VS-ST700CL Series

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Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 910 A
FEATURES
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Designed and qualified for industrial level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
TO-200AC (B-PUK) DC motor controls
Controlled DC power supplies
AC controllers
PRODUCT SUMMARY
Package TO-200AC (B-PUK)
Diode variation Single SCR
IT(AV) 910 A
VDRM/VRRM 1200 V, 1600 V, 1800 V, 2000 V
VTM 1.80 V

IGT 100 mA
TJ -40 C to 125 C

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
910 A
IT(AV)
Ths 55 C
1857 A
IT(RMS)
Ths 25 C
50 Hz 15 700
ITSM A
60 Hz 16 400
50 Hz 1232
I2t kA2s
60 Hz 1125
VDRM/VRRM 1200 to 2000 V
tq Typical 150 s
TJ -40 to 125 C

VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE VRSM, MAXIMUM IDRM/IRRM MAXIMUM AT
TYPE VOLTAGE
PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE TJ = TJ MAXIMUM
NUMBER CODE
V V mA
12 1200 1300
16 1600 1700
VS-ST700CL 80
18 1800 1900
20 2000 2100

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current 180 conduction, half sine wave 910 (355) A
IT(AV)
at heatsink temperature double side (single side) cooled 55 (85) C
Maximum RMS on-state current IT(RMS) DC at 25 C heatsink temperature double side cooled 1857
t = 10 ms No voltage 15 700
t = 8.3 ms reapplied 16 400 A
Maximum peak, one-cycle
ITSM
non-repetitive surge current t = 10 ms 13 200
100 % VRRM
t = 8.3 ms reapplied Sinusoidal half wave, 13 800
t = 10 ms initial TJ = TJ maximum 1232
No voltage
t = 8.3 ms reapplied 1125
Maximum I2t for fusing I2t kA2s
t = 10 ms 100 % VRRM 871
t = 8.3 ms reapplied 795
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 12 321 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.00
V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.13
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.40
m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.35
Maximum on-state voltage VTM Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.80 V
Maximum holding current IH 600
TJ = 25 C, anode supply 12 V resistive load mA
Typical latching current IL 1000

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise Gate drive 20 V, 20 , tr 1 s
dI/dt 1000 A/s
of turned-on current TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/s
Typical delay time td 1.0
Vd = 0.67 % VDRM, TJ = 25 C
s
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s,
Typical turn-off time tq 150
VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s
off-state voltage
Maximum peak reverse and IRRM,
TJ = TJ maximum, rated VDRM/VRRM applied 80 mA
off-state leakage current IDRM

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TRIGGERING
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
Typ. Max.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0
W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage +VGM 20
TJ = TJ maximum, tp 5 ms V
Maximum peak negative gate voltage -VGM 5.0
TJ = -40 C 200 -
DC gate current required to trigger IGT TJ = 25 C Maximum required gate 100 200 mA
TJ = 125 C trigger/ 50 -
current/voltage are the lowest
TJ = -40 C value which will trigger all units 2.5 -
DC gate voltage required to trigger VGT TJ = 25 C 12 V anode to cathode applied 1.8 3.0 V
TJ = 125 C 1.1 -

DC gate current not to trigger IGD Maximum gate current/voltage 10 mA

not to trigger is the maximum
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
DC gate voltage not to trigger VGD cathode applied 0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ -40 to 125
C
Maximum storage temperature range TStg -40 to 150
DC operation single side cooled 0.073
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation double side cooled 0.031
K/W
DC operation single side cooled 0.011
Maximum thermal resistance, case to heatsink RthC-hs
DC operation double side cooled 0.006
14 700 N
Mounting force, 10 %
(1500) (kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

RthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
CONDUCTION ANGLE TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180 0.009 0.009 0.006 0.006
120 0.011 0.011 0.011 0.011
90 0.014 0.014 0.015 0.015 TJ = TJ maximum K/W
60 0.020 0.020 0.021 0.021
30 0.036 0.036 0.036 0.036
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC

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Maximum Allowable Heatsink Temperature (C)

Maximum Allowable Heatsink Temperature (C)

