Академический Документы
Профессиональный Документы
Культура Документы
Page 1
GIO TRNH LINH KIN IN T
E
I
R
[E]: Volt (V)
[I]: Ampere (A)
[R]: Ohm ()
2.1.2. Cc thng s ca in tr
a. Gi tr in tr
Gi tr in tr c trng cho kh nng cn tr dng in ca in tr.
Yu cu c bn i vi gi tr in tr l t thay i theo nhit , m v
thi gian,in tr dn in cng tt th gi tr ca n cng nh v ngc li.
Gi tr in tr c tnh theo n v Ohm (), k, M, hoc G.
Gi tr in tr ph thuc vo vt liu cn in, kch thc ca in tr v
nhit ca mi trng.
l
R .
S
Trong : : in tr sut [m]
l: chiu di dy dn [m]
S: tit din dy dn [m2]
Trong thc t in tr c sn xut vi mt s thang gi tr xc nh. Khi
tnh ton l thuyt thit k mch, cn chn thang in tr gn nht vi gi tr
c tnh.
b. Sai s
Sai s l chnh lch tng i gia gi tr thc t ca in tr v gi tr
danh nh, c tnh theo %
Rtt Rdd
100%
Rdd
Page 2
GIO TRNH LINH KIN IN T
R
H s gc=
T
0oK
Page 3
GIO TRNH LINH KIN IN T
Dy dn Dy dn
Cc in cc
Hnh 2.2. in tr than p
Page 4
GIO TRNH LINH KIN IN T
Nichrome
Dy dn
Dy dn
Li cch in
Hnh 2.3. in tr dy qun
in tr mng mng: c sn xut bng cch lng ng Cacbon, kim
loi hoc oxide kim loi di dng mng mng trn li hnh tr. in tr mng
mng c gi tr t thp n trung bnh, v c th thy r mt u im ni bt ca
in tr mng mng l tnh cht thun tr nn c s dng trong phm vi
tn s cao, tuy nhin c cng sut nhit thp v gi thnh cao.
Mng mng
Dy dn Dy dn
Hnh 2.4. in tr mng mng
Page 5
GIO TRNH LINH KIN IN T
b. in tr c gi tr thay i
Bin tr (Variable Resistor) c cu to gm mt in tr mng than
hoc dy qun c dng hnh cung, c trc xoay gia ni vi con trt. Con
trt tip xc ng vi vi vnh in tr to nn cc th 3, nn khi con trt
dch chuyn in tr gia cc th 3 v 1 trong 2 cc cn li c th thay i. C
th c loi bin tr tuyn tnh (gi tr in tr thay i tuyn tnh theo gc xoay)
hoc bin tr phi tuyn (gi tr in tr thay i theo hm logarit theo gc xoay).
Bin tr c s dng iu khin in p (potentiometer: chit p) hoc iu
khin cng dng in (Rheostat)
Trc iu
khin 2
Con
trt Vnh in tr 1 VR 3
potentiometer
1 VR 3
Rheostat
in tr nhit (Thermal Resistor -Thermistor):
Page 6
GIO TRNH LINH KIN IN T
Quang tr l linh kin nhy cm vi bc x in t quanh ph nh sng
nhn thy. Quang tr c gi tr in tr thay i ph thuc vo cng nh
sng chiu vo n. Cng nh sng cng mnh th gi tr in tr cng gim
v ngc li.
Khi b che ti: R n.100k n.M
Khi c chiu sng: R n.100 n.k
Quang tr thng c s dng trong cc mch t ng iu khin bng
nh sng:(Pht hin ngi vo ca t ng; iu chnh sng, nt
Camera; T ng bt n khi tri ti; iu chnh nt ca LCD;)
2.1.4. Cch ghi v c cc tham s in tr
a. Biu din trc tip
Ch ci u tin v cc ch s biu din gi tr ca in tr: R(E) ;
K - K ; M - M ;
Ch ci th hai biu din dung sai:
F=1% J=5%
G=2% K=10%
H=2,5% M=20%
Page 7
GIO TRNH LINH KIN IN T
Page 8
GIO TRNH LINH KIN IN T
Tm 7
Vch 3
Xm 8
Vch 1 Vch 5
Trng 9
Vng kim -1 5%
Bc kim -2 10%
Vch 2 Vch 4
2.1.5. ng dng
in tr c s dng trong cc mch phn p phn cc cho
Transistor m bo cho mch khuch i hoc dao ng hot ng vi hiu sut
cao nht.
in tr ng vai tr l phn t hn dng trnh cho cc linh kin b ph
hng do cng dng qu ln. Mt v d in hnh l trong mch khuch i,
nu khng c in tr th Transistor chu dng mt chiu c cng tng i
ln.
c s dng ch to cc dng c sinh hot (bn l, bp in hay
bng n,) hoc cc thit b trong cng nghip (thit b sy, si,) do in
tr c c im tiu hao nng lng di dng nhit.
