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IRLB4132PbF
Applications HEXFET Power MOSFET
l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg
l Low Voltage Power Tools
30V 3.5m 36nC
Benefits
D
l Best in Class Performance for UPS/Inverter
Applications
l Very Low RDS(on) at 4.5V VGS
S
D
l Ultra-Low Gate Impedance G
l Fully Characterized Avalanche Voltage
TO-220AB
and Current
l Lead-Free
G D S
Gate Drain Source
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd 310 mJ
EAS Single Pulse Avalanche Energyi 900 mJ
IAR Avalanche Currentc 32 A
EAR Repetitive Avalanche Energy c 14 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current
(Body Diode)
150 f MOSFET symbol
showing the
A
ISM Pulsed Source Current integral reverse
620
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage 1.0 V TJ = 25C, IS = 32A, VGS = 0V e
trr Reverse Recovery Time 29 44 ns TJ = 25C, IF = 32A, VDD = 15V
Qrr Reverse Recovery Charge 49 74 nC di/dt = 200A/s e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRLB4132PbF
1000 1000
VGS VGS
TOP 10V TOP 10V
9.0V 9.0V
7.0V 7.0V
5.0V 5.0V
4.5V 4.5V
4.0V 4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V
100 100
1000 2.0
ID = 78A
RDS(on) , Drain-to-Source On Resistance
T J = 25C
VGS = 10V
T J = 175C
ID, Drain-to-Source Current (A)
100 1.5
(Normalized)
10 1.0
VDS = 15V
60s PULSE WIDTH
1.0 0.5
1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
100000 14.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 32A
C rss = C gd 12.0 VDS= 24V
10000
Ciss
8.0
Coss 6.0
1000
Crss 4.0
2.0
100 0.0
1 10 100 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
1000 10000
100 1000
100sec
100 1msec
10
10msec
TJ = 25C
1 10
Tc = 25C
Tj = 175C
VGS = 0V Single Pulse DC
0.1 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
160 2.5
140
120 2.0
ID, Drain Current (A)
100
80 1.5 ID = 100A
ID = 250A
60
ID = 1.0mA
40 1.0
20
0 0.5
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200
T C , Case Temperature (C) T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
Thermal Response ( Z thJC ) C/W
1
D = 0.50
0.20
0.1 0.10
0.05
R1 R2 R3 R4
Ri (C/W) i (sec)
0.02 R1 R2 R3 R4
0.85073 0.006515
J C
0.01 0.01 J 0.00562 8.246536
1 2 3 4
1 2 3 4
0.00099 6.148011
Ci= i/Ri
Ci i/Ri 0.25266 0.000371
0.001 SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
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IRLB4132PbF
9 1400
RDS(on), Drain-to -Source On Resistance (m )
6 800
5 600
T J = 125C
4 400
T J = 25C
3 200
2 0
3 4 5 6 7 8 9 10 25 50 75 100 125 150 175
VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage Fig 13c. Maximum Avalanche Energy
vs. Drain Current
15V
RD
V DS
L DRIVER V GS
VDS D.U.T.
RG
+
-V DD
RG D.U.T +
V
- DD
IAS A VGS
20V
VGS
tp 0.01 Pulse Width 1 s
Duty Factor 0.1 %
Fig 13a. Unclamped Inductive Test Circuit Fig 14a. Switching Time Test Circuit
V(BR)DSS
VDS
tp
90%
10%
VGS
td(on) tr t d(off) tf
I AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
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IRLB4132PbF
VGS=10V *
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple 5% ISD
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
50K
Vgs
12V .2F
.3F
+
V
D.U.T. - DS
Vgs(th)
VGS
3mA
Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveform
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IRLB4132PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLB4132PbF
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
`Repetitive rating; pulse width limited by When mounted on 1" square PCB (FR-4 or G-10 Material).
max. junction temperature. For recommended footprint and soldering techniques refer
Starting TJ = 25C, L = 0.61mH, RG = 25, to application note #AN-994.
IAS = 32A. R is measured at TJ approximately 90C.
Pulse width 400s; duty cycle 2%. Starting TJ = 25C, L = 0.50mH, RG = 25,
Calculated continuous current based on maximum IAS = 60A, VDD = 25V.
allowable junction temperature. Package limitation
current is 78A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2009
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