2) to equation (5) gives the required value of capacitance,
I Lt f
Cs = ...(6)
Vs
Once the capacitor is charge to Vs , the freewheeling diode will turn on. Due to the
energy stored in Ls , there will be damped resonant circuit as shown in figure . The RLC
circuit is normally made critically damped to avoid oscillations. For unity critical
R C
damping, = 1 , and equation = = yields
0 2 L
Ls
Rs = 2
Cs
The capacitor Cs has to discharge through the transistor and the increase the peak
current rating of the transistor. The discharge through the transistor can be avoided by placing
m
resistor Rs across Cs instead of placing Rs across Ds .
co
The discharge current is shown in figure below. When choosing the value of Rs , the
discharge time, Rs Cs = s should also be considered. A discharge time of one third the
switching period, Ts is usually adequate.
s.
bu
1
3Rs Cs = Ts =
fs
la
1
yl
Rs =
3 f s Cs
l ls
.a
Necessity
w
Driver circuits are operated at very low power levels. Normally the gating circuit are digital in
nature which means the signal levels are 3 to 12 volts. The gate and base drives are connected
w
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C
(a) Circuit arrangement (b) Logic generator
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Vg1,Vg2
VG
0 t
Vg3,Vg4
m
VG
co
0 s.
bu
Gate pulses
la
yl
D ID
lls
G +
.a
+ VDD

w
VGs S
VG
w
RD=RL
w

G
VGS = VG I D RD
There are two ways of floating or isolating control or gate signal with respect to ground.
Pulse transformers
Optocouplers
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Pulse Transformers
Pulse transformers have one primary winding and can have one or more secondary
windings.
Multiple secondary windings allow simultaneous gating signals to series and parallel
connected transistors. The transformer should have a very small leakage inductance and the
rise time of output should be very small.
The transformer would saturate at low switching frequency and output would be distorted.
IC
RB RC
Q1
Logic V1 +
om
drive VCC
circuit 0 
V2
c
s.
bu
Optocouplers
la
Optocouplers combine infrared LED and a silicon photo transistor. The input signal is
yl
applied to ILED and the output is taken from the photo transistor. The rise and fall times of
photo transistor are very small with typical values of turn on time = 2.5 s and turn off of
ls
300ns. This limits the high frequency applications. The photo transistor could be a darlington
l
.a
pair. The phototransistor requires separate power supply and adds to complexity and cost and
weight of driver circuits.
w
w
Optocoupler
+VCC
R
w
+ ID
R2 ID
1 R3
D +
0 1 VDD
Vg1 Q1 
1 M1
RB G
Q3
 R1 S
RG
RD
G
Recommended questions:
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4. Draw the switching model and switching waveforms of a power MOSFET, define the
various switching applications.
5. With a circuit diagram and waveforms of base circuit voltage, base current and collector
current under saturation for a power transistor, show the delay that occurs during the turn
ON and turn OFF.
6. Explain the terms Overdrive factor (ODF) and forced beta for a power transistor for
switching applications?
7. Explain the switching characteristics of BJT.
8. Explain the steady and switching characteristics of MOSFET.
m
co
s.
bu
la
yl
l ls
.a
w
w
w
UNIT3
THYRISTORS
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A thyristor is the most important type of power semiconductor devices. They are
extensively used in power electronic circuits. They are operated as bistable switches from
nonconducting to conducting state.
A thyristor is a four layer, semiconductor of pnpn structure with three pn junctions. It has
three terminals, the anode, cathode and the gate.
The word thyristor is coined from thyratron and transistor. It was invented in the year 1957 at
Bell Labs. The Different types of Thyristors are
Silicon Controlled Rectifier (SCR).
TRIAC
DIAC
Gate Turn Off Thyristor (GTO)
m
3.1 Silicon Controlled Rectifier (SCR)
co
s.
bu
la
yl
lls
.a
The SCR is a four layer three terminal device with junctions J1 , J 2 , J 3 as shown. The
w
construction of SCR shows that the gate terminal is kept nearer the cathode. The approximate
w
thickness of each layer and doping densities are as indicated in the figure. In terms of their
w
lateral dimensions Thyristors are the largest semiconductor devices made. A complete silicon
wafer as large as ten centimeter in diameter may be used to make a single high power
thyristor.
Gate Cathode
n
+ 19
10 cm
3
n
+ 19
10 cm
3
} 10m
}
J3  17 3
p 10 cm 30100m
}
J2
n 10
13
5 x 10
14
cm
3 501000 m
J1
Page 56
p
+
10 cm
17 3
} 3050m
p vtu.allsyllabus.com
10
19
cm
3
Anode
www.allsyllabus.com
Qualitative Analysis
When the anode is made positive with respect the cathode junctions J1 & J 3 are
forward biased and junction J 2 is reverse biased. With anode to cathode voltage VAK being
m
small, only leakage current flows through the device. The SCR is then said to be in the
co
forward blocking state. If VAK is further increased to a large value, the reverse biased junction
J 2 will breakdown due to avalanche effect resulting in a large current through the device.
s.
The voltage at which this phenomenon occurs is called the forward breakdown voltage VBO .
bu
Since the other junctions J1 & J 3 are already forward biased, there will be free movement of
carriers across all three junctions resulting in a large forward anode current. Once the SCR is
la
switched on, the voltage drop across it is very small, typically 1 to 1.5V. The anode current is
yl
Although an SCR can be turned on by increasing the forward voltage beyond VBO , in practice,
the forward voltage is maintained well below VBO and the SCR is turned on by applying a
positive voltage between gate and cathode. With the application of positive gate voltage, the
leakage current through the junction J 2 is increased. This is because the resulting gate
current consists mainly of electron flow from cathode to gate. Since the bottom end layer is
heavily doped as compared to the player, due to the applied voltage, some of these electrons
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reach junction J 2 and add to the minority carrier concentration in the player. This raises the
reverse leakage current and results in breakdown of junction J 2 even though the applied
forward voltage is less than the breakdown voltage VBO . With increase in gate current
breakdown occurs earlier.
VI Characteristics
RL
VAA K
VGG
m
co
Fig.3.3 Circuit
s.
bu
la
yl
lls
.a
w
w
w
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For the forward blocking state the quantity of interest is the forward blocking voltage VBO
which is defined for zero gate current. If a positive gate current is applied to a thyristor then
the transition or break over to the on state will occur at smaller values of anode to cathode
voltage as shown. Although not indicated the gate current does not have to be a dc current but
instead can be a pulse of current having some minimum time duration. This ability to switch
the thyristor by means of a current pulse is the reason for wide spread applications of the
device.
However once the thyristor is in the on state the gate cannot be used to turn the device off.
The only way to turn off the thyristor is for the external circuit to force the current through
the device to be less than the holding current for a minimum specified time period.
m
co
s.
bu
la
yl
ls
Holding Current I H
w
w
After an SCR has been switched to the on state a certain minimum value of anode
current is required to maintain the thyristor in this low impedance state. If the anode current
w
is reduced below the critical holding current value, the thyristor cannot maintain the current
through it and reverts to its off state usually I is associated with turn off the device.
Latching Current I L
After the SCR has switched on, there is a minimum current required to sustain conduction.
This current is called the latching current. I L associated with turn on and is usually greater
than holding current.
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m
co
s.
bu
la
yl
The gate voltage is plotted with respect to gate current in the above characteristics. Ig(max)
.a
is the maximum gate current that can flow through the thyristor without damaging it
w
Similarly Vg(max) is the maximum gate voltage to be applied. Similarly Vg (min) and Ig(min) are
minimum gate voltage and current, below which thyristor will not be turnedon. Hence to
w
turnon the thyristor successfully the gate current and voltage should be
w
The characteristic of Fig. 3.6 also shows the curve for constant gate power (Pg). Thus for
reliable turnon, the (Vg, Ig) point must lie in the shaded area in Fig. 3.6. It turnson thyristor
successfully. Note that any spurious voltage/current spikes at the gate must be less than Vg
(min) and Ig(min) to avoid false triggering of the thyristor. The gate characteristics shown in Fig.
3.6 are for DC values of gate voltage and current.
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pulses is upto l0 kHz. Hence the width of the pulse can be upto 100 micro seconds. The pulsed
gate drive is applied for following reasons (advantages):
i) The thyristor has small turnon time i.e. upto 5 microseconds. Hence a pulse
of gate drive is sufficient to turnon the thyristor.
ii) Once thyristor turnson, there is no need of gate drive. Hence gate drive in
the form of pulses is suitable.
iii) The DC gate voltage and current increases losses in the thyristor. Pulsed gate
drive has reduced losses.
iv) The pulsed gate drive can be easily passed through isolation transformers to isolate
thyristor and trigger circuit.
3.2.2 Requirement of Gate Drive
The gate drive has to satisfy the following requirements:
i) The maximum gate power should not be exceeded by gate drive, otherwise
m
thyristor will be damaged.
co
ii) The gate voltage and current should be within the limits specified by gate
characteristics (Fig. 3.6) for successful turnon.
s.
iii) The gate drive should be preferably pulsed. In case of pulsed drive the following
bu
relation must be satisfied: (Maximum gate power x pulse width) x (Pulse frequency)
Allowable average gate power
la
iv) The width of the pulse should be sufficient to turnon the thyristor successfully.
yl
v) The gate drive should be isolated electrically from the thyristor. This avoids any
damage to the trigger circuit if in case thyristor is damaged.
ls
vi) The gate drive should not exceed permissible negative gate to cathode voltage,
l
.a
vii) The gate drive circuit should not sink current out of the thyristor after turnon.
w
w
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The SCR can be considered to be made up of two transistors as shown in above figure.
Considering PNP transistor of the equivalent circuit,
m
I E 1 = I A , I C = I C1 , = 1 , I CBO = I CBO1 , I B = I B1
co
I B1 = I A (1 1 ) I CBO1 (1)
I C2 = 2 I k + I CBO2
yl
I C2 = 2 ( I A + I G ) + I CBO2 ( 2)
lls
.a
2 I g + ICBO1 + ICBO 2
w
IA =
1 (1 + 2 )
w
Case 1: When I g = 0 ,
I CBO1 + I CBO2
IA =
1 (1 + 2 )
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The gain 1 of transistor T1 varies with its emitter current I E = I A . Similarly varies with
I E = I A + I g = I K . In this case, with I g = 0 , 2 varies only with I A . Initially when the applied
forward voltage is small, (1 + 2 ) < 1 .
If however the reverse leakage current is increased by increasing the applied forward voltage,
the gains of the transistor increase, resulting in (1 + 2 ) 1 .
From the equation, it is seen that when (1 + 2 ) = 1 , the anode current I A tends towards .
This explains the increase in anode current for the break over voltage VB 0 .
When sufficient gate drive is applied, we see that I B2 = I g is established. This in turn results in
a current through transistor T2 , these increases 2 of T2 . But with the existence
m
of I C2 = 2 I 2 = 2 I g , a current through T, is established. Therefore,
co
IC1 = 1 I B1 = 1 2 I B2 = 1 2 I g . This current in turn is connected to the base of T2 . Thus the
base drive of T2 is increased which in turn increases the base drive of T1 , therefore
s.
regenerative feedback or positive feedback is established between the two transistors. This
causes (1 + 2 ) to tend to unity therefore the anode current begins to grow towards a large
bu
value. This regeneration continues even if I g is removed this characteristic of SCR makes it
la
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Once t gd has lapsed, the current starts rising towards the peak value. The period during which
the anode current rises from 10% to 90% of its peak value is called the rise time. It is also
defined as the time for which the anode voltage falls from 90% to 10% of its peak value. The
summation of t gd and tr gives the turn on time ton of the thyristor.
m
Thyristor Turn OFF Characteristics
co
VAK s. tC
bu
tq
la
t
yl
lls
IA
.a
di
Commutation
Anode current dt
w
begins to
w
t1 t2 t3 t4 t5
When an SCR is turned on by the gate signal, the gate loses control over the device and the
device can be brought back to the blocking state only by reducing the forward current to a
level below that of the holding current. In AC circuits, however, the current goes through a
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natural zero value and the device will automatically switch off. But in DC circuits, where no
neutral zero value of current exists, the forward current is reduced by applying a reverse
voltage across anode and cathode and thus forcing the current through the SCR to zero.
As in the case of diodes, the SCR has a reverse recovery time trr which is due to charge
storage in the junctions of the SCR. These excess carriers take some time for recombination
resulting in the gate recovery time or reverse recombination time t gr . Thus, the turnoff time
tq is the sum of the durations for which reverse recovery current flows after the application of
reverse voltage and the time required for the recombination of all excess carriers present. At
the end of the turn off time, a depletion layer develops across J 2 and the junction can now
withstand the forward voltage. The turn off time is dependent on the anode current, the
magnitude of reverse Vg applied ad the magnitude and rate of application of the forward
voltage. The turn off time for converte grade SCRs is 50 to 100sec and that for inverter
m
grade SCRs is 10 to 20sec.
To ensure that SCR has successfully turned off , it is required that the circuit off time tc be
co
greater than SCR turn off time tq .
Thyristor Turn ON
s.
bu
Thermal Turn on: If the temperature of the thyristor is high, there will be an increase
in charge carriers which would increase the leakage current. This would cause an
la
increase in 1 & 2 and the thyristor may turn on. This type of turn on many cause
yl
LASCR: Light activated SCRs are turned on by allowing light to strike the silicon
wafer.
w
High Voltage Triggering: This is triggering without application of gate voltage with
w
only application of a large voltage across the anodecathode such that it is greater than
the forward breakdown voltage VBO . This type of turn on is destructive and should be
avoided.
Gate Triggering: Gate triggering is the method practically employed to turnon the
thyristor. Gate triggering will be discussed in detail later.
dv
Triggering: Under transient conditions, the capacitances of the pn junction will
dt
influence the characteristics of a thyristor. If the thyristor is in the blocking state, a
rapidly rising voltage applied across the device would cause a high current to flow
through the device resulting in turnon. If i j2 is the current throught the junction j2 and
C j2 is the junction capacitance and V j2 is the voltage across j2 , then
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( )
dq2 d C j dVJ 2 dC j2
ij 2 = = C j Vj = 2 + V j2
dt dt 2 2
dt dt
dv
From the above equation, we see that if is large, 1 j2 will be large. A high value of
dt
dv
charging current may damage the thyristor and the device must be protected against high .
dt
dv
The manufacturers specify the allowable .
dt
m
co
s.
bu
la
yl
lls
.a
Thyristor Ratings
w
w
VOLTAGE RATINGS
VDWM : This specifies the peak off state working forward voltage of the device. This specifies
the maximum forward off state voltage which the thyristor can withstand during its working.
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VDRM : This is the peak repetitive off state forward voltage that the thyristor can block
repeatedly in the forward direction (transient).
VDSM : This is the peak off state surge / nonrepetitive forward voltage that will occur across
the thyristor.
VRWM : This the peak reverse working voltage that the thyristor can withstand in the reverse
direction.
VRRM : It is the peak repetitive reverse voltage. It is defined as the maximum permissible
instantaneous value of repetitive applied reverse voltage that the thyristor can block in
m
reverse direction.
co
VRSM : Peak surge reverse voltage. This rating occurs for transient conditions for a specified
time duration.
s.
bu
la
VTM : Peak on state voltage. This is specified for a particular anode current and junction
temperature.
.a
w
dv
w
rating: This is the maximum rate of rise of anode voltage that the SCR has to withstand
dt
w
dv
and which will not trigger the device without gate signal (refer triggering).
dt
Current Rating
ITaverage : This is the on state average current which is specified at a particular temperature.
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Latching current, I L : After the SCR has switched on, there is a minimum current required to
sustain conduction. This current is called the latching current. I L associated with turn on and
is usually greater than holding current
Holding current, I H : After an SCR has been switched to the on state a certain minimum
value of anode current is required to maintain the thyristor in this low impedance state. If the
anode current is reduced below the critical holding current value, the thyristor cannot
maintain the current through it and reverts to its off state usually I is associated with turn off
the device.
di
rating: This is a non repetitive rate of rise of onstate current. This maximum value of rate
dt
om
of rise of current is which the thyristor can withstand without destruction. When thyristor is
switched on, conduction starts at a place near the gate. This small area of conduction spreads
c
di
rapidly and if rate of rise of anode current is large compared to the spreading velocity of
dt s.
carriers, local hotspots will be formed near the gate due to high current density. This causes
bu
the junction temperature to rise above the safe limit and the SCR may be damaged
di
la
Gate Specifications
l
.a
w
I GT : This is the required gate current to trigger the SCR. This is usually specified as a DC
w
value.
w
VGT : This is the specified value of gate voltage to turn on the SCR (dc value).
VGD : This is the value of gate voltage, to switch from off state to on state. A value below this
will keep the SCR in off state.
QRR : Amount of charge carriers which have to be recovered during the turn off process.
Rthjc : Thermal resistance between junction and outer case of the device.
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m
vO
co
a b
LOAD
i
s.R1
bu
R2
la
vS=Vmsint
yl
D VT
lls
R Vg
.a
w
VS VS VS
Vmsint
3 4 3 4 3 4
2 t 2 t 2 t
Vg Vgt Vg Vg Vgp>Vgt
Vgp=Vgt
t 270
0 t t
VT VT VT
3 4
t 2 t t
0 0
90
0 =90 <90
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Also with R2 = 0 , we need to ensure that the voltage drop across resistor R does not exceed
Vgm , the maximum gate voltage
om
Vm R
Vgm
R1 + R
c
Vgm R1 + Vgm R Vm R
Vgm R1 R (Vm Vgm )
s.
bu
Vgm R1
R
la
Vm Vgm
yl
Operation
ls
Vgp , the peak gate voltage is less then Vgt since R2 is very large. Therefore, current I flowing
w
through the gate is very small. SCR will not turn on and therefore the load voltage is zero and
vscr is equal to Vs . This is because we are using only a resistive network. Therefore, output
w
When R2 is set to an optimum value such that Vgp = Vgt , we see that the SCR is triggered at
90 0 (since Vgp reaches its peak at 90 0 only). The waveforms shows that the load voltage is
zero till 90 0 and the voltage across the SCR is the same as input voltage till it is triggered at
90 0 .
Case 3: Vgp > Vgt , R2 small value.
The triggering value Vgt is reached much earlier than 90 0 . Hence the SCR turns on earlier
than VS reaches its peak value. The waveforms as shown with respect to Vs = Vm sin t .
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Vgt
= sin 1
V
Therefore
gp
Vm R
But Vgp =
R1 + R2 + R
Vgt ( R1 + R2 + R )
Therefore = sin 1
Vm R
m
Capacitor C in the circuit is connected to shift the phase of the gate voltage. D1 is used to
prevent negative voltage from reaching the gate cathode of SCR.
co
In the negative half cycle, the capacitor charges to the peak negative voltage of the supply
( Vm ) through the diode s.
D2 . The capacitor maintains this voltage across it, till the supply
bu
voltage crosses zero. As the supply becomes positive, the capacitor charges through resistor
R from initial voltage of Vm , to a positive value.
la
When the capacitor voltage is equal to the gate trigger voltage of the SCR, the SCR is fired
yl
vO
.a
LOAD
+
w
R
D2 VT
w

vS=Vmsint
w
D1
VC C
/2 0 /2 0
0 t 0 t
vc vc
vc vc
a a a a
vo vo
Vm Vm
0
2 3 t t
vT vT
Vm
0 3 t
Vm t 2
Vm
(2+)
(a) (b)
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m
cycle.
co
Design Equation s.
bu
From the circuit VC = Vgt + Vd1 . Considering the source voltage and the gate circuit, we can
write vs = I gt R + VC . SCR fires when vs I gt R + VC that is vS I g R + Vgt + Vd 1 . Therefore
la
vs Vgt Vd 1
R
yl
. The RC time constant for zero output voltage that is maximum firing angle
I gt
lls
T
for power frequencies is empirically gives as RC 1.3 .
.a
2
w
B. RC Full Wave
w
A simple circuit giving full wave output is shown in figure below. In this circuit the
initial voltage from which the capacitor C charges is essentially zero. The capacitor C is
w
reset to this voltage by the clamping action of the thyristor gate. For this reason the charging
time constant RC must be chosen longer than for half wave RC circuit in order to delay the
50T v Vgt
triggering. The RC value is empirically chosen as RC . Also R s .
