VALLIAMMAI ENGINEERING COLLEGE

SRM Nagar, Kattankulathur 603 203.

DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

ME COMMUNICATION SYSTEMS

CU7202 MIC AND RF SYSTEM DESIGN

UNIT I
Part A
1. Discuss about Injection locking mechanism used in transceiver architecture.
2. Elaborate the noise effects on MOSFET devices.
3. Compare homodyne and heterodyne receiver.
4. Recommend the choice of an ideal substrate material.
5. Contrast Power Match and Noise Match.
6. List out the Effects of non linearity in amplifiers.
7. Examine phase noise and its effects.
8. Identify the ways to reduce threshold voltage in CMOS circuits (threshold reduction).
9. With expression explain Transducer Power Gain.
10. Illustrate the advantages and applications of heterodyne detection.
11. Classify the different types of noise in MOSFET (thermal, flicker).
12. State two port noise theory.
13. Show the formula to calculate sensitivity.
14. Explain common gate Amplifier Configuration.
15. Define IP2 and IP3.
16. What is popcorn noise? How do you control it?
17. How heterodyne reception is superior to homodyne reception.
18. Write short notes on available and Insertion Power gain.
19. Relate Direct up conversion and 2 step conversion.
20. What is the impact of popcorn noise?

Part B
1. Discuss about various Receiver Architectures and compare the performance metrics. (16)

2. Explain Drain Current in Linear and Saturated region of MOSFET. (16)

3. a. Examine the two port noise theory in detail.

b. Distinguish Homodyne detection from heterodyne detection. Explain the principle of a

typical heterodyne receiver with a neat diagram. (8)

4. a) Demonstrate MOS device physics in the short channel regime. (8)

b) Derive Intrinsic MOSFET two-port Noise parameters. (8)

5. a) Illustrate Transceiver Specification distributed over a link. (8)

b) Outline the direct up conversion and two step up conversion process. (8)
6. Describe the following i) Thermal, ii) Shot iii) Flicker and Popcorn noise and its effects on
MOSFET (16)

7. a) Derive the expression for Noise Figure (8)

b) Give an account on i. Phase noise ii. Image rejection iii. Limitations on homodyne
rejection (8)

8. What do you infer from different type of transmitter architectures? (16)

9. a. Suppose that the only limitation in making resistor noise measurements were the ever
present stray capacitance of any physical setup. Build the expression for the mean square
noise for a network consisting of a resistor R shunted by a capacitor C. (6)

b. Inspect the effect of thermal noise in MOSFETs (10)

10. a. Design a simple RC-CR quadrature generator for a 1 KHz centre frequency. First select
the capacitance so that the kT/C noise is 1.6 10^-11 V2, and then determine the necessary
resistance from the centre frequency specification. Is this resistance value reasonable?
Explain. (6)

b. The low pass filter in the image reject mixer would appear to be superfluous because even
the sum frequency components are theoretically rejected by the architecture. Explain why the
filter s nonetheless important in practical mixers of this type. (6)

c. Define THD and SFDR (4)

Part C

1. Suppose an AM signal, A(t) cos wct applied to a single mixer driven by an LO

a) If the LO waveform is given by cos wct , determine the baseband signal.

b) If the LO waveform is given by Sin wct, what happens? Why does this indicate the need
for quadrature down conversion? (16)

2.Why lossy stages lower the output P 1dB of a transmitter but raise its input P 1dB (8)

UNIT II
Part A
1. Discuss the applications of Impedance matching networks.
2. Generate the formulas to calculate the amplifier gain.
3. Compare power match and noise match with respect to LNA topology.
4. Evaluate the role of stability circles plotted on a smith chart in the amplifier design.
5. List out different types of passive IC components.
 6. Distinguish single ended and differential ended LNA.
7. Examine the characteristics and applications of smith chart.
8. Apply S parameters on a sample two port network and give input and output
relations.
9. Explain 2port BW Enhancement.
10. Summarize different LNA topologies with its merits and demerits.
11. Illustrate Q point and load line concepts.
12. Outline the bandwidth estimation methods.
13. Why matching is essential? What is impedance matching?
14. What is phase noise?
15. Define transducer gain of an amplifier.
16. Show the Noise Figure equation and give its significance
17. Tell the importance of open circuit time constant in designing amplifiers.
18. Relate bandwidth, rise time and delay with the aid of equation.
19. What are the applications of smith chart?

