Apendice A

Proyectos sugeridos y hojas de datos de

los dispositivos utilizados

En este apendice se presentan los proyectos que se sugieren a los estudiantes, as como las hojas de
datos de algunos dispositivos optoelectronicos utilizados en las practicas desarrolladas en este documento.
De forma general, se presenta una lista de posibles proyectos para realizar al final del semestre y las hojas
de las caractersticas mas importantes del dispositivo, para un mayor detalle de los dispositivos consultar
los manuales del fabricante.

Detector de mentiras.

Luz automatica.

Detector de humo.

Detector de humedad.

Amplificador de audio.

Control de nivel.

Indicador de nivel

51
Apendice B

Diodos 1N4001-1N4007 y
1N5624GP-1N5627GP

52
 MCC TM
Micro Commercial Components 1N4001
20736 Marilla Street Chatsworth
Micro Commercial Components
 THRU
  !"#
$
%    !"# 1N4007
Features
Halogen free available upon request by adding suffix "-HF"
Low Current Leakage and Low Cost
Lead Free Finish/RoHS Compliant (Note1) ("P"Suffix designates

Compliant. See ordering information) 1 Amp Rectifier

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1
50 - 1000 Volts
Maximum Ratings
Operating Temperature: -55C to +150C
Storage Temperature: -55C to +150C DO-41
Typical Thermal Resistance: 35 C/W Junction to Case
25C/W Junction to Lead at 0.375"
Lead Length P.C.B. Mounted
MCC Device Maximum Maximum Maximum
Catalog Marking Recurrent RMS DC
Number Peak Voltage Blocking D
Reverse Voltage
Voltage
1N4001 1N4001 50V 35V 50V
1N4002 1N4002 100V 70V 100V
A
1N4003 1N4003 200V 140V 200V Cathode
Mark
1N4004 1N4004 400V 280V 400V
1N4005 1N4005 600V 420V 600V B

1N4006 1N4006 800V 560V 800V

1N4007 1N4007 1000V 700V 1000V D

Electrical Characteristics @ 25C Unless Otherwise Specified

Average Forward IF(AV) 1.0A TA = 75C
C
Current
Peak Forward Surge IFSM 30A 8.3ms, half sine
Current
Maximum Instantaneous IFM = 1.0A;
Forward Voltage VF 1.0V TJ = 25C* DIMENSIONS
Maximum DC
Reverse Current At IR 5.0A TJ = 25C INCHES MM
DIM MIN MAX MIN MAX NOTE
Rated DC Blocking 50A TJ = 125C A .166 .205 4.10 5.20
Voltage B .080 .107 2.00 2.70
C .028 .034 .70 .90
Typical Junction CJ 15pF Measured at D 1.000 --- 25.40 ---
Capacitance 1.0MHz, VR=4.0V
Typical Reverse Trr 2.0us IF=0.5A, IR=1.0A,
Recovery Time Irr=0.25A
Rating for fusing I2t 3.7A2s t<8.3ms

*Pulse test: Pulse width 300 sec, Duty cycle 2%

Note: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

www.mccsemi.com
Revision: F 53 2015/01/01
 1N5624GP, 1N5625GP, 1N5626GP, 1N5627GP
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Plastic Rectifier
FEATURES
Superectifier structure for high reliability
application
SUPERECTIFIER
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Solder dip 275 C max. 10 s, per JESD 22-B106
DO-201AD Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS For use in general purpose rectification of power supplies,
IF(AV) 3.0 A inverters, converters, and freewheeling diodes application.
VRRM 200 V, 400 V, 600 V, 800 V
IFSM 125 A MECHANICAL DATA
IR 5.0 A Case: DO-201AD, molded epoxy over glass body
VF 0.95 V Molding compound meets UL 94 V-0 flammability rating
TJ max. 175 C Base P/N-E3 - RoHS-compliant, commercial grade
Package DO-201AD Terminals: Matte tin plated leads, solderable per
Diode variations Single die J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 C unless otherwise noted) (1)

PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
Maximum DC blocking voltage VDC 200 400 600 800 V
Maximum average forward rectified current
IF(AV) 3.0 A
0.375" (9.5 mm) lead length at TA = 70 C
Peak forward surge current 8.3 ms single half
IFSM 125 A
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle average
IR(AV) 200 A
0.375" (9.5 mm) lead length at TA = 70 C
Operating junction and storage temperature range TJ, TSTG -65 to +175 C

Note
(1) JEDEC registered values

Revision: 09-Jun-16 54 Document Number: 88524

Apendice C

Diodos Zener

55
 1N4728A - 1N4758A Zener Diodes
April 2009

1N4728A - 1N4758A
Zener Diodes

Tolerance = 5%

DO-41 Glass case

COLOR BAND DENOTES CATHODE

Absolute Maximum Ratings * Ta = 25C unless otherwise noted

Symbol Parameter Value Units

PD Power Dissipation 1.0 W
@ TL 50C, Lead Length = 3/8
Derate above 50C 6.67 mW/C
TJ, TSTG Operating and Storage Temperature Range -65 to +200 C
* These ratings are limiting values above which the serviceability of the diode may be impaired.

Electrical Characteristics Ta = 25C unless otherwise noted

Leakage Non-Repetitive
VZ (V) @ IZ (Note 1) Max. Zener Impedance
Test Current Current Peak Reverse
Device
IZ (mA) ZZ @ IZ ZZK @ IZK IR VR Current
Min. Typ. Max.
() IZK () (mA) (A) (V) IZSM (mA) (Note 2)
1N4728A 3.135 3.3 3.465 76 10 400 1 100 1 1380
1N4729A 3.42 3.6 3.78 69 10 400 1 100 1 1260
1N4730A 3.705 3.9 4.095 64 9 400 1 50 1 1190
1N4731A 4.085 4.3 4.515 58 9 400 1 10 1 1070
1N4732A 4.465 4.7 4.935 53 8 500 1 10 1 970
1N4733A 4.845 5.1 5.355 49 7 550 1 10 1 890
1N4734A 5.32 5.6 5.88 45 5 600 1 10 2 810
1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 730
1N4736A 6.46 6.8 7.14 37 3.5 700 1 10 4 660
1N4737A 7.125 7.5 7.875 34 4 700 0.5 10 5 605
1N4738A 7.79 8.2 8.61 31 4.5 700 0.5 10 6 550
1N4739A 8.645 9.1 9.555 28 5 700 0.5 10 7 500
1N4740A 9.5 10 10.5 25 7 700 0.25 10 7.6 454
1N4741A 10.45 11 11.55 23 8 700 0.25 5 8.4 414
1N4742A 11.4 12 12.6 21 9 700 0.25 5 9.1 380

2009 Fairchild Semiconductor Corporation 56 www.fairchildsemi.com

1N4728A - 1N4758A Rev. H3
Apendice D

LM317-2 y LM7805

57
 LM217, LM317

1.2 V to 37 V adjustable voltage regulators

Datasheet - production data

Description
The LM217, LM317 are monolithic integrated
circuits in TO-220, TO-220FP and DPAK
packages intended for use as positive adjustable
voltage regulators. They are designed to supply
more than 1.5 A of load current with an output
TO-220 TO-220FP voltage adjustable over a 1.2 to 37 V range. The
nominal output voltage is selected by means of a
resistive divider, making the device exceptionally
easy to use and eliminating the stocking of many
fixed regulators.

DPAK

Features
Output voltage range: 1.2 to 37 V
Output current in excess of 1.5 A
0.1 % line and load regulation
Floating operation for high voltages
Complete series of protections: current limiting,
thermal shutdown and SOA control

Table 1. Device summary

Order codes

TO-220 (single gauge) TO-220 (double gauge) DPAK (tape and reel) TO-220FP

LM217T LM217T-DG LM217D2T-TR

LM317T LM317T-DG LM317D2T-TR LM317P
LM317BT

March 2014 DocID2154 Rev 19 1/25

This is information on a product in full production. 58 www.st.com
LM217, LM317 Pin configuration

1 Pin configuration

Figure 1. Pin connections (top view)

72 72)3

'3$.

