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ENGINEERING 14
Metallurgical
Engineering Design
Lecture 11
Taguchi Technique II
Signal-to-Noise Ratio
Genichi Taguchi
ROBUST
1
S / N 10 log ( yi )
2
1 1
S / N 10 log ( 2 )
n yi
1
( S m Ve )
S / N 10 log n
Ve
1
where: Sm ( yi ) 2
n
1
Ve ( yi S m )
2
n 1
1 1 1 1 1 27 31 28 86
2 1 2 2 2 16 18 20 54
3 1 3 3 3 19 14 21 54
4 2 1 2 3 23 20 25 68
5 2 2 3 1 25 24 26 75
6 2 3 1 2 19 18 20 57
7 3 1 3 2 29 25 27 81
8 3 2 1 3 15 19 18 52
9 3 3 2 1 16 17 18 51
Total 26 568.5
1
( S m Ve ) 1
(2,465.33 4.34)
S / N 10 log n S / N 10 log 3 22.76
Ve 4.34
1 1
S m ( yi ) 2 S m (27 31 28) 2 2,465.33
n 3
1
1 Ve [(27 2 312 28 2 ) 2,465.33] 4.34
Ve ( yi S m )
2
2
n 1
1 1 1 1 1 22.8
2 1 2 2 2 19.1
3 1 3 3 3 13.9
4 2 1 2 3 19.1
5 2 2 3 1 28.0
6 2 3 1 2 25.6
7 3 1 3 2 22.6
8 3 2 1 3 18.4
9 3 3 2 1 24.6
choose highest
S/N ratio
Source of
SS dof MS f SS P(%)
Variation
A 48.0 2 24.0 30.0 46.4 30.9
B 0.3 (2)
C 2.7 (2)
Therefore, choosing the correct settings for the ceramic material (A) and
the heat treat temperature (D) will reduce the variation in the thickness of
the substrate chips. Machine pressure (B) and mixing time (C) will be
adjusted to move the process mean to the target value.
B Reaction Time 5 10 15
1 1 1 1 1 15 19
2 1 2 2 2 22 26
3 1 3 3 3 5 7
4 2 1 2 3 40 38
5 2 2 3 1 16 17
6 2 3 1 2 17 20
7 3 1 3 2 8 11
8 3 2 1 3 30 25
9 3 3 2 1 28 29