Xc nh hng s thi gian: Trong mt s mch to xung, in tr c
s dng xc nh hng s thi gian.
Phi hp tr khng: tn hao trn ng truyn l nh nht cn thc
hin phi hp tr khng gia ngun tn hiu v u vo ca b khuch i, gia
u ra ca b khuch i v ti, hay gia u ra ca tng khuch i trc v
u vo ca tng khuch i sau.
2.2. T in
2.2.1. nh ngha
T in gm 2 bn cc lm bng cht dn in c t song song vi
nhau, gia l lp cch in gi l cht in mi (giy tm du, mica, hay gm,
Page 9
Lp in mi
Bn cc
(khng kh)
kim loi
GIO TRNH LINH KIN IN T
K hiu
Khng kh =1,0006
Gm =30-7500
Mica =5,5
Du =4
Giy kh =2,2
Polystyrene =2,6
Page 10
GIO TRNH LINH KIN IN T
Gm
Page 11
GIO TRNH LINH KIN IN T
e. in p nh thng
Khi t vo 2 bn cc ca t in p mt chiu, sinh ra mt in trng
gia 2 bn cc. in p cng ln th cng in trng cng ln, do cc
electron c kh nng bt ra khi nguyn t tr thnh cc electron t do, gy nn
dng r. Nu in p qu ln, cng dng r tng, lm mt tnh cht cch
in ca cht in mi, ngi ta gi l hin tng t b nh thng. in p
mt chiu t vo t khi gi l in p nh thng.
Khi s dng t cn chn t c in p nh thng ln hn in p t vo
t vi ln. in p nh thng ph thuc vo tnh cht v b dy ca lp in
mi. Cc t c in p nh thng ln thng l cc t c kch thc ln v cht
in mi tt (Mica hoc Gm).
f. Dng in r
Thc t trong cht in mi vn tn ti dng in c cng rt nh,
c gi l dng r, khi c th coi t in tng ng vi mt in tr c
gi tr rt ln, c M.
Dng r
du
i C
dt
C
L kim
loi
Lp in mi L kim loi
Lp in mi
(gia cc bn cc)
Bn cc kim loi
Page 13
GIO TRNH LINH KIN IN T
K hiu: C
+ _
Page 14
GIO TRNH LINH KIN IN T
Cc l ng
Trc iu khin
Cc l tnh
Page 15
GIO TRNH LINH KIN IN T
ng c nh
ng trt (bn ngoi)
(bn trong)
Lp in mi
in cc
2.2.4. Cch ghi v c tham
Hnhs2.ca t in
T ng trc chnh
a. Ghi trc tip: i vi cc t c kch thc ln (T ha, T tantal) c th
ghi trc tip cc thng s trn thn ca t
Gi tr in dung
in p nh thng
Page 16
GIO TRNH LINH KIN IN T
2.2.5. ng dng
Dung khng ca t:
Page 17
GIO TRNH LINH KIN IN T
1
Xc
2fC
Li khng kh Li st l Li st bi
2.3.2. c tnh ca cun dy
a. To t trng bng dng in
Page 18
GIO TRNH LINH KIN IN T
n
Cng t trng: H I [A/m]
l
n: S vng dy
l: Chiu di ca li [m]
I: cng dng in [A]
Cng t cm: B o H [T] (Tesla)
o: t thm ca chn khng o=4.10-7 (H/m)
: t thm tng i ca vt liu t so vi chn
khng
Nu cng dng in I khng i th H v B l t trng u
Nu cng dng in i thay i th H v B l t trng bin thin
b. To dng in bng t trng
Hin tng cm ng in t
nh lut Faraday: Nu t thng qua mt cun dy bin thin s sinh
ra trong cun dy mt sc in ng cm ng c ln t l vi tc bin
thin ca t thng.
nh lut Lentz: Sc in ng cm ng sinh ra dng in cm ng c
chiu chng li s bin thin ca t thng sinh ra n.
Sc in ng cm ng: ecu n.
t
Page 19
GIO TRNH LINH KIN IN T
n : s vng dy
: lng t thng bin thin qua cun dy
Page 20
GIO TRNH LINH KIN IN T
RL<<XL nn ZL X L
f=0 Z L 0
f ZL
Cun dy cho tn hiu mt chiu qua v chn thnh phn xoay chiu
(Cun chn cao tn)
c.H s phm cht ca cun dy
Do c in tr thun bn trong cun dy nn c s tn hao nng lng
di dng nhit
X L 2fL
Q
R R
Q>> R , tn hao trn cun dy cng nh, dy cun l kim loi dn in
tt.
d. Tn s lm vic gii hn ca cun dy
Do cc vng dy c cch ly vi nhau bi lp cch in nn tn ti t
in k sinh trong cun dy, trong min tn s thp c th b qua nh hng ca
in dung k sinh nhng trong min tn s cao cun dy tng ng vi mt
mch cng hng song song.
