zSs.mi-Condu.ckoi \P\oducti, Line.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

BUZ54A

Power MOS transistor

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX UNIT
field-effect power ttansistoi In a
metal envelope. VDS Dialn-source voltage 1000 V.
This device is intended for use in ID Drain current (d.c.) 4,5 A
Switched Mode Power Supplies ptot Total power dissipation 125 W
(SMPS), motor control, welding, RDS(ON) Drain-source on-state resistance 2,6 n
DC/DC and DC/AC converters,
and in general purpose switching
applications.

MECHANICAL DATA
Dimensions in mm
Net man: 12 g

Pinning: 25,4- *8,3*i

1 = Gate
2 - Drain
3 = Source
4,2

38,84 30,1 19,5 D* 1,55

*10,9-~ 1,6 -*-11,o-J

fig, I TO3; drain connected to mounting base.

Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs)
to prevent damage to MOS gate oxide.
2. Accessories supplied on request: refer to Mounting instructions for TO3 envelopes.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
RATINGS
Limiting values In accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 1000- V
VDGR Drain-gate voltage RGS 20 kn - 1000 V
VGS Gate-source voltage - - 20 V
ID Drain current (d.c.) T mb = 25-0 - 4,5 A
ID Drain current (d.c.) Tn.b-100-C 2,8 A
IDM Drain current (pulse peak value) T mb = 25 "C - 18 A
Plot Total power dissipation Tmb = 25 'C - 125 W
Tstg Storage temperature - -55 150 "C
Tj Junction temperature - - 150 C

THERMAL RESISTANCES
From junction to mounting base Rthj-mb = 1,0 K/W
From junction to ambient R thJ-a = 35 K/W

STATIC CHARACTERISTICS
Tmb ~ 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown voltage. VGS-OV; ID "0,25mA 1000 V
VGS(TO) Gate threshold voltage YDS= VGS: ID= imA 2,1 3,0 4,0 V
IDSS Zero gate voltage drain current VDS =1000 V;VGS = o V;TJ = 25 c 20 2SO MA
IDSS Zero gate voltage drain current VDs = 1000 V;VGS = 0 V;Tj = 125 C 0,1 1,0 mA
IGSS Gate source leakage current VGS = 20V;VDS = OV 10 100 nA
RDS(ON) Drain-source on-state resistance VGS - 10 V; ID = 2,6 A 2.3 2,6 ft

DYNAMIC CHARACTERISTICS
Tmb * 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX, UNIT
gfs Forward transconductance VDS = 25V; ID = 2,6 A 1,4 3,5 - S
Qss Input capacitance VGS = 0 V; YDS " 25 V;f = 1 MHz 3900 5000 pF
GOJS Output capacitance - 180 300 PF

Cm Feedback capacitance 60 90 pF
*d on Turn-on delay time 60 90 ns
V D D=30V;I D = 2.4A;
tr Turn-on rise time 90 140 ns
tdoff Turn-off delay time VGS 10 V; RGS so n; - 330 430 ns
Turn-off fall time Rgen = 50 n 110 140 ns
tf
Ld Internal drain Inductance Measured from contact screw on 5,0 nH
header closei to source pin and
centre of die
LS Internal source inductance Measured from source lead 6 mm - 12,5 - nH
from package to source bond pad
REVERSE DIODE RATINGS AND CHARACTERISTICS
Tmb 25 C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX UNIT
JDR Continuous reverse drain current Tufc-WC 4,5 A
IDRM Pulsed reverse drain current T mb - 25 "C - 18 A
VSD Diode forward on-voltage lF = 9A;Vos = OV; 1,5 1,4 V
Tj = 25C
trr Reverse recovery time IF = 4,5 A;Tj = 25C 2000 ns
Qrr Reverse recovery charge -dIF/dt = 100 A/MS; - 30 - iC
Tj = 25C;
VCS = 0 V; VR = 100 V

140
W
s
p
PD
120
ss
t 100
s
80
ss
60 \
40 \
20
\ 50 100 "C 150
0
-r c
Fig. 2 Power dissipation Pj) = f(Tmb), Fig.3 Topical output characteristics ID - f(Vos)
Parameter: Vcs- &0 *" P"lse tes'!

10

ID 1
I
/
S \

1
10" )
j S V 10
10 5 10' 5 102 5 103 V
-VK
VDS
Fig. 4 Safe operating area lo(DC) and Fig.5 1ypical transfer characteristic ID =f(^GS)
(.Conditions: SO impulse test; VD$= 25 V,
Parameter: tp: D = 0,01; Tmb = 25C. t"mb-2SC.