ElectricalpropertiesofMOS

circuit
 ElectricalpropertiesofMOScircuit:

Parameters
ParametersofMOS
of MOS transistors,pass
transistors pass
transistors,
NMOSinverter,
N MOS inverter
PulluptopulldownratioforanNMOS
inverter,
CMOSinverters,
MOStransistorcircuitmodel,
LatchuponCMOScircuits.
Latch up on C MOS circuits
 Parameter of MOS
ParameterofMOS
Transconductance expressestherelationship
expresses the relationship
betweenoutputcurrentIdsandtheinput
voltage Vgs andisdefinedas
voltageVgs and is defined as

Theoutputconductancegdscanbeexpressed
by
NMOS Inverter
NMOSInverter
Withnocurrentdrawnfromtheoutput,
the currents Ids for both transistors
thecurrentsIdsforbothtransistors
mustbe
equal.
Forthedepletionmodetransistor,the
gateisconnectedtothesourcesoitis
i d h i i
always
onandonlythecharacteristiccurveVgs
=0isrelevant.
Inthisconfigurationthedepletion
modedeviceiscalledthepullup(p.u.)
andthe
enhancement mode device the pull
enhancementmodedevicethepull
down(p.d.)transistor.
PulluptopulldownratioforanN
MOSinverter,
CMOS Inverter
CMOSInverter
InRegion1:
Vin=0
PM=ON
NM=OFF
No
Nocurrentisflowing
current is flowing
throughtheinverter
Vout =V
= VDD ==1
1
Vout ispulleduptoVDD
th
throughPMOS
h PMOS
InRegionII:
Increasetheinputvoltage
p g
beyondlogic0
Voltagecrossesthethreshold
voltage (Vt )N ofnMOS
voltage(V of nMOS
transistor
Vin >(Vt )N
NMOSstartsconductingand
NMOS t t d ti d
goestosaturation
SimilarlyVin <(Vt )P
PMOSstartsconductingand
regionofoperationiscalled
Linear/NONSaturated/
R i ti
Resistivemode
d
Vout starttodecrease&a
smallamountofcurrentstart
toflowfromVDD toGND
InRegionIII
I/pvoltageisfurther
increased
PMgoesinsaturation
PM goes in saturation
NMalsoinsaturation
CMOSexhibitsmaximum
CMOS exhibits maximum
gain
Moreenergyisconsumed;
whenCMOSinverter
switchesfromonestateto
other
Maximumamountof
currentflowsbetweenVDD
toGND
GND
InRegionIV
I/pvoltageisfurther
I/p voltage is further
increased
NMremainsinconducting
modebutithasonlya
smallvoltageacrossit
Operateinlinear
Operate in linear
NowPMconductheavily
andhaslargevoltage
acrossit
Comestosaturationmode
Again
Againcurrentflowing
current flowing
betweenVDD andGND
decreases
 InregionV
Wheni/pvoltage
When i/p voltage
approachesVDD
NM
NM ON
PM OFF
AgainnoCurrentflow
g
throughinverteri.e.VDDto
GND
Vout =GND
Vout ispulleddownto
groundthroughNMOS
d th h NMOS
transistori.e.NM
Vout =0
MOS TRANSISTOR CIRCUIT MODEL
MOSTRANSISTORCIRCUITMODEL
 Latch Up for CMOS
LatchUpforCMOS
Latchupmaybeinducedbyglitchesonthesupplyrailsorbyincident
radiation.
di ti
ThemechanisminvolvedmaybeunderstoodbyreferringtoFigure
whichshowsthekeyparasiticcomponentsassociatedwithapwell
structure in which an inverter circuit (for example) has been formed
structureinwhichaninvertercircuit(forexample)hasbeenformed.