Tn s cng hng: C
1
fo
2 LC L
Page 21
GIO TRNH LINH KIN IN T
Li st l Li st bi Li khng kh
Page 22
GIO TRNH LINH KIN IN T
Nguyn l:
Khi cho ngun in xoay chiu qua cun s cp, dng in bin thin sinh
ra t trng bin i v c cm ng sang cun th cp sinh ra sc in ng
cm ng e2, mt khc trn cun s cp cng xut hin sc in ng cm ng e1
Cun s cp: e1 n1.
t
Cun th cp: e2 n2 .
t
Trong : n1, n2 ln lt l s vng dy ca cun s cp v cun th cp.
2.4.2. Cc t l ca bin p
u1 e1 n1
T l v in p:
u 2 e2 n 2
i1 n 2
T l v dng in:
i2 n1
T l v cng sut
Cng sut tiu th cun s cp:
P1 u1.i1
Cng sut tiu th cun th cp:
P2 u 2 .i2
Page 23
GIO TRNH LINH KIN IN T
Mt bin p l tng coi nh khng c s tiu hao nng lng trn hai
cun dy s cp, th cp v mch t nn khi : P1=P2
Tuy nhin mt my bin p thc t lun c cng cun th cp nh hn
cng sut ca cun s cp do cun s cp v th cp c in tr thun tiu hao
nng lng di dng nhit ngoi ra dng in Foucault xut hin trong li t
cng tiu hao mt phn nng lng.
Hiu sut ca my bin p:
P2
.100%
P1
Page 24
GIO TRNH LINH KIN IN T
Vng dn
Ec
Vng dn
Vng cm Ec
Eg Vng cm Vng dn
Ev Ev Eg
Vng ha tr Vng ha tr Vng ha tr
Page 25
GIO TRNH LINH KIN IN T
Page 26
GIO TRNH LINH KIN IN T
Page 27
GIO TRNH LINH KIN IN T
Kt lun:
trng thi cn bng, tch s nng 2 loi ht dn lun l hng s
Eg
nn pn n p p p ni pi ni 2 N c N v e kT
1.2. Diode bn dn
Khi cho 2 n tinh th bn dn tp cht loi p v n tip xc cng ngh vi
nhau hnh thnh nn chuyn tip p-n (junction p-n).
1.2.1. S hnh thnh min in tch khng gian:
Page 28
GIO TRNH LINH KIN IN T
Ikt Etx
p n p n
Jp_n
Hnh 5. Cu trc ca chuyn tip p-n
kT p p kT nn
U tx ln ln (2)
q pn q n p
Page 29
GIO TRNH LINH KIN IN T
Eng
Hnh 6. Phn cc thun cho Jp-n
b. Phn cc ngc
in trng ngoi Eng cng chiu vi Etx (cc dngn, cc mp).
Khi cng in trng tng Et Etx Eng hay Et Etx Eng Etx
rng min ngho tng, cn tr chuyn ng khuch tn, dng khuch tn Ikt gim
ti 0, dng tri Itr tng cht t v nhanh chng t c gi tr bo ha c gi
l dng ngc bo ha. Trng hp ny c gi l phn cc ngc cho chuyn
tip p-n. Etx
p n Page 30
_ +
E
GIO TRNH LINH KIN IN T
Jp-n
Hnh 8. Cu to v k hiu ca Diode
Page 31
GIO TRNH LINH KIN IN T
kT -23
UT: Th nhit (Thermal Voltage); UT= 26mV ; k=1,38.10 J/K:
q
hng s Boltzman; q=1,6.10-19 (C) in tch ca ht mang in; K: nhit c
o bng n v Kenvil.
m: h s hiu chnh gia l thuyt v thc t.
