High Voltage, High Gain IXBK55N300 VCES = 3000V

BiMOSFETTM IXBX55N300 IC110 = 55A

VCE(sat) 3.2V
Monolithic Bipolar
MOS Transistor

TO-264 (IXBK)

Symbol Test Conditions Maximum Ratings G

C
VCES TJ = 25C to 150C 3000 V E
VCGR TJ = 25C to 150C, RGE = 1M 3000 V Tab

VGES Continuous 25 V PLUS247 (IXBX)

VGEM Transient 35 V
IC25 TC = 25C ( Chip Capability ) 130 A
ILRMS TC = 25C ( Lead RMS Limit ) 120 A
IC110 TC = 110C 55 A
G
ICM TC = 25C, 1ms 600 A G C
E Tab
SSOA VGE = 15V, TVJ = 125C, RG = 2 ICM = 110 A
(RBSOA) Clamped Inductive Load @0.8 VCES
G = Gate E = Emitter
TSC VGE = 15V, TJ = 125C, C = Collector Tab = Collector
(SCSOA) RG = 10, VCE = 1250V, Non-Repetitive 10 s
PC TC = 25C 625 W
TJ -55 ... +150 C Features
TJM 150 C z
High Blocking Voltage
Tstg -55 ... +150 C
z
International Standard Packages
z
Low Conduction Losses
TL Maximum Lead Temperature for Soldering 300 C
TSOLD 1.6 mm (0.062 in.) from Case for 10 260 C
z
High Current Handling Capability
z
MOS Gate Turn-On
Md Mounting Torque (TO-264 ) 1.13/10 Nm/lb.in. - Drive Simplicity
FC Mounting Force (PLUS247 ) 20..120/4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g Advantages
z
Easy to Mount
z
Space Savings
Symbol Test Conditions Characteristic Values z
High Power Density
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 1mA, VGE = 0V 3000 V
Applications
VGE(th) IC = 4mA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 A
z
Uninterruptible Power Supplies (UPS)
z
Switch-Mode and Resonant-Mode
TJ = 125C 3 mA
Power Supplies
IGES VCE = 0V, VGE = 25V 200 nA z
Capacitor Discharge Circuits
z
Laser Generators
VCE(sat) IC = 55A, VGE = 15V, Note 1 2.7 3.2 V
TJ = 125C 3.3 V

2011 IXYS CORPORATION, All Rights Reserved DS100158A(11/11)

 IXBK55N300
IXBX55N300
Symbol Test Conditions Characteristic Values
TO-264 Outline
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfS IC = 55A, VCE = 10V, Note 1 32 50 S
Cies 7300 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 275 pF
Cres 83 pF
Qg 335 nC
Qge IC = 55A, VGE = 15V, VCE = 1000V 47 nC
Qgc 130 nC
td(on) 54 ns
Resistive Switching Times, TJ = 25C
tr 307 ns
IC = 110A, VGE = 15V
td(off) 230 ns 1 - GATE
VCE = 1250V, RG = 2
tf 268 ns 2,4 - COLLECTOR
3 - EMITTER

td(on) 52 ns
Resistive Switching Times, TJ = 125C
tr 585 ns
IC = 110A, VGE = 15V
td(off) 215 ns
VCE = 1250V, RG = 2
tf 260 ns

RthJC 0.20 C/W

RthCS 0.15 C/W

PLUS 247TM Outline

Reverse Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max
VF IF = 55A, VGE = 0V, Note 1 2.5 V
trr IF = 28A, VGE = 0V, -diF/dt = 100A/s 1.9 s
IRM VR = 100V, VGE = 0V 54 A

1 - GATE
2 - COLLECTOR
3 - EMITTER

Dim. Millimeter Inches

Min. Max. Min. Max.
Note 1: Pulse Test, t 300s, Duty Cycle, d 2%. A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
Additional provisions for lead-to-lead isolation are required at VCE >1200V. A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
b2 2.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
 IXBK55N300
IXBX55N300

Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C

120 300
VGE = 25V
VGE = 25V
20V
20V
100 250 15V
15V

80 200
IC - Amperes

IC - Amperes
10V

60 10V
150

40 100

20 50

5V 5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8
VCE - Volts VCE - Volts

Fig. 4. Dependence of VCE(sat) on

Fig. 3. Output Characteristics @ T J = 125C Junction Temperature
120 1.8
VGE = 25V
20V VGE = 15V
100 15V 1.6
VCE(sat) - Normalized

