Si4946BEY

Vishay Siliconix

Dual N-Channel 60-V (D-S) 175 C MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) () ID (A) Qg (Typ.) Halogen-free According to IEC 61249-2-21
Definition
0.041 at VGS = 10 V 6.5
60 9.2 nC TrenchFET Power MOSFET
0.052 at VGS = 4.5 V 5.8
175 C Maximum Junction Temperature
100 % Rg Tested
Compliant to RoHS directive 2002/95/EC
SO-8

D1 D2
S1 1 8 D1

G1 2 7 D1

S2 3 6 D2

G2 4 5 D2 G1 G2

Top View

S1 S2
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS 20
TC = 25 C 6.5
TC = 70 C 5.5
Continuous Drain Current (TJ = 150 C) ID
TA = 25 C 5.3a, b
TA = 70 C 4.4a, b
A
Pulsed Drain Current IDM 30
TC = 25 C 3.1
Continuous Source Drain Diode Current IS
TA = 25 C 2a, b
Avalanche Current IAS 12
L = 0 1 mH
Single-Pulse Avalanche Energy EAS 7.2 mJ
TC = 25 C 3.7
TC = 70 C 2.6
Maximum Power Dissipation PD W
TA = 25 C 2.4a, b
TA = 70 C 1.7a, b
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient a, c t 10 s RthJA 50 62.5
C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 33 41
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 C/W.

Document Number: 73411 www.vishay.com

S09-2434-Rev. C, 16-Nov-09 1
Si4946BEY
Vishay Siliconix

SPECIFICATIONS TJ = 25 C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 60 V
VDS Temperature Coefficient VDS/TJ 53
ID = 250 A mV/C
VGS(th) Temperature Coefficient VGS(th)/TJ - 6.7
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.0 2.4 3.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS A
VDS = 60 V, VGS = 0 V, TJ = 55 C 10
On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 5.3 A 0.033 0.041
Drain-Source On-State Resistancea RDS(on)
VGS = 4.5 V, ID = 4.7 A 0.041 0.052
Forward Transconductancea gfs VDS = 15 V, ID = 5.3 A 24 S
Dynamicb
Input Capacitance Ciss 840
Output Capacitance Coss VDS = 30 V, VGS = 0 V, f = 1 MHz 71 pF
Reverse Transfer Capacitance Crss 44
VDS = 30 V, VGS = 10 V, ID = 5.3 A 17 25
Total Gate Charge Qg
9.2 12
nC
Gate-Source Charge Qgs VDS = 30 V, VGS = 5 V, ID = 5.3 A 3.3
Gate-Drain Charge Qgd 3.7
Gate Resistance Rg f = 1 MHz 3.1 6.5 9.5
Turn-On Delay Time td(on) 20 30
Rise Time tr VDD = 30 V, RL = 6.8 120 180
Turn-Off Delay Time td(off) ID 4.4 A, VGEN = 4.5 V, Rg = 1 20 30
Fall Time tf 30 45
ns
Turn-On Delay Time td(on) 10 15
Rise Time tr VDD = 30 V, RL = 6.8 12 20
Turn-Off Delay Time td(off) ID 4.4 A, VGEN = 10 V, Rg = 1 25 40
Fall Time tf 10 15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 C 3.1
A
Pulse Diode Forward Currenta ISM 30
Body Diode Voltage VSD IS = 2 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr 25 50 ns
Body Diode Reverse Recovery Charge Qrr 25 50 nC
IF = 4.4 A, dI/dt = 100 A/s, TJ = 25 C
Reverse Recovery Fall Time ta 18
ns
Reverse Recovery Rise Time tb 7
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 73411

2 S09-2434-Rev. C, 16-Nov-09
 Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

30 10

VGS = 10 V thru 5 V
25
8
I D - Drain Current (A)

ID - Drain Current (A)

20
4V 6

15

4
10 TC = 150 C

2 25 C
5

3V - 55 C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.100 1200

1000
0.080
R DS(on) - On-Resistance (m)

Ciss
C - Capacitance (pF)

800
0.060
VGS = 4.5 V 600

0.040
400
VGS = 10 V
0.020
200
Coss

Crss
0.000 0
0 5 10 15 20 25 30 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 2.2
ID = 5.3 A
ID = 5.3 A 2.0
VGS - Gate-to-Source Voltage (V)

8
1.8
R DS(on) - On-Resistance

VDS = 30 V VGS = 10 V
1.6
(Normalized)

VDS = 48 V 1.4 VGS = 4.5 V

4
1.2

1.0
2
0.8

0 0.6
0 4 8 12 16 20 - 50 - 25 0 25 50 75 100 125 150 175

Qg - Total Gate Charge (nC) TJ - Junction Temperature (C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 73411 www.vishay.com

S09-2434-Rev. C, 16-Nov-09 3
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

30 0.10

R DS(on) - Drain-to-Source On-Resistance ()

ID = 5.3 A
0.08

TJ = 150 C
I S - Source Current (A)

10 TJ = 175 C
0.06

0.04

TJ = 25 C TJ = 25 C
0.02

1 0.00
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

3.0 25

2.8

2.6 20
ID = 250 A
2.4
VGS(th) (V)

15
Power (W)

2.2

2.0
10
1.8

1.6
5
1.4

1.2 0
- 50 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000
TJ - Temperature (C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on)*
10
100 s
I D - Drain Current (A)

1 1 ms

10 ms

100 ms
0.1
TA = 25 C
Single Pulse 1s
10 s
DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient

www.vishay.com Document Number: 73411

4 S09-2434-Rev. C, 16-Nov-09
 Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

8 4.0

7 3.5

6 3.0
I D - Drain Current (A)

5 2.5

Power (W)
4 2.0

3 1.5

2 1.0

1 0.5

0 0.0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175

TC - Case Temperature (C) TC - Case Temperature (C)

Current Derating* Power, Junction-to-Case

100
I C - Peak Avalanche Current (A)

10

L ID
TA =
BV - V DD

1
0.000001 0.00001 0.0001 0.001

TA - Time In Avalanche (s)

Single Pulse Avalanche Capability

* The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 73411 www.vishay.com

S09-2434-Rev. C, 16-Nov-09 5
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 85 C/W

Single Pulse 3. T JM - TA = PDMZthJA(t)

4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1

0.05 Single Pulse

0.02
0.01
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73411.

www.vishay.com Document Number: 73411

6 S09-2434-Rev. C, 16-Nov-09
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0 8 0 8
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
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Revision: 13-Jun-16 1 Document Number: 91000