2 I gt
vO
LOAD
+
+
D1 D3 R
VT
vd 
C
vS=Vmsint
D4 D2
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vs Vmsint vs Vmsint
t t
vd
vd vd
vc vc vgt vc t vgt t
vo vo
t t
vT vT
om
t
(a) (b)
.c
Fig 3.10: RC fullwave trigger circuit Fig: Waveforms for RC fullwave trigger circuit
(a) High value of R s (b) Low value of R
bu
PROBLEM
la
220V, 50Hz supply. The specifications of SCR are Vgt min = 5V , I gt max = 30mA .
lls
.a
vs Vgt VD
R= = 7143.3
w
Ig
w
RC 0.013
w
Therefore
R 7.143k
C 1.8199 F
3.7 UNIJUNCTION TRANSISTOR (UJT)
B2 B2
Etapoint +
B2
RB2
Etapoint
RB2
ptype
E
E A A VBB
E +
RB1
ntype RB1
Ve Ie VBB
 
B1 B1 B1
(a) (b) (c)
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is intrinsic stand off ratio of UJT and ranges between 0.51 and 0.82. Resistor RB 2 is
m
between 5 to 10K.
co
Operation
When voltage VBB is applied between emitter E with base 1 B1 as reference and the emitter
s.
voltage VE is less than (VD + VBE ) the UJT does not conduct. (VD + VBB ) is designated as
bu
VP which is the value of voltage required to turn on the UJT. Once VE is equal to
la
The peak point is the point at which peak current I P flows and the peak voltage VP is across
ls
the UJT. After peak point the current increases but voltage across device drops, this is due to
l
the fact that emitter starts to inject holes into the lower doped nregion. Since pregion is
.a
heavily doped compared to nregion. Also holes have a longer life time, therefore number of
w
carriers in the base region increases rapidly. Thus potential at A falls but current I E
w
The negative resistance region of UJT is between peak point and valley point. After valley
point, the device acts as a normal diode since the base region is saturated and RB1 does not
decrease again.
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Negative Resistance
Region
V
Cutoff e Saturation
region region
VBB
R load line
Vp
Peak Point
Valley Point
Vv
0 Ip Iv Ie
m
Fig.3.12: VI Characteristics of UJT
co
3.8 UJT RELAXATION OSCILLATOR s.
bu
UJT is highly efficient switch. The switching times is in the range of nanoseconds. Since UJT
exhibits negative resistance characteristics it can be used as relaxation oscillator. The circuit
la
diagram is as shown with R1 and R2 being small compared to RB1 and RB 2 of UJT.
yl
lls
Ve Capacitor Capacitor
VBB+V discharging
charging
VBB T2=R1C
.a
Vp
R2
w
R
B2 VP
E Vv
w
T1=RC
VV
w
T t
C B1
Ve R1 v
o Vo
1
t
(a) (b)
Fig.3.13: UJT oscillator (a) Connection diagram and (b) Voltage waveforms
Operation
When VBB is applied, capacitor C begins to charge through resistor R exponentially
towards VBB . During this charging emitter circuit of UJT is an open circuit. The rate of
charging is 1 = RC . When this capacitor voltage which is nothing but emitter voltage VE
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reaches the peak point VP = VBB + VD , the emitter base junction is forward biased and UJT
turns on. Capacitor C rapidly discharges through load resistance R1 with time
constant 2 = R1C ( 2 1 ) . When emitter voltage decreases to valley point Vv , UJT turns off.
Once again the capacitor will charge towards VBB and the cycle continues. The rate of
charging of the capacitor will be determined by the resistor R in the circuit. If R is small the
capacitor charges faster towards VBB and thus reaches VP faster and the SCR is triggered at a
smaller firing angle. If R is large the capacitor takes a longer time to charge towards VP the
firing angle is delayed. The waveform for both cases is as shown below.
(i) Expression for period of oscillationt
The period of oscillation of the UJT can be derived based on the voltage across the capacitor.
Here we assume that the period of charging of the capacitor is lot larger than than the
discharging time.
m
Using initial and final value theorem for voltage across a capacitor, we get
co
VC = V final + (Vinitial V final ) e
t
RC
s.
bu
t = T ,VC = VP ,Vinitial = VV ,V final = VBB
la
V V
.a
T = RC log e BB V
VBB VP
w
If
w
VV < VBB ,
w
VBB
T = RC ln
VBB VP
1
= RC ln
1 VP
VBB
But VP = VBB + VD
If VD VBB VP = VBB
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1
Therefore T = RC ln
1
Design of UJT Oscillator
Resistor R is limited to a value between 3 kilo ohms and 3 mega ohms. The upper limit on
R is set by the requirement that the load line formed by R and VBB intersects the device
characteristics to the right of the peak point but to the left of valley point. If the load line fails
to pass to the right of the peak point the UJT will not turn on, this condition will be satisfied
V VP
if VBB I P R > VP , therefore R < BB .
IP
At the valley point I E = IV and VE = VV , so the condition for the lower limit on R to ensure
VBB VV
turnoff is VBB IV R < VV , therefore R > .
IV
m
The recommended range of supply voltage is from 10 to 35V. the width of the triggering
co
pulse t g = RB1C .
s.
In general RB1 is limited to a value of 100 ohm and RB 2 has a value of 100 ohm or greater
bu
104
and can be approximately determined as RB 2 = .
VBB
la
PROBLEM
yl
1. A UJT is used to trigger the thyristor whose minimum gate triggering voltage is 6.2V,
lls
Solution
1
w
T = RC C ln
1
Here,
1 1
T= = , since f = 2kHz and putting other values,
f 2 103
1 1
= RC 0.04 106 ln = 11.6k
2 103
1 0.66
The peak voltage is given as, Vp = VBB + VD
14 = 0.66VBB + 0.8
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VBB = 20V
0.7 ( RB 2 + RB1 )
R2 =
VBB
0.7 ( 5 103 )
R2 =
0.66 20
R2 = 265
m
20 = 3.2 103 ( R1 + 265 + 5000 )
co
R1 = 985
s.
The value of Rc( max ) is given by equation
bu
VBB V p
la
Rc( max ) =
Ip
yl
20 14
ls
Rc( max ) =
0.5 103
l
.a
VBB Vv
w
Rc( min ) =
Iv
20 1
Rc( min ) =
3 103
Rc( min ) = 6.33k
2. Design the UJT triggering circuit for SCR. Given VBB = 20V , = 0.6 , I p = 10 A ,
Vv = 2V , I v = 10mA . The frequency of oscillation is 100Hz. The triggering pulse
width should be 50 s .
Solution
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1 1
The frequency f = 100Hz, Therefore T = =
f 100
1
From equation T = RcC ln
1
Putting values in above equation,
1 1
= RcC ln
100 1 0.6
Rc C = 0.0109135
m
0.0109135
Rc( min ) =
1106
Vp = VBB + VD
yl
VBB Vv
w
Rc( min ) =
Iv
w
20 2
Rc( min ) = = 1.8k
10 103
Value of R2 can be calculated from
104
R2 =
VBB
104
R2 = = 833.33
0.6 20
Here the pulse width is give, that is 50s.
Hence, value of R1 will be,
Page 79
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2 = R1C
50 106 = R1 1106
R1 = 50
m
zener diode Z functions to clip the rectified voltage to a standard level VZ which remains
co
constant except near Vdc = 0 . This voltage VZ is applied to the charging RC circuit. The
capacitor C charges at a rate determined by the RC time constant. When the capacitor
s.
reaches the peak point VP the UJT starts conducting and capacitor discharges through the
bu
primary of the pulse transformer. As the current through the primary is in the form of a pulse
the secondary windings have pulse voltages at the output. The pulses at the two secondaries
la
feed SCRs in phase. As the zener voltage VZ goes to zero at the end of each half cycle the
yl
synchronization of the trigger circuit with the supply voltage across the SCRs is archived,
small variations in supply voltage and frequency are not going to effect the circuit operation.
lls
In case the resistor R is reduced so that the capacitor voltage reaches UJT threshold voltage
.a
twice in each half cycle there will be two pulses in each half cycle with one pulse becoming
redundant.
w
R1
w
+ +
w
i1 R R2
D1 D3
B2
Pulse Transf
+ E
Vdc Z VZ
B1 G1
C1 To SCR
vc C Gates
G2
D4 D2
C2
  
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fC y(1 or 0)
Sync Carrier
Signal (~6V) Frequency
ZCD Oscillator
C ( 10KHz)
D.C. 5V
supply
m
A A
co
s.
bu
vc,
vdc VZ
la
Vdc
yl
lls
VZ
.a
vc vc vc t
w
Pulse
w
Voltage
w
1 2 1 2 1 2
Fig.3.16: Generation of output pulses for the synchronized UJT trigger circuit
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fc
A I To
G1 Driver
B J Circuit
G1=A.B.fc
A 0.1F
B
H
y
Logic Circuit Modulator
fc
To
A G2 Driver
B K Circuit
G2=A.B.fc
A 0.1F
B
m
y
co
Fig.3.17: Logic circuit, Carrier Modulator
s.
The digital firing scheme is as shown in the above figure. It constitutes a presettable
bu
counter, oscillator, zero crossing detection, flipflop and a logic control unit with NAND and
AND function.
la
Oscillator: The oscillator generates the clock required for the counter. The frequency of the
yl
clock is say f C . In order to cover the entire range of firing angle that is from 00 to 1800, a n
lls
bit counter is required for obtaining 2n rectangular pulses in a half cycle of ac source.
Therefore 4bit counter is used, we obtain sixteen pulses in a half cycle of ac source.
.a
Zero Crossing Detector: The zero crossing detector gives a short pulse whenever the input ac
w
signal goes through zeroes. The ZCD output is used to reset the counter, oscillator and flip
flops for getting correct pulses at zero crossing point in each half cycle, a low voltage
w
Counter: The counter is a presettable nbit counter. It counts at the rate of f C pulses/second.
In order to cover the entire range of firing angle from 0 to 1800 , the nbit counter is required
for obtaining 2n rectangular pulses in a half cycle.
Example: If 4bit counter is used there will be sixteen pulses / half cycle duration. The
counter is used in the down counting mode. As soon as the synchronized signal crosses zero,
the load and enable become high and low respectively and the counter starts counting the
clock pulses in the down mode from the maximum value to the preset value N. N is the
binary equivalent of the control signal. once the counter reaches the preset value N counter
overflow signal goes high. The counter overflow signal is processed to trigger the Thyristors.
Thus by varying the preset input one can control the firing angle of Thyristors. The value of
firing angle ( ) can be calculated from the following equation
2n N N
= 180 = 1 180 ( for n = 4 )
0 0
n
2 16
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Modified RS FlipFlop: The reset input terminal of flipflop is connected to the output of
ZCD and set is connected to output of counter. The pulse goes low at each zero crossing of
the ac signal. A low value of ZCD output resets the Bbar to 1 and B to 0.
A high output of the counter sets Bbar to 0 and B to 1. This state of the flipflop is latched
till the next zero crossing of the synchronized signal. The output terminal B of flipflop is
connected with enable pin of counter. A high at enable EN of counter stops counting till the
next zero crossing.
m
0 0 0 1 Reset
co
1 0 0 1 Last Stage
1 1 1 0
s.
Truth Table of Modified RS FlipFlop
bu
Logic Circuit, Modulation and Driver Stage: The output of the flipflop and pulses A and A
la
bar of ZCD are applied to the logic circuit. The logic variable Y equal to zero or one enables
to select the firing pulse duration from to or
yl
lls
Overall Operation
The input sinusoidal signal is used to derive signals A and Abar with the help of ZCD. The
.a
zero crossing detector along with a low voltage sync signal is used to generate pulses at the
instant the input goes through zeroes. The signal C and Cbar are as shown. The signal C
w
bar is used to reset the fixed frequency oscillator, the flip flop and the nbit counter. The
w
fixed frequency oscillator determines the rate at which the counter must count. The counter is
preset to a value N which is the decimal equivalent of the trigger angle. The counter starts to
w
down count as soon as the Cbar connected to load pin is zero. Once the down count N is
over the counter gives a overflow signal which is processed to be given to the Thyristors.
This overflow signal is given to the Set input S of the modified RS flip flop. If S=1 B goes
high as given by the truth table and B bar has to go low. B has been connected to the Enable
pin of counter. Once B goes low the counter stops counting till the next zero crossing. The
carrier oscillator generates pulses with a frequency of 10kHz for generating trigger pulses for
the Thyristors. Depending upon the values of A, Abar, B, Bbar and Y the logic circuit will
generate triggering pulses for gate1 or gate 2 for Thyristors 1 and 2 respectively.
Page 83
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m
co
s.
bu
la
yl
lls
.a
dv
PROTECTION
3.10 dt
w
dv
w
The across the thyristor is limited by using snubber circuit as shown in figure (a) below.
dt
w
If switch S1 is closed at t = 0 , the rate of rise of voltage across the thyristor is limited by the
capacitor CS . When thyristor T1 is turned on, the discharge current of the capacitor is limited
by the resistor RS as shown in figure (b) below.
Fig.3.18 (a)
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Fig.3.18 (b)
m
co
s.
bu
la
yl
Fig.3.18 (c)
lls
The voltage across the thyristor will rise exponentially as shown by fig (c) above. From fig.
(b) above, circuit we have (for SCR off)
.a
1
VS = i ( t ) RS + i ( t ) dt + Vc ( 0 )[ for t =0] .
C
w
w
w
VS t s
Therefore i (t ) = e , where s = RS CS
RS
Also VT ( t ) = VS i ( t ) RS
VS t s
VT ( t ) = VS e RS
RS
VT ( t ) = VS VS e
t
s t
= VS 1 e s
Therefore
At t = 0, VT ( 0 ) = 0
At t = s , VT ( s ) = 0.632VS
Page 85
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dv VT ( s ) VT ( 0 ) 0.632VS
Therefore = =
dt s RS CS
VS
And RS = .
ITD
dv
It is possible to use more than one resistor for and discharging as shown in the
dt
dv
figure (d) below. The is limited by R1 and CS . R1 + R2 limits the discharging current
dt
VS
such that ITD =
R1 + R2
m
. co
b us
la
yl
lls
.a
w
w
w
Fig.3.18 (d)
The load can form a series circuit with the snubber network as shown in figure (e) below.
The damping ratio of this second order system consisting RLC network is given as,
RS + R CS
= = , where LS stray inductance and L, R is is load inductance
0 2 LS + L
and resistance respectively.
To limit the peak overshoot applied across the thyristor, the damping ratio should be in the
range of 0.5 to 1. If the load inductance is high, RS can be high and CS can be small to retain
the desired value of damping ratio. A high value of RS will reduce discharge current and a
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low value of CS reduces snubber loss. The damping ratio is calculated for a particular circuit
RS and CS can be found.
Fig.3.18 (e)
m
co
di s.
PROTECTION
3.11 dt
bu
la
yl
l ls
.a
w
w
w
di
Practical devices must be protected against high . As an example let us consider the
dt
circuit shown above, under steady state operation Dm conducts when thyristor T1 is off. If T1
di
is fired when Dm is still conducting can be very high and limited only by the stray
dt
di
inductance of the circuit. In practice the is limited by adding a series inductor LS as
dt
di V
shown in the circuit above. Then the forward = S .
dt LS
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Recommended questions:
m
The maximum discharge current from C into the SCR, if and when it is turned ON is to
co
be limited to 100 A. Using an approximate expression, obtain the values of R and C.
8. With the circuit diagram and relevant waveforms, discuss the operation of synchronized
s.
UJT firing circuit for a full wave SCR semi converter.
9. Explain gate to cathode equivalent circuit and draw the gate characteristics. Mark the
bu
operating region.
10. Mention the different turn on methods employed for a SCR
la
11. A SCR is having a dv/dt rating of 200 V/s and a di/dt rating of 100 A/s. This SCR is
yl
used in an inverter circuit operating at 400 VDC and has 1.5 source resistance. Find the
ls
triggering 2) RC triggering.
w
w
w
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UNIT5
5.1 Introduction
In practice it becomes necessary to turn off a conducting thyristor. (Often thyristors
are used as switches to turn on and off power to the load). The process of turning off a
conducting thyristor is called commutation. The principle involved is that either the anode
should be made negative with respect to cathode (voltage commutation) or the anode current
should be reduced below the holding current value (current commutation).
The reverse voltage must be maintained for a time at least equal to the turnoff time of
m
SCR otherwise a reapplication of a positive voltage will cause the thyristor to conduct even
co
without a gate signal. On similar lines the anode current should be held at a value less than
the holding current at least for a time equal to turnoff time otherwise the SCR will start
s.
conducting if the current in the circuit increases beyond the holding current level even
without a gate signal. Commutation circuits have been developed to hasten the turnoff
bu
process of Thyristors. The study of commutation techniques helps in understanding the
transient phenomena under switching conditions.
la
The reverse voltage or the small anode current condition must be maintained for a
yl
time at least equal to the TURN OFF time of SCR; Otherwise the SCR may again start
ls
Forced Commutation.
w
This type of commutation takes place when supply voltage is AC, because a negative
w
voltage will appear across the SCR in the negative half cycle of the supply voltage and the
SCR turns off by itself. Hence no special circuits are required to turn off the SCR. That is the
reason that this type of commutation is called Natural or Line Commutation. Figure 5.1
shows the circuit where natural commutation takes place and figure 1.2 shows the related
waveforms. tc is the time offered by the circuit within which the SCR should turn off
completely. Thus tc should be greater than t q , the turn off time of the SCR. Otherwise, the
SCR will become forward biased before it has turned off completely and will start conducting
even without a gate signal.
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T
+
vs ~ R vo
co
3 t
0 2
.
us
t
b
la
Load voltage vo
yl
Turn off
occurs here
lls
t
.a
w
3 t
w
0 2
w
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Choppers (fixed DC to variable DC), inverters (DC to AC). Forced commutation techniques
are as follows:
Self Commutation
Resonant Pulse Commutation
Complementary Commutation
Impulse Commutation
External Pulse Commutation.
Load Side Commutation.
Line Side Commutation.
m
supply voltage is positive, an oscillating current tends to flow and when the current through
the SCR reaches zero, the device turns off. This is done by including an inductance and a
co
capacitor in series with the load and keeping the circuit underdamped. Figure 5.3 shows the
circuit.
s.
This type of commutation is used in Series Inverter Circuit.
bu
T L Vc(0)
i R
la
+ 
yl
Load C
lls
.a
V
w
w
w
At t = 0 , when the SCR turns ON on the application of gate pulse assume the current
in the circuit is zero and the capacitor voltage is VC ( 0 ) .
Writing the Laplace Transformation circuit of figure 5.3 the following circuit is
obtained when the SCR is conducting.
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1 VC(0)
sL CS S
T R I(S) +  + 
C
V
S
Fig.: 5.4.
V VC ( 0 )
I (S ) = S
m
1
R + sL +
co
CS
s.CS V VC ( 0 )
bu
= S
RCs + s 2 LC + 1
la
C V VC ( 0 )
=
yl
R 1
LC s 2 + s +
L LC
lls
.a
V VC ( 0 )
w
= L
R 1
s +s +
2
w
L LC
w
(V V ( 0 ) )
C
= L
2 2
R 1 R R
s +s +
2
+
L LC 2 L 2 L
(V V ( 0 ) )
C
= L
2
R 1 R
2 2
s+ +
2 L LC 2 L
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A
= ,
(s + ) +2
2
Where
A=
(V V ( 0 ) ) ,
C
=
R
, =
1 R
2
L 2L LC 2 L
A
I (S ) =
( s + )2 + 2
m
A
i (t ) = e t sin t
co
Therefore expression for current
V VC ( 0 )
s. R
bu
t
i (t ) = e 2 L sin t
L
la
L
lls
(ii) Expression for voltage across capacitor at the time of turn off
.a
vc = V vR VL
w
w
di
vc = V iR L
dt
Substituting for i,
A d A t
vc = V R e t sin t L e sin t
dt
A A
vc = V R
e t sin t L
(e t
cos t e t sin t )
A
vc = V e t [ R sin t + L cos t L sin t ]
Page 93
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A R
vc = V e t R sin t + L cos t L sin t
2L
A R
vc = V e t sin t + L cos t
2
Substituting for A,
vc ( t ) = V
(V V ( 0 ) ) e
t R
2 sin t + L cos t
C
vc ( t ) = V
(V V ( 0 ) ) e
t R
2 L sin t + cos t
C
m
Therefore at turn off
co
(V V ( 0 ) )
vc =V
C
e ( 0 + cos )
s.
bu
vc = V + V VC ( 0 ) e
la
yl
R
Therefore vc = V + V VC ( 0 ) e 2 L
lls
2
R 1
That is <
w
2L LC
w
V t
i= sin
L LC
1
But =
LC
V t C t
Therefore i= LC sin =V sin
L LC L LC
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Figure 5.5 shows the waveforms for the above conditions. Once the SCR turns off
voltage across it is negative voltage.