DocID2154 Rev 19 3/25

59 25
Maximum ratings LM217, LM317

2 Maximum ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V I - VO Input-reference differential voltage 40 V

IO Output current Internally limited A
LM217 - 25 to 150
C
TOP Operating junction temperature for: LM317 0 to 125
LM317B -40 to 125
PD Power dissipation Internally limited
TSTG Storage temperature - 65 to 150 C

Note: Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these condition is not implied.

Table 3. Thermal data

Symbol Parameter DPAK TO-220 TO-220FP Unit

RthJC Thermal resistance junction-case 3 5 5 C/W

RthJA Thermal resistance junction-ambient 62.5 50 60 C/W

4/25 DocID2154 Rev 19

60
Electrical characteristics LM217, LM317

4 Electrical characteristics

VI - VO = 5 V, IO = 500 mA, IMAX = 1.5 A and PMAX = 20 W, TJ = - 55 to 150 C, unless

otherwise specified.

Table 4. Electrical characteristics for LM217

Symbol Parameter Test conditions Min. Typ. Max. Unit

TJ = 25C 0.01 0.02

VO Line regulation VI - VO = 3 to 40 V %/V
0.02 0.05

VO 5 V TJ = 25C 5 15
mV
IO = 10 mA to IMAX 20 50
VO Load regulation
VO 5 V, TJ = 25C 0.1 0.3
%
IO = 10 mA to IMAX 0.3 1
IADJ Adjustment pin current 50 100 A
IADJ Adjustment pin current VI - VO = 2.5 to 40V IO = 10 mA to IMAX 0.2 5 A
VI - VO = 2.5 to 40V IO= 10 mA to IMAX
VREF Reference voltage 1.2 1.25 1.3 V
PD PMAX
Output voltage
VO/VO 1 %
temperature stability
IO(min) Minimum load current VI - VO = 40 V 3.5 5 mA
VI - VO 15 V, PD < PMAX 1.5 2.2
IO(max) Maximum load current A
VI - VO = 40 V, PD < PMAX, TJ = 25C 0.4
Output noise voltage
eN B = 10Hz to 100kHz, TJ = 25C 0.003 %
(percentage of VO)
CADJ=0 65
SVR Supply voltage rejection (1) TJ = 25C, f = 120Hz dB
CADJ=10F 66 80
1. CADJ is connected between adjust pin and ground.

6/25 DocID2154 Rev 19

61
LM217, LM317 Electrical characteristics

VI - VO = 5 V, IO = 500 mA, IMAX = 1.5 A and PMAX = 20 W, TJ = 0 to 125 C, unless

otherwise specified.

Table 5. Electrical characteristics for LM317

Symbol Parameter Test conditions Min. Typ. Max. Unit

TJ = 25C 0.01 0.04

VO Line regulation VI - VO = 3 to 40 V %/V
0.02 0.07

VO 5 V TJ = 25C 5 25
mV
IO = 10 mA to IMAX 20 70
VO Load regulation
VO 5 V, TJ = 25C 0.1 0.5
%
IO = 10 mA to IMAX 0.3 1.5
IADJ Adjustment pin current 50 100 A
VI - VO = 2.5 to 40V,
IADJ Adjustment pin current 0.2 5 A
IO = 10 mA to 500mA
Reference voltage VI - VO = 2.5 to 40V IO = 10 mA to 500mA
VREF 1.2 1.25 1.3 V
(between pin 3 and pin 1) PD PMAX
Output voltage
VO/VO 1 %
temperature stability
IO(min) Minimum load current VI - VO = 40 V 3.5 10 mA
VI - VO 15 V, PD < PMAX 1.5 2.2
IO(max) Maximum load current A
VI - VO = 40 V, PD < PMAX, TJ = 25C 0.4
Output noise voltage
eN B = 10Hz to 100kHz, TJ = 25C 0.003 %
(percentage of VO)
CADJ=0 65
SVR Supply voltage rejection (1) TJ = 25C, f = 120Hz dB
CADJ=10F 66 80
1. CADJ is connected between adjust pin and ground.

DocID2154 Rev 19 7/25

62 25
Electrical characteristics LM217, LM317

VI - VO = 5 V, IO = 500 mA, IMAX = 1.5 A and PMAX = 20 W, TJ = - 40 to 125 C, unless

otherwise specified.