ID(mA) ID(mA)
UAK
UAK(V) UAK(V)
a) b)
Page 32
GIO TRNH LINH KIN IN T
IS (mA)
UAK(V)
Page 33
GIO TRNH LINH KIN IN T
1.2.4. ng dng
a. Chnh lu: Bin i in p xoay chiu thnh in p mt chiu (nn
in)
Chnh lu na chu k (half-wave Rectifier) :
D
-12/12V
vs R =1k
1kHz
Page 34
GIO TRNH LINH KIN IN T
Page 35
GIO TRNH LINH KIN IN T
D1
vi
v1 D2 RL
V1
-12/12V DB
vs
50 Hz
R = 1k
Hnh 12.Chnh lu cu
Page 36
GIO TRNH LINH KIN IN T
D D
-12/12V -12/12V
R =10k
R =10k
vs vs
+ 1kHz
1kHz E =5V E =5V
+
R R
-10/10V 22k D -12/12V 47k
D
vs +
E
vs +
E
2kHz 5V 2kHz 5V
Page 37
GIO TRNH LINH KIN IN T
Page 38
GIO TRNH LINH KIN IN T
-10/10V
D
vs
+
1kHz E = 2V
Page 40
GIO TRNH LINH KIN IN T
Page 41
GIO TRNH LINH KIN IN T
1.3. Transisor
Transistor l mt linh kin in t gm 3 in cc c kh nng khuch i dng,
in p hay cng sut. Nguyn l c bn ca Transistor l in p gia 2 cc
ca n iu khin cng dng in ca cc th 3. C 2 loi Transistor:
Transistor lng cc ( Bipolar Juction Transistor BJT) v Transistor trng
(Field-Effect Transistor FET). Mi Transistor c mt u im v c tuyn ring
v do cng c ng dng trong nhng phm vi ring.
Transistor
BJT FET
Page 42
GIO TRNH LINH KIN IN T
Page 43
GIO TRNH LINH KIN IN T
i
Phn cc thun Phn cc thun Min bo ha Kha
Tch cc
Phn cc ngc Phn cc thun
ngc
Transistor hot ng trong ch khuch i (hay trong min tch
cc), JE c phn cc thun v JC phn cc ngc.
Nu JE v JC u c phn cc thun hoc u c phn cc ngc th
Transistor hot ng nh mt kha in t vi hai trng thi: Trng thi ngt v
trng thi thng bo ha, c ng dng trong cc mch xung v mch s.
b. Nguyn l hot ng ( npn)
Khi JE c phn cc thun (UBE>0), dng in qua JE ch yu l dng
khuch tn ca cc ht dn a s, in t t min Emitter c phun vo min
Base ng thi l trng t min Base khuch tn sang min Emitter, tuy nhin
do nng pha tp ca min Base rt thp nn cng dng l trng nh hn
rt nhiu so vi cng dng in t, nn c th coi dng I E l dng ca cc
in t, ph thuc ch yu vo in p UBE.
Khi cc in t c phun t min Emitter sang min Base, tip tc
khuch tn su vo trong min Base v xy ra hin tng ti hp ht dn, dng
IB gm 2 thnh phn: dng l trng (ht dn a s) khuch tn sang min Emitter
(IB1) v dng l trng ti hp vi electron (IB2).
Do rng ca min Base rt mng nn ch c mt s rt t cc in t ti
hp vi l trng trong min Base cn a s in t ti c chuyn tip JC, JC
phn cc ngc nn electron c cun sang min Collector. Dng in I C trong
min Collector gm 2 thnh phn: ICBo: dng ngc bo ha (dng tri ca ht
dn thiu s) v dng cun ca cc ht thiu s tri t min Base sang min
Collector. Dng ngc bo ha ICBo c gi tr rt nh nn dng cun ca cc ht
dn thiu s tri l thnh phn ch yu ca dng IC, hay I C I E nn ch ph
thuc vo in p UBE m c lp vi in p UCB, tc l dng IC c iu
khin bi in p UBE, l nguyn l hot ng c bn ca Transistor.
Page 44
GIO TRNH LINH KIN IN T
I C I E I CB0 (5)
I E IC I B (6)
Vy: I C I B I C I CB0 hay IC
1
IB I CBo
1 1
t ta c:
1
I C .I B 1 .I CBo .I B I CEo (7)
Trong : l h s truyn t dng in 1 , cng gn 1 Transistor
cng tt.
: l h s khuch i dng tnh (50-300)
Vy: = /(1+ )
1.3.2. Cc cch mc ca BJT
Nu coi Transistor nh mng 4 cc, khi phi c mt cc chung cho c
u vo v u ra. C th c 3 cch mc (kt cu): CE (Common Emitter);
CB(Common Base) v CC (Common Collector).
IC
IB
IE IC
IC
IB IE
IE IB
a) b)
c
Hnh 17. Cc kt cu ca BJT a. CE b. CB c.CC
a. Kt cu CE:
c tuyn vo: I B f U BE U CE const
Do JE phn cc thun m I B I E nn c tuyn vo trong trng hp
ny ging c tuyn ca chuyn tip p-n phn cc thun. Nu UCE tng, m
Page 45
GIO TRNH LINH KIN IN T
IB(A) IC(mA)
UCE=0.5 IB=150A
150 V 15 125A
UCE=0V 100A
100 UCE=1V 10
50 5
IB=0
0
UBE(V) UCE(V)
IC(mA)
UCE(V)
Hnh 18. c tuyn vo v c tuyn ra ca kt cu CE
c tuyn ra: I C f U CE I B const
Min khuch i (gn gc), dc ca c tuyn kh ln. Khi UCE tng,
in p UCB cng tng, phn cc ngc ca chuyn tip Jc tng nn IC tng
tuyn tnh theo in p UCE. Khi UCE t gi tr ln ( 2V ) dng Ic t gi tr
bo ha, I C .I B tc l khng ph thuc vo UCE nhng UCE qu ln th IC
tng t ngt do xy ra hin tng nh thng do hiu ng thc l hay hiu ng
xuyn hm. Nu UCE<UBE(on) th dng IC gim nhanh v gi tr 0.