130 130
ST700C..L Series ST700C..L Series
120 (Single Side Cooled) 120 (Double Side Cooled)
RthJ-hs(DC) = 0.073 K/ W 110 RthJ-hs(DC) = 0.031 K/ W
110
100
100
90
90 80 Conduction Period
Conduction Angle
80 70
30
60 60
70
30 90
60 50
60 90
120 40 120
50 180 180
30
DC
40 20
0 100 200 300 400 500 600 700 0 400 800 1200 1600 2000
Average On-state Current (A)
Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

Maximum Allowable Heatsink Temperature (C)

Maximum Average On-state Power Loss (W)

130 2800
ST700C..L Series 180
120 (Single Side Cooled ) 120
2400
110 RthJ-hs(DC) = 0.073 K/ W 90
60
100 2000 30
90 RMSLimit
Conduction Period
1600
80
70 1200
60
Conduction Angle
50 800
30
60
40 90 ST700C..L Series
400
120 TJ = 125C
30 180
DC
20 0
0 200 400 600 800 1000 0 200 400 600 800 1000 1200
Average On-state Current (A) Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics

Maximum Allowable Heatsink Temperature (C)

Maximum Average On-state Power Loss (W)

130 3500
ST700C..L Series DC
120 (Double Side Cooled) 180
3000
110 RthJ-hs(DC) = 0.031 K/ W 120
90
100 2500 60
90 30
Conduction Period
2000
80 RMSLimit
70 1500
30
60 60 Conduction Period
50 90 1000

40 120 ST700C..L Series

180 500 TJ = 125C
30
DC
20 0
0 400 800 1200 1600 2000 0 400 800 1200 1600 2000
Average On-state Current (A) Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics

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Peak Half Sine Wave On-state Current (A)

14000 16000
Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
Rated VRRM Applied Following Surge. 15000 Versus Pulse Train Duration. Control
13000
Initial TJ = 125C Of Conduc tion May Not Be Maintained.
@60 Hz 0.0083 s 14000 Initial TJ = 125C
12000
@50 Hz 0.0100 s 13000 No Voltage Reapplied
11000 Rated VRRM Reapplied
12000
10000 11000

9000 10000
9000
8000
8000
7000 ST700C..L Series ST700C..L Series
7000
6000 6000
1 10 100 0.01 0.1 1
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled

10000
Instantaneous On-state Current (A)

TJ = 25C

TJ = 125C

1000

ST700C..L Series

100
0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

0.1
Transient Thermal Impedance Z thJ-hs (K/ W)

ST700C..L Series

0.01
Steady Sta te Value
R thJ-hs = 0.073 K/ W
(Single Side Cooled)
RthJ-hs = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

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100
Rectangular gate pulse (1) PGM = 10W, tp = 4ms
a) Recommended load line for (2) PGM = 20W, tp = 2ms
Instantaneous Gate Voltage (V) rated di/ dt : 20V, 10ohms; tr<=1 s (3) PGM = 40W, tp = 1ms
b) Recommended load line for (4) PGM = 60W, tp = 0.66ms
<=30% rated di/ dt : 10V, 10ohms
10 tr<=1 s (a)
(b)

Tj=-40 C
Tj=25 C
Tj=125 C
1
(1) (2) (3) (4)
VGD
IGD
Device: ST700C..L Series Frequenc y Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code VS- ST 70 0 C 20 L 1 -

1 2 3 4 5 6 7 8 9

1 - Vishay Semiconductors product

2 - Thyristor
3 - Essential part number
4 - 0 = converter grade
5 - C = ceramic PUK
6 - Voltage code x 100 = VRRM (see Voltage Ratings table)
7 - L = PUK case TO-200AC (B-PUK)
8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
9 - Critical dV/dt: None = 500 V/s (standard selection)
L = 1000 V/s (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95076

Revision: 22-Dec-15 6 Document Number: 94413

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 Outline Dimensions
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B-PUK (TO-200AC)
DIMENSIONS in millimeters (inches)

Creepage distance: 36.33 (1.430) minimum

Strike distance: 17.43 (0.686) minimum

34 (1.34) DIA. MAX.

0.7 (0.03) MIN.
2 places
C

27 (1.06) MAX. Pin receptacle

AMP. 60598-1

0.7 (0.03) MIN. 53 (2.09) DIA. MAX. Note:

A = Anode
C = Cathode

6.2 (0.24) MIN.

4.7 (0.18) 20 5
58.5 (2.3) DIA. MAX.

36.5 (1.44)

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

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