20. What do you meant by reconfigurability?

Part B
1. A microwave transistor has the following S parameters at 10 GHz, with 50 impedance.
S11=0.45150 degree, S12=0.01-10 degree, S21=2.0510 degree and S22=0.40-
150degree. The source impedance is Zs=20, ZL=30 Estimate the power gain and available
gain. (16)

2. a. Describe the impact of OC time constants in bandwidth estimation (8)

b. Can one plot a smith chart locus for a lossy transmission line? Justify. If it is possible plot
an example (8)

3. Examine various stability analysis performed to improve system efficiency. (16)

4. Distinguish Single ended and Differential LNAs and compare its performance metrics.
(16)
5. a) Identify the properties of constant gain circles in detail (8)

b) Write a detailed note on matching technique (8)

6. Explain in detail the steps involved in designing a low noise amplifier (16)

7. a) Illustrate the shunt series amplifier and discuss its design (8)

b) Interpret the working of differential LNAs with suitable analysis (8)

8. a) Name and any three properties of S parameters and prove (8)

b) Give the significance of impedance matching in RF ICs with an example? (8)

9. a) Recall the steps to design high frequency amplifier with an example (8)
 b) Drive the circle equations of smith chart (8)

10. a) Why High Frequency Amplifier Design is always challenging. (8).

b) What are the techniques used to analyse phase and gain margin (8)

Part C
1. Suppose a quadrature up conversion mixer in a GSM transmitter operate with a peak
baseband swing of 0.3V. If the transmitter delivers an output power of 1 W, determine
the maximum tolerable input referred noise of mixers such that transmitted noise in
the GSM RX band does not exceed -155dBm.

UNIT III
Part A
1. Discuss the effects of nonlinearity in power amplifier
2. Estimate the efficiency of power amplifiers (all type)
3. Justify the importance of negative feedback system with example
4. Explain Lag and Lead Compensation
5. List the types of feedback systems with example
6. Classify power amplifier along with its performance parameters
7. Contrast gain margin and phase margin
8. Apply root locus techniques for positive feedback systems and give inference.
9. Show the time domain and frequency domain characteristics of first order and second
order systems.
10. Develop the expression for amplifier power gain
11. Summarize the steps in finding root locus.
12. Illustrate Inverse Class F Amplifier.
13. Demonstrate how the stability of an amplifier is ensured by Nyquest test.
14. Outline efficiency boosting techniques and their features.
15. Define ACPR Metric.
16. What are the different types of linearization techniques?
17. Choose the efficient gain boosting technique? And show how?
18. Relate stability with linearity?
19. Why root locus technique is necessary?
20. Give the advantages and disadvantages of class C power amplifier?
21. Write notes on following. Gain boosting technique; injection locking, combining,
cascading.

Part B

1. a) Design a linear amplifier for use in a 1 GHz communication system. The requirements
are to supply 1W into 50 ohms. Assume that a 3.3 V DC power supply is available. Specify
important device parameters compute all component values and estimate drain efficiency (8)

b) Describe any one linearization technique. (8)

2. Compare various power amplifiers with its performances? (16)

3. Examine various stability analyses performed to improve system efficiency. (16)

4. For a 200 MHz oscillation frequency, a colpitts BJT oscillator in common-emitter
configuration has to be designed. For the bias point of V ce=3v and Ic=3mA, the following
circuit parameters are given at room temperature of 25 degree Celsius:
CBC =0.1fF, rBE=2kohms, rCE=10kohms CBE =100fF. If inductance should not exceed L 3=50nH,
Calculate values for the capacitances in the feedback loop. (16)

5. a) Summarize the rules of root locus techniques (8)

b) Describe the role played by gain and phase margin as stability measures (8)

6. a) Explain the stability feedback systems in detail (8)

b) Illistrate class A power amplifier and explain. Derive its efficiency (8)

7. What is the importance of ACPR metrics explain it with suitable examples. (16)

8. Recall the techniques used to analyze phase and gain margin. (16)

9. a) Describe the principles of class E and F amplifiers with neat diagrams (8)

b) Write a note on linearization technique (8)

10. List the different Efficiency Boosting Techniques and give comment on its efficiency.
(16)

Part C
1. An a/g TX employs a two stage PA having a gain of 15 dB. Can a quadrature up
converter directly drive this PA? Justify.

UNIT IV

Part A
1. Discuss about kurodas identity and state their applications?
2. Design the building blocks of a second order and third order PLL?
3. Justify your answer for the following context. Does conversion gain of mixer in excess
of unity, necessarily follow that sensitivity improves?
4. Explain basic filter configuration and performance metrics.

