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SEMICONDUCTOR
TECHNICAL DATA
1N4728A
11.3 Watt DO-41 Glass SERIES
Zener Voltage Regulator Diodes
GENERAL DATA APPLICABLE TO ALL SERIES IN
11.3 WATT
THIS GROUP DO-41 GLASS
One Watt Hermetically Sealed Glass
Silicon Zener Diodes 1 WATT
ZENER REGULATOR
DIODES
Specification Features: 3.3100 VOLTS
Complete Voltage Range 3.3 to 100 Volts
DO-41 Package
Double Slug Type Construction
Metallurgically Bonded Construction
Oxide Passivated Die
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230C, 1/16 from
case for 10 seconds
CASE 59-03
FINISH: All external surfaces are corrosion resistant with readily solderable leads
DO-41
POLARITY: Cathode indicated by color band. When operated in zener mode, cathode GLASS
will be positive with respect to anode
MOUNTING POSITION: Any
WAFER FAB LOCATION: Phoenix, Arizona
ASSEMBLY/TEST LOCATION: Seoul, Korea
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Power Dissipation @ TA = 50C PD 1 Watt
Derate above 50C 6.67 mW/C
Operating and Storage Junction Temperature Range TJ, Tstg 65 to +200 C
1.25
L = LEAD LENGTH
L = 1 TO HEAT SINK
PD, MAXIMUM DISSIPATION (WATTS)
1 L = 1/8
L = 3/8
0.75
0.5
0.25
*ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) VF = 1.2 V Max, IF = 200 mA for all types.
+4 10 RANGE VZ @ IZT
7
+2 5
RANGE VZ @ IZT
0 3
2 2
4 1
2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)
175 +6
VZ , TEMPERATURE COEFFICIENT (mV/C)
150 VZ @ IZ
+4 TA = 25C
125
+2 20 mA
100
75 0
0.01 mA
50 1 mA
2 NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
25 NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
0 4
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 3 4 5 6 7 8
L, LEAD LENGTH TO HEAT SINK (INCHES) VZ, ZENER VOLTAGE (VOLTS)
100
70 RECTANGULAR
Ppk , PEAK SURGE POWER (WATTS)
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
1000 1000
TJ = 25C 700 TJ = 25C
500
iZ(rms) = 0.1 IZ(dc)
Z Z , DYNAMIC IMPEDANCE (OHMS)
20 20 20 mA
10 6.2 V 10
7
5 5
2 2
1 1
0.1 0.2 0.5 1 2 5 10 20 50 100 1 2 3 5 7 10 20 30 50 70 100
IZ, ZENER CURRENT (mA) VZ, ZENER CURRENT (mA)
Figure 6. Effect of Zener Current Figure 7. Effect of Zener Voltage
on Zener Impedance on Zener Impedance
10000 400
7000 300
5000
TYPICAL LEAKAGE CURRENT 200
2000 AT 80% OF NOMINAL 0 V BIAS
BREAKDOWN VOLTAGE 100
C, CAPACITANCE (pF)
1000 1 V BIAS
700
500 50
200
20
100
70
50 10
8 50% OF BREAKDOWN BIAS
I R , LEAKAGE CURRENT ( A)
20
4
10 1 2 5 10 20 50 100
7
5 VZ, NOMINAL VZ (VOLTS)
Figure 9. Typical Capacitance versus VZ
2
1
0.7 1000
0.5 MINIMUM
+125C 500
MAXIMUM
0.2
I F , FORWARD CURRENT (mA)
200
0.1
0.07 100
0.05
50
0.02 20 75C
0.01 10
0.007 +25C
0.005 25C
5 150C
0C
0.002 2
0.001 1
3 4 5 6 7 8 9 10 11 12 13 14 15 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VZ, NOMINAL ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
APPLICATION NOTE
Since the actual voltage available from a given zener diode temperature and may be found as follows:
is temperature dependent, it is necessary to determine junc- TJL = JLPD.
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom- JL may be determined from Figure 3 for dc power condi-
mended: tions. For worst-case design, using expected limits of IZ, limits
Lead Temperature, TL, should be determined from: of PD and the extremes of TJ(TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
TL = LAPD + TA.
V = VZ TJ.
LA is the lead-to-ambient thermal resistance (C/W) and PD is
the power dissipation. The value for LA will vary and depends VZ, the zener voltage temperature coefficient, is found from
on the device mounting method. LA is generally 30 to 40C/W Figure 2.
for the various clips and tie points in common use and for Under high power-pulse operation, the zener voltage will
printed circuit board wiring. vary with time and may also be affected significantly by the
The temperature of the lead can also be measured using a zener resistance. For best regulation, keep current excursions
thermocouple placed on the lead as close as possible to the tie as low as possible.
point. The thermal mass connected to the tie point is normally Surge limitations are given in Figure 5. They are lower than
large enough so that it will not significantly respond to heat would be expected by considering only junction temperature,
surges generated in the diode as a result of pulsed operation as current crowding effects cause temperatures to be ex-
once steady-state conditions are achieved. Using the mea- tremely high in small spots, resulting in device degradation
sured value of TL, the junction temperature may be deter- should the limits of Figure 5 be exceeded.
mined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
NOTES:
1. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY.
D 2. POLARITY DENOTED BY CATHODE BAND.
K 3. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
F
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A A 4.07 5.20 0.160 0.205
B 2.04 2.71 0.080 0.107
D 0.71 0.86 0.028 0.034
F F 1.27 0.050
K 27.94 1.100
K
CASE 59-03
DO-41
GLASS
(Refer to Section 10 for Surface Mount, Thermal Data and Footprint Information.)