Page 46
GIO TRNH LINH KIN IN T
b. Kt cu CB:
c tuyn vo: I E f U BE U CB const
Do JE phn cc thun nn c tuyn vo c dng ging vi c tuyn ca
diode khi phn cc thun. Khi UBE=const, UCB tng, phn cc ngc tng, vng
ngho Jc rng ra, khong cch hiu dng gia 2 min J E v Jc gim nn dng IE
tng.
c tuyn ra: I C f U CB I E const
Do I E const , I C I E nn khi thay i UCB th dng I C thay i
khng ng k. Mt im khc bit l khi UCB gim ti 0 nhng dng Ic cha
gim ti 0. l do khi UCB=0, bn thn chuyn tip Jc vn cn in th tip
xc, chnh in th tip xc ny cun cc ht dn t Base sang min Collector
nn dng I C vn c gi tr khc 0. dng I C 0 , chuyn tip Jc phi c
phn cc thun, khi Transistor chuyn sang hot ng trong ch bo ha.
iu ng ch l khi IE=0 nhng vn c thnh phn dng r ICE0 nn I C 0 .
c. Kt cu CC:
c tuyn vo: I B f U CB U CE const
Do khi Transistor hot ng trong ch khuch i, in p UBE lun
gi khng i (UBE=0,7V i vi Si v 0,3V i vi Ge). Nn UCB=UCE-
UBE=const, UCB khng ph thuc vo IB.
c tuyn ra: I E f U CE I B const Do I C I E nn c tuyn ra trong
trng hp ny c dng ging vi c tuyn ra trong trng hp CE.
IB(A) IE(mA)
UCE1 IB=150A
UCE2>UCE1 125A
100A
IB=0
Page 47
UCB(V)
0
UCE(V)
Hnh 19. c tuyn vo v c tuyn ra ca kt cu CC
GIO TRNH LINH KIN IN T
IB1
Q IBQ
UCE(V)
VCC
Hnh 20. ng ti tnh v im lm vic tnh
n nh im cng tc tnh khi nhit thay i
Transistor l mt linh kin rt nhy cm vi nhit . Hai thng s ca
Transistor nhy cm vi nhit nht l in p U BE v cng dng
ngc bo ha ICBo. Nu dng ICBo tng, lm cho dng IC tng, s lng ht dn
qua chuyn tip Jc tng lm cho s va chm gia cc ht dn vi mng tinh th
tng, khi lm cho nhit tng v tip tc lm I CBo tng, c th nhit ca
Page 48
GIO TRNH LINH KIN IN T
I C .I B 1 I CBo
I C 1
Nn: S (8)
I CBo I
1 B
I C
Page 49
GIO TRNH LINH KIN IN T
b RC
C iC
RB a B +
uCE UCC
iB +u -
BE
- E
UBB
iE
b'
Page 50
GIO TRNH LINH KIN IN T
+ UCC - + UCC -
R2 R3
R1 R1
b b
C iC C iC
a B + a B +
uCE + uCE
iB + iB
uBE - uBE -
E - E
-
R2
b' b'
(a) (b)
Page 51
GIO TRNH LINH KIN IN T
R3 R3
R1 R1
C C ICB0
B + B +
uCE + uCE
+ ID0
uBE - uBE -
- E - E
RT
t0
R2 R2 D
(a) (b)
Page 52
GIO TRNH LINH KIN IN T
R2 R3
R1
R1 b
b
C iB+iC C iC
a B + a B +
uCE + uCE
iB + iB
uBE - uBE -
E - E
- iE
iE R2 R4
b' b'
(a) (b)
Page 53
GIO TRNH LINH KIN IN T
b RC
C iC
RB a B +
uCE UCC
iB + uBE -
- E
UBB
iE
RE
b'
U BB iB RB uBE iE R ; iE (1 F )iB
U BB uBE
iB
RB (1 F ) RE
To im Q u vo c in p BE nh- 3.14: U BEQ 0,6V ,v:
U BB 0,6V
I BQ (3.28)
RB (1 F ) RE
To im Q u ra c dng clct nh- 3.18: ICQ F I BQ , v:
UCEQ UCC ( I BQ ICQ ) RE ICQ RC (3.29)
Ph-ng php phn cc c hi tip trn mit nn cn -c gi l phn cc
hi tip (phn hi) mit.
