PD - 96909

DIGITAL AUDIO MOSFET IRFB4103PbF

Features
Key Parameters
Key parameters optimized for Class-D audio VDS 200 V
amplifier applications RDS(ON) typ. @ 10V 139 m:
Low RDSON for improved efficiency Qg typ. 25 nC
Low QG and QSW for better THD and improved Qsw typ. 15 nC
efficiency RG(int) typ. 1.0
Low QRR for better THD and lower EMI TJ max 175 C
175C operating junction temperature for
ruggedness
D
Can deliver up to 300W per channel into 8 load in
half-bridge topology

S
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,
robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 200 V
VGS Gate-to-Source Voltage 30
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current c 68
PD @TC = 25C Power Dissipation f 140 W
PD @TC = 100C Power Dissipation f 71
Linear Derating Factor 0.95 W/C
TJ Operating Junction and -55 to + 175 C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbxin (1.1Nxm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case f 1.05
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient f 62
Notes through are on page 2
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IRFB4103PbF
Electrical Characteristics @ T J = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BV DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, ID = 250A
V DSS/T J Breakdown Voltage Temp. Coefficient 0.21 V/C Reference to 25C, ID = 1mA
R DS(on) Static Drain-to-Source On-Resistance 139 165 m V GS = 10V, ID = 12A e
V GS(th) Gate Threshold Voltage 3.0 5.5 V V DS = V GS, ID = 250A
V GS(th)/T J Gate Threshold Voltage Coefficient -13 mV/C
IDSS Drain-to-Source Leakage Current 25 A V DS = 200V, V GS = 0V
250 V DS = 200V, V GS = 0V, T J = 125C
IGSS Gate-to-Source Forward Leakage 100 nA V GS = 30V
Gate-to-Source Reverse Leakage -100 V GS = -30V
g fs Forward Transconductance 7.1 S V DS = 50V, ID = 12A
Qg Total Gate Charge 25 38
Q gs1 Pre-Vth Gate-to-Source Charge 5.4 V DS = 160V
Q gs2 Post-Vth Gate-to-Source Charge 2.9 nC V GS = 10V
Q gd Gate-to-Drain Charge 12 ID = 12A
Q godr Gate Charge Overdrive 4.7 See Fig. 6 and 19
Q sw Switch Charge (Q gs2 + Q gd) 15
R G(int) Internal Gate Resistance 1.0
td(on) Turn-On Delay Time 9.6 V DD = 100V, V GS = 10V e
tr Rise Time 40 ID = 12A
td(off) Turn-Off Delay Time 16 ns R G = 2.5
tf Fall Time 5.4
C iss Input Capacitance 900 V GS = 0V
C oss Output Capacitance 120 pF V DS = 50V
C rss Reverse Transfer Capacitance 22 = 1.0MHz, See Fig.5
C oss Effective Output Capacitance 150 V GS = 0V, V DS = 0V to 160V
LD Internal Drain Inductance 4.5 Between lead, D

nH 6mm (0.25in.)
G
LS Internal Source Inductance 7.5 from package
S
and center of die contact

Avalanche Characteristics
Parameter Typ. Max. Units
E AS Single Pulse Avalanche Energy d 130 mJ
IAR Avalanche Current g See Fig. 14, 15, 17a, 17b A
E AR Repetitive Avalanche Energy g mJ

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS @ T C = 25C Continuous Source Current 17 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current 68 integral reverse
(Body Diode) c p-n junction diode.
V SD Diode Forward Voltage 1.7 V T J = 25C, IS = 10A, V GS = 0V e
trr Reverse Recovery Time 130 200 ns T J = 25C, IF = 12A
Q rr Reverse Recovery Charge 730 110 nC di/dt = 100A/s e
Notes:
Repetitive rating; pulse width limited by max. junction temperature. R is measured at TJ of approximately 90C.
Starting TJ = 25C, L = 1.78mH, RG = 25, IAS = 12A. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
Pulse width 400s; duty cycle 2%. avalanche information
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 IRFB4103PbF
100 100
VGS VGS
TOP 15V TOP 15V
12V 12V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

10V 10V
9.0V 9.0V
8.0V 8.0V
7.0V 7.0V
10 BOTTOM 6.0V BOTTOM 6.0V

10

1 6.0V
6.0V

60s PULSE WIDTH 60s PULSE WIDTH

Tj = 25C Tj = 175C
0.1 1
0.1 1 10 100 0.1 1 10 100

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100.0 3.5
ID = 17A

RDS(on) , Drain-to-Source On Resistance

VGS = 10V
3.0
ID, Drain-to-Source Current()