80 I C = 110A
1.4
IC - Amperes

60 10V 1.2 I C = 55A

40 1.0

I C = 27.5A
20 0.8
5V

0 0.6
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance
5.5 180

TJ = 25C 160
5.0
140
4.5
120
IC - Amperes
VCE - Volts

4.0 I = 110A 100

C

80
3.5
TJ = 125C
60 25C
3.0 55A - 40C
40

2.5
20
27.5A
2.0 0
5 6 7 8 9 10 11 12 13 14 15 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts VGE - Volts

2011 IXYS CORPORATION, All Rights Reserved

 IXBK55N300
IXBX55N300

Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode

100 180
TJ = - 40C
90 160

80 140
70 25C
120
g f s - Siemens

IF - Amperes
60 125C TJ = 25C
100
50 TJ = 125C
80
40
60
30
40
20

10 20

0 0
0 20 40 60 80 100 120 140 160 180 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
IC - Amperes VF - Volts

Fig. 9. Gate Charge Fig. 10. Capacitance

16
100,000
VCE = 1000V f = 1 MHz
14
I C = 55A
I G = 10mA
12
Capacitance - PicoFarads

10,000

10 Cies
VGE - Volts

8 1,000
Coes
6

4 100

Cres
2

0 10
0 50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40
QG - NanoCoulombs VCE - Volts

Fig. 11. Reverse-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance
120 1

100

80 0.1
IC - Amperes

Z(th)JC - C / W

60

40 0.01

TJ = 125C
20 RG = 2
dv / dt < 10V / ns

0 0.001
200 600 1000 1400 1800 2200 2600 3000 0.0001 0.001 0.01 0.1 1 10
VCE - Volts Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
 IXBK55N300
IXBX55N300
Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs.
Junction Temperature Collector Current
700 700

RG = 2 , VGE = 15V
600 600
VCE = 1250V
TJ = 125C

t r - Nanoseconds
t r - Nanoseconds

500 500 RG = 2 , VGE = 15V

I C = 220A
VCE = 1250V

400 400
I C = 110A
TJ = 25C

300 300

200 200
25 35 45 55 65 75 85 95 105 115 125 40 60 80 100 120 140 160 180 200 220
TJ - Degrees Centigrade IC - Amperes

Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs.
Gate Resistance Junction Temperature
320 300
720 120

310
tf td(off) - - - - 280
700
tr td(on) - - - - 110 RG = 2, VGE = 15V
TJ = 125C, VGE = 15V
300 VCE = 1250V 260
680 VCE = 1250V 100
t d(on) - Nanoseconds

t d(off) - Nanoseconds
290 240
t r - Nanoseconds

t f - Nanoseconds

660 90
280 220
I C = 220A I C = 110A
640 80
270 200

620 70
260 I C = 220A 180

600 I C = 110A 60 250 160

580 50 240 140

560 40 230 120

2 3 4 5 6 7 8 9 10 11 12 13 14 15 25 35 45 55 65 75 85 95 105 115 125
RG - Ohms TJ - Degrees Centigrade

Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs.
Collector Current Gate Resistance
380 320 360 680

360 tf td(off) - - - - 300 tf td(off) - - - -

340 600
RG = 2, VGE = 15V TJ = 125C, VGE = 15V
340 280
VCE = 1250V VCE = 1250V
320 520
t d(off) - Nanoseconds

t d(off) - Nanoseconds

320 260
t f - Nanoseconds
t f - Nanoseconds

I C = 110A

300 240 300 440

280 220 280 360

I C = 220A
260 200
260 280
240 180

240 200
220 160
TJ = 125C, 25C

200 140 220 120

40 60 80 100 120 140 160 180 200 220 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IC - Amperes RG - Ohms

2011 IXYS CORPORATION, All Rights Reserved

 IXBK55N300
IXBX55N300
Fig. 19. Forward-Bias Safe Operating Area Fig. 20. Forward-Bias Safe Operating Area
@ T C = 25C @ T C = 75C
1000 1000
VCE(sat) Limit VCE(sat) Limit

100 100

25s
100s 25s

10 10 100s
ID - Amperes

ID - Amperes
1ms
1ms
1 1

10ms
10ms
0.1 TJ = 150C 0.1 TJ = 150C
100ms
TC = 25C DC TC = 75C 100ms
Single Pulse Single Pulse DC

0.01 0.01
1 10 100 1,000 10,000 1 10 100 1,000 10,000
VDS - Volts VDS - Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: B_55N300 (8T) 11-03-11-C