1.4.4 Cc ch lm vic ca BJT
I. c tnh ti
Xt cc c tuyn tnh trong iu kin gi mt tham s no c nh:
c tuyn vo khi mc E chung l quan h gia dng iB v uBE ng vi cc hng
s uCE, c tuyn ra l quan h gia dng iC v uCE ng vi cc hng s iB. Khi
BJT lm vic vi ch c ti, quan h dng v p theo quy lut -ng ti, cc
dng in v in p trn cc cc u thay i nn gi l ch ng.
Phn tch c tnh ti ca ra ca BJT trong mch in hnh 3-11a.
* Ti mt chiu
Khi lm vic vi ngun mt chiu, t in coi nh- h mch, BJT ch c
mt ti duy nht l RC, -ng ti theo biu thc 3.17 tnh ring cho thnh phn
mt chiu vi iC= IC v uCE= UCE s l:
U CC U CE
IC (3.30)
RC
Trong IC l dng mt chiu qua RC v UCE l in p mt chiu trn CE.
dc ca -ng ti mt chiu ph thuc vo RC:
Page 54
GIO TRNH LINH KIN IN T
1
acrtg ( ) (3.31)
RC
iC Parabn bo ho
+ UCC -
IC ICmax Ti xoay
RC
R1 chiu
U CC IBmax
III
iC RC
C
+ ICbh N
+ uCE
iB uBE - Rt
- PCmax
ICQ Q
R2 iE II
Ti mt
chiu
(b) M iB=0
(a) I
UCbh UCEQ UCC UCE0 uCE
Page 55
GIO TRNH LINH KIN IN T
Page 56
GIO TRNH LINH KIN IN T
N+ N+
Vng knh
L
Phin P
(a)
K hiu: B
D
G
B
S
(b)
Page 57
GIO TRNH LINH KIN IN T
N+ N+
Lp o in t
Phin P
B
Hnh 4-2 MOSFET khi c in p cc ca uGS
Gi thit uDS>0 v uGS >0. Do c uGS, hnh thnh in tr-ng trong lp xt.
D-i tc ng ca in tr-ng ny m cc l trng b y li su vo phin ,
li cc ion m Axpto khng dn in, MOSFET vn ch ct dng. Khi
tng uGS n gi tr ng-ng UTR, tr-ng lp xt bt u ht cc in t v pha
cc ca hnh thnh lp o in t ni gia cc S v cc D gi l knh dn. Knh
dn bc cu qua vng ngho gia D v phin v vy c th cho dng i D chy
qua. dn in ca knh dn tng theo uGS v khi uGS tng, mt cc in t
trong knh dn tng, knh dn giu cc in t. Knh dn gm ton cc in t
nn gi l knh dn loi N. Do tn ti knh dn nn xut hin lp ngho mng
gia knh dn v phin hnh thnh lp ngn cch gia knh dn v phin .
Knh dn -c hnh thnh do cm ng in tr-ng nn loi MOSFET ny cn
-c gi l loi knh cm ng.
Page 58
GIO TRNH LINH KIN IN T
iD
uDS
Hnh 4-2 c tuyn V-A khi uDS nh
-+
uGS uDS
-+
Lp ngho
N+ N+
Knh dn
Phin P
B
Hnh 4-3 MOSFET khi tng uDS
Page 59
GIO TRNH LINH KIN IN T
Khi uDS tng, in p uDS phn b dc theo knh dn: ti cc ngun S bng
0 v ti cc D bng uDS. Chnh lch in p qua lp xt gn D l u GS-uDS nh
hn uGS. in tr-ng trong lp xt gn cc mng s yu nn b dy knh dn s
nh hn (hnh 4-3).
Do tit din knh dn gim dn v pha D nn c tuyn V-A tr nn phi
tuyn (-ng t nt trn th hnh 4-2), ging ch in tch khng gian ca
n in t nn gi l ch Trit (vng trit) :
iD= K[2(uGS- UTR)uDS-u2DS] (4.3)
2.MOSFET khi uDS ln
Tip tc tng uDS ti gi tr gii hn m knh dn c dy bng khng
(tht li) ti cc mng, in p st trn lp xt dn ti UTR.