Table 6. Electrical characteristics for LM317B

Symbol Parameter Test conditions Min. Typ. Max. Unit

TJ = 25C 0.01 0.04

VO Line regulation VI - VO = 3 to 40 V %/V
0.02 0.07

VO 5 V TJ = 25C 5 25
mV
IO = 10 mA to IMAX 20 70
VO Load regulation
VO 5 V, TJ = 25C 0.1 0.5
%
IO = 10 mA to IMAX 0.3 1.5
IADJ Adjustment pin current 50 100 A
VI - VO = 2.5 to 40V,
IADJ Adjustment pin current 0.2 5 A
IO = 10 mA to 500mA
Reference voltage VI - VO = 2.5 to 40V IO = 10 mA to 500mA
VREF 1.2 1.25 1.3 V
(between pin 3 and pin 1) PD PMAX
Output voltage
VO/VO 1 %
temperature stability
IO(min) Minimum load current VI - VO = 40 V 3.5 10 mA
VI - VO 15 V, PD < PMAX 1.5 2.2
IO(max) Maximum load current A
VI - VO = 40 V, PD < PMAX, TJ = 25C 0.4
Output noise voltage
eN B = 10Hz to 100kHz, TJ = 25C 0.003 %
(percentage of VO)
CADJ=0 65
SVR Supply voltage rejection (1) TJ = 25C, f = 120Hz dB
CADJ=10F 66 80
1. CADJ is connected between adjust pin and ground.

8/25 DocID2154 Rev 19

63
64
65
66
Apendice E

Transistor BJT, 2N2222, KSC2383

67
68
69
70
2N2222 / 2N2222A

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.

The transistor is subdivided into one group

according to its DC current gain. As complementary
type the PNP transistor ST 2N2907 and ST
2N2907A are recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (Ta = 25 OC)

Symbol Value Unit

ST 2N2222 ST 2N2222A

Collector Base Voltage VCBO 60 75 V

Collector Emitter Voltage VCEO 30 40 V
Emitter Base Voltage VEBO 5 6 V
Collector Current IC 600 mA

Power Dissipation Ptot 625 mW

O
Junction Temperature Tj 150 C
O
Storage Temperature Range TS -55 to +150 C

G S P FORM A IS AVAILABLE

71
2N2222 / 2N2222A

Characteristics at Tamb=25 OC

Symbol Min. Typ. Max. Unit

DC Current Gain
at IC=0.1mA, VCE=10V hFE 35 - - -
at IC=1mA, VCE=10V hFE 50 - - -
at IC=10mA, VCE=10V hFE 75 - - -
at IC=150mA, VCE=10V ST 2N2222 hFE 100 - 300 -
at IC=500mA, VCE=10V ST hFE 30 - - -
2N2222A hFE 40 - - -
Collector Cutoff Current ST 2N2222
at VCB=50V ST ICBO - - 0.01 A
at VCB=60V 2N2222A ICBO - - 0.01 A
Collector Base Breakdown Voltage
at IC=10A ST 2N2222 V(BR)CBO 60 - - V
ST V(BR)CBO 75 - - V
Collector Emitter Breakdown Voltage
at IC=10mA ST 2N2222 V(BR)CEO 30 - - V
ST V(BR)CEO 40 - - V
Emitter Base Breakdown Voltage
at IE=10A ST 2N2222 V(BR)EBO 5 - - V
ST V(BR)EBO 6 - - V
Collector Saturation Voltage
at IC=150mA, IB=15mA ST 2N2222 VCE(sat) - - 0.4 V
ST VCE(sat) - - 0.3 V
at IC=500mA, IB=50mA 2N2222A VCE(sat) - - 1.6 V
ST 2N2222 VCE(sat) - - 1 V
Base Saturation Voltage
at IC=150mA, IB=15mA ST 2N2222 VBE(sat) - - 1.3 V
ST VBE(sat) 0.6 - 1.2 V
at IC=500mA, IB=50mA 2N2222A VBE(sat) - - 2.6 V
ST 2N2222 VBE(sat) - - 2.0 v
Gain Bandwidth Product
at IC=20mA, VCE=20V, f=100MHz fT 250 - - MHz
Collector Output Capacitance
at VCB=10V, f=1MHz Cob - - 8 pF
Input Capacitance
at VCB=0.5V, f=1MHz Cib - - 30 pF