5. Classify different types of Special Filters?

6. List down the basic characteristics of mixer?

7. Contrast oscillator and Mixer?

8. Develop the Leesons model.
9. Build the basic PLL architecture?
10. Construct a basic dielectric resonator with its equivalent circuit.

11. Summarize various approximation techniques to perform filter design?

12. Compare the types of mixer based on conversion efficiency.

13. Outline few CAD tools for RF circuit design.

14. Contrast linear and non linear mixer?
15. Why are ideal filter characteristics not realized in practice?

16. What do you meant by linearized PLL circuit?

17. Define shape factor, insertion loss.
18. Show Unit elements and Kurodas Identities.
19. Give different types of filter w.r.t cut-off frequency?
20. Tell about rejection factor, ripple factor and B.W factor?

Part B
1. a. What is the problem with purely linear oscillator? Explain
(4)

b. Describe RF directional couplers (6)

c. Tell the important requirements of mixers (6)

2. a. Illustrate second order PLL with its characteristics (10)

b. Describe the realization of any one special filter (6)

3. a Draw a basic microwave oscillator model and explain it in detail (8)

b. Design a one port oscillator using a tunnel diode with IN =1.25/40 at 8 GHz in a 50ohm
system (8)

4. a. List out various types of mixers in detail (8)

b. State and prove II and III kuroda identity. Explain the steps. (8)

5. Analyze an image reject mixer using small signal approximation (16)

6. Construct a band pass filter having a 0.5dB equi ripple response with N=3. The center
frequency is 1 GHz, the bandwidth is 10% and the impedance is 50 (16)

7. Discuss in detail about MMIC-VCO and mixers (16)

8. Examine the procedure for the design of microwave oscillator. (16)

9. Design a micro strip low pass filter with cut off frequency 2 GHz, 30 dB attenuation at
frequency 3.5 GHz for chebyshev attenuation response with 0.2dB ripple. Use alumina
substrate of thickness 0.63 mm (16)

10. Explain the following microwave components directional couplers, hybrid couplers and
detectors. (16)

Part C

1. The input to a multiplying PLL is a sinusoidal with two small close-in FM

sidebands, i.e., the modulation frequency is relatively low. Determine the output
spectrum of the PLL
2. Determine the required synthesizer phase noise for an 11a receiver such that
reciprocal mixing is negligible.

3. Design a 2port oscillator at 10GHz using a GaAS FET in the common source
configuration with the following S parameters.

s= 0.79140 0.10 50
2.75 130 0.7540

UNIT V

Part A

1. Justify your answer for the context lumped components are not realizable at
microwave frequencies?
2. Explain the concept of PBG Antenna.
3. Classify microwave integrated circuits.

4. List out 4 substrates along with their dielectric values

5. Categorize the passive MIC components.

6. Identify different techniques used for bonding active devices in HMICs

7. Develop the gain formulas to calculate the gain of amplifier circuit.

8. Contrast microwave integrated circuits over conventional circuits.

9. Explain the underlying principle behind photonic band gap antennas?

 10. Outline the advantages of MIC over traditional circuits using printed circuit
technology.
11. Demonstrate the conditions for oscillations.

12. Why is micromachining essential for passive components?

13. What are micro strip component of MIC.

14. Define- cryogenic effect?

15. Give the dielectric material features used in MIC.

16. Which is the best measurement technique for micro fabricated materials?

17. Recall the steps involved in probe station measurement?

18. What is the need for probe station?

19. What are the advantages of MMIC technology?

20. Define conversion loss.

21. Write down the applications of inductors.

22. What are stability circles?

Part B

1. Discuss in detail about MICs (16)

2. Explain the following

(i) Micro strip components

(ii) co-planar circuits
(iii) Integrated antennas (16)

2. Write short notes on i. Integrated antennas ii. Test fixture measurements? (16)

3. a) An inter digitized capacitor fabricated on a GaAs substrate has following parameters.

N=8 relative dielectric constant=13.10, substrate height=0 .254cm, finger length=0.00254cm,
Compute the capacitance (8)

b) Identify the choice of substrates for MIC fabrications (8)

4. a) Explain the design aspects of integrated and PBG antennas with examples (8)

b) Write short notes on probe station measurements (8)

5. Describe in detail the various MIC materials used. (16)

6. a) What is multichip module technology (8)

b) Demonstrate active device technologies applicable to MICs. (8)

7. How can you carry out a thermal and cryogenic measurement? (8)

b. How can a passive component be tested using a RF probe station? (8)

8. What is micro machining? Why is micro machining essential for antennas? How do you
select integrated antennas? (16)