Gi tr gii hn ca uDS -c tnh t iu kin:
uGS- uDS = UTR => uDS= uGS- UTR (4.4)
Khi uDS tng n gi tr gii hn trn gi l ng-ng tht, dng i D vn tn
ti do lp o in t vn ni ti cc mng -c nh in tr-ng phn cc ng-c
ca lp ngho. Bin dng qua knh dn -c xc nh duy nht qua in p
st trn knh dn. Dng in ny c gi tr khng i khi u DSv-t qu gi tr
ng-ng tht (uGS- UTR). Vng lm vic ny gi l vng dng khng i:
iD= K(uGS- UTR)2 (4.5)
Nh- vy c tuyn V-A biu th quan h gia dng iD v in p uDS ca
MOSFET giu knh dn N nh- trn hnh 4-4.
iD uDS= uGS- UTR
uGS> UTR> 0
c tuyn gm ba vng:
Vng ct dng khi uGS< UTR (ch-a c knh dn):
iD=0
Page 60
GIO TRNH LINH KIN IN T
Vng Trit khi uGS> UTR(c knh dn) v 0 <uDS< (uGS- UTR):
iD= K[2(uGS- UTR)uDS-u2DS]
Vng dng khng i uGS >UTR v uDS (uGS- UTR):
iD= K(uGS- UTR)2
-ng bin gii gia vng trit v vng dng khng i l -ng
Parabn: iD= Ku2DS , uDS= uGS- UTR. Trong vng trit iD ph thuc c vo uGS v
uDS, vng dng khng i dng in ch ph thuc vo (uGS- UTR)
c tuyn V-A gia dng iG v uGS trn hnh 4-5a. Dng in cc ca qua
lp in mi SiO2 lun bng khng vi mi gi tr ca uGS.
c tuyn truyn dn gia iD v uGS trn hnh 4-5b. Dng in iD ch xut
hin khi uGS> UTR.
iG
uGS
(a)
iD
Ch giu
|
(b) UTR uGS
Page 61
GIO TRNH LINH KIN IN T
Ch ngho Ch giu
UTR uGS
c tuyn iG v uGS cng ging nh- MOSFET giu: dng iGlun bng
khng vi mi gi tr uGS.
Page 62
GIO TRNH LINH KIN IN T
T phin pha tp nh loi P, bng cng ngh quang khc v khuch tn,
ln l-t -a vo cc khi bn dn N lm knh dn v 3 khi bn dn N, P, N pha
tp mnh gn vo cc cc S,G,D.
Tip gip PN gia knh dn v cc ca hnh thnh lp ngho. B rng lp
ngho c th thay i -c nh in tr-ng phn cc ng-c gia knh dn v cc
ca, do vy c th thay i -c tit din A ca knh dn.
in tr ca knh dn -c xc nh t in tr xut ca cht bn dn
loi N, chiu di hiu dng knh L, tit din hiu dng A. Dng in i D c th
iu khin -c bng cch thay i in tr knh dn.
S G D
L
N+ P+ N+
A Lp ngho
Knh dn N
Phin P
(a)
K hiu: D
G
S
(b)
Hnh 4-8 Cu to (a) v k hiu (b) ca JFET knh dn N
A Knh dn Lp ngho
N
Phin P
Hnh 4-9 JFET khi uDS cn nh
Page 63
GIO TRNH LINH KIN IN T
N+ P+ N+
Lp ngho
Knh dn N
Phin P
iD
uGS<0
Page 64
GIO TRNH LINH KIN IN T
iG iD
IDSS
Ch ngho
Page 65
GIO TRNH LINH KIN IN T
N+ Knh dn N N+
(a)
Phin GaAs
K hiu: D khng pha tp
G
S
(b)
iD
uGS=0
uGS<0
Page 66
GIO TRNH LINH KIN IN T
Page 67
GIO TRNH LINH KIN IN T
U DD uDS
iD (4.9)
RD
im lm vic Q -c chn trong khong gia on MN ca -ng ti.
Thc t c th to ra hai ngun UGGv UDD t mt ngun theo cc s thng
dng d-i y.
1. Phn cc bng phn p (MOSFETgiu)
im lm vic Q(IGQ,UGSQ,IDQ,UDSQ), vi: IG=0, nn:
IGQ=0 (4.10)
Theo s hnh 4-16, in p GS lun bng in p phn p trn RB:
RB
UGSQ= uGS = .U DD (4.11)
RA RB
FET lm vic vng dng khng i: iD= K(uGS-UTR)2
IDQ= K(UGSQ-UTR)2 (4.12)
Theo s , ph-ng trnh -ng ti: uDS= UDD- iD.RD
UDSQ= UDD- IDQ.RD (4.13)
+ UDD -
RD
RA
iD
Q +
iG uDS
G
+ -
RB uGS
-
iS
Page 68
GIO TRNH LINH KIN IN T
+ UDD -
RD
iD
Q +
iG uDS
+ -
uGS
RG - RS
iS
Page 69
GIO TRNH LINH KIN IN T
+ UDD -
RD
RA
iD
Q +
iG uDS
G
+ -
RB uGS
- RS
iS
Page 70
GIO TRNH LINH KIN IN T
K
K
b. Nguyn l hot ng
Page 71
GIO TRNH LINH KIN IN T
Page 72
GIO TRNH LINH KIN IN T
in p ngun
4.5.3. SCR
a. Cu to:SCR (Silicon Controlled Rectifier - Chnh lu c iu khin) c
cu trc ging diode Shockley nhng c thm cc ca G (Gate) ng vai tr l
cc iu khin.