G S P FORM A IS AVAILABLE

72
73
74
Apendice F

FET J111, 2N5457

75
76
77
 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
Discrete POWER & Signal
Technologies

2N5457 MMBF5457
2N5458 MMBF5458
2N5459 MMBF5459

D
G TO-92
S SOT-23 S
D
Mark: 6D / 61S / 6L

N-Channel General Purpose Amplifier

This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.

Absolute Maximum Ratings* TA = 25C unless otherwise noted

Symbol Parameter Value Units

VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage - 25 V
IGF Forward Gate Current 10 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25C unless otherwise noted

Symbol Characteristic Max Units

2N5457 *MMBF5457
PD Total Device Dissipation 625 350 mW
Derate above 25C 5.0 2.8 mW/C
RJC Thermal Resistance, Junction to Case 83.3 C/W
RJA Thermal Resistance, Junction to Ambient 200 357 C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation 78

 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
N-Channel General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS
V(BR)GSS Gate-Source Breakdown Voltage IG = 10 A, VDS = 0 - 25 V
IGSS Gate Reverse Current VGS = -15 V, VDS = 0 - 1.0 nA
VGS = -15 V, VDS = 0, TA = 100C - 200 nA
VGS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA 2N5457 - 0.5 - 6.0 V
2N5458 - 1.0 - 7.0 V
2N5459 - 2.0 - 8.0 V
VGS Gate-Source Voltage VDS = 15 V, ID = 100 A 2N5457 - 2.5 V
VDS = 15 V, ID = 200 A 2N5458 - 3.5 V
VDS = 15 V, ID = 400 A 2N5459 - 4.5 V

ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0 2N5457 1.0 3.0 5.0 mA
2N5458 2.0 6.0 9.0 mA
2N5459 4.0 9.0 16 mA

SMALL SIGNAL CHARACTERISTICS

gfs Forward Transfer Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz
2N5457 1000 5000 mhos
2N5458 1500 5500 mhos
2N5459 2000 6000 mhos
gos Output Conductance* VDS = 15 V, VGS = 0, f = 1.0 kHz 10 50 mhos
Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 4.5 7.0 pF
Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 1.5 3.0 pF
NF Noise Figure VDS = 15 V, VGS = 0, f = 1.0 kHz, 3.0 dB
RG = 1.0 megohm, BW = 1.0 Hz

*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%

Typical Characteristics

Transfer Characteristics Transfer Characteristics

79
Apendice G

Optoacoplador 4N25

80
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors

Optocoupler, Phototransistor Output, with Base Connection

FEATURES
1 6 B
Isolation test voltage 5000 VRMS
A
Interfaces with common logic families
C 2 5 C Input-output coupling capacitance < 0.5 pF
NC 3 4 E
Industry standard dual-in-line 6 pin package
Compliant to RoHS directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
21842
APPLICATIONS
i179004-5

AC mains detection
Reed relay driving
DESCRIPTION Switch mode power supply feedback
The 4N25 family is an industry standard single channel Telephone ring detection
phototransistor coupler. This family includes the 4N25,
Logic ground isolation
4N26, 4N27, 4N28. Each optocoupler consists of gallium
arsenide infrared LED and a silicon NPN phototransistor. Logic coupling with high frequency noise rejection

AGENCY APPROVALS
UL1577, file no. E52744
BSI: EN 60065:2002, EN 60950:2000
FIMKO: EN 60950, EN 60065, EN 60335

ORDER INFORMATION
PART REMARKS
4N25 CTR > 20 %, DIP-6
4N26 CTR > 20 %, DIP-6
4N27 CTR > 10 %, DIP-6
4N28 CTR > 10 %, DIP-6

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT
Reverse voltage VR 5 V
Forward current IF 60 mA
Surge current t 10 s IFSM 3 A
Power dissipation Pdiss 100 mW
OUTPUT
Collector emitter breakdown voltage VCEO 70 V
Emitter base breakdown voltage VEBO 7 V
IC 50 mA
Collector current
t 1 ms IC 100 mA
Power dissipation Pdiss 150 mW