Conduction time of SCR = .
C
V
L Current i
t
0 /2
2V
Capacitor voltage
V
m
t
co
Gate pulse
s. t
bu
la
t
yl
V
lls
Fig. 5.5: Self Commutation Wave forms of Current and Capacitors Voltage
w
Problem 5.1 : Calculate the conduction time of SCR and the peak SCR current that flows in
the circuit employing series resonant commutation (self commutation or class A
w
T RL L C
+
100 5 mH 1 F
V
=300V
Fig. 5.6
Solution:
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2
1 RL
=
LC 2 L
2
1 100
= 3 6
3
5 10 1 10 2 5 10
Since the circuit is initially relaxed, initial voltage across capacitor is zero as also the
initial current through L and the expression for current i is
V t R
m
i= e sin t , where = ,
L 2L
co
Therefore peak value of i=
V
L
s.
bu
300
i= = 6A
la
10000 5 10 3
yl
Conducting time of SCR = = = 0.314msec
lls
10000
.a
Problem 1.2: Figure 1.7 shows a self commutating circuit. The inductance carries an initial
w
current of 200 A and the initial voltage across the capacitor is V, the supply voltage.
w
Determine the conduction time of the SCR and the capacitor voltage at turn off.
w
L T i(t)
IO
10 H
C +
V 50 F VC(0)=V
=100V
Fig. 5.7
Solution:
Page 96
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sL IOL
+
I(S) +
VC(0)
=V
+ S
V
S 1
CS
V V ( 0) 1
m
= I ( S ) sL I O L + C + I (S )
s s Cs
co
V VC ( 0 )
+ IO L s.
Therefore I (S ) = s s
bu
1
sL +
Cs
la
V VC ( 0 )
yl
Cs
s s I LCs
I (S ) =
lls
+ 2O
s LC + 1
2
s LC + 1
.a
V VC ( 0 ) C
I (S ) =
I O LCs
w
+
1 2 1
LC s 2 + s + LC
w
LC
LC
w
V VC ( 0 ) sI O
I (S ) = +
L s +
2 2
s +2
2
V VC ( 0 )
I (S ) =
sI O 1
+ Where =
L s 2 + 2 s + 2
2
LC
Taking inverse LT
C
i ( t ) = V VC ( 0 ) sin t + I O cos t
L
Page 97
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t
1
vc ( t ) = i ( t ) dt + VC ( 0 )
C0
1
t
C
vc ( t ) = V VC ( 0 ) sin t + I O cos t dt + VC ( 0 )
C 0 L
1 (V VC ( 0 ) ) C t I t
vc ( t ) = ( cos t ) + O ( sin t ) + VC ( 0 )
C L o o
1 (V VC ( 0 ) ) C I
vc ( t ) = (1 cos t ) + O ( sin t ) + VC ( 0 )
C L
m
co
IO 1 C
vc ( t ) = LC sin t + (V VC ( 0 ) ) LC (1 cos t ) + VC ( 0 )
C C L
s.
bu
L
vc ( t ) = I O sin t + V V cos t VC ( 0 ) + VC ( 0 ) cos t + VC ( 0 )
C
la
yl
L
vc ( t ) = I O sin t (V VC ( 0 ) ) cos t + V
C
lls
.a
In this problem VC ( 0 ) = V
w
i ( t ) = I O cos t and
w
Therefore we get,
w
L
vc ( t ) = I O
sin t + V
C
he waveforms are as shown in figure 1.9
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I0
i(t)
t
/2
vc(t)
m
t
/2
co
Fig.: 1.9
.
us
Turn off occurs at a time to so that tO =
b
2
la
0.5
Therefore tO = = 0.5 LC
yl
lls
tO = 0.5 10 106 50 10 6
.a
L
vc ( tO ) = I O sin tO + V
C
10 106
vc ( tO ) = 200 6
sin 900 + 100
50 10
35.12
vc ( tO ) = 200 0.447 sin + 100
22.36
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Problem 5.3: In the circuit shown in figure 1.10. V = 600 volts, initial capacitor voltage is
zero, L = 20 H, C = 50F and the current through the inductance at the time of SCR
triggering is Io = 350 A. Determine (a) the peak values of capacitor voltage and current (b)
the conduction time of T1.
L T1
I0
i(t)
V C
Fig. 5.10
Solution:
(Refer to problem 5.2).
m
co
The expression for i ( t ) is given by
i ( t ) = V VC ( 0 )
C
sin t + I O cos t
.
us
L
b
C
yl
i ( t ) can be written as
.a
w
C
i ( t ) = I O2 + V 2 sin ( t + )
L
w
w
L
IO
where = tan 1 C
V
1
and =
LC
C
I O2 + V 2
L
Page 100
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50 106
= 3502 + 600 2 = 1011.19 A
20 10 6
L
vc ( t ) = I O sin t (V VC ( 0 ) ) cos t + V
C
L
with VC ( 0 ) = 0, vc ( t ) = I O sin t V cos t + V
C
m
This can be rewritten as
co
L
vc ( t ) = V 2 + I O2 sin ( t ) + Vs.
C
bu
C
la
V
Where = tan 1 L
yl
IO
lls
L
= V 2 + I O2 +V
C
w
w
20 10 6
= 600 2 + 3502 + 600
50 106
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Capacitor
current
t
0
Fig. 5.11
Therefore conduction time of SCR =
L
IO
tan 1 C
V
m
=
co
1
LC
s.
bu
Substituting the values
L
IO
la
= tan 1 C
V
yl
lls
.a
350 20 10 6
= tan 1
600 50 106
w
w
1 1
= = = 31622.8 rad/sec
LC 20 10 6 50 106
0.3534
= = 88.17 sec
31622.8
Page 102
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L
T
i
a
b C
IL
V
Load
FWD
m
This is a type of commutation in which a LC series circuit is connected across the
co
SCR. Since the commutation circuit has negligible resistance it is always underdamped i.e.,
the current in LC circuit tends to oscillate whenever the SCR is on.
s.
Initially the SCR is off and the capacitor is charged to V volts with plate a being
bu
positive. Referring to figure 5.13 at t = t1 the SCR is turned ON by giving a gate pulse. A
current I L flows through the load and this is assumed to be constant. At the same time SCR
la
short circuits the LC combination which starts oscillating. A current i starts flowing in the
yl
direction shown in figure. As i reaches its maximum value, the capacitor voltage reduces to
lls
zero and then the polarity of the capacitor voltage reverses b becomes positive). When i
falls to zero this reverse voltage becomes maximum, and then direction of i reverses i.e.,
.a
through SCR the load current I L and i flow in opposite direction. When the instantaneous
w
value of i becomes equal to I L , the SCR current becomes zero and the SCR turns off. Now
w
the capacitor starts charging and its voltage reaches the supply voltage with plate a being
positive. The related waveforms are shown in figure 5.13.
w
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Gate pulse
of SCR
t
t1
V
Capacitor voltage
vab
t
tC
Ip i
t
IL
m
t
co
ISCR
s.
bu
t
la
Voltage across
yl
SCR
lls
t
.a
w
Assume that at the time of turn off of the SCR the capacitor voltage vab V and
load current I L is constant. tc is the time taken for the capacitor voltage to reach 0 volts from
V volts and is derived as follows.
t
1 c
V = I L dt
C0
I L tc
V=
C
VC
tc = seconds
IL
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For proper commutation tc should be greater than t q , the turn off time of T. Also, the
magnitude of I p , the peak value of i should be greater than the load current I L and the
expression for i is derived as follows
T i
+
C VC(0)
=V
m
co
Fig. 5.14
sL
yl
lls
T 1
Cs
.a
+
V
w
s
w
Fig. 5.15
w
V
I (S ) = s
1
sL +
Cs
V
Cs
I ( S ) = 2
s
s LC + 1
VC
I (S ) =
1
LC s 2 +
LC
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V 1
I (S ) =
L s2 + 1
LC
1
V LC 1
I (S ) =
L s2 + 1 1
LC LC
1
C LC
I (S ) = V
L s2 + 1
LC
Taking inverse LT
m
co
C
i (t ) = V sin t
L
s.
bu
1
Where =
LC
la
V
i (t ) =
yl
Or sin t = I p sin t
L
lls
.a
C
Therefore Ip =V amps .
L
w
w
= + t
I
sin 1 L
I
= + p
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current ic ( t ) , flows in the direction shown, i.e., in a direction opposite to that of load
current I L .
C
ic ( t ) = I p sin t (refer to the previous circuit description). Where I p = VC ( 0 ) &
L
and the capacitor voltage is given by
1
vc ( t ) = iC ( t ).dt
C
1 C
vc ( t ) = VC ( 0 ) sin t.dt .
C L
vc ( t ) = VC ( 0 ) cos t
m
T1 iC(t) IL
co
C L iC(t) T2
s.
ab
bu
+
VC(0) L
O
la
V T3
A
D
yl
FWD
lls
.a
w
When ic ( t ) becomes equal to I L (the load current), the current through T1 becomes
zero and T1 turns off. This happens at time t1 such that
t1
I L = I p sin
LC
C
I p = VC ( 0 )
L
I L
t1 = LC sin 1 L
VC ( 0 ) C
Page 107
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vc ( t1 ) = V1 = VC ( 0 ) cos t1
Once the thyristor T1 turns off, the capacitor starts charging towards the supply
voltage through T2 and load. As the capacitor charges through the load capacitor current is
same as load current I L , which is constant. When the capacitor voltage reaches V, the supply
voltage, the FWD starts conducting and the energy stored in L charges C to a still higher
voltage. The triggering of T3 reverses the polarity of the capacitor voltage and the circuit is
ready for another triggering of T1 . The waveforms are shown in figure 5.17.
Expression For tc
Assuming a constant load current I L which charges the capacitor
m
CV1
tc = seconds
co
IL
Normally V1 VC ( 0 ) s.
bu
For reliable commutation tc should be greater than t q , the turn off time of SCR T1 . It is
la
to be noted that tc depends upon I L and becomes smaller for higher values of load current.
Current iC(t)
yl
lls
.a
t
w
w
w
V
Capacitor
voltage vab
t
t1
V1
tC
VC(0)
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D2
iC(t)
T1 IL
C L iC(t) T2
 +
VC(0)
L
T3 O
V A
FWD D
m
. co
us
Fig. 5.17(a)
iC
b
la
IL
yl
0
lls
t
VC
.a
w
w
0 t
t1 t2
w
V1
VC(O) tC
Fig. 5.17(b)
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level I L at time t 2 . Thus the presence of D2 has accelerated the discharge of capacitor C.
Now the capacitor gets charged through the load and the charging current is constant. Once
capacitor is fully charged T2 turns off by itself. But once current of thyristor T1 reduces to
zero the reverse voltage appearing across T1 is the forward voltage drop of D2 which is very
small. This makes the thyristor recovery process very slow and it becomes necessary to
provide longer reverse bias time.
From figure 5.17(b)
t2 = LC t1
VC ( t2 ) = VC ( O ) cos t2
m
Problem 5.4: The circuit in figure 5.18 shows a resonant pulse commutation circuit. The
initial capacitor voltage VC ( O ) = 200V , C = 30F and L = 3H. Determine the circuit turn off
co
time tc , if the load current I L is (a) 200 A and (b) 50 A.
.
us
T1 IL
b
C L iC(t) T2
la
+
yl
VC(0)
L
lls
T3 O
V A
FWD D
.a
w
w
w
Fig. 5.18
Solution
(a) When I L = 200 A
Let T2 be triggered at t = 0 .
The capacitor current ic ( t ) reaches a value I L at t = t1 , when T1 turns off
I L
t1 = LC sin 1 L
VC ( 0 ) C
200 3 106
t1 = 3 10 6 30 106 sin 1
200 30 106
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t1 = 3.05 sec .
1 1
= =
LC 3 10 6 30 106
m
V1 = 200 0.9487
co
V1 = 189.75 Volts
s.
bu
CV1
and tc =
IL
la
30 106 189.75
yl
tc = = 28.46 sec .
200
l ls
When I L = 50 A
.a
(b)
50 3 106
w
t1 = 3 10 6 30 106 sin 1
200 30 106
w
t1 = 0.749 sec .
w
CV1
tc =
IL
30 106 200
tc = = 120 sec .
50
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Problem 5.4a: Repeat the above problem for I L = 200 A , if an antiparallel diode D2 is
connected across thyristor T1 as shown in figure 5.18a.
D2
iC(t)
T1 IL
C L iC(t) T2
 +
VC(0)
L
T3 O
m
V A
D
co
FWD
s.
bu
la
Fig. 5.18(a)
yl
Solution
lls
I L = 200 A
.a
Let T2 be triggered at t = 0 .
w
I L
Therefore t1 = LC sin 1 L
VC ( O ) C
200 3 106
t1 = 3 10 6 30 106 sin 1
200 30 106
` t1 = 3.05 sec .
1 1
= =
LC 3 10 6 30 106
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At t = t1
VC ( t1 ) = V1 = VC ( O ) cos t1
VC ( t1 ) = 189.75V
m
t2 = LC t1
co
t2 = 3 106 30 10 6 3.05 106
s.
bu
t2 = 26.75 sec .
la
1 1
= =
yl
LC 3 10 6 30 106
lls
At t = t2
VC ( t2 ) = V2 = 200 cos 0.105 10+6 26.75 106
w
w
VC ( t2 ) = V2 = 189.02 V
tC = 23.7 secs
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Problem 5.5: For the circuit shown in figure 5.19. Calculate the value of L for proper
commutation of SCR. Also find the conduction time of SCR.
4 F
V
=30V L
RL i
30 IL
Fig. 5.19
Solution:
V 30
The load current I L = = = 1 Amp
m
RL 30
For proper SCR commutation I p , the peak value of resonant current i, should be
co
greater than I L ,
Let I p = 2I L , s.
Therefore I p = 2 Amps .
bu
V V C
Also Ip = = =V
L 1
L L
la
LC
yl
4 106
Therefore 2 = 30
lls
L
.a
Therefore L = 0.9mH .
w
1 1
= = = 16666 rad/sec
LC 0.9 103 4 106
w
w
I
sin 1 L
I
Conduction time of SCR = + p
1
sin 1
2
= +
16666 16666
+ 0.523
= radians
16666
= 0.00022 seconds
= 0.22 msec
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Problem 5.6: For the circuit shown in figure 5.20 given that the load current to be
commutated is 10 A, turn off time required is 40sec and the supply voltage is 100 V. Obtain
the proper values of commutating elements.
C
V
=100V L i IL
IL
Fig. 5.20
Solution
C
I p Peak value of i = V and this should be greater than I L . Let I p = 1.5 I L .
m
L
co
C
Therefore 1.5 10 = 100 ... ( a )
L s.
bu
Also, assuming that at the time of turn off the capacitor voltage is approximately
equal to V (and referring to waveform of capacitor voltage in figure 5.13) and the load
la
CV
tc = seconds
IL
.a
w
100
w
Therefore 40 10 6 = C
10
Therefore C = 4 F
4 106
1.5 10 = 100
L
10 4 4 10 6
1.52 102 =
L
Therefore L = 1.777 10 4 H
L = 0.177mH .
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Problem 5.7: In a resonant commutation circuit supply voltage is 200 V. Load current is 10
A and the device turn off time is 20s. The ratio of peak resonant current to load current is
1.5. Determine the value of L and C of the commutation circuit.
Solution
Ip
Given = 1.5
IL
C
That is Ip =V = 15 A ... ( a )
L
m
It is given that the device turn off time is 20 sec. Therefore tc , the circuit turn off
co
time should be greater than this,
Let tc = 30 sec .
s.
bu
CV
And tc =
la
IL
yl
200 C
Therefore 30 106 =
10
l ls
.a
Therefore C = 1.5 F .
w
w
Substituting in (a)
w
1.5 10 6
15 = 200
L
1.5 106
152 = 2002
L
Therefore L = 0.2666 mH
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IL
R1 R2
ab iC
V
C
T1 T2
c om
s.
Fig. 5.21: Complementary Commutation
bu
The working of the circuit can be explained as follows.
Initially both T1 and T2 are off; now, T1 is fired. Load current I L flows through R1 . At
la
the same time, the capacitor C gets charged to V volts through R2 and T1 (b becomes
yl
positive with respect to a). When the capacitor gets fully charged, the capacitor current
ls
ic becomes zero.
l
To turn off T1 , T2 is fired; the voltage across C comes across T1 and reverse biases it,
.a
hence T1 turns off. At the same time, the load current flows through R2 and T2 . The capacitor
w
C charges towards V through R1 and T2 and is finally charged to V volts with a plate
w
positive. When the capacitor is fully charged, the capacitor current becomes zero. To turn
w
off T2 , T1 is triggered, the capacitor voltage (with a positive) comes across T2 and T2 turns
off. The related waveforms are shown in figure 5.22.
vc ( t ) = V f + (Vi V f ) e t
Where V f is the final voltage, Vi is the initial voltage and is the time constant.
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At t = tc , vc ( t ) = 0 ,
= R1C , V f = V , Vi = V ,
tc
Therefore 0 = V + ( V V ) e R1C
tc
0 = V 2Ve R1C
tc
m
tc
0.5 = e R1C
co
Taking natural logarithms on both sides
t
ln 0.5 = c
s.
bu
R1C
la
tc = 0.693R1C
yl
tc = 0.693R2C
w
w
Usually R1 = R2 = R
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Current through T 1 2V
R2
V
R1
t
2V Current through T2
R1
V
m
R2
t
co
V
Voltage across
capacitor vab s.
bu
t
la
V
yl
tC tC
lls
Voltage across T1
.a
t
w
w
tC
w
Fig. 5.22
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Problem 5.8: In the circuit shown in figure 1.23 the load resistances R1 = R2 = R = 5 and
the capacitance C = 7.5 F, V = 100 volts. Determine the circuits turn off time tc .
R1 R2
V
C
T1 T2
Fig. 5.23
Solution
m
The circuit turnoff time tc = 0.693 RC seconds
co
tc = 0.693 5 7.5 10 6
s.
tc = 26 sec .
bu
Problem 5.9: Calculate the values of RL and C to be used for commutating the main SCR in
la
the circuit shown in figure 1.24. When it is conducting a full load current of 25 A flows. The
yl
minimum time for which the SCR has to be reverse biased for proper commutation is 40sec.
ls
Also find R1 , given that the auxiliary SCR will undergo natural commutation when its forward
current falls below the holding current value of 2 mA.
l
.a
w
i1 IL
w
R1 RL
w
iC
V
=100V C
Auxiliary Main
SCR SCR
Fig. 5.24
Solution
In this circuit only the main SCR carries the load and the auxiliary SCR is used to turn
off the main SCR. Once the main SCR turns off the current through the auxiliary SCR is the
sum of the capacitor charging current ic and the current i1 through R1 , ic reduces to zero after
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a time tc and hence the auxiliary SCR turns off automatically after a time tc , i1 should be less
than the holding current.
