ON Semiconductor

NPN
Amplifier Transistors MPS650
COLLECTOR
3
COLLECTOR
3
MPS651 *
PNP
2
BASE
2
BASE MPS750
1
NPN
1
PNP
MPS751 *
Voltage and current are
EMITTER EMITTER
negative for PNP transistors
MAXIMUM RATINGS
*ON Semiconductor Preferred Devices
MPS650 MPS651
Rating Symbol MPS750 MPS751 Unit
CollectorEmitter Voltage VCE 40 60 Vdc
CollectorBase Voltage VCB 60 80 Vdc
EmitterBase Voltage VEB 5.0 Vdc
Collector Current Continuous IC 2.0 Adc
Total Power Dissipation @ TA = 25C PD 625 mW 1
Derate above 25C 5.0 mW/C 2
3

Total Power Dissipation @ TC = 25C PD 1.5 Watt

Derate above 25C 12 mW/C CASE 2910, STYLE 1
TO92 (TO226AL)
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 C/W
Thermal Resistance, Junction to Case RJC 83.3 C/W

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) V(BR)CEO Vdc
(IC = 10 mAdc, IB = 0) MPS650, MPS750 40
MPS651, MPS751 60
CollectorBase Breakdown Voltage V(BR)CBO Vdc
(IC = 100 Adc, IE = 0 ) MPS650, MPS750 60
MPS651, MPS751 80
EmitterBase Breakdown Voltage V(BR)EBO 5.0 Vdc
(IC = 0, IE = 10 Adc)
Collector Cutoff Current ICBO Adc
(VCB = 60 Vdc, IE = 0) MPS650, MPS750 0.1
(VCB = 80 Vdc, IE = 0) MPS651, MPS751 0.1
Emitter Cutoff Current IEBO 0.1 Adc
(VEB = 4.0 V, IC = 0)

1. Pulse Test: Pulse Width 300
s, Duty Cycle = 2.0%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001 1 Publication Order Number:

March, 2001 Rev. 1 MPS650/D

This datasheet has been downloaded from http://www.digchip.com at this page

 NPN MPS650 MPS651 PNP MPS750 MPS751

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain hFE
(IC = 50 mA, VCE = 2.0 V) 75
(IC = 500 mA, VCE = 2.0 V) 75
(IC = 1.0 A, VCE = 2.0 V) 75
(IC = 2.0 A, VCE = 2.0 V) 40
CollectorEmitter Saturation Voltage VCE(sat) Vdc
(IC = 2.0 A, IB = 200 mA) 0.5
(IC = 1.0 A, IB = 100 mA) 0.3
BaseEmitter On Voltage (IC = 1.0 A, VCE = 2.0 V) VBE(on) 1.0 Vdc
BaseEmitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) VBE(sat) 1.2 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(2) fT 75 MHz
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

1. Pulse Test: Pulse Width 300
s, Duty Cycle = 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1.

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 NPN MPS650 MPS651 PNP MPS750 MPS751

NPN PNP
300 250
TJ = 125C
270 VCE = 2.0 V 225 VCE = -2.0 V
240 TJ = 125C 200
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

210 175
25C
180 150
25C
150 125
120 100
-
55C -
55C
90 75
60 50
30 25
0 0
10 20 50 100 200 500 1.0 A 2.0 A 4.0 A -10 -
20 -
50 -100 -
200 -
500 -1.0 A -2.0 A -4.0 A
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 1. MPS650, MPS651 Figure 2. MPS750, MPS751

Typical DC Current Gain Typical DC Current Gain

NPN PNP
2.0 -2.0
1.8 -1.8
1.6 -1.6
1.4
V, VOLTAGE (VOLTS)

-1.4
V, VOLTAGE (VOLTS)

1.2 -1.2
1.0 VBE(sat) @ IC/IB = 10 -1.0 VBE(sat) @ IC/IB = 10
0.8 -0.8
VBE(on) @ VCE = 2.0 V VBE(on) @ VCE = 2.0 V
0.6 -0.6
0.4 -0.4
0.2 VCE(sat) @ IC/IB = 10 -0.2 VCE(sat) @ IC/IB = 10
0 0
50 100 200 500 1.0 A 2.0 A 4.0 A -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. MPS650, MPS651 Figure 4. MPS750, MPS751

On Voltages On Voltages

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 NPN MPS650 MPS651 PNP MPS750 MPS751

NPN PNP
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 -1.0

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.9 -0.9
0.8 TJ = 25C -0.8 TJ = 25C
0.7 -0.7
0.6 -0.6
0.5 -0.5
0.4 -0.4
IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A IC = -500 mA IC = -2.0 A
0.3 -0.3
0.2 -0.2
IC = -10 mA IC = -100 mA
0.1 -0.1
0 0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

Figure 5. MPS650, MPS651 Figure 6. MPS750, MPS751

Collector Saturation Region Collector Saturation Region

NPN PNP
10 -10

4.0 -4.0
2.0 100 s -2.0 100 s
IC, COLLECTOR CURRENT

1.0 ms 1.0 ms
1.0 -1.0
MPS65
MPS75
0.5 0 -0.5
MPS65 0
MPS75
0.2 1 -0.2 1
TA = 25C TC = 25C TA = 25C TC = 25C
0.1 -0.1
0.05 -0.05
WIRE LIMIT WIRE LIMIT
0.02 THERMAL LIMIT -0.02 THERMAL LIMIT
SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT
0.01 -0.01
1.0 2.0 5.0 10 20 50 100 -1.0 -2.0 -5.0 -10 -20 -50 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. MPS650, MPS651 SOA, Figure 8. MPS750, MPS751 SOA,

Safe Operating Area Safe Operating Area

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 NPN MPS650 MPS651 PNP MPS750 MPS751

PACKAGE DIMENSIONS

TO92 (TO226)
CASE 2910
ISSUE AL
A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
SEATING
PLANE DIMENSIONS D AND J APPLY BETWEEN L AND K
P MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
L IN P AND BEYOND DIMENSION K MINIMUM.
F
K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
X X D D 0.018 0.021 0.457 0.533
G F 0.016 0.019 0.407 0.482
H G 0.045 0.055 1.15 1.39
J H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
R K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
SECTION XX N 0.080 0.105 2.04 2.66
1 2 3 N C P --- 0.100 --- 2.54
R 0.135 --- 3.43 ---
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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 NPN MPS650 MPS651 PNP MPS750 MPS751

Notes

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 NPN MPS650 MPS651 PNP MPS750 MPS751

Notes

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 NPN MPS650 MPS651 PNP MPS750 MPS751

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