81 Document Number: 83725

Rev. 1.8, 07-Jan-10
 4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

COUPLER
Isolation test voltage VISO 5000 VRMS
Creepage distance 7 mm
Clearance distance 7 mm
Isolation thickness between emitter and
0.4 mm
detector
Comparative tracking index DIN IEC 112/VDE 0303, part 1 175
VIO = 500 V, Tamb = 25 C RIO 1012
Isolation resistance
VIO = 500 V, Tamb = 100 C RIO 1011
Storage temperature Tstg - 55 to + 125 C
Operating temperature Tamb - 55 to + 100 C
Junction temperature Tj 125 C
max.10 s dip soldering:
Soldering temperature (2) distance to seating plane Tsld 260 C
1.5 mm
Notes
(1) T
amb = 25 C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).

ELECTRICAL CHARACTERISTICS (1)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage (2) IF = 50 mA VF 1.3 1.5 V
Reverse current (2) VR = 3 V IR 0.1 100 A
Capacitance VR = 0 V CO 25 pF
OUTPUT
Collector base breakdown voltage (2) IC = 100 A BVCBO 70 V
Collector emitter breakdown voltage (2) IC = 1 mA BVCEO 30 V
Emitter collector breakdown voltage (2) IE = 100 A BVECO 7 V
4N25 5 50 nA
4N26 5 50 nA
ICEO(dark) (2) VCE = 10 V, (base open)
4N27 5 50 nA
4N28 10 100 nA
VCB = 10 V,
ICBO(dark) (2) 2 20 nA
(emitter open)
Collector emitter capacitance VCE = 0 CCE 6 pF
COUPLER
Isolation test voltage (2) Peak, 60 Hz VIO 5000 V
Saturation voltage, collector emitter ICE = 2 mA, IF = 50 mA VCE(sat) 0.5 V
Resistance, input output (2) VIO = 500 V RIO 100 G
Capacitance, input output f = 1 MHz CIO 0.6 pF
Notes
(1) T
amb = 25 C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2) JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.

Document Number: 83725 For technical questions, contact: optocoupleranswers@vishay.com www.vishay.com

Rev. 1.8, 07-Jan-10 133
4N25, 4N26, 4N27, 4N28
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

CURRENT TRANSFER RATIO (1)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

4N25 CTRDC 20 50 %
4N26 CTRDC 20 50 %
DC current transfer ratio VCE = 10 V, IF = 10 mA
4N27 CTRDC 10 30 %
4N28 CTRDC 10 30 %
Note
(1) Indicates JEDEC registered values.

SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise and fall times VCE = 10 V, IF = 10 mA, RL = 100 tr, tf 2 s

TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified

1.4 1.5
Normalized to:
1.3 VCE = 10 V, IF = 10 mA, TA = 25 C
VF -Forward Voltage (V)

TA = - 55 C NCTR - Normalized CTR

CTRCE(sat) VCE = 0.4 V
1.2
1.0
TA = 25 C
1.1 TA = 50 C

1.0
0.5
0.9
TA = 85 C NCTR(SAT)
0.8 NCTR

0.7 0.0
0.1 1 10 100 0.1 1 10 100
i4n25_01 IF - Forward Current (mA) i4n25_03 IF - LED Current (mA)

Fig. 1 - Forward Voltage vs. Forward Current Fig. 3 - Normalized Non-Saturated and Saturated CTR vs.
LED Current

1.5 1.5
Normalized to: Normalized to:
VCE = 10 V, IF = 10 mA, TA = 25 C VCE = 10 V, IF = 10 mA, TA = 25 C
NCTR - Normalized CTR

NCTR - Normalized CTR

CTRCE(sat) = 0.4 V CTRCE(sat) VCE = 0.4 V

1.0 1.0
TA = 25 C TA = 70 C

0.5 0.5

NCTR(SAT) NCTR(SAT)
NCTR
NCTR
0.0 0.0
0 1 10 100 0.1 1 10 100
i4n25_02 IF - LED Current (mA) i4n25_04 IF - LED Current (mA)

Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. Fig. 4 - Normalized Non-Saturated and Saturated CTR vs.
LED Current LED Current

www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83725

134 Rev. 1.8, 07-Jan-10
Apendice H

OPAM LM358A, LM741

87
 www.fairchildsemi.com

LM2904,LM358/LM358A,LM258/
LM258A
Dual Operational Amplifier
Features
Internally Frequency Compensated for Unity Gain
Large DC Voltage Gain: 100dB
Wide Power Supply Range:
LM258/LM258A, LM358/LM358A: 3V~32V (or 1.5V
~ 16V)
LM2904 : 3V~26V (or 1.5V ~ 13V)
Input Common Mode Voltage Range Includes Ground
Large Output Voltage Swing: 0V DC to Vcc -1.5V DC
Power Drain Suitable for Battery Operation.
Description
The LM2904,LM358/LM358A, LM258/LM258A consist of
two independent, high gain, internally frequency
compensated operational amplifiers which were designed
specifically to operate from a single power supply over a
wide range of voltage. Operation from split power supplies
is also possible and the low power supply current drain is
independent of the magnitude of the power supply voltage.
Application areas include transducer amplifier, DC gain
blocks and all the conventional OP-AMP circuits which now
can be easily implemented in single power supply systems.

8-DIP

1
8-SOP

Internal Block Diagram

OUT1 1 8 VCC

IN1 (-) 2 - 7 OUT2

+
IN1 (+) 3 6 IN2 (-)
-

GND 4 + 5 IN2 (+)

Rev. 1.0.3
2010 Fairchild Semiconductor Corporation
LM2904,LM358/LM358A,LM258/LM258A

Schematic Diagram
(One section only)

VCC

Q5 Q6 Q12
Q17

Q19

Q20

Q2 Q3 R1
C1
IN(-) Q4 Q18
Q1

R2
IN(+) Q11 OUTPUT
Q21
Q15
Q10
Q7
Q13
Q8 Q9 Q14 Q16

GND

Absolute Maximum Ratings

Parameter Symbol LM258/LM258A LM358/LM358A LM2904 Unit
Supply Voltage VCC 16 or 32 16 or 32 13 or 26 V
Differential Input Voltage VI(DIFF) 32 32 26 V
Input Voltage VI -0.3 to +32 -0.3 to +32 -0.3 to +26 V
Output Short Circuit to GND
- Continuous Continuous Continuous -
VCC15V, TA = 25C(One Amp)
Operating Temperature Range TOPR -25 ~ +85 0 ~ +70 -40 ~ +85 C
Maximun Junction Temperature TJ(MAX) +150 +150 +150 C
Storage Temperature Range TSTG -65 ~ +150 -65 ~ +150 -65 ~ +150 C

2
 LM2904,LM358/LM358A,LM258/LM258A

Electrical Characteristics
(VCC = 5.0V, VEE = GND, TA = 25C, unless otherwise specified)

