Transistor

2SD2321
Silicon NPN epitaxial planer type

For low-frequency power amplification

Unit: mm

4.00.2

3.00.2
Features
Low collector to emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with the

15.60.5
low-voltage power supply.

+0.2
0.450.1
marking

0.70.1

2.00.2
Absolute Maximum Ratings (Ta=25C) 1 2 3

Parameter Symbol Ratings Unit

Collector to base voltage VCBO 40 V
1.27 1.27
Collector to emitter voltage VCEO 20 V 2.540.15
Emitter to base voltage VEBO 7 V
Collector current IC 5 A 1:Emitter
2:Collector EIAJ:SC72
Peak collector current ICP 8 A
3:Base New S Type Package
Collector power dissipation PC 400 mW
Junction temperature Tj 150 C
Storage temperature Tstg 55 ~ +150 C

Electrical Characteristics (Ta=25C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = 10V, IE = 0 0.1 A
Collector cutoff current
ICEO VCE = 10V, IB = 0 1.0 A
Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 A
Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V
Emitter to base voltage VEBO IE = 10A, IC = 0 7 V
hFE1*1 VCE = 2V, IC = 0.5A*2 230 600
Forward current transfer ratio
hFE2 VCE = 2V, IC = 2A*2 150
Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 0.28 1.0 V
Transition frequency fT VCB = 6V, IE = 50mA, f = 200MHz 150 MHz
Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 26 50 pF
*2 Pulse measurement

*1h Rank classification

FE1

Rank Q R
hFE1 230 ~ 380 340 ~ 600

1
Transistor 2SD2321

PC Ta IC VCE IC VBE
500 2.4 6
Ta=25C VCE=2V
Collector power dissipation PC (mW)

IB=7mA
2.0 5
400

Collector current IC (A)

Collector current IC (A)

6mA
Ta=75C 25C
1.6 4
5mA
300
4mA 25C
1.2 3

200 3mA

0.8 2
2mA

100
0.4 1
1mA

0 0 0
0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) IC VBE(sat) IC hFE IC

10 100 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=30 IC/IB=30
Base to emitter saturation voltage VBE(sat) (V)

VCE=2V

Forward current transfer ratio hFE

3 30
500
Ta=75C
1 10

400
0.3 3 25C
Ta=75C 25C
25C Ta=25C
0.1 1 300
25C 75C 25C
0.03 0.3
200

0.01 0.1

100
0.003 0.03

0.001 0.01 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A) Collector current IC (A) Collector current IC (A)

fT IE Cob VCB Area of safe operation (ASO)

400 100 100
VCB=6V Single pulse
IE=0
Collector output capacitance Cob (pF)

Ta=25C Ta=25C
f=1MHz
350 30
Ta=25C
Transition frequency fT (MHz)

80
Collector current IC (A)

300 10 ICP

IC
250 3 t=10ms
60
t=1s
200 1

40
150 0.3

100 0.1
20
50 0.03

0 0 0.01
0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Emitter current IE (A) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V)