Given I L = 25 A
V 100
That is 25 A = =
RL RL
Therefore RL = 4
tc = 40 sec = 0.693RL C
40 106
Therefore C=
m
4 0.693
co
C = 14.43 F
V
i1 =
s.
should be less than the holding current of auxiliary SCR.
bu
R1
100
Therefore should be < 2mA.
la
R1
yl
100
Therefore R1 >
lls
2 10 3
.a
That is R1 > 50 K
w
w
T1 IL
T3 VC(O) C
+
L
L T2 O
V A
FWD D
The working of the circuit can be explained as follows. It is assumed that initially the
capacitor C is charged to a voltage VC ( O ) with polarity as shown. Let the thyristor T1 be
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conducting and carry a load current I L . If the thyristor T1 is to be turned off, T2 is fired. The
capacitor voltage comes across T1 , T1 is reverse biased and it turns off. Now the capacitor
starts charging through T2 and the load. The capacitor voltage reaches V with top plate being
positive. By this time the capacitor charging current (current through T2 ) would have reduced
to zero and T2 automatically turns off. Now T1 and T2 are both off. Before firing T1 again,
the capacitor voltage should be reversed. This is done by turning on T3 , C discharges through
T3 and L and the capacitor voltage reverses. The waveforms are shown in figure 5.26.
VS
m
Capacitor
voltage
co
t
VC
tC s.
bu
Voltage across T1
t
la
yl
VC
l ls
(i) Expression for Circuit Turn Off Time (Available Turn Off Time) tc
w
t
1 c
VC = I L dt
C0
I L tc
VC =
C
VC C
tc = seconds
IL
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Note:
T1 is turned off by applying a negative voltage across its terminals. Hence this is
voltage commutation.
tc depends on load current. For higher load currents tc is small. This is a disadvantage
of this circuit.
When T2 is fired, voltage across the load is V + VC ; hence the current through load
shoots up and then decays as the capacitor starts charging.
m
i
co
T1 +
IT1 VC(O) C
s. _
bu
T2
D
la
V
L
yl
lls
IL
.a
RL
w
w
w
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VC
Capacitor
voltage
t
V
tC
This is due to i
IT 1
IL
Current through SCR V
RL
t
m
2V
RL
co
IL
Load current
. t
us
V Voltage across T1
b
t
la
yl
tC
lls
Problem 5.10: An impulse commutated thyristor circuit is shown in figure 5.29. Determine
the available turn off time of the circuit if V = 100 V, R = 10 and C = 10 F. Voltage
w
+
T1

C VC(0)
V +
T2 R

Fig. 5.29
Solution
When T2 is triggered the circuit is as shown in figure 5.30.
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VC(O)
 + i(t)
+
C
T2
V R

Fig. 5.30
1 VC(0)
Cs s
m
+ I(s)
co
+
V
s
s. R
bu
la
Fig. 5.31
yl
lls
1
(V + VC ( 0 ) )
w
I (S ) = s
1
R+
w
Cs
w
C (V + VC ( 0 ) )
I (S ) =
1 + RCs
I (S ) =
(V + V ( 0 ) )
C
1
Rs +
RC
1 VC ( 0 )
Voltage across capacitor VC ( s ) = I ( s )
Cs s
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1 V + VC ( 0 ) VC ( 0 )
VC ( s ) =
RCs 1 s
s+
RC
V + VC ( 0 ) V + VC ( 0 ) VC ( 0 )
VC ( s ) =
s 1 s
s+
RC
V V V ( 0)
VC ( s ) = C
s s+ 1 s+
1
RC RC
(
vc ( t ) = V 1 e
t
RC
) V ( 0) e
C
t
RC
m
co
In the given problem VC ( 0 ) = V
Therefore (
vc ( t ) = V 1 2e
t
RC
)
s.
bu
la
V
.a
w
vC(t)
w
t
w
VC(0)
tC
Fig. 5.32
At t = tc , vc ( t ) = 0
tc
Therefore 0 = V 1 2e RC
tc
1 = 2e RC
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1 tc
= e RC
2
tc = RC ln ( 2 )
tc = 10 10 106 ln ( 2 )
tc = 69.3 sec .
m
Problem 5.11: In the commutation circuit shown in figure 5.33. C = 20 F, the input voltage
co
V varies between 180 and 220 V and the load current varies between 50 and 200 A.
Determine the minimum and maximum values of available turn off time tc .
.
us
T1 I0
b
la
C VC(0)=V
+
yl
V
lls
T2
I0
.a
Fig. 5.33
w
Solution
It is given that V varies between 180 and 220 V and I O varies between 50 and 200 A.
w
CV
tc =
IO
CVmax
Therefore tc max =
I O min
220
tc max = 20 10 6 = 88 sec
50
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CVmin
and tc min =
I O max
180
tc min = 20 106 = 18 sec
200
m
source and VAUX is the auxiliary supply. Assume thyristor T1 is conducting and load RL is
connected across supply VS . When thyristor T3 is turned ON at t = 0 , VAUX , T3 , L and C from
co
an oscillatory circuit. Assuming capacitor is initially uncharged, capacitor C is now charged
s.
to a voltage 2VAUX with upper plate positive at t = LC . When current through T3 falls to
bu
zero, T3 gets commutated. To turnoff the main thyristor T1 , thyristor T2 is turned ON. Then
T1 is subjected to a reverse voltage equal to VS 2VAUX . This results in thyristor T1 being
la
through the load. Hence to test the commutation circuit the load has to be connected.
Examples of load side commutation are Resonant Pulse Commutation and Impulse
w
Commutation.
w
w
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L T1
+ IL
T3 +
_C L
FWD O
VS A
Lr D
T2
m
Fig.: 5.35 Line Side Commutation Circuit
co
Figure 5.35 shows line side commutation circuit. Thyristor T2 is fired to charge the
s.
capacitor C. When C charges to a voltage of 2V, T2 is self commutated. To reverse the
bu
voltage of capacitor to 2V, thyristor T3 is fired and T3 commutates by itself. Assuming that
T1 is conducting and carries a load current I L thyristor T2 is fired to turn off T1 . The turning
la
ON of T2 will result in forward biasing the diode (FWD) and applying a reverse voltage of
yl
2V across T1 . This turns off T1 , thus the discharging and recharging of capacitor is done
lls
through the supply and the commutation circuit can be tested without load.
.a
w
Recommended questions:
w
w
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What is the purpose of connecting an antiparallel diode across the main thyristor with or
UNIT4
Controlled Rectifiers
m
Type of commutation: Natural / AC line commutation
co
4.1.1Different types of Line Commutated Converters
s.
AC to DC Converters (Phase controlled rectifiers)
AC to AC converters (AC voltage controllers)
bu
AC to AC converters (Cyclo converters) at low output frequency
la
yl
We cannot control the dc output voltage or the average dc load current in a diode
w
rectifier circuit
w
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m
Full wave controlled rectifiers.
co
Semi converter (half controlled bridge converter).
Full converter (fully controlled bridge converter).
s.
bu
4.4 Principle of Phase Controlled Rectifier Operation
la
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Equations:
m
R
V
co
Where I m = m = max. value of load current
R
s.
bu
4.4.1 To Derive an Expression for the Average (DC) Output Voltage across the Load
la
2
1
VO( dc ) = Vdc = v .d ( t );
yl
2
O
0
lls
vO = Vm sin t for t = to
.a
1
Vm sin t.d ( t )
2
VO( dc ) = Vdc =
w
1
w
Vm sin t.d ( t )
2
VO( dc ) =
w
V
VO( dc ) = m sin t.d ( t )
2
V
VO( dc ) = m cos t
2
Vm
VO( dc ) = [ cos + cos ] ; cos = 1
2
V
VO( dc ) = m [1 + cos ] ; Vm = 2VS
2
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m
We can plot the control characteristic
co
(V (
O dc ) )
vs by using the equation for VO( dc )
s.
bu
4.5 Control Characteristic of Single Phase Half Wave Phase Controlled Rectifier with
Resistive Load
la
yl
expression
Vm
[1 + cos ]
l
VO( dc ) =
.a
2
We can obtain the control characteristic by
w
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VO(dc)
Vdm
0.6Vdm
0.2 Vdm
0 60 120 180
Trigger angle in degrees
m
Normalized output voltage
co
Vm
Vdc 2 (
1 + cos )
Vn = =
Vdm Vm s.
bu
Vdc 1
Vn = = (1 + cos ) = Vdcn
Vdm 2
la
yl
4.5.2 To Derive an Expression for the RMS Value of Output Voltage of a Single Phase
lls
VO( RMS ) = vO .d ( t )
2 0
w
1
1 2 2 2
VO( RMS ) = Vm sin t.d ( t )
2
1 cos 2 t
By substituting sin 2 t = , we get
2
1
1 2 (1 cos 2 t ) 2
VO ( RMS ) = Vm .d ( t )
2 2
1
V 2 2
VO ( RMS ) = m
4
(1 cos 2 t ) .d ( t )
1
V 2
2
VO ( RMS ) = m d ( t ) cos 2 t.d ( t )
4
1
V 1
sin 2 t 2
VO( RMS ) = m ( t )
2 2 Page 134
1
om
power delivered to the load)
PO( dc ) = VO( dc ) I O ( dc ) ; i.e., Pdc = Vdc I dc
c
Where s.
VO( dc ) = Vdc = avg./ dc value of o/p voltage.
bu
I O ( dc ) = I dc = avg./dc value of o/p current
la
yl
Output ac power
PO( ac ) = VO( RMS ) I O( RMS )
l ls
PO( dc ) PO( dc )
Efficiency = ; % Efficiency = 100
w
PO( ac ) PO( ac )
w
Output ac power
PO( ac ) = VO( RMS ) I O( RMS )
Efficiency of Rectification (Rectification Ratio)
PO( dc ) PO( dc )
Efficiency = ; % Efficiency = 100
PO( ac ) PO( ac )
The o/p voltage consists of two components
The dc component VO( dc )
The ac /ripple component Vac = Vr ( rms )
4.5.4 The Ripple Factor (RF) w.r.t output voltage waveform
Page 135
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I r ( rms ) I ac
Current Ripple Factor ri = =
I O( dc ) I dc
om
Vr ( pp ) = peak to peak ac ripple output voltage
Vr ( pp ) = VO( max ) VO( min )
c
I r ( pp ) = peak to peak ac ripple load current
s.
I r ( pp ) = I O( max ) I O( min )
bu
la
PO( dc )
TUF =
VS I S
l ls
Where
.a
Where
vS = Supply voltage at the transformer secondary side
Page 136
iS = i/p supply current
vtu.allsyllabus.com
(transformer secondary winding current)
iS 1 = Fundamental component of the i/p supply current
www.allsyllabus.com
om
L
= tan 1 for an RL load
R
Displacement Factor (DF) or
c
Fundamental Power Factor
DF = Cos
s.
bu
la
1 1
I I 2 I 2 2
2
l
2
HF = = 1
.a
S S1
S
2
I S1 I S 1
w
Where
w
Page 137
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m
co
s.
bu
la
yl
lls
.a
w
w
4.5.6 To derive an expression for the output (Load) current, during t = to when
Page 138
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thyristor T1 conducts
Assuming T1 is triggered t = ,
we can write the equation,
di
L O + RiO = Vm sin t ; t
dt
General expression for the output current,
t
Vm
iO = sin ( t ) + A1e
Z
Z = R 2 + ( L ) =Load impedance.
2
m
= tan 1 = Load impedance angle.
R
co
L
= = Load circuit time constant.
R
.
us
general expression for the output load current
R
Vm t
sin ( t ) + A1e L
b
iO =
Z
la
yl
initial condition iO = 0 at t = ; t=
.a
R
V t
iO = 0 = m sin ( ) + A1e L
w
Z
w
R
t Vm
A1e L = sin ( )
w
Z
We get the value of constant A1 as
R ( )
Vm
A1 = e Z sin ( )
L
Page 139
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om
Vm R
( t )
iO = sin ( t ) sin ( ) e L
=0
Z
.c
R
( )
sin ( ) = e L
sin ( )
s
bu
can be calculated by solving the above eqn.
la
4.5.7 To Derive an Expression for Average (DC) Load Voltage of a Single Half
yl
2
1
VO( dc ) = VL = v .d (t )
.a
2
O
0
1
2
w
VO( dc ) = VL = vO .d ( t ) + vO .d ( t ) + vO .d ( t )
2 0
w
vO = 0 for t = 0 to & for t = to 2
w
1
VO ( dc ) = VL = vO .d ( t ) ;
2
vO = Vm sin t for t = to
1
VO( dc ) = VL = Vm sin t.d ( t )
2
Vm
VO( dc ) = VL = cos t
2
Vm
VO( dc ) = VL = ( cos cos )
2
V
VO ( dc ) = VL = m ( cos cos )
2
Page 140
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During the period t = to the instantaneous output voltage is negative and this reduces
the average or the dc output voltage when compared to a purely resistive load.
VO (dc ) Vm
I O ( d c ) = I L ( A vg ) = = ( co s co s )
RL 2 R L
4.5.9 Single Phase Half Wave Controlled Rectifier with RL Load & Free Wheeling
Diode
T
i0
+
m
V0
R
co
+
Vs
~ FWD
s.
L
bu
la
vS
Supply voltage
yl
lls
0 2 3 t
.a
w
iG
Gate pulses
w
0 t
w
iO Load current
t=
0 t
2+
vO
Load voltage
0 2 3 t
Page 141
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om
of the FWD.
c
s.
For Large Load Inductance the load current does not reach zero, & we obtain
bu
continuous load current.
la
yl
i0
ls
t1 t2 t3 t4
l
.a
0
t
2 2+ 3
w
w
Page 142
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4.6 Single Phase Full Wave Controlled Rectifier Using A Center Tapped Transformer
T1
A
+
vO
AC R L
O
Supply
T2
m
4.6.1 Discontinuous Load Current Operation without FWD for << (+)
co
vO Vm
s.
bu
t
la
0
yl
lls
iO
.a
t
w
0
2 3
w
(+) (+)
(i) To derive an expression for the output (load) current, during t = to when
thyristor
T1 conducts
Assuming T1 is triggered t = ,
we can write the equation,
di
L O + RiO = Vm sin t ; t
dt
General expression for the output current,
t
Vm
iO = sin ( t ) + A1e
Z
Page 143
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m
Z = R2 + ( L ) =Load impedance.
2
co
L
= tan 1 = Load impedance angle.
L
R s.
bu
= = Load circuit time constant.
R
general expression for the output load current
la
R
Vm
yl
t
iO = sin (t ) + Ae
1
L
Z
lls
R
Vm ( t ) Vm
iO = sin ( t ) + e L sin ( )
w
Z Z
we obtain the final expression for the
w
Page 144
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(ii) To Derive an Expression for the DC Output Voltage of A Single Phase Full Wave
Controlled Rectifier with RL Load (Without FWD)
vO Vm
t
0
iO
t
m
0
2 3
co
(+) (+)
1
s.
VO( dc ) = Vdc = v .d ( t )
bu
t=
O
la
1
VO( dc ) = Vdc = Vm sin t.d ( t )
yl
lls
Vm
VO( dc ) = Vdc = cos t
.a
V
= Vdc = m ( cos cos )
w
VO( dc )
w
w
Page 145
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vO Vm
t Thyristor T1 is triggered at t = ;
m
0
T1 conducts from t = to
co
Thyristor T2 is triggered at t = ( + ) ;
iO s. T2 conducts from t = ( + ) to 2
FWD conducts from t = to &
bu
vO 0 during discontinuous load current.
t
la
0
2 3
yl
(+) (+)
lls
.a
w
(v) To Derive an Expression for the DC Output Voltage for a Single Phase Full
w
1
vO .d (t )
t=0
VO( dc) = Vdc =
1
Vm sin t.d (t )
VO( dc) = Vdc =
Vm
VO( dc) = Vdc = cos t
V
VO( dc) = Vdc = m [ cos + cos ] ; cos = 1
Vm
VO( dc) = Vdc = (1+ cos )
Page 146
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The load current is discontinuous for low values of load inductance and for large
values of trigger angles.
For large values of load inductance the load current flows continuously without
falling to zero.
Generally the load current is continuous for large load inductance and for low
trigger angles.
vO Vm
t
0
m
co
iO
s.
bu
t
la
0
2 3
yl
(+) (2+)
lls
.a
(i) To Derive an Expression for Average / DC Output Voltage of Single Phase Full
Wave Controlled Rectifier for Continuous Current Operation without FWD
w
w
vO Vm
w
t
0
iO
t
0
2 3
(+) (2+)
Page 147
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( + )
1
VO ( dc ) = Vdc = vO .d ( t )
t =
( + )
1
VO ( dc ) = Vdc = Vm sin t.d ( t )
( + )
V
VO ( dc ) = Vdc = m cos t
VO( dc ) = Vdc
Vm
= cos cos ( + ) ;
cos ( + ) = cos
m
Vm
VO( dc ) = Vdc = [cos + cos ]
co
2Vm
VO( dc ) = Vdc = cos
s.
bu
By plotting VO(dc) versus , we obtain the control characteristic of a single phase
full wave controlled rectifier with RL load for continuous load current operation
without FWD
la
yl
lls
.a
w
w
V d c = V d m co s
w
Page 148
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VO(dc)
Vdm
0.6Vdm
0.2 Vdm
0
30 60 90 120 150 180
0.2Vdm
0.6 Vdm
Vdm
Trigger angle in degrees
m
co
By varying the trigger angle we can vary the
output dc voltage across the load. Hence we can
s.
control the dc output power flow to the load.
bu
For trigger angle , 0 to 900 ( i.e., 0 900 ) ;
cos is positive and hence Vdc is positive
la
0
w
Page 149
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The bridge full wave controlled rectifier does not require a centre tapped transformer
4.7.1 Single Phase Full Wave Half Controlled Bridge Converter (Single Phase Semi
Converter)
m
co
s.
bu
la
yl
lls
Thyristor T1 is triggered at
t = , at t = ( 2 + ) ,...
w
w
Thyristor T2 is triggered at
t = ( + ) , at t = ( 3 + ) ,...
w
Page 150
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Waveforms of single phase semiconverter with general load & FWD for > 900
m
co
s.
bu
la
yl
lls
.a
w
w
w
Page 151
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Load Voltage & Load Current Waveform of Single Phase Semi Converter for < 900
& Continuous load current operation
vO Vm
t
0
iO
co
t
s.
0
2 3
bu
(+) (2+)
la
yl
(i) To Derive an Expression for The DC Output Voltage of A Single Phase Semi
lls
Converter with R, L, & E Load & FWD For Continuous, Ripple Free Load Current
Operation
.a
1
vO .d (t )
w
t=0
VO( dc) = Vdc =
w
1
Vm sin t.d (t )
w
VO( dc) = Vdc =
Vm
VO( dc) = Vdc = cos t
V
VO( dc) = Vdc = m [ cos + cos ] ; cos = 1
Vm
VO( dc) = Vdc = (1 + cos )
Page 152
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m
1
2 2
VO( RMS ) = Vm2 sin 2 t.d ( t )
co
2
V 2
s.
1
2
VO( RMS ) = m
(1 cos 2t ) .d (t )
bu
2
1
la
Vm 1 sin 2 2
VO( RMS ) = + 2
yl
2
lls
4.7.2 Single Phase Full Wave Full Converter (Fully Controlled Bridge Converter) With
.a
R, L, & E Load
w
w
w
Page 153
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m
co
s.
bu
la
yl
lls
.a
w
w
w
Page 154
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(i) To Derive An Expression For The Average DC Output Voltage of a Single Phase Full
m
Converter assuming Continuous & Constant Load Current
co
The average dc output voltage
can be determined by using the expression
1
2
s.
VO( dc ) = Vdc = vO .d ( t ) ;
bu
2 0
The o/p voltage waveform consists of two o/p
la
+
2
VO( dc) = Vdc = Vm sin t.d (t )
w
2
w
2V +
VO( dc) = Vdc = m [ cos t ]
2
w
2V
VO( dc) = Vdc = m cos
Maximum average dc output voltage is
calculated for a trigger angle = 00
and is obtained as
2Vm 2Vm
Vdc( max ) = Vdm = cos ( 0 ) =
2Vm
Vdc( max ) = Vdm =
Page 155
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m
Single Phase Full Converter for constant
co
& continuous load current operation.
