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Input And Output Characteristic of an NPN Transistor in

Common Emitter (CE) Configuration

Sharath S
The most widespread and common use of transistors is as amplifiers in
electronic circuits. Here we will study the input and output characteristic I-V
curves for a BC107 NPN transistor in common emitter configuration and use
the data obtained to calculate dynamic input and output resistances and the
current gain for the same.

Experiment: The respective I-V curves are allotted

The BC107 is a silicon based Bipolar from the data for the input and the
Junction Transmitter(BJT) of the npn output characteristics.
category. To study its input and output Dynamic resistance is obtained by
characteristics, it is connected in a circuit calculating V/I at the point of
with its Base-Emitter (BE) or input junction curving of the I-V graph for each curve.
forward biased and its Collector Emitter(CE)Current gain is given by:
output junction reverse biased. The
quantities measured are: Potential drop = IC/IB
across BE Junction (VBE), Base Current(IB),
potential drop across CE Junction (VCE) Where Ic is the steady current for each
and collector current (IC). output curve and IB is the
corresponding base current for each

Input Characteristic

Fig 1 :
Circuit diagram for finding characteristic

Input characteristics are measured by

alteringVBE and finding corresponding IB
keeping VCE fixed.
Input characteristics are measured by
altering VCE and finding corresponding IC
keeping IB fixed. Dynamic input resistance:
For VCE=1V
= 1.818 k
For VCE=1.5V Current Gain
= 1.33 k For IB=60 A
For VCE=2V Steady State IC=20mA
= 1.25 k For IB=120 A
Output Characteristic Steady State IC=30mA

= (30mA-20mA)/(120A-60A)

Dynamic input resistance for BC107:

rDin=1.25k,1.33k,1.818 k

Dynamic output resistance for BC107:

Dynamic Output resistance:
For IB=60 A
Current gain for BC107:
rDout= (1V-0V)/(20mA-0mA)= 50
For IB=120 A
rDout= (1V-0V)/(28mA-0mA)= 34.28