A A A A
IB1
p++ p p T1
J1 IC2=2.IB2
n n n n IC1
G J G p
p+ p 2 p G
n T2
n++ J3 IB2
n
K K
K G K
b. Nguyn l hot ng
U AK 0 : c tuyn Volt_Ampere ca SCR trong min ny tng t
vi c tuyn ca diode Shockley.
Page 73
GIO TRNH LINH KIN IN T
U AK 0
Nu VG 0 : SCR hot ng nh mt diode Shockley.
Nu VG 0 , xut hin dng cc ca IG cng chiu vi dng
ngc bo ha trong SCR do tip gip J2 b nh thng vi in p UAK nh
hn nhiu so vi trng hp VG 0 ; c th ni in p VG iu khin in p
ngng nh thng UBO. in p VG cng ln th in p UBO cng nh. Sau
khi c kch m, cc ca G mt vai tr iu khin v SCR s dn cho n khi
dng qua SCR nh hn dng duy tr IH.
Vy c th kch m Thyristor theo 2 cch: tng in p UAK hoc cp mt
in p ti cc ca G bi mt xung c nng lng rt nh. iu ny th hin c
tnh khuch i cng sut ca mch chnh lu s dng SCR.
c. ng dng
Do ch dn dng theo mt chiu nn SCR cng c ng dng trong cc
mch chnh lu. im khc bit ca SCR souvi L
Diode chnh lu thng thng
RL
l c th iu khin c gc pha ca tn hiu ra trn ti (iu
uS
khin cng sut trn ti). Ngy nay,us SCR l mt trong nhng linh kin
chnh lu c nhy tt nht.
Xt mch chnh lu c iu khin n gin nht. Diode D c tc dng bo
v SCR trong na chu k m.
Ban u, SCR ngt, in p trn ti u L 0 . Sau , in p dng c
a ti cc ca G ( U GK 0 ), SCR c kch m ti gi tr in p u s U BO
tng ng vi mt gi tr UGK xc nh. Khi SCR tng ng vi mt in
tr thun c gi tr rt nh, nn in p trn ti u L u s . C th mc thm
bin tr VR iu chnh in p UGK, tc l iu chnh in p ngng nh
thng UBO nn c th iu khin c gc pha ti SCR c kch m.
Page 74
GIO TRNH LINH KIN IN T
Ngng nh thng
RL VR
uL
us
SCR D
us C
uC
uC u D uGK
in p uC dch pha so vi in p ngun mt gc trong khong ( 0 ),
2
ng vai tr ging in p ngun a in p dng ti cc ca G, nn c th
kch m SCR ti gc pha bt k trong khong ( 0 ) v c gi l mch
khng ch pha 1800.
4.5.4. Triac
a. Cu to
Triac l mt linh kin bn dn gm 2 SCR c ghp song song nhng
ngc chiu, 2 cc ca c ni vi nhau. i vi Triac, khng cn cc Anode
Page 75
GIO TRNH LINH KIN IN T
b. Nguyn l hot ng
Triac tng ng vi mt cp SCR nn c kh nng dn dng theo c 2
chiu. Tng ng vi mi gi tr ca in p cc ca VG, Triac s c 2 ngng
nh thng khng i xng. Khi , Triac c kch m mt ln
n
us
us
Page 76
GIO TRNH LINH KIN IN T
us
Page 77
GIO TRNH LINH KIN IN T
Page 79
GIO TRNH LINH KIN IN T
I.QUANG IN TR (PHOTORESISTANCE).
L in tr c tr s cng gim khi c chiu sng cng mnh. in tr ti (khi
khng c chiu sng - trong bng ti) thng trn 1M, tr s ny gim rt
nh c th di 100 khi c chiu sng mnh
Page 80
GIO TRNH LINH KIN IN T
Page 81
GIO TRNH LINH KIN IN T
ngun sng b chn, R tng nhanh, in th cng SCR tng lm SCR dn in,
dng in qua ti lm cho mch bo ng hot ng.
Ngi ta cng c th dng mch nh trn, vi ti l mt bng n c
th chy sng v m v tt vo ban ngy. Hoc c th ti l mt relais iu
khin mt mch bo ng c cng sut ln hn.
2. Mch m in t ng v m dng in AC:
Page 82
GIO TRNH LINH KIN IN T
Page 83
GIO TRNH LINH KIN IN T
Page 84
GIO TRNH LINH KIN IN T
Page 85
GIO TRNH LINH KIN IN T
Page 86