We use the equation for the average/ dc s.
output voltage
bu
2Vm
VO( dc ) = Vdc = cos
la
yl
lls
.a
w
w
w
Page 156
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VO(dc)
Vdm
0.6Vdm
0.2 Vdm
0
30 60 90 120 150 180
0.2Vdm
0.6 Vdm
Vdm
Trigger angle in degrees
m
During the period from t = to the input voltage vS and the input current iS are
co
both positive and the power flows from the supply to the load.
The converter is said to be operated in the rectification mode Controlled Rectifier
Operation for 0 < < 900
s.
bu
During the period from t = to (+), the input voltage vS is negative and the
input current iS is positive and the output power becomes negative and there will be
la
Page 157
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(ii) To Derive an Expression for the RMS Value of the Output Voltage
m
+
2
VO( RMS ) = vO .d ( t )
2
co
2
s.
The single phase full converter gives two
bu
output voltage pulses during the input supply
time period and hence the single phase full
la
+
2
= vO .d ( t )
2
VO( RMS )
2
.a
w
w
w
Page 158
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m
co
+ +
Vm2 sin 2 t
VO( RMS ) = ( t )
2 2
Vm2
s.
sin 2 ( + ) sin 2
bu
VO( RMS ) = ( + )
2 2
la
2 2
lls
sin ( 2 + 2 ) = sin 2
.a
VO( RMS ) = ( )
2 2
w
Vm2 Vm2 Vm
w
VO( RMS ) = ( )
0 = =
2 2 2
V
VO ( RMS ) = m = VS
2
Hence the rms output voltage is same as the
rms input supply voltage
Page 159
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m
+ 2+ 3+
co
s.
The rms thyristor current can be
bu
calculated as
I O( RMS )
IT ( RMS ) =
la
2
yl
calculated as
I O( dc )
.a
IT ( Avg ) =
2
w
w
w
Page 160
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m
co
s.
bu
la
yl
lls
.a
w
w
w
Page 161
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m
co
s.
bu
la
yl
l ls
.a
w
w
2V
Vdc1 = m cos 1
The average dc output voltage of converter 2 is
2V
Vdc 2 = m cos 2
In the dual converter operation one
converter is operated as a controlled rectifier
with < 900 & the second converter is
operated as a line commutated inverter
in the inversion mode with > 900
Vdc1 = Vdc 2
Page 162
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m
vO2 = Instantaneous o/p voltage of converter 2.
co
The circulating current ir can be determined by integrating the instantaneous voltage
difference (which is the voltage drop across the circulating current reactor Lr),
starting from t = (2  1).
s.
bu
As the two average output voltages during the interval t = (+1) to (2  1) are
equal and opposite their contribution to the instantaneous circulating current ir is zero.
la
t
yl
1
ir = vr .d ( t ) ; vr = ( vO1 vO 2 )
Lr ( 2 1 )
lls
vr = ( vO1 + vO 2 )
w
t
w
1
ir = ( vO1 + vO 2 ) .d ( t ) ;
Lr ( 2 1 )
w
Vm t t
ir = sin t.d ( t ) sin t.d ( t )
Lr ( 2 1 ) ( 2 1 )
2Vm
ir = ( cos t cos 1 )
Lr
The instantaneous value of the circulating current
depends on the delay angle.
where
Vm
I p = I L( max) = ,
RL
&
4Vm
ir( max) = = max. circulating current
Lr
m
NonCirculating Current Mode of Operation
In this mode only one converter is operated at a time.
co
When converter 1 is ON, 0 < 1 < 900
Vdc is positive and Idc is positive. s.
When converter 2 is ON, 0 < 2 < 900
bu
Vdc is negative and Idc is negative.
la
In this mode, both the converters are switched ON and operated at the same time.
The trigger angles 1 and 2 are adjusted such that (1 + 2) = 1800 ; 2 = (1800 
lls
1).
.a
When 900 <1 <1800, converter 1 operates as an Inverter and converter 2 operated as
w
Page 164
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m
Advantages of Circulating Current Mode of Operation
co
The circulating current maintains continuous conduction of both the converters over
the complete control range, independent of the load.
s.
One converter always operates as a rectifier and the other converter operates as an
inverter, the power flow in either direction at any time is possible.
bu
As both the converters are in continuous conduction we obtain faster dynamic
response. i.e., the time response for changing from one quadrant operation to another
la
is faster.
yl
lls
When the load current falls to zero, there will be a circulating current flowing
w
The converter thyristors should be rated to carry a peak current much greater than the
w
Recommended questions:
Page 165
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5. With a neat circuit diagram and waveforms, explain the working of 1phase FCB for
R and RLloads.
6. Determine the performance factors for 1phase FCB circuit.
7. What is dual converter? Explain the working principle of 1phase dual converter.
What are the modes of operation of dual converters? Explain briefly.
8. With a neat circuit diagram and waveforms explain the working of 3 phase HHCB
using SCRs. Obtain the expressions for Vdc and Idc.
9. With a neat circuit diagram and waveforms, explain the working of 3phase HWR
using SCRs. Obtain the expressions for Vdc and Idc.
10. With a neat circuit diagram and waveforms, explain the working of 3 phase FCB
using SCRs. Obtain the expressions for Vdc and Idc.
11. Draw the circuit diagram of 3 phase dual converter. Explain its working?
12. List the applications of converters. Explain the effect of battery in the RLE load in
converters.
13. A single phase half wave converter is operated from a 120V, 60 Hz supply. If the
m
load resistive load is R=10 and the delay angle is =/3, determine a) the efficiency
co
b) the form factor c) the transformer utilization factor and d) the peak inverse voltage
(PIV) of thyristor T1
s.
14. A single phase half wave converter is operated from a 120 V, 60 Hz supply and the
bu
load resistive load is R=10. If the average output voltage is 25% of the maximum
possible average output voltage, calculate a) the delay angel b) the rms and average
la
output current c) the average and ram thyristor current and d) the input power factor.
15. A single half wave converter is operated from a 120 V, 60Hz supply and freewheeling
yl
diodes is connected across the load. The load consists of seriesconnected resistance
lls
R=10, L=mH, and battery voltage E=20V. a) Express the instantaneous output
voltage in a Fourier series, and b) determine the rms value of the lowest order output
.a
harmonic current.
w
16. A single phase semiconverter is operated from 120V, 60 Hz supply. The load current
with an average value of Ia is continuous with negligible ripple content. The turns
w
ratio of the transformer is unity. If the delay angle is A= /3, calculate a) the
w
harmonic factor of input current b) the displacement factor and c) the input power
factor.
17. A single phase semi converter is operated from 120V, 60Hz supply. The load consists
of series connected resistance R=10, L=5mH and battery voltage E=20V. a)
Express the instantaneous output voltage in a Fourier series, b) Determine the rms
value of the lowest order output harmonic current.
18. The three phase half wave converter is operated from a three phase Y connected
220V, 60Hz supply and freewheeling diodes is connected across the load. The load
consists of series connected resistance R=10, L=5mH and battery voltage E=120V.
a) Express the instantaneous output voltage in a Fourier series and b) Determine the
rms value of the lowest order output harmonic current.
Page 166
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13. without a series inductor? What is the ratio of peak resonant to load current for resonant
pulse commutation that would minimize the commutation losses?
14. Why does the commutation capacitor in a resonant pulse commutation get over
charged?
15. How is the voltage of the commutation capacitor reversed in a commutation circuit?
16. What is the type of a capacitor used in high frequency switching circuits?
m
co
s.
bu
la
yl
lls
.a
w
w
w
Page 167
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UNIT6
DC Choppers
7.1 Introduction
Chopper is a static device.
A variable dc voltage is obtained from a constant dc voltage source.
Also known as dctodc converter.
Widely used for motor control.
Also used in regenerative braking.
Thyristor converter offers greater efficiency, faster response, lower maintenance,
om
smaller size and smooth control.
c
Choppers are of Two Types
Stepdown choppers.
s.
bu
Stepup choppers.
In step down chopper output voltage is less than input voltage.
la
Chopper
l
.a
i0
w
+
w
w
V R V0
Page 168
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v0
V
Vdc
t
tON tOFF
i0
V/R
Idc
t
T
m
T = tON + tOFF = Period of switching or chopping period.
co
1
f = = Freq. of chopper switching or chopping freq.
T
tON + tOFF
t
yl
Vdc = V ON = V .d
T
lls
t
but ON = d = duty cycle
.a
t
Average Output Current
w
Vdc
I dc =
w
R
w
V t V
I dc = ON = d
R T R
RMS value of output voltage
tON
1
VO = v dt
2
o
T 0
V2 t
VO = tON = ON .V
T T
VO = d .V
Page 169
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Output power PO = VO I O
VO
But IO =
R
Output power
VO2
PO =
R
dV 2
PO =
R
m
The output voltage can be varied by
co
varying the duty cycle.
s.
bu
Methods of Control
The output dc voltage can be varied by the following methods.
la
lls
V0
w
tON tOFF
w
t
T
V0
t
tON tOFF
vtu.allsyllabus.com
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v0
V
tON tOFF
t
T
v0
tON tOFF
t
T
m
Chopper
i0
+
co
R
V FWD
s. L
V0
bu
E
la
yl
For a continuous current operation, load current varies between two limits Imax
w
and Imin
When current becomes equal to Imax the chopper is turnedoff and it is turnedon
when current reduces to Imin.
Page 171
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v0
Output
voltage
V
tON tOFF
t
T
i0 Output
Imax current
Continuous
Imin current
t
i0 Output
current
Discontinuous
current
t
m
co
Expressions for Load Current Io for Continuous Current Operation When Chopper
is ON (0 T Ton)
s. i0
bu
+
R
la
V0
yl
V L
lls
E
.a

w
diO
V = iO R + L +E
w
dt
w
V E I
IO ( S ) = + min
R R
LS S + S +
L L
Page 172
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i0
m
co
R
s.
bu
L
la
E
yl
lls
diO
0 = RiO + L +E
dt
w
E
0 = RI O ( S ) + L SI O ( S ) iO ( 0 ) +
w
S
Redefining time origin we have at t = 0,
initial current iO ( 0 ) = I max
I max E
IO ( S ) =
S+
R R
LS S +
L L
Taking Inverse Laplace Transform
R
t E t
R
iO ( t ) = I max e L
1 e L
R
Page 173
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R
At t = tON = dT , iO ( t ) = I max
m
V E
dRT
dRT
co
I max = 1 e L
+ I
min e L
R
From equation s.
R
t E t
R
bu
iO ( t ) = I max e L
1 e L
R
t = tOFF = T tON , iO ( t ) = I min
la
At
t = tOFF = (1 d ) T
yl
lls
(1 d ) RT ( 1 d ) RT
E
.a
I min = I max e L
1 e L
R
w
V E
dRT
dRT
I max = 1 e
L
+ I min e
L
w
R
we get,
dRT
V 1 e L E
I max =
R
RT R
1 e L
iO = I min +
( I ) .t
for 0 t tON ( dT )
m
dT
I I
co
iO = I min + max min t
dT
0
dT 0
yl
( I max I min ) t
2
1
dT
I O( RMS ) = 0 I min + dT dt
lls
dT
dT 2
1
I O( RMS ) =
dT 0 I min + dT t + dT
dt
w
1
2 ( I max I min ) 2
2
w
Page 175
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Where
I S = Average source current
I S = dI dc
V
Ri =
dI dc
m
L
C O VO
V
co
A
D
Chopper
s.
bu
Stepup chopper is used to obtain a load voltage higher than the input voltage V.
la
The values of L and C are chosen depending upon the requirement of output
yl
The inductor current I rises and the inductor stores energy during the ON time of
.a
The current tends to decrease resulting in reversing the polarity of induced EMF
w
in L.
Therefore voltage across load is given by
dI
VO = V + L i.e., VO > V
dt
A large capacitor C connected across the load, will provide a continuous output
voltage .
Diode D prevents any current flow from capacitor to the source.
Step up choppers are used for regenerative braking of dc motors.
Page 176
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m
When Chopper is OFF
(energy is supplied by inductor to load)
co
Voltage across L = VO V
Energy supplied by inductor L = (VO V ) ItOFF s.
where tOFF = OFF period of Chopper.
bu
Neglecting losses, energy stored in inductor
la
V [tON + tOFF ]
VO =
.a
tOFF
w
T
VO = V
T tON
w
Where
w
T = tON + tOFF
1
VO = V
t
1 ON
T
1
VO = V
1 d
t
Where d = ON = duty cyle
T
Page 177
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Performance Parameters
The thyristor requires a certain minimum time to turn ON and turn OFF.
Duty cycle d can be varied only between a min. & max. value, limiting the min. and
max. value of the output voltage.
Ripple in the load current depends inversely on the chopping frequency, f.
To reduce the load ripple current, frequency should be as high as possible.
Problem
1. A Chopper circuit is operating on TRC at a frequency of 2 kHz on a 460 V supply. If
the load voltage is 350 volts, calculate the conduction period of the thyristor in each
cycle.
Solution:
m
V = 460 V, Vdc = 350 V, f = 2 kHz
1
co
Chopping period T=
f
T=
1
2 10 3
s.
= 0.5 m sec
bu
t
Output voltage Vdc = ON V
T
la
tON =
V
lls
0.5 10 3 350
tON =
.a
460
tON = 0.38 msec
w
w
Problem
2. Input to the step up chopper is 200 V. The output required is 600 V. If the conducting
w
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Chopping frequency
1
f =
T
1
f = = 3.33KHz
300 10 6
Pulse width is halved
200 106
tON = = 100 s
2
Frequency is constant
f = 3.33KHz
1
T = = 300 s
om
f
T
Output voltage = V
c
T tON
300 106
= 200
s. = 300 Volts
6
( 300 100)10
bu
la
yl
Problem
ls
3. A dc chopper has a resistive load of 20 and input voltage VS = 220V. When chopper
l
.a
is ON, its voltage drop is 1.5 volts and chopping frequency is 10 kHz. If the duty cycle is
80%, determine the average output voltage and the chopper on time.
w
w
Solution:
w
Page 179
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Chopper ON time,
tON = dT
tON = 0.80 0.1 103
tON = 0.08 103 = 80 secs
Problem
m
4. In a dc chopper, the average load current is 30 Amps, chopping frequency is 250 Hz,
co
supply voltage is 110 volts. Calculate the ON and OFF periods of the chopper if the load
resistance is 2 ohms.
Solution:
s.
bu
I dc = 30 Amps, f = 250 Hz , V = 110 V , R = 2
1 1
Chopping period, T = = = 4 10 3 = 4 msecs
la
f 250
yl
Vdc
I dc = & Vdc = dV
lls
R
dV
I dc =
.a
R
I R 30 2
w
d = dc = = 0.545
V 110
w
w
Chopper ON period,
tON = dT = 0.545 4 103 = 2.18 msecs
Chopper OFF period,
tOFF = T tON
tOFF = 4 103 2.18 103
tOFF = 1.82 103 = 1.82 msec
Problem
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V R v0
Solution:
m
Average output voltage
co
Vdc = d (V Vch )
Vdc = 0.60 [ 200 2] = 118.8 Volts s.
RMS value of output voltage
bu
VO = d (V Vch )
la
V V
Ri = =
I S I dc
.a
Vdc 118.8
I dc = = = 11.88 Amps
w
R 10
w
V V 200
Ri = = = = 16.83
w
I S I dc 11.88
Output power is
(V Vch )
dT dT 2
1 v02 1
PO =
T
0
R
dt =
T
0
R
dt
d (V Vch )
2
PO =
R
0.6 [ 200 2]
2
PO = = 2352.24 watts
10
Input power,
dT
1
Pi =
T Vi dt
0
O
1
dT
V (V Vch )
PO =
T
0
R
dt
Page 181
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1. Class A Chopper
i0 v0
+
Chopper
m
L
O v0 V
V A
co
FWD D
s. i0
bu
When chopper is ON, supply voltage V is connected across the load.
la
When chopper is OFF, vO = 0 and the load current continues to flow in the same
yl
The average values of output voltage and current are always positive.
Class A Chopper is a first quadrant chopper .
.a
Class A Chopper is a stepdown chopper in which power always flows form source to
load.
w
The output current equations obtained in step down chopper with RL load can be
w
t
i0
Output current
CH ON
t
v0 FWD Conducts
Output voltage
t
tON
T
Page 182
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2. Class B Chopper
D
i0 v0
+
R
V L v0
Chopper
E i0
m
is returned to the supply.
co
Average output voltage is positive.
Average output current is negative.
s.
Therefore Class B Chopper operates in second quadrant.
In this chopper, power flows from load to source.
bu
Class B Chopper is used for regenerative braking of dc motor.
Class B Chopper is a stepup chopper.
la
yl
ig
Thyristor
lls
gate pulse
.a
t
i0 tOFF tON
w
w
T
t
w
Output current
Imax
Imin
D
conducts Chopper
conducts
v0 Output voltage
Page 183
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m
At t = tOFF i( O ) ( t ) = I max
co
V E R
tOFF
R
tOFF
I max = 1 e +
min
L
I e L
R s.
During the interval chopper is ON voltage
bu
equation is given by
LdiO
la
0= + RiO + E
dt
yl
R
t E t
R
iO ( t ) = I max e 1 e L 0 < t < tON
w
L
R
w
At t = tON iO ( t ) = I min
w
R
tON E tON
R
I min = I max e L
1 e L
R
Page 184
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3. Class C Chopper
CH1 D1
i0 v0
+
V R
CH2 D2 L v0
Chopper
i0
E
om
When CH1 is ON, the load current is positive.
The output voltage is equal to V & the load receives power from the source.
c
When CH1 is turned OFF, energy stored in inductance L forces current to flow
s.
through the diode D2 and the output voltage is zero.
bu
Current continues to flow in positive direction.
When CH2 is triggered, the voltage E forces current to flow in opposite direction
la
On turning OFF CH2 , the energy stored in the inductance drives current through
ls
source.
w
Choppers CH1 & CH2 should not be turned ON simultaneously as it would result in
w
Page 185
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ig1
Gate pulse
of CH1
t
ig2 Gate pulse
of CH2
t
i0
Output current
t
m
t
co
4. Class D Chopper
s.
bu
la
v0
yl
CH1 D2
lls
R i0 L E
.a
V
v0 i0
w
+
w
D1 CH2
w
Page 186
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ig1
Gate pulse
of CH1
t
ig2 Gate pulse
of CH2
t
i0
Output current
t
CH1,CH2 D1,D2 Conducting
ON
v0 Output voltage
V
Average v0
t
ig1
Gate pulse
m
of CH1
co
t
ig2 Gate pulse
of CH2
s. t
bu
i0
Output current
la
CH1
CH2
yl
t
D1, D2
lls
v0 Output voltage
V
.a
t
w
Average v0
w
w
5. Class E Chopper
CH1 D1 CH3 D3
i0 R L E
V
+
v0
CH2 D2 CH4 D4
Page 187
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v0
CH2  D4 Conducts CH1  CH4 ON
D1  D4 Conducts CH4  D2 Conducts
i0
m
When CH1 and CH4 are triggered, output current iO flows in positive direction
co
through CH1 and CH4, and with output voltage vO = V.
This gives the first quadrant operation.
s.
When both CH1 and CH4 are OFF, the energy stored in the inductor L drives iO
through D2 and D3 in the same direction, but output voltage vO = V.
bu
Therefore the chopper operates in the fourth quadrant.
When CH2 and CH3 are triggered, the load current iO flows in opposite direction &
la
Since both iO and vO are negative, the chopper operates in third quadrant.
lls
When both CH2 and CH3 are OFF, the load current iO continues to flow in the same
direction D1 and D4 and the output voltage vO = V.
.a
The source inductance should be as small as possible to limit the transient voltage.
w
Also source inductance may cause commutation problem for the chopper.
Usually an input filter is used to overcome the problem of source inductance.
The load ripple current is inversely proportional to load inductance and chopping
frequency.
Peak load current depends on load inductance.
To limit the load ripple current, a smoothing inductor is connected in series with the
load.
7. 5 Impulse Commutated Chopper
Impulse commutated choppers are widely used in high power circuits where load
fluctuation is not large.
This chopper is also known as
Parallel capacitor turnoff chopper
Voltage commutated chopper
Page 188
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Classical chopper.
LS T1 iT1
+ a + IL +
b _C T2
iC FWD
L
O
VS A vO
D
L D1
_ _
To start the circuit, capacitor C is initially charged with polarity (with plate a
positive) by triggering the thyristor T2.
Capacitor C gets charged through VS, C, T2 and load.
m
As the charging current decays to zero thyristor T2 will be turnedoff.
co
With capacitor charged with plate a positive the circuit is ready for operation.
Assume that the load current remains constant during the commutation process.
s.
For convenience the chopper operation is divided into five modes.
bu
Mode1
Mode2
la
Mode3
Mode4
yl
Mode5
lls
Mode1 Operation
.a
LS T1
w
w
+ + IL
w
VC _C iC
L
VS O
A
D
L D1
_
Thyristor T1 is fired at t = 0.
The supply voltage comes across the load.
Load current IL flows through T1 and load.
At the same time capacitor discharges through T1, D1, L1, & C and the capacitor
reverses its voltage.
This reverse voltage on capacitor is held constant by diode D1.
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Mode2 Operation
IL
+ LS _ IL
VC C L
+ O
m
VS T2
A
D
co
_ s.
bu
VC C
tC =
w
IL
W here I L is load current.
t C depends on load current, it m ust be designed
for the w orst case condition w hich occur at the
m axim um value of load current and m ini m um
value of capacitor voltage.
The total time required for the capacitor to discharge and recharge is called the
commutation time and it is given by
At the end of Mode2 capacitor has recharged to VS and the freewheeling diode starts
conducting.
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Mode3 Operation
IL
+ LS + IL
VS _C T2 L
VS O
A
FWD D
_
m
naturally turns off.
co
The instantaneous capacitor voltage is
LS
s.
VC ( t ) = VS + I L sin S t
bu
C
Where
la
1
S =
yl
LS C
lls
Mode4 Operation
.a
LS
w
w
+ IL
w
+
VC _C L
D1 O
VS
A
L D
_ FWD
Capacitor has been overcharged i.e. its voltage is above supply voltage.
Capacitor starts discharging in reverse direction.
Hence capacitor current becomes negative.
The capacitor discharges through LS, VS, FWD, D1 and L.
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When this current reduces to zero D1 will stop conducting and the capacitor voltage
will be same as the supply voltage.
Mode5 Operation
IL
L
FWD O
A
D
m
Both thyristors are off and the load current flows through the FWD.
This mode will end once thyristor T1 is fired.
co
ic s.
Capacitor Current
IL
bu
0 t
Ip
la
iT1
yl
Ip
IL Current through T 1
lls
t
0
.a
w
v T1
w
Vc Voltage across T1
w
t
0
vo
V s+V c
Vs Output Voltage
t
vc
Vc
t
Capacitor Voltage
V c
tc
td
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Disadvantages
A starting circuit is required and the starting circuit should be such that it triggers
thyristor T2 first.
Load voltage jumps to almost twice the supply voltage when the commutation is
initiated.
The discharging and charging time of commutation capacitor are dependent on the
load current and this limits high frequency operation, especially at low load current.
Chopper cannot be tested without connecting load.
Thyristor T1 has to carry load current as well as resonant current resulting in increasing its
peak current rating.
Recommended questions:
m
1. Explain the principle of operation of a chopper. Briefly explain timeratio control and
co
PWM as applied to chopper
2. Explain the working of step down shopper. Determine its performance factors, VA, Vo
rms, efficiency and Ri the effective input resistane s.
3. Explain the working of step done chopper for RLE load. Obtain the expressions for
bu
minimum load current I1max load current I2, peak peak load ripple current di avg value
of load current Ia, the rms load current Io and Ri.
la
4. Give the classification of stem down converters. Explain with the help of circuit diagram
yl
5. The step down chopper has a resistive load of R=10ohm and the input voltage is
Vs=220V. When the converter switch remain ON its voltage drop is Vch=2V and the
.a
chopping frequency is 1 KHz. If the duty cycle is 50% determine a) the avg output
voltage VA, b) the rms output voltage Vo c) the converter efficiency d) the effective input
w
UNIT7
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INVERTERS
The converters which converts the power into ac power popularly known as the inverters,.
The application areas for the inverters include the uninterrupted power supply (UPS), the ac
motor speed controllers, etc.
m
The inverters can be classified based on a number of factors like, the nature of output
waveform (sine, square, quasi square, PWM etc), the power devices being used (thyristor
co
transistor, MOSFETs IGBTs), the configuration being used, (series. parallel, half bridge, Full
bridge), the type of commutation circuit that is being employed and Voltage source and
current source inverters. s.
bu
The thyristorised inverters use SCRs as power switches. Because the input source of power is
pure de in nature, forced commutation circuit is an essential part of thyristorised inverters.
la
costly. The size and the cost of the circuit can be reduced to some extent if the operating
frequency is increased but then the inverter grade thyristors which are special thyristors
lls
Typical applications
w
Uninterruptible power supply (UPS), Industrial (induction motor) drives, Traction, HVDC.
w
There are different basis of classification of inverters. Inverters are broadly classified
as current source inverter and voltage source inverters. Moreover it can be classified on the
basis of devices used (SCR or gate commutation devices), circuit configuration (half bridge
or full bridge), nature of output voltage (square, quasi square or sine wave), type of circuit
(switched mode PWM or resonant converters) etc.
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m
co
s.
bu
la
yl
l ls
.a
w
w
w
Fig. Load voltage and current waveforms with resistive load for half bridge inverter.
Let us divide the operation into four intervals. We start explanation from the second lime
interval II to t2 because at the beginning of this interval transistor Q1 will start conducting.
Interval II (tl  t2): Q1 is turned on at instant tl, the load voltage is equal to + V/2 and the
positive load current increases gradually. At instant t2 the load current reaches the peak
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value. The transistor Q1 is turned off at this instant. Due to the same polarity of load voltage
and load current the energy is stored by the load. Refer Fig. 8.3(a).
Fig.8.3 (a) circuit in interval II (tl  t2) (b) Equivalent circuit in interval III (t2  t3)
Interval III (t2 t3): Due to inductive load, the load current direction will be maintained
same even after Q1 is turned off. The self induced voltage across the load will be negative.
The load current flows through lower half of the supply and D2 as shown in Fig. 8.3(b). In
m
this interval the stored energy in load is fed back to the lower half of the source and the load
co
voltage is clamped to V/2.
Fig.8.4
At the instant t3, the load current goes to zero, indicating that all the stored energy has been
returned back to the lower half of supply. At instant t3 ' Q2 is turned on. This will produce a
negative load voltage v0 =  V/2 and a negative load current. Load current reaches a negative
peak at the end of this interval. (See Fig. 8.4(a)).
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m
co
s.
bu
la
yl
l ls
.a
w
Fig.8.5: Current and voltage waveforms for half bridge inverter with RL load
w
Conduction period of the transistors depends upon the load power, factor. For purely
inductive load, a transistor conducts only for T0/2 or 90 o. Depending on the load power
factor, that conduction period of the transistor will vary between 90 to 1800 ( 1800 for purely
resistive load).
8.4 Fourier analysis of the Load Voltage Waveform of a Half Bridge Inverter
Assumptions:
The load voltage waveform is a perfect square wave with a zero average value.
The load voltage waveform does not depend on the type of load.
an, bn and cn are the Fourier coefficients.
n is the displacement angle for the nth harmonic component of output voltage.
Total dc input voltage to the inverter is V volts.
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Fig.8.6
m
co
s.
bu
la
yl
lls
.a
w
w
w
Page 198
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m
co
s.
bu
la
yl
ls
This is the peak amplitude of nth harmonic component of the output voltage and
n = tan1 0 = 0
and Vo (av) = 0
Therefore the instantaneous output voltage of a half bridge inverter can be expressed In
Fourier series form as,
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Equation indicates that the frequency spectrum of the output voltage waveform consists of
only odd order harmonic components. i.e. 1,3,5,7 ....etc. The even order harmonics are
automatically cancelled out.
m
co
RMS value of fundamental component of output voltage
s.
bu
la
yl
l ls
.a
The output of practical inverters contains harmonics and the quality of an inverter is normally
evaluated in terms of following performance parameters:
w
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m
co
Distortion Factor DF
s.
bu
la
yl
lls
.a
w
w
w
Page 201
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In order to develop a positive voltage + V across the load, the transistors Q1, and O2 are
turned on simultaneously whereas to have a negative voltage  V across the load we need to
turn on the devices Q3 and Q4.
Diodes D1, D2, D3, and D4 are known as the feedback diodes, because energy feedback
takes place through these diodes when the load is inductive.
m
co
s.
bu
Fig.8.7: single phase full bridge inverter
With the purely resistive load the bridge inverter operates in two different intervals In one
cycle of the output.
lls
Mode I (0  T0/2):
.a
The transistors 01 and O2 conduct simultaneously in this mode. The load voltage is
w
+ V and load current flows from A to B. The equivalent circuit for mode 1 is as shown in Fig.
w
8.8 (A). At t = To/2 , 0, and Q2 are turned off and Q3 and Q4 are turned on.
w
Fig.8.8
At t = T0/2, Q3 and Q4 are turned on and Q1 and Q2 are turned off. The load voltage is V
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and load current flows from B to A. The equivalent circuit for mode II is as shown in Fig.
9.5.1(b). At t = To, Q3 and Q4 are turned off and Q1 and Q2 are turned on again.
As the load is resistive it does not store any energy. Therefore the feedback diodes are not
effective here.
The voltage and current waveforms with resistive load are as shown in Fig. 9.5.2.
m
co
s.
bu
la
yl
l ls
.a
w
w
w
The important observations from the waveforms of Fig. 8.10 are as follows:
(i) The load current is in phase with the load voltage
(ii) The conduction period for each transistor is 1t radians or 1800
(iii) Peak current through each transistor = V/R.
(iv) Average current through each transistor = V/2R
(v) Peak forward voltage across each transistor = V volts.
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The operation of the circuit can be divided into four intervals or modes. The
waveforms are as shown in Fig. 8.13.
The output voltage Vo == + V as shown in Fig 8.11(a). The load current starts increasing
exponentially due to the inductive nature of the load.
The instantaneous current through Q1 and Q2 is equal to the instantaneous load current. The
energy is stored into the inductive load during this interval of operation.
m
co
s.
bu
la
yl
Fig.8.11
lls
So in order to maintain the flow of current in the same direction there is a self induced
voltage across the load. The polarity of this voltage is exactly opposite to that in the
w
previous mode.
w
Thus output voltage becomes negative equal to  V. But the load current continues to now in
the same direction, through D3 andD4 as shown in Fig. 8.11(b).
Thus the stored energy in the load inductance is returned back to the source in this mode.
The diodes D1 to D4 are therefore known as the feedback diodes.
The load current decreases exponentially and goes to 0 at instant t3 when all the energy
stored ill the load is returned back to supply. D3 and D4 are turned off at t3
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Fig.8.12
At instant t4 or to the transistors Q3 and Q4 are turned off. The load inductance tries to
maintain the load current in the same direction, by inducing a positive load voltage.
m
This will forward bias the diodes D) and D2. The load stored energy is returned back to the
co
input dc supply. The load voltage Vo = + V but the load current remains negative and
decrease exponentially towards 0. This is as shown in Fig. 8.12(b).
s.
At t5 or t1 the load current goes to zero and transistors Q1 and Q2 can be turned on again.
bu
Conduction period of devices:
la
The conduction period with a very highly inductive load, will be T014 or 90 0 for all the
transistors as well as the diodes.
yl
The conduction period of transistors will increase towards To/2.or 1800 with increase in th1
ls
load power factor. (i.e., as the load becomes more and more resistive).
l
.a
w
w
w
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m
co
s.
bu
la
yl
l ls
.a
w
w
w
Fig.8.13. voltage and current waveforms for single phase bridge inverter with RL load.
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m
co
s.
bu
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yl
lls
.a
w
w
w
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co
s.
bu
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yl
lls
.a
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w
w
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m
co
s.
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lls
.a
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w
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m
co
s.
bu
la
yl
lls
.a
w
The circuit diagram of current source inverter is shown in Fig. 8.14. The variable dc voltage
w
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The current IL supplied to the single phase transistorised inverter is adjusted by the
combination of variable dc voltage and inductance L.
The waveforms of base currents and output current io are as shown in Fig. 8.15. When
transistors Q1 and Q2 conduct simultaneously, the output current is positive and equal to + IL.
When transistors Q3 and Q4 conduct simultaneously the output current io =  IL.
But io = 0 when the transistors from same arm i.e. Q( Q4 or Q2 Q3 conduct simultaneously.
m
co
s.
bu
la
yl
l ls
.a
w
w
w
The output current waveform of Fig. 8.15 is a quasisquare waveform. But it is possible to
Obtain a square wave load current by changing the pattern of base driving signals. Such
waveforms are shown in Fig. 8.16.
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Fig.8.16 Waveforms
m
Load Voltage:
The load current waveform in CSI has a defined shape, as it is a square waveform in this
co
case. But the load voltage waveform will be dependent entirely on the nature of the load.
The load voltage with the resistive load will be a square wave, whereas with a highly
s.
inductive load it will be a triangular waveform. The load voltage will contain frequency
bu
components at the inverter frequency f, equal to l/T and other components at multiples of
inverter frequency.
la
The load voltage waveforms for different types of loads are shown in Fig. 8.17.
yl
l ls
.a
w
w
w
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The circuit diagram of a variable DClink inverter is shown in Fig.8.18. This circuit can be
divided into two parts namely a block giving a variable DC voltage and the second part being
the bridge inverter itself.
m
co
s.
bu
la
yl
ls
The components Q, Dm, Land C give out a variable DC output. L and C are the filter
w
components. This variable DC voltage acts as the supply voltage for the bridge inverter.
w
w
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The pulse width (conduction period) of the transistors is maintained constant and the
variation in output voltage is obtained by varying the DC voltage.
The output voltage waveforms with a resistive load for different dc input voltages are shown
in Fig. 8.19.
We know that for a square wave inverter, the rms value of output voltage is given by,
V0 ( rms) = Vdc volts
Hence by varying Vdc, we can vary V0 (rms)
The disadvantage is that an extra converter stage is required to obtain a variable DC voltage
from a fixed DC. This converter can be a chopper.
m
co
s.
bu
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l ls
.a
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w
w
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Recommended questions:
1. What are the differences between half and full bridge inverters?
2. What are the purposes of feedback diodes in inverters?
3. What are the arrangements for obtaining three phase output voltages?
4. What are the methods for voltage control within the inverters?
5. What are the methods of voltage control of Iphase inverters? Explain them briefly.
6. What are the main differences between VSI and CSI?
7. With a neat circuit diagram, explain single phase CSI?
8. The single phase half bridge inverter has a resistive load of R= 2.4 and the dc input
voltage is Vs=48V Determine a) the rms output voltage at the fundamental frequency
Vo1 b) The output power Po c) the average and peak currents of each transistor d) the
peak reverse blocking voltage Vbr of each transistor e) the THD f) the DF g) the HF
and DF of the LOH.
m
co
s.
bu
Unit8
la
yl
AC voltage controllers (ac line voltage controllers) are employed to vary the RMS
w
value of the alternating voltage applied to a load circuit by introducing Thyristors between
w
the load and a constant voltage ac source. The RMS value of alternating voltage applied to a
w
load circuit is controlled by controlling the triggering angle of the Thyristors in the ac voltage
controller circuits.
In brief, an ac voltage controller is a type of thyristor power converter which is used
to convert a fixed voltage, fixed frequency ac input supply to obtain a variable voltage ac
output. The RMS value of the ac output voltage and the ac power flow to the load is
controlled by varying (adjusting) the trigger angle
V0(RMS)
AC Vs AC Variable AC
Input Voltage RMSO/P Voltage
Voltage fs Controller
fs fS
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There are two different types of thyristor control used in practice to control the ac power
flow
OnOff control
Phase control
In phase control the Thyristors are used as switches to connect the load circuit to the
input ac supply, for a part of every input cycle. That is the ac supply voltage is chopped using
m
Thyristors during a part of each input cycle.
co
The thyristor switch is turned on for a part of every half cycle, so that input supply
voltage appears across the load and then turned off during the remaining part of input half
cycle to disconnect the ac supply from the load. s.
By controlling the phase angle or the trigger angle (delay angle), the output RMS
bu
voltage across the load can be controlled.
The trigger delay angle is defined as the phase angle (the value of t) at which the
la
Thyristors in ac voltage controllers are line commutated (phase commutated) since the input
supply is ac. When the input ac voltage reverses and becomes negative during the negative
.a
half cycle the current flowing through the conducting thyristor decreases and falls to zero.
Thus the ON thyristor naturally turns off, when the device current falls to zero.
w
Phase control Thyristors which are relatively inexpensive, converter grade Thyristors
w
which are slower than fast switching inverter grade Thyristors are normally used.
w
For applications upto 400Hz, if Triacs are available to meet the voltage and current
ratings of a particular application, Triacs are more commonly used.
Due to ac line commutation or natural commutation, there is no need of extra
commutation circuitry or components and the circuits for ac voltage controllers are very
simple.
Due to the nature of the output waveforms, the analysis, derivations of expressions for
performance parameters are not simple, especially for the phase controlled ac voltage
controllers with RL load. But however most of the practical loads are of the RL type and
hence RL load should be considered in the analysis and design of ac voltage controller
circuits.
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m
Applications of Ac Voltage Controllers
co
Lighting / Illumination control in ac power circuits.
Induction heating.
Industrial heating & Domestic heating.
s.
bu
Transformer tap changing (on load transformer tap changing).
Speed control of induction motors (single phase and poly phase ac induction motor
la
control).
AC magnet controls.
yl
ls
The basic principle of onoff control technique is explained with reference to a single
w
phase full wave ac voltage controller circuit shown below. The thyristor switches T1 and T2
are turned on by applying appropriate gate trigger pulses to connect the input ac supply to the
w
load for n number of input cycles during the time interval tON . The thyristor switches T1
w
and T2 are turned off by blocking the gate trigger pulses for m number of input cycles
during the time interval tOFF . The ac controller ON time tON usually consists of an integral
number of input cycles.
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Vs n m
wt
Vo
io
wt
wt
m
ig2 Gate pulse of T2
co
wt
s.
Fig 6.2: Waveforms
bu
R = RL = Load Resistance
la
Example
Referring to the waveforms of ONOFF control technique in the above diagram,
yl
n = Two input cycles. Thyristors are turned ON during tON for two input cycles.
ls
m = One input cycle. Thyristors are turned OFF during tOFF for one input cycle
l
.a
w
w
w
Thyristors are turned ON precisely at the zero voltage crossings of the input supply.
The thyristor T1 is turned on at the beginning of each positive half cycle by applying the gate
trigger pulses to T1 as shown, during the ON time tON . The load current flows in the positive
direction, which is the downward direction as shown in the circuit diagram when T1 conducts.
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The thyristor T2 is turned on at the beginning of each negative half cycle, by applying gating
signal to the gate of T2 , during tON . The load current flows in the reverse direction, which is
the upward direction when T2 conducts. Thus we obtain a bidirectional load current flow
(alternating load current flow) in a ac voltage controller circuit, by triggering the thyristors
alternately.
This type of control is used in applications which have high mechanical inertia and
high thermal time constant (Industrial heating and speed control of ac motors). Due to zero
voltage and zero current switching of Thyristors, the harmonics generated by switching
actions are reduced.
For a sine wave input supply voltage,
vs = Vm sin t = 2VS sin t
V
VS = RMS value of input ac supply = m = RMS phase supply voltage.
2
If the input ac supply is connected to load for n number of input cycles and
disconnected for m number of input cycles, then
m
tON = n T , tOFF = m T
co
1 s.
Where T = = input cycle time (time period) and
f
bu
f = input supply frequency.
tON = controller on time = n T .
la
tON t
Output RMS voltage VO( RMS ) = Vi( RMS ) = VS ON
w
TO TO
w
(i) To derive an expression for the rms value of output voltage, for onoff control
method.
t
1 ON 2 2
V Sin t.d ( t )
TO t=0 m
Output RMS voltage VO( RMS ) =
tON
Vm 2
VO( RMS ) = Sin 2 t.d ( t )
TO 0
1 Cos 2
Substituting for Sin 2 =
2
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tON
Vm 2 1 Cos 2 t
VO( RMS ) =
TO 2 d ( t )
0
t tON
Vm 2 ON
VO( RMS ) = d ( t ) Cos 2 t.d ( t )
2TO 0 0
tON tON
Vm 2 Sin 2 t
VO( RMS ) = ( t )
2TO 0
2 0
m
Vm 2 sin 2 tON sin 0
VO( RMS ) = ( tON 0 )
2TO 2
co
Now tON = an integral number of input cycles; Hence
tON = T , 2T ,3T , 4T ,5T ,..... & tON = 2 , 4 , 6 ,8 ,10 ,......
s.
bu
Where T is the input supply time period (T = input cycle time period). Thus we note that
la
sin 2 tON = 0
yl
Vm 2 tON Vm tON
VO( RMS ) = =
lls
2 TO 2 TO
tON t
.a
Vm
Where Vi( RMS ) = = VS = RMS value of input supply voltage;
2
w
tON tON nT n
= = = = k = duty cycle (d).
TO tON + tOFF nT + mT ( n + m )
n
VO( RMS ) = VS =V k
(m + n) S
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Vm n
VO( RMS ) = =V k = VS k
2 ( m + n ) i( RMS )
Duty Cycle
t tON nT
k = ON = =
TO ( tON + tOFF ) ( m + n ) T
m
n
Where, k =
co
= duty cycle (d).
(m + n)
s.
bu
Z RL
.a
PO = I O2 ( RMS ) RL
w
w
I O2 ( RMS ) RL
PF = ; I S = I in( RMS ) = RMS input supply current.
Vi ( RMS ) I in( RMS )
Hence, RMS supply current = RMS load current; I in( RMS ) = I O( RMS ) .
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n
PF = k =
m+n
m
co
0 2 3 t
IT ( Avg ) =
n
2 ( m + n ) 0
I m sin t.d ( t )
s.
bu
la
nI m
sin t.d ( t )
2 ( m + n ) 0
IT ( Avg ) =
yl
lls
nI m
IT ( Avg ) = cos t
2 ( m + n )
.a
0
w
nI m
IT ( Avg ) = [ cos + cos 0]
2 ( m + n )
w
w
nI m
IT ( Avg ) = ( 1) + 1
2 ( m + n )
n
IT ( Avg ) = [ 2I m ]
2 ( m + n )
Imn k .I
IT ( Avg ) = = m
(m + n)
tON n
k = duty cycle = =
( tON + tOFF ) ( n + m )
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Imn k .I
IT ( Avg ) = = m,
(m + n)
Vm
Where I m = = maximum or peak thyristor current.
RL
1
nI m2
2
IT ( RMS ) = sin 2 t.d ( t )
2 ( n + m ) 0
om
1
nI m2
(1 cos 2 t ) d t 2
IT ( RMS ) = ( )
2 ( n + m ) 0 2
nI m2
s
.c 1
2
bu
IT ( RMS ) = d ( t ) cos 2 t.d ( t )
4 ( n + m ) 0 0
la
1
nI m2
sin 2 t
2
yl
IT ( RMS ) = ( t )
4 ( n + m ) 2
0
lls
0
.a
1
nI m2 sin 2 sin 0
2
IT ( RMS ) = ( 0 )
w
4 ( n + m ) 2
w
1
w
nI m2 2
IT ( RMS ) = { 0 0}
4 ( n + m )
1 1
nI m2 2
nI m2 2
IT ( RMS ) = =
4 ( n + m ) 4 ( n + m)
Im n I
IT ( RMS ) = = m k
2 (m + n) 2
Im
IT ( RMS ) = k
2
Problem
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1. A single phase full wave ac voltage controller working on ONOFF control technique
has supply voltage of 230V, RMS 50Hz, load = 50. The controller is ON for 30
cycles and off for 40 cycles. Calculate
ON & OFF time intervals.
RMS output voltage.
Input P.F.
Average and RMS thyristor currents.
1 1
T= = = 0.02sec , T = 20ms .
f 50 Hz
m
m = number of input cycles during which controller is OFF; m = 40 .
co
tON = n T = 30 20ms = 600ms = 0.6sec
s.
tON = n T = 0.6sec = controller ON time.
bu
n 30
Duty cycle k = = = 0.4285
( m + n ) ( 40 + 30 )
.a
n
VO( RMS ) = Vi ( RMS )
(m + n)
w
w
30 3
VO( RMS ) = 230V = 230
( 30 + 40 ) 7
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n 30
PF = = = 0.4285
( m + n ) 70
PF = 0.654653
Vm 2 230 325.269
where Im = = =
RL 50 50
m
6.505382 3
IT ( Avg ) =
co
7
IT ( Avg ) = 0.88745 A
s.
bu
la
IT ( RMS ) = m = m k=
2 (m + n) 2 2 7
l ls
.a
IT ( RMS ) = 2.129386 A
w
single phase half wave ac voltage controller (unidirectional controller) circuit shown in the
below figure.
The half wave ac controller uses one thyristor and one diode connected in parallel
across each other in opposite direction that is anode of thyristor T1 is connected to the
cathode of diode D1 and the cathode of T1 is connected to the anode of D1 . The output
voltage across the load resistor R and hence the ac power flow to the load is controlled by
varying the trigger angle .
The trigger angle or the delay angle refers to the value of t or the instant at
which the thyristor T1 is triggered to turn it ON, by applying a suitable gate trigger pulse
between the gate and cathode lead.
The thyristor T1 is forward biased during the positive half cycle of input ac supply. It
can be triggered and made to conduct by applying a suitable gate trigger pulse only during the
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positive half cycle of input supply. When T1 is triggered it conducts and the load current
flows through the thyristor T1 , the load and through the transformer secondary winding.
By assuming T1 as an ideal thyristor switch it can be considered as a closed switch
when it is ON during the period t = to radians. The output voltage across the load
follows the input supply voltage when the thyristor T1 is turnedon and when it conducts from
t = to radians. When the input supply voltage decreases to zero at t = , for a
resistive load the load current also falls to zero at t = and hence the thyristor T1 turns off
at t = . Between the time period t = to 2 , when the supply voltage reverses and
becomes negative the diode D1 becomes forward biased and hence turns ON and conducts.
The load current flows in the opposite direction during t = to 2 radians when D1 is ON
and the output voltage follows the negative half cycle of input supply.
m
co
s.
bu
la
yl
vs = Vm sin t
Vm
VS = Vin( RMS ) = = RMS value of secondary supply voltage.
2
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vo = vL = 0 ; for t = 0 to
vo = vL = Vm sin t ; for t = to 2 .
vo Vm sin t
io = iL = = ; for t = to 2 .
RL RL
io = iL = 0 ; for t = 0 to .
om
2
1
.c
VO( RMS ) = Vm sin t.d ( t )
2 2
2 s
bu
2
Vm 2 1 cos 2 t
VO( RMS ) = .d ( t )
la
2 2
yl
lls
2
Vm 2
VO( RMS ) = (1 cos 2 t ) .d ( t )
4
.a
w
Vm 2 2
VO( RMS ) = ( ) cos 2 t.d t
w
d t
2
w
2 2
Vm sin 2 t
VO( RMS ) = ( t )
2 2
2
sin 2 t
( 2 )
Vm
VO( RMS ) =
2 2
sin 4 sin 2
( 2 )
Vm
VO( RMS ) = ;sin 4 = 0
2 2 2
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Vm sin 2
VO( RMS ) = ( 2 ) +
2 2
Vm sin 2
VO( RMS ) = ( 2 ) +
2 2 2
Vm 1 sin 2
VO( RMS ) = ( 2 ) +
2 2 2
1 sin 2
VO( RMS ) = Vi( RMS ) ( 2 ) +
2 2
m
1 sin 2
VO( RMS ) = VS ( ) +
co
2
2 2
Note: Output RMS voltage across the load is controlled by changing ' ' as indicated by the
yl
Vm 1 sin 2
VO( RMS ) = ( 2 ) +
2 2
w
1 sin 2
VO( RMS ) = VS ( 2 ) +
2 2
By using the expression for VO ( RMS ) we can obtain the control characteristics, which is
the plot of RMS output voltage VO ( RMS ) versus the trigger angle . A typical control
characteristic of single phase halfwave phase controlled ac voltage controller is as shown
below
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300
6 ( 6)
; 1 0.992765 VS
600 ; ( 2 ) 0.949868 VS
3 6
900 ; ( 3 ) 0.866025 VS
2 6
1200 2 ; ( 4 ) 0.77314 VS
3 6
1500 5 ; ( 5 ) 0.717228 VS
6 6
1800 ; ( 6 ) 0.707106 VS
6
VO(RMS)
100% VS 70.7% VS
60% VS
m
co
20% VS
s.
bu
0 60 120 180
Trigger angle in degrees
la
Fig 6.5: Control characteristics of single phase halfwave phase controlled ac voltage controller
yl
Note: We can observe from the control characteristics and the table given above that the
lls
range of RMS output voltage control is from 100% of VS to 70.7% of VS when we vary the
trigger angle from zero to 180 degrees. Thus the half wave ac controller has the drawback
.a
1
Vm sin t.d ( t )
2
VO( dc ) =
2
V
VO( dc ) = m
2 sin t.d ( t )
2
V
VO( dc ) = m cos t
2
Vm
VO( dc ) = [ cos 2 + cos ] ; cos 2 = 1
2
Vm
Vdc = [ cos 1] ; Vm = 2VS
2
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2VS
Hence Vdc = ( cos 1)
2
Vm
When ' ' is varied from 0 to . Vdc varies from 0 to
m
Because the RMS value of ac output voltage can be varied from a maximum of 100%
co
of VS at a trigger angle = 0 to a low of 70.7% of VS at = Radians .
s.
These drawbacks of single phase half wave ac voltage controller can be over come by
bu
using a single phase full wave ac voltage controller.
Problem
1. A single phase halfwave ac voltage controller has a load resistance R = 50 ; input ac
supply voltage is 230V RMS at 50Hz. The input supply transformer has a turns ratio
of 1:1. If the thyristor T1 is triggered at = 600 . Calculate
RMS output voltage.
Output power.
RMS load current and average load current.
Input power factor.
Average and RMS thyristor current.
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Given,
m
V p = 230V , RMS primary supply voltage.
f = Input supply frequency = 50Hz.
co
RL = 50
= 600 =
radians.
s.
bu
3
VS = RMS secondary voltage.
la
Vp Np
yl
1
= = =1
VS NS 1
lls
.a
Therefore V p = VS = 230V
w
2
1
VO( RMS ) = V
2
sin 2 t.d ( t )
2
m
1 sin 2
VO( RMS ) = VS ( 2 ) +
2 2
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1 sin1200
VO( RMS ) = 230 2 +
2 3 2
1
VO( RMS ) = 230 [5.669] = 230 0.94986
2
m
Output Load Power PO
co
PO = I O2 ( RMS ) RL = ( 4.36939 ) 50 = 954.5799 Watts
s.
2
bu
PO = 0.9545799 KW
la
yl
PO
PF =
VS I S
.a
w
954.5799 W
PF = = 0.9498
( 230 4.36939 ) W
Average Output (Load) Voltage
2
1
VO( dc ) = Vm sin t.d ( t )
2
We have obtained the expression for the average / DC output voltage as,
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Vm
VO( dc ) = [ cos 1]
2
2 230 325.2691193
VO( dc ) = cos ( 600 ) 1 = [ 0.5 1]
2 2
325.2691193
VO( dc ) = [ 0.5] = 25.88409 Volts
2
VO( dc ) 25.884094
I O ( dc ) = = = 0.51768 Amps
RL 50
om
Average & RMS Thyristor Currents
iT1
Im
s .c
bu
2 3
la
(2+) t
yl
lls
.a
1
IT ( Avg ) = I m sin t.d ( t )
2
I m
IT ( Avg ) = sin t.d ( t )
2
Im
IT ( Avg ) = ( cos t )
2
Im
IT ( Avg ) = cos ( ) + cos
2
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Im
IT ( Avg ) = [1 + cos ]
2
Vm
Where, I m = = Peak thyristor current = Peak load current.
RL
2 230
Im =
50
I m = 6.505382 Amps
Vm
IT ( Avg ) = [1 + cos ]
2 RL
m
2 230
1 + cos ( 600 )
co
IT ( Avg ) =
2 50
2 230 s.
IT ( Avg ) = [1 + 0.5]
100
bu
IT ( Avg ) = 1.5530 Amps
la
yl
1 2 2
IT ( RMS ) = I m sin t.d ( t )
2
w
I m2 (1 cos 2 t )
w
IT ( RMS ) = .d ( t )
2 2
I m2
IT ( RMS ) = d ( t ) cos 2 t.d ( t )
4
1 sin 2 t
IT ( RMS ) = I m ( t )
4 2
1 sin 2 sin 2
IT ( RMS ) = I m ( )
4 2
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1 sin 2
IT ( RMS ) = I m ( ) +
4 2
Im 1 sin 2
IT ( RMS ) = ( ) +
2 2 2
IT ( RMS ) = +
2 2 3 2
1 2 0.8660254
IT ( RMS ) = 4.6 +
2 3 2
m
co
IT ( RMS ) = 4.6 0.6342 = 2.91746 A
6.5 Single Phase Full Wave Ac Voltage Controller (Ac Regulator) or Rms Voltage
yl
Single phase full wave ac voltage controller circuit using two SCRs or a single triac is
.a
generally used in most of the ac control applications. The ac power flow to the load can be
controlled in both the half cycles by varying the trigger angle ' ' .
w
The RMS value of load voltage can be varied by varying the trigger angle ' ' . The
w
input supply current is alternating in the case of a full wave ac voltage controller and due to
the symmetrical nature of the input supply current waveform there is no dc component of
w
input supply current i.e., the average value of the input supply current is zero.
A single phase full wave ac voltage controller with a resistive load is shown in the
figure below. It is possible to control the ac power flow to the load in both the half cycles by
adjusting the trigger angle ' ' . Hence the full wave ac voltage controller is also referred to as
to a bidirectional controller.
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Fig 6.7: Single phase full wave ac voltage controller (Bidirectional Controller) using SCRs
The thyristor T1 is forward biased during the positive half cycle of the input supply
voltage. The thyristor T1 is triggered at a delay angle of ' ' ( 0 radians ) . Considering
the ON thyristor T1 as an ideal closed switch the input supply voltage appears across the load
m
resistor RL and the output voltage vO = vS during t = to radians. The load current
co
flows through the ON thyristor T1 and through the load resistor RL in the downward direction
during the conduction time of T1 from t = to radians. s.
At t = , when the input voltage falls to zero the thyristor current (which is flowing
bu
through the load resistor RL ) falls to zero and hence T1 naturally turns off . No current flows
in the circuit during t = to ( + ) .
la
yl
The thyristor T2 is forward biased during the negative cycle of input supply and when
thyristor T2 is triggered at a delay angle ( + ) , the output voltage follows the negative
lls
halfcycle of input from t = ( + ) to 2 . When T2 is ON, the load current flows in the
.a
interval (spacing) between the gate trigger pulses of T1 and T2 is kept at radians or 1800. At
w
t = 2 the input supply voltage falls to zero and hence the load current also falls to zero and
w
Instead of using two SCRs in parallel, a Triac can be used for full wave ac voltage
control.
Fig 6.8: Single phase full wave ac voltage controller (Bidirectional Controller) using TRIAC
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c om
Fig 6.9: Waveforms of single phase full wave ac voltage controller
s.
bu
Equations
Input supply voltage
vS = Vm sin t = 2VS sin t ;
la
yl
vO = vL = Vm sin t ;
l
.a
for t = to and t = ( + ) to 2
w
w
iO = O = m = I m sin t ;
RL RL
for t = to and t = ( + ) to 2
(i) To Derive an Expression for the Rms Value of Output (Load) Voltage
The RMS value of output voltage (load voltage) can be found using the expression
2
1
=V = v d ( t ) ;
2 2 2
VO ( RMS ) L ( RMS )
2
L
0
For a full wave ac voltage controller, we can see that the two half cycles of output
voltage waveforms are symmetrical and the output pulse time period (or output pulse
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repetition time) is radians. Hence we can also calculate the RMS output voltage by using
the expression given below.
1
V 2
L ( RMS )
= Vm 2 sin 2 t.d t
0
2
1
V 2 L( RMS ) = v
2
.d ( t ) ;
2
L
0
Hence,
2
1
(Vm sin t ) d ( t ) + (Vm sin t ) d ( t )
2 2
V 2
L( RMS )
=
2 +
om
1 2 2 2
= m
V sin t .d ( t ) + Vm sin t .d ( t )
2 2
.c
2 +
s
bu
Vm 2 1 cos 2 t 2
1 cos 2 t
= d ( t ) + d ( t )
2 2 2
la
+
yl
Vm 2 2 2
= d ( t ) cos 2 t .d ( t ) + d ( t ) cos 2 t.d ( t )
lls
2 2 + +
.a
2 2
Vm 2 sin 2 t sin 2 t
( t ) + ( t )
w
=
4 + 2 2 +
w
w
Vm 2
( ) + ( ) ( sin 2 sin 2 ) ( sin 4 sin 2 ( + ) )
1 1
=
4 2 2
Vm 2 1 1
=
4 2 ( ) 2 ( 0 sin 2 ) 2 ( 0 sin 2 ( + ) )
Vm 2 sin 2 sin 2 ( + )
= 2 ( ) + +
4 2 2
Vm 2 sin 2 sin ( 2 + 2 )
= 2 ( ) + +
4 2 2
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Vm 2 sin 2 1
=
4 2 ( ) + 2 + 2 ( sin 2 .cos 2 + cos 2 .sin 2 )
Therefore,
Vm 2 sin 2 sin 2
VL2( RMS ) =
4 2 ( ) + 2 + 2
Vm 2
= 2 ( ) + sin 2
4
Vm 2
m
V 2 L( RMS ) = ( 2 2 ) + sin 2
4
co
Taking the square root, we get
s.
bu
Vm
VL( RMS ) = ( 2 2 ) + sin 2
2
la
yl
Vm
VL( RMS ) = ( 2 2 ) + sin 2
2 2
lls
.a
Vm 1
VL( RMS ) = ( 2 2 ) + sin 2
2
w
2
w
Vm 1 sin 2
2 ( ) + 2
w
VL( RMS ) =
2 2
Vm 1 sin 2
VL( RMS ) = ( ) +
2 2
1 sin 2
VL( RMS ) = Vi( RMS ) ( ) +
2
1 sin 2
VL( RMS ) = VS ( ) +
2
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Maximum RMS voltage will be applied to the load when = 0 , in that case the full
sine wave appears across the load. RMS load voltage will be the same as the RMS supply
V
voltage = m . When is increased the RMS load voltage decreases.
2
Vm 1 sin 2 0
VL( RMS ) = ( 0 ) +
=0 2 2
1
( ) +
Vm 0
VL( RMS ) =
=0 2 2
Vm
VL( RMS ) = = Vi ( RMS ) = VS
=0 2
m
The output control characteristic for a single phase full wave ac voltage controller
co
with resistive load can be obtained by plotting the equation for VO( RMS )
s.
Control Characteristic of Single Phase FullWave Ac Voltage Controller with Resistive
bu
Load
la
The control characteristic is the plot of RMS output voltage VO( RMS ) versus the trigger
yl
angle ; which can be obtained by using the expression for the RMS output voltage of a full
lls
1 sin 2
VO( RMS ) = VS ( ) + ;
2
w
Vm
Where VS = = RMS value of input supply voltage
w
300
6 ( 6)
; 1 0.985477 VS 98.54% VS
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1800 (
; 6
6 ) 0 VS 0 VS
VO(RMS)
VS
0.6VS
0.2 VS
m
0 60 120 180
co
Trigger angle in degrees
s.
We can notice from the figure, that we obtain a much better output control
characteristic by using a single phase full wave ac voltage controller. The RMS output
bu
voltage can be varied from a maximum of 100% VS at = 0 to a minimum of 0 at
la
= 1800 . Thus we get a full range output voltage control by using a single phase full wave
ac voltage controller.
yl
ls
In the single phase full wave ac voltage controller circuit using two SCRs or
.a
Thyristors T1 and T2 in parallel, the gating circuits (gate trigger pulse generating circuits) of
w
Thyristors T1 and T2 must be isolated. Figure shows a pulse transformer with two separate
w
G1
Gate
Trigger K1
Pulse G2
Generator
K2
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6.6 Single Phase Full Wave Ac Voltage Controller (Bidirectional Controller) With RL
Load
In this section we will discuss the operation and performance of a single phase full
wave ac voltage controller with RL load. In practice most of the loads are of RL type. For
example if we consider a single phase full wave ac voltage controller controlling the speed of
a single phase ac induction motor, the load which is the induction motor winding is an RL
type of load, where R represents the motor winding resistance and L represents the motor
winding inductance.
A single phase full wave ac voltage controller circuit (bidirectional controller) with an
RL load using two thyristors T1 and T2 ( T1 and T2 are two SCRs) connected in parallel is
shown in the figure below. In place of two thyristors a single Triac can be used to implement
a full wave ac controller, if a suitable Traic is available for the desired RMS load current and
the RMS output voltage ratings.
m
co
s.
bu
la
yl
ls
Fig 6.11: Single phase full wave ac voltage controller with RL load
l
.a
The thyristor T1 is forward biased during the positive half cycle of input supply. Let
w
the positive half cycle of input supply. The output voltage across the load follows the input
w
supply voltage when T1 is ON. The load current iO flows through the thyristor T1 and through
the load in the downward direction. This load current pulse flowing through T1 can be
considered as the positive current pulse. Due to the inductance in the load, the load current iO
flowing through T1 would not fall to zero at t = , when the input supply voltage starts to
become negative.
The thyristor T1 will continue to conduct the load current until all the inductive energy
stored in the load inductor L is completely utilized and the load current through T1 falls to
zero at t = , where is referred to as the Extinction angle, (the value of t ) at which the
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load current falls to zero. The extinction angle is measured from the point of the beginning
of the positive half cycle of input supply to the point where the load current falls to zero.
The thyristor T1 conducts from t = to . The conduction angle of T1 is
= ( ) , which depends on the delay angle and the load impedance angle . The
waveforms of the input supply voltage, the gate trigger pulses of T1 and T2 , the thyristor
current, the load current and the load voltage waveforms appear as shown in the figure below.
m
co
s.
bu
la
yl
lls
.a
is the extinction angle which depends upon the load inductance value.
w
w
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m
co
s.
bu
la
yl
lls
.a
w
w
w
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Waveforms of single phase full wave ac voltage controller with RL load for > .
Discontinuous load current operation occurs for > and < ( + ) ;
i.e., ( ) < , conduction angle < .
m
co
s.
bu
la
yl
lls
.a
w
w
w
Fig 6.14: Waveforms of Input supply voltage, Load Current, Load Voltage and Thyristor Voltage across T1
Note
The RMS value of the output voltage and the load current may be varied by varying
the trigger angle .
This circuit, AC RMS voltage controller can be used to regulate the RMS voltage
across the terminals of an ac motor (induction motor). It can be used to control the
temperature of a furnace by varying the RMS output voltage.
For very large load inductance L the SCR may fail to commutate, after it is triggered
and the load voltage will be a full sine wave (similar to the applied input supply
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voltage and the output control will be lost) as long as the gating signals are applied to
the thyristors T1 and T2 . The load current waveform will appear as a full continuous
sine wave and the load current waveform lags behind the output sine wave by the load
power factor angle .
(i) To Derive an Expression for the Output (Inductive Load) Current, During
t = to When Thyristor T1 Conducts
Considering sinusoidal input supply voltage we can write the expression for the
supply voltage as
Let us assume that the thyristor T1 is triggered by applying the gating signal to T1 at
m
t = . The load current which flows through the thyristor T1 during t = to can be
co
found from the equation
di
L O + RiO = Vm sin t ;
s.
bu
dt
la
The solution of the above differential equation gives the general expression for the
output load current which is of the form
yl
lls
t
Vm
iO = sin ( t ) + A1e ;
Z
.a
w
Z = R 2 + ( L ) = Load impedance.
2
L
= tan 1 = Load impedance angle (power factor angle of load).
R
L
= = Load circuit time constant.
R
Therefore the general expression for the output load current is given by the equation
R
Vm t
iO = sin ( t ) + A1e L ;
Z
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The value of the constant A1 can be determined from the initial condition. i.e. initial
value of load current iO = 0 , at t = . Hence from the equation for iO equating iO to zero
and substituting t = , we get
R
Vm t
iO = 0 = sin ( ) + A1e L
Z
R
t Vm
Therefore A1e L
= sin ( )
Z
1 Vm
A1 = R Z sin ( )
Lt
e
m
+R
t Vm
A1 = e Z sin ( )
L
co
A1 = e
R ( t )
L Vm
Z sin ( )
s.
bu
la
R ( )
lls
V
A1 = e L m sin ( )
Z
.a
w
Substituting the value of constant A1 from the above equation into the expression for iO , we
w
obtain
R ( ) R
V
w
Vm t
iO = sin ( t ) + e L e L m sin ( ) ;
Z Z
R ( t ) R ( )
V V
iO = m sin ( t ) + e L
e L m sin ( )
Z Z
R
Vm ( t ) Vm
iO = sin ( t ) + e L sin ( )
Z Z
Therefore we obtain the final expression for the inductive load current of a single
phase full wave ac voltage controller with RL load as
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Vm R
( t )
iO = sin ( t ) sin ( ) e L
; Where t .
Z
The above expression also represents the thyristor current iT 1 , during the conduction
time interval of thyristor T1 from t = to .
Vm R
( )
m
iO = 0 = sin ( ) sin ( ) e
L
Z
co
Vm
As 0 we can write
Z s.
R
( )
sin ( ) sin ( ) e =0
L
bu
la
R
( )
sin ( ) = sin ( ) e L
lls
.a
The extinction angle can be determined from this transcendental equation by using
the iterative method of solution (trial and error method). After is calculated, we can
w
is the extinction angle which depends upon the load inductance value. Conduction
w
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vO vO=vS
Vm
m
co
2 3
0 t
s.
bu
iO
la
Im
yl
lls
t
.a
Fig 6.15: Output Voltage And Output Current Waveforms For A Single Phase Full Wave Ac Voltage Controller
With Rl Load For
w
w
Thus we observe that for trigger angle , the load current tends to flow
w
continuously and we have continuous load current operation, without any break in the load
current waveform and we obtain output voltage waveform which is a continuous sinusoidal
waveform identical to the input supply voltage waveform. We lose the control on the output
voltage for as the output voltage becomes equal to the input supply voltage and thus
we obtain
Vm
VO( RMS ) = = VS ; for
2
Hence,
RMS output voltage = RMS input supply voltage for
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(ii) To Derive an Expression For rms Output Voltage VO ( RMS ) of a Single Phase FullWave Ac
Voltage Controller with RL Load.
When > O , the load current and load voltage waveforms become discontinuous as
shown in the figure above.
1
1 2
VO( RMS ) = Vm 2 sin 2 t.d ( t )
m
Output vo = Vm sin t , for t = to , when T1 is ON.
co
Vm 2 (1 cos 2 t )
( )
1
2 s.
VO( RMS ) = d t
bu
2
la
1
V 2
2
yl
1
V 2
sin 2 t
2
VO( RMS ) = m ( t )
w
2 2
w
1
V 2 sin 2 sin 2 2
= m ( ) +
w
VO( RMS )
2 2 2
1
1 sin 2 sin 2 2
VO( RMS ) = Vm ( ) +
2 2 2
1
V 1 sin 2 sin 2 2
VO( RMS ) = m ( ) +
2 2 2
The RMS output voltage across the load can be varied by changing the trigger angle
.
For a purely resistive load L = 0 , therefore load power factor angle = 0 .
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L
= tan 1 =0 ;
R
Extinction angle = radians = 1800
Vm 1 sin 2 V
RMS Output Voltage VO( RMS ) = ( ) + ; m = VS = RMS input
2 2 2
supply voltage.
VO ( RMS )
I O ( RMS ) = = RMS value of load current.
RL
m
I S = I O ( RMS ) = RMS value of input supply current.
co
Output load power
PO = I O2 ( RMS ) RL s.
bu
Input Power Factor
I O2 ( RMS ) RL I O( RMS ) RL
la
PO
PF = = =
VS I S VS I O( RMS ) VS
yl
lls
VO ( RMS ) 1 sin 2
PF = = ( ) +
2
.a
VS
w
iT1
w
Im
2 3
(2+) t
1 1
iT d ( t ) = I m sin t.d ( t )
2
IT ( Avg ) =
2
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Im I
IT ( Avg ) = sin t.d ( t ) = m cos t
2 2
Im I
[ cos + cos ] = m [1 + cos ]
IT ( Avg ) =
2 2
Maximum Average Thyristor Current, for = 0 ,
I
IT ( Avg ) = m
Im 1 sin 2
IT ( RMS ) = ( ) +
om
2
2 2
Im
IT ( RMS ) =
s .c
bu
2
In the case of a single phase full wave ac voltage controller circuit using a Triac with
la
resistive load, the average thyristor current IT ( Avg ) = 0 . Because the Triac conducts in both the
yl
half cycles and the thyristor current is alternating and we obtain a symmetrical thyristor
lls
Performance Parameters of A Single Phase Full Wave Ac Voltage Controller with RL
Load
w
w
t = to is given by
V R
( t )
iO = iT1 = m sin ( t ) sin ( ) e for t
L
;
Z
Where,
Vm = 2VS = Maximum or peak value of input ac supply voltage.
Z = R 2 + ( L ) = Load impedance.
2
L
= tan 1 = Load impedance angle (load power factor angle).
R
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m
1
IT ( Avg ) = iT1 d ( t )
co
2
1 Vm
s. R
( t )
IT ( Avg ) = ( ) ( ) d ( t )
L
bu
sin t sin e
2 Z
la
Vm R
( t )
IT ( Avg ) = sin ( t ) .d ( t ) sin ( )e L d ( t )
yl
2 Z
lls
I V
maximum IT ( Avg ) = m , where I m = m .
w
Z
w
1
IT ( RMS ) = iT21 d ( t )
2
When a Triac is used in a single phase full wave ac voltage controller with RL type of
I
load, then IT ( Avg ) = 0 and maximum IT ( RMS ) = m
2
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PROBLEMS
1. A single phase full wave ac voltage controller supplies an RL load. The input supply
voltage is 230V, RMS at 50Hz. The load has L = 10mH, R = 10, the delay angle of
thyristors T1 and T2 are equal, where 1 = 2 = . Determine
3
a. Conduction angle of the thyristor T1 .
b. RMS output voltage.
c. The input power factor.
Comment on the type of operation.
Given
Vs = 230V , f = 50 Hz , L = 10mH , R = 10 , = 600 , = 1 = 2 =
3
radians, .
m
Vm = 2VS = 2 230 = 325.2691193 V
co
Z = Load Impedance = R 2 + ( L ) = (10 ) + ( L )
2 2 2
s.
bu
L = ( 2 fL ) = ( 2 50 10 103 ) = = 3.14159
la
(10 ) + ( 3.14159 )
2 2
Z= = 109.8696 = 10.4818
yl
lls
Vm 2 230
Im = = = 31.03179 A
.a
Z 10.4818
w
L
Load Impedance Angle = tan 1
w
R
w
= tan 1 = tan ( 0.314159 ) = 17.44059
1 0
10
Trigger Angle > . Hence the type of operation will be discontinuous load current
operation, we get
< ( + )
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R
( )
sin ( ) = sin ( ) e L
In the exponential term the value of and should be substituted in radians. Hence
R
( Rad Rad )
sin ( ) = sin ( ) e L ; Rad =
3
( ) = ( 60 17.44059 ) = 42.55940
10
( )
sin ( 17.44 ) = sin ( 42.5594 ) e
0 0
m
1800 radians, Rad =
1800
co
Assuming = 1900 ;
0 1900
Rad = = = 3.3161
s.
1800 180
bu
L.H.S: sin (190 17.44 ) = sin (172.56 ) = 0.129487
0
la
3.183 3.3161
R.H.S: 0.676354 e 3
= 4.94 104
yl
lls
Assuming = 1830 ;
0 1830
.a
Rad = = = 3.19395
1800 180
w
( ) = 3.19395
w
= 2.14675
3
w
3.183( 2.14675 )
R.H.S: 0.676354e = 7.2876 104
Assuming 1800
0 1800
Rad = = =
1800 180
2
( ) = =
3 3
L.H.S: sin ( ) = sin (180 17.44 ) = 0.2997
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3.183
R.H.S: 0.676354e 3
= 8.6092 104
Assuming = 1960
0 1960
Rad = = = 3.420845
1800 180
Assuming = 197 0
0 197 0
Rad = = = 3.43829
1800 180
m
L.H.S: sin ( ) = sin (197 17.44 ) = 7.69 = 7.67937 103
co
3.183 3.43829
R.H.S: 0.676354e 3
= 4.950386476 104
s.
bu
Assuming = 197.420
0 197.42
Rad = = = 3.4456
la
0
180 180
yl
3.183 3.4456
R.H.S: 0.676354e 3
= 3.2709 104
.a
1 sin 2 sin 2
VO( RMS ) = VS ( ) +
2 2
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PO 3901.716
PF = = = 0.8588
VS I S 230 19.7527
m
2. A single phase full wave controller has an input voltage of 120 V (RMS) and a load
resistance of 6 ohm. The firing angle of thyristor is 2 . Find
co
d. RMS output voltage
e. Power output
.
us
f. Input power factor
g. Average and RMS thyristor current.
b
la
Solution
yl
= = 900 , VS = 120 V, R = 6
2
lls
1
1 sin 2 2
VO = VS +
w
2
w
w
1
1 sin180 2
VO = 120 +
2 2
VO = 84.85 Volts
VO 84.85
IO = = = 14.14 A
R 6
Load Power
PO = I O2 R
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Therefore
Load Power 1200
Input Power Factor = = = 0.707 ( lag )
Input VoltAmp 1696.8
1
Vm sin t.d ( t )
2 R
IT ( Avg ) =
m
Vm
= (1 + cos ) ; Vm = 2VS
co
2 R
=
2 120 s.
[1 + cos 90] = 4.5 A
2 6
bu
RMS thyristor current IT ( RMS )
la
yl
1 Vm2 sin 2 t
d ( t )
2
IT ( RMS ) =
lls
R2
.a
Vm2
(1 cos 2 t ) d t
= 2 ( )
w
2 R 2
w
w
1
V 1 sin 2 2
= m +
2 R 2
1
2VS 1 sin 2 2
= +
2R 2
1
2 120 1 sin180 2
= + = 10 Amps
2 6 2 2
3. A single phase half wave ac regulator using one SCR in antiparallel with a diode feeds 1
kW, 230 V heater. Find load power for a firing angle of 450.
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Solution
= 450 = , VS = 230 V ; PO = 1KW = 1000W
4
At standard rms supply voltage of 230V, the heater dissipates 1KW of output power
Therefore
VO VO VO2
PO = VO I O = =
R R
Resistance of heater
V 2 ( 230 )
2
R= O = = 52.9
PO 1000
RMS value of output voltage
1
1 sin 2 2
VO = VS 2 + ; for firing angle = 450
2 2
co
1
1 sin 90 2
VO = 230 2 + = 224.7157 Volts
2 4 2
s.
bu
RMS value of output current
V 224.9
IO = O = = 4.2479 Amps
la
R 52.9
yl
Load Power
PO = I O2 R = ( 4.25 ) 52.9 = 954.56 Watts
2
lls
.a
4. Find the RMS and average current flowing through the heater shown in figure. The delay
angle of both the SCRs is 450.
w
w
w
SCR1 io
+
1 1 kW, 220V
220V SCR2
heater
ac
Solution
= 450 = , VS = 220 V
4
Resistance of heater
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V 2 ( 220 )
2
R= = = 48.4
R 1000
1 sin 90
VO = 220 +
4 2
1 1
VO = 220 + = 209.769 Volts
4 2
m
VO 209.769
RMS current flowing through heater = = = 4.334 Amps
R 48.4
co
Average current flowing through the heater I Avg = 0
s.
bu
5. A single phase voltage controller is employed for controlling the power flow from 220 V,
50 Hz source into a load circuit consisting of R = 4 and L = 6 mH. Calculate the following
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Solution
w
For control of output power, minimum angle of firing angle is equal to the load
w
impedance angle
w
= , load angle
L 1 6
= tan 1 = tan = 56.3
0
R 4
Maximum value of RMS load current occurs when = = 56.30 . At this value of the
Maximum value of RMS load current
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VS 220
IO = = = 30.5085 Amps
Z 42 + 6 2
PO 3723.077
Power Factor = = = 0.5547
Input VA 6711.87
Average thyristor current will be maximum when = and conduction angle = 1800 .
Therefore maximum value of average thyristor current
+
1 Vm
IT ( Avg ) = sin ( t ) d ( t )
2 Z
m
Vm R
( t )
co
iO = iT1 = sin ( t ) sin ( ) e
L
Note:
Z
At = 0 ,
V
s.
bu
iT1 = iO = m sin ( t )
Z
la
Vm +
IT ( Avg ) = cos ( t )
yl
2 Z
lls
Vm
IT ( Avg ) = cos ( + ) + cos ( )
2 Z
.a
But = ,
w
Vm V V
IT ( Avg ) = cos ( ) + cos ( 0 ) = m [ 2] = m
2 Z 2 Z Z
w
w
Vm 2 220
IT ( Avg ) = = = 13.7336 Amps
Z 42 + 62
+ 2
1 Vm
ITM = sin ( t ) d ( t )
2 Z
Vm2
+
1 cos ( 2 t 2 )
ITM = d ( t )
2 Z 2 2
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+
Vm2 sin ( 2 t 2 )
ITM = t
4 Z 2 2
Vm2
ITM = [ + 0]
4 Z 2
Vm 2 220
ITM = = = 21.57277 Amps
2 Z 2 42 + 62
Recommended questions:
1. Discuss the operation of a single phase controller supplying a resistive load, and
controlled by the onoff method of control. Also highlight the advantages and
m
disadvantages of such a control. Draw the relevant waveforms.
co
2. What phase angle control is as applied to single phase controllers? Highlight the
advantages and disadvantages of such a method of control. Draw all the wave forms.
s.
3. What are the effects of load inductance on the performance of voltage controllers?
bu
4. Explain the meaning of extinction angle as applied to single phase controllers supplying
inductive load with the help of waveforms.
la
5. What are unidirectional controllers? Explain the operation of the same with the help of
waveforms and obtain the expression for the RMS value of the output voltage. What are
yl
6. What are bidirectional controllers explain the operation of the same with the help of
waveforms and obtain the expression for the R<S value of the output voltage. RMS value
.a
7. The AC Voltage controller shown below is used for heating a resistive load of 5 and
w
the input voltage Vs = 120 V (rms). The thyristor switch is on for n=125 cycles and is off
w
for m = 75 cycles. Determine the RMS output voltage Vo, the input factor and the
average and RMS thyristor current.
8. T1
i. + D +Vo
~ Vs
a. R
b. (load)
ii. 
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in the problem above R=4, Vs =208 V (rms) if the desired output power is 3 KW,
determine the duty cycle K and the input power factor.
9. The single phases half wave controller shown in the figure above has a resistive load of
R=5 and the input voltage Vs=120 V(rms), 50 Hz. The delay angle of the thyristor is .
Determine the RMS voltage, the output Vo input power factor and the average input
current. Also derive the expressions for the same.
10. The single phase unidirectional controller in the above problem, has a resistive load of 5
and the input voltage Vs = 208 V (rms). If the desired output power is 2 KW, calculate
the delay angle of the thyristor and the input power factor.