10.0 TJ = 175C 2.5

(Normalized)

2.0

1.0 TJ = 25C 1.5

VDS = 50V 1.0

60s PULSE WIDTH
0.1
0.5
2.0 4.0 6.0 8.0 10.0 12.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

10000 20
VGS = 0V, f = 1 MHZ ID= 12A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 160V
VGS, Gate-to-Source Voltage (V)

Crss = Cgd
16 VDS= 100V
Coss = Cds + Cgd VDS= 40V
C, Capacitance (pF)

1000 Ciss
12

Coss 8
100

4
Crss

0
10
0 10 20 30 40
1 10 100 1000
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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 IRFB4103PbF
100.0 1000
OPERATION IN THIS AREA
TJ = 175C LIMITED BY R DS (on)

ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

100
10.0
100sec
10

1msec
1.0 TJ = 25C
1 10msec
Tc = 25C
Tj = 175C
VGS = 0V Single Pulse DC
0.1 0.1
0.0 0.5 1.0 1.5 2.0 1 10 100 1000

VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area

20 5.5

5.0

VGS(th) Gate threshold Voltage (V)

16
4.5
ID , Drain Current (A)

ID = 250A
4.0
12

3.5

8
3.0

2.5
4
2.0

0 1.5
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175

TJ , Junction Temperature (C) TJ , Temperature ( C )

Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature

10
Thermal Response ( Z thJC )

1
D = 0.50

0.20
0.10 R1 R2 R3
0.1 R1 R2 R3 Ri (C/W) i (sec)
J
0.05 J C
0.1624 0.000094
1 2 3
0.02 1 2 3 0.4354 0.001831
0.01
0.01 Ci= i/Ri 0.4517 0.018175
Ci i/Ri

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRFB4103PbF
1.0 600
RDS (on), Drain-to -Source On Resistance ()

EAS, Single Pulse Avalanche Energy (mJ)

ID = 12A ID
0.9
500 TOP 3.7A
0.8 6.2A
BOTTOM 12A
0.7
400
0.6

0.5 300
0.4
TJ = 125C
0.3 200

0.2 TJ = 25C
100
0.1

0.0
0
6.0 8.0 10.0 12.0 14.0 16.0 18.0
25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)

Fig 12. On-Resistance Vs. Gate Voltage Fig 13. Maximum Avalanche Energy Vs. Drain Current
100
Duty Cycle = Single Pulse

Allowed avalanche Current vs

Avalanche Current (A)

10 0.01 avalanche pulsewidth, tav

assuming Tj = 25C due to
avalanche losses. Note: In no
0.05 case should Tj be allowed to
exceed Tjmax
0.10
1

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current Vs.Pulsewidth

140 Notes on Repetitive Avalanche Curves , Figures 14, 15:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
120
ID = 12A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

temperature far in excess of Tjmax. This is validated for

100 every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
80
3. Equation below based on circuit and waveforms shown in
Figures 17a, 17b.
60 4. PD (ave) = Average power dissipation per single
avalanche pulse.
40 5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
20
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 14, 15).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting TJ , Junction Temperature (C)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2DT/ [1.3BVZth]
Fig 15. Maximum Avalanche Energy Vs. Temperature EAS (AR) = PD (ave)tav
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IRFB4103PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

VGS=10V *
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

RG dv/dt controlled by RG VDD Re-Applied

Driver same type as D.U.T. + Voltage Body Diode Forward Drop
ISD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
D.U.T. - Device Under Test

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01
I AS

Fig 17a. Unclamped Inductive Test Circuit Fig 17b. Unclamped Inductive Waveforms

LD
VDS VDS
90%
+
VDD -

D.U.T 10%
VGS VGS
Pulse Width < 1s
Duty Factor < 0.1% td(on) tr td(off) tf

Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms
Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 19a. Gate Charge Test Circuit Fig 19b Gate Charge Waveform
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 IRFB4103PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997 INT E R NAT IONAL PAR T NU MB E R
IN T H E AS S E MB L Y L INE "C" R E CT IF IE R
L OGO
Note: "P" in assembly line
position indicates "Lead-Free" DAT E CODE
YE AR 7 = 1997
AS S E MB L Y
L OT CODE WE E K 19
L INE C

TO-220AB packages are not recommended for Surface Mount Application.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/05
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/