LM258 LM358 LM2904

Parameter Symbol Conditions Unit
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
VCM = 0V to VCC
Input Offset -1.5V
VIO - 2.9 5.0 - 2.9 7.0 - 2.9 7.0 mV
Voltage VO(P) = 1.4V,
RS = 0
Input Offset
IIO - - 3 30 - 5 50 - 5 50 nA
Current
Input Bias
IBIAS - - 45 150 - 45 250 - 45 250 nA
Current
Input Voltage VCC = 30V VCC VCC VCC
VI(R) 0 - 0 - 0 - V
Range (LM2904, VCC=26V) -1.5 -1.5 -1.5
RL = , VCC = 30V
- 0.8 2.0 - 0.8 2.0 - 0.8 2.0 mA
(LM2904, VCC=26V)
Supply Current ICC
RL = , VCC = 5V - 0.5 1.2 - 0.5 1.2 - 0.5 1.2 mA
VCC = 15V,
Large Signal
GV RL= 2k 50 100 - 25 100 - 25 100 - V/mV
Voltage Gain
VO(P) = 1V to 11V
VO(H) VCC=30V RL = 2k 26 - - 26 - - 22 - - V
(VCC RL =
Output Voltage =26V for 10k 27 28 - 27 28 - 23 24 - V
Swing LM2904)
VO(L) VCC = 5V, RL= 10k - 5 20 - 5 20 5 20 mV
Common-Mode
CMRR - 70 85 - 65 80 - 50 80 - dB
Rejection Ratio
Power Supply
PSRR - 65 100 - 65 100 - 50 100 - dB
Rejection Ratio
Channel f = 1kHz to 20kHz
CS - 120 - - 120 - - 120 - dB
Separation (Note1)
Short Circuit to
ISC - - 40 60 - 40 60 - 40 60 mA
GND
VI(+) = 1V,
VI(-) = 0V,
ISOURCE 20 30 - 20 30 - 20 30 - mA
VCC = 15V,
VO(P) = 2V
VI(+) = 0V, VI(-) = 1V,
Output Current
VCC = 15V, 10 15 - 10 15 - 10 15 - mA
VO(P) = 2V
ISINK
VI(+) = 0V,VI(-) =1V ,
VCC = 15V, 12 100 - 12 100 - - - - A
VO(P) = 200mV
Differential
VI(DIFF) - - - VCC - - VCC - - VCC V
Input Voltage

Note:
1. This parameter, although guaranteed, is not 100% tested in production.

3
 LM741QML
www.ti.com SNOSAN4A AUGUST 2005 REVISED MARCH 2013

LM741QML Operational Amplifier

Check for Samples: LM741QML

1FEATURES
The amplifier offers many features which make
2
their application nearly foolproof: overload
protection on the input and output, no latch-up
when the common mode range is exceeded, as
well as freedom from oscillations
DESCRIPTION
The LM741 is a general purpose operational amplifier
which features improved performance over industry
standards such as the LM709. They are direct, plug-
in replacements for the 709C, LM201, MC1439 and
748 in most applications.

Connection Diagrams

Figure 1. Metal Can Package Figure 2. Dual-In-Line Package

See Package Number LMC0008C See Package Number NAB0008A

Figure 3. Ceramic Flatpak and SOIC Package

See Package Number NAD0010A & NAC0010A

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright 20052013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Bibliografa

[1] Cox James, Fundamentals of Linear Electronics Integrated and Discrete 2nd ed., Thomson Learning
United States of America, 2002.

[2] Floyd, L. Thomas, Dispositivos Electronicos Octava edicion Pearson, Prentice Hall, 2008.

[3] Saleh, Bahaa E. A., Teich Carl Malvin, Fundamentals of Photonics, J. W. Goodman, John Wi-
ley&Sons, Inc, 1991.

[4] Sinclair, R. Ian, Sensors and Transducer, Butterworth-Heinemann, London, England, 2001.

[5] Zbar B. Paul, Malvino, P. Albert, Miller, A. Michael, Practicas de Electronica, Alfaomega, 2001.

92
Indice alfabetico

amplificador operacional, 47 JFET, 39

amplificadores, 2
Livewire, 49
CI, 2
material N, 6
CI LM317, 30
material P, 6
contaminacion, 3
MOSFET, 39
DC, 44 multiplicador de voltaje, 19
detectores, 2
optoacoplador, 44
diodo zener, 29
osiladores, 2
diodos, 6
diodos tunel, 2 polarizaci
diodos uni on directa, 6
on, 2 polarizaci
diodos zener, 2 on inversa, 6
portadores mayoritarios, 4, 7
FET, 39
portadores minoritarios, 4, 7
filtro, 23
puente rectificador, 23
fotoemisor, 44
fotoreceptor, 44 rectificador de media onda, 23
fototransistor, 44 rectificador de onda completa, 23
fototriac, 44 rectificadores, 2
regulador con CI, 29
galio, 4
Regulador de voltaje, 28
germanio, 3
resistividad, 2
impurezas, 3
semiconductores, 2
indio, 4
silicio, 3

93
ITSSAT Jose Angel Nieves Vazquez

tipo N, 4, 6
tipo P, 4, 6
transistor bipolar, 34
transistor de efecto de campo, 39
transistores, 2

union PN, 6

voltaje de rizo, 25

94 Depto. Ing. Mecatronica