EE311

Introduction to Semiconductor
Devices

L24 : PN Junction (part-7)

(p )

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

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Breakdown
I

Impact ionization
F

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Impact ionization can lead to avalanche multiplication

P F N

VR
-xxP xN

n( xn )
Multiplication coefficient M e
1

Breakdown condition : multiplication coefficient M e

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Ionization coefficient
N dx
d probability
b bili that
h an electron
l causes an impact
i
ionization within dx

P dx probability that a hole causes an impact

ionization within dx
N P 1.8 10 F
35 7

P F N

VR
-xP dx xN

dn( x) n( x) N dx p ( x) P dx
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 P F N

VR
-xP dx xN

d ( x) n( x) N dx
dn d p( x) P dx
d

n(xn)

p(x)

n( x ) p( x ) n( xN )
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 dn
( N P )n( x ) P n( xN ) n( xN )
dx
xN xN
ddn xN
x dx dx n( xN ) x dx n( xN ) 1 n( xN ) dx
P P
xP

n( xN ) 1
Me xN
1
1 dx
xP
d

xN

Breakdown : M e dx 1
xP
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 + F N
P

VR
-xP xN

dx 1 N P 1.8 10 F
35 7

q
F ( x) N D (W x ) WBV 2.67 1010 N D7 8
Si
1 q
Vbi BV N DWBv2 5.34 1013 N D3 4
2 Si

q
Fmax N DWBv 4010 N D1 8
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Si 152
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 q
ma 18
Fmax N DWBv 4010 N
Si B D

5 17 -3
Fmax. =5.310 V/cm for N D = 10 cm

5 16 -3
Fmax. =410 V/cm for N D = 10 cm

Breakdown will occur whenever maximum field exceeds critical

5
field FC.
C ~ 310 V/cm

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Example-1
g for a p n junction
Determine breakdown voltage j with
N D = 2 x 10 16 cm -3

Breakdown will occur whenever maximum field exceeds critical

5
field FC. ~ 310 V/cm
F

F x S Fmax (
q
N D ) W
x Si
1 qN DW
Vbi BV W
2 Si
Si 2
Fmax
Vbi BV 14.5V
2q N D
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 EC

qVbi

EF

EV

Eg
kT NC
Vbi ln( ) 0.93V
q q ND

Vbi BV 14.5V BV 13.6V

Si F 2
For a P+ N diode : BV ~ max
2q N D
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Example-2
g for a p -i-n jjunction with
Determine breakdown voltage
i-region thickness of 10 m.
+ +
P i N

VR

10m F

F x S
x

Fmax. =3105 V/cm

~1.9nm for 1019
Vbi BV 300V
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 EC

qVbi
EF

EV

Eg
Vbi 1.1V
q

T
Temperature
t coefficient
ffi i t off BV ? +Ve
V
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Cylindrical PN Junction

rj P
+
ND

rd

1 d qN D qN D ( rd2 r 2 )
( r Fr ) Fr
r dr
d s 2 S r

N D rj rd
2 2
qN rd
Vbi BV { rd ln( )}
2

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2 S 2 rj 158
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 Junction depth (rj) BV (V)
(m)

10 12.77

1 8.6

0.1 2.3

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Avalanche Photodiode
+ N
P F

VR

Avalanche multiplication results in current gain

C30737PH and C30737LH Series

Epitaxial Silicon Avalanche Photodiodes

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Zener Breakdown
O
Occurs in
i hheavily
il ddoped
d jjunctions
ti

EC

EV

Eg
d~ 50 Ao N
qF

F 2